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41. 发明授权

US6137661A System for providing a magnetoresistive head having higher efficiency 失效
标题翻译：用于提供具有更高效率的磁阻头的系统
公开(公告)号：US6137661A
公开(公告)日：2000-10-24
申请号：US174469
申请日：1998-10-19
申请人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
发明人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B5/3932 , G11B5/3935 , G11B2005/3996 , Y10T29/49052
摘要： A system and method for providing a head for reading data is disclosed. The method and system include providing a magnetoresistive element and providing a flux guide having a high resistivity. The magnetoresistive element has an end. The flux guide also has an end. The end of the flux guide is adjacent to the end of the magnetoresistive element.
摘要翻译：公开了一种用于提供用于读取数据的磁头的系统和方法。该方法和系统包括提供磁阻元件并提供具有高电阻率的磁通引导件。磁阻元件有一端。助焊剂也有一个目的。磁通引导件的端部与磁阻元件的端部相邻。

42. 发明申请

US20120169331A1 GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity 有权
标题翻译：用于具有增强灵敏度的生物传感器的GMR传感器条带
公开(公告)号：US20120169331A1
公开(公告)日：2012-07-05
申请号：US13417398
申请日：2012-03-12
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01R33/02 , H05K3/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响磁层的磁致伸缩产生补偿横向磁各向异性。通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

43. 发明申请

US20090186770A1 Devices using addressable magnetic tunnel junction array to detect magnetic particles 有权
标题翻译：使用可寻址磁隧道结阵列检测磁性颗粒的装置
公开(公告)号：US20090186770A1
公开(公告)日：2009-07-23
申请号：US12009366
申请日：2008-01-18
申请人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
发明人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
IPC分类号： C40B20/08 , C40B60/10
CPC分类号： G01R33/098 , G01R33/1269 , Y10S436/806
摘要： A magnetic sensor for identifying small superparamagnetic particles bonded to a substrate contains a regular orthogonal array of MTJ cells formed beneath that substrate. A magnetic field imposed on the particle, perpendicular to the substrate, induces a magnetic field that has a component within the MTJ cells that is along the plane of the MTJ free layer. If that free layer has a low switching threshold, the induced field of the particle will create resistance changes in a group of MTJ cells that lie beneath it. These resistance changes will be distributed in a characteristic formation or signature that will indicate the presence of the particle. If the particle's field is insufficient to produce the free layer switching, then a biasing field can be added in the direction of the hard axis and the combination of this field and the induced field allows the presence of the particle to be determined.
摘要翻译：用于识别结合到衬底的小超顺磁性颗粒的磁传感器包含在该衬底下面形成的MTJ电池的规则正交阵列。垂直于衬底施加在颗粒上的磁场诱导磁场，该磁场在MTJ单元内具有沿着MTJ自由层的平面的分量。如果自由层具有低切换阈值，则颗粒的感应场将在其下面的一组MTJ细胞中产生电阻变化。这些电阻变化将分布在表征粒子存在的特征形成或特征中。如果粒子的场不足以产生自由层切换，则可以在硬轴的方向上添加偏置场，并且该场与感应场的组合允许确定粒子的存在。

44. 发明申请

US20080094884A1 Reference cell scheme for MRAM 有权
标题翻译： MRAM参考单元方案
公开(公告)号：US20080094884A1
公开(公告)日：2008-04-24
申请号：US12002161
申请日：2007-12-14
申请人： Hsu Yang , Po-Kang Wang , Xizeng Shi
发明人： Hsu Yang , Po-Kang Wang , Xizeng Shi
IPC分类号： G11C11/00
CPC分类号： G11C7/14 , G11C11/16
摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.
摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。位线与子阵列的每一列相关联。耦合将位列对的位线连接到读出放大器的近端位置。一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。讨论了一种用于验证MRAM参考子阵列的编程的方法。

45. 发明申请

US20080032423A1 GMR biosensor with enhanced sensitivity 有权
标题翻译： GMR生物传感器具有增强的灵敏度
公开(公告)号：US20080032423A1
公开(公告)日：2008-02-07
申请号：US11497162
申请日：2006-08-01
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N33/536
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译：包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响磁性层产生补偿横向磁各向异性。通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

46. 发明申请

US20070115717A1 Reference cell scheme for MRAM 有权
标题翻译： MRAM参考单元方案
公开(公告)号：US20070115717A1
公开(公告)日：2007-05-24
申请号：US11284299
申请日：2005-11-21
申请人： Hsu Yang , Po-Kang Wang , Xizeng Shi
发明人： Hsu Yang , Po-Kang Wang , Xizeng Shi
IPC分类号： G11C11/14
CPC分类号： G11C7/14 , G11C11/16
摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.
摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。位线与子阵列的每一列相关联。耦合将位列对的位线连接到读出放大器的近端位置。一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。讨论了一种用于验证MRAM参考子阵列的编程的方法。

47. 发明申请

US20060013038A1 Adaptive algorithm for MRAM manufacturing 有权
公开(公告)号：US20060013038A1
公开(公告)日：2006-01-19
申请号：US10889911
申请日：2004-07-13
申请人： Hsu Kaiyang , Xizeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kaiyang , Xizeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C11/14
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

48. 发明授权

US06906894B2 Write head having a recessed, magnetic adjunct pole formed atop a main pole, and method of making the same 有权
标题翻译：具有形成在主极上方的凹入的磁性辅助极的写头及其制造方法
公开(公告)号：US06906894B2
公开(公告)日：2005-06-14
申请号：US10903977
申请日：2004-07-29
申请人： Yingjian Chen , Xiaozhong Dang , Francis H. Liu , Kroum Stoev , Hai Jiang , Yugang Wang , Xizeng Shi
发明人： Yingjian Chen , Xiaozhong Dang , Francis H. Liu , Kroum Stoev , Hai Jiang , Yugang Wang , Xizeng Shi
IPC分类号： G11B5/127 , G11B5/31 , G11B5/147
CPC分类号： G11B5/1278 , G11B5/3109 , Y10T29/49034 , Y10T29/49044
摘要： A read/write head and method of making the same are used in a data storage system, such as a disk drive, for perpendicular magnetic recording of data. The head employs a two-layer pole design with a main pole made of sputtered high moment magnetic material, and an adjunct pole made of electroplated soft magnetic film. The main pole is used to write data onto the medium, and is formed over the write coil. The adjunct pole is substantially recessed from the air bearing surface and is formed over the main pole. The present head design significantly enhances the magnetic write field, and substantially reduces side-writing that result in accidental erasure of data in adjacent tracks on the magnetic recording medium.
摘要翻译：读/写头及其制造方法用于数据存储系统，例如磁盘驱动器，用于数据的垂直磁记录。头部采用双层极设计，其主极由溅射高磁矩材料制成，电极由电镀软磁膜制成。主极用于将数据写入介质，并形成在写入线圈上。辅助杆从空气轴承表面基本上凹入并且形成在主极上。本头设计显着增强了磁写入场，并且基本上减少了导致磁记录介质上的相邻轨道中的数据的意外擦除的侧写。

49. 发明授权

US06888184B1 Shielded magnetic ram cells 有权
标题翻译：屏蔽磁性柱塞电池
公开(公告)号：US06888184B1
公开(公告)日：2005-05-03
申请号：US10074394
申请日：2002-02-11
申请人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
发明人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
IPC分类号： G11C11/16 , H01L21/336 , H01L27/22
CPC分类号： G11C11/16 , H01L27/222
摘要： A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.
摘要翻译：公开了一种在半导体衬底上制造的磁存储器。该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。多个磁隧道结中的每一个包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。多个屏蔽件与多个磁性隧道结电隔离。多个磁隧道结在多个屏蔽之间。

50. 发明授权

US06834010B1 Temperature dependent write current source for magnetic tunnel junction MRAM 有权
公开(公告)号：US06834010B1
公开(公告)日：2004-12-21
申请号：US10741841
申请日：2003-12-18
申请人： Qiuqun Qi , Xizeng Shi
发明人： Qiuqun Qi , Xizeng Shi
IPC分类号： G11C700
CPC分类号： G11C7/04 , G11C11/16
摘要： An MRAM storage device includes temperature dependent current sources that adjust their outputs as temperature varies. Temperature dependent current sources include one or more diodes connected to a transistor. As temperature varies so does the voltage drop across the diodes. In addition, the MRAM data storage device includes at least one digit line, at least one bit line, and at least one MRAM cell disposed proximate to a junction of a digit line and a bit line. Each end of each digit line is connected to temperature dependent current sources and current sinks. One end of each bit line is connected to a temperature dependent current source while the other end of each bit line is connected to a current sink. Two logic signals R and D are used to activate a write operation and determine the direction of the write current in the digit line.

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