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41. 发明申请

US20130306871A1 METHODS, APPARATUS AND MEDIA FOR DETERMINING A SHAPE OF AN IRRADIANCE PULSE TO WHICH A WORKPIECE IS TO BE EXPOSED 有权
标题翻译：用于确定辐照脉冲的形状的方法，装置和媒体，以便工件被暴露
公开(公告)号：US20130306871A1
公开(公告)日：2013-11-21
申请号：US13824269
申请日：2011-10-14
申请人： Joseph Cibere , David Malcolm Camm
发明人： Joseph Cibere , David Malcolm Camm
IPC分类号： G01J5/02
CPC分类号： G01J5/02 , H01L21/67115 , H01L21/67248 , H01L22/12 , H01L22/20
摘要： A method and system for determining a shape of an irradiance pulse to which a semiconductor wafer is to be exposed during a thermal cycle are disclosed. The method includes receiving, with a processor circuit, thermal cycle parameters specifying requirements of the thermal cycle, and determining, with the processor circuit, a shape of a heating portion of the irradiance pulse. Determining includes optimizing at least one parameter of a flux profile model of the heating portion of the irradiance pulse to satisfy the requirements while minimizing frequency-domain energy spectral densities of the flux profile model at resonant frequencies of the wafer, to minimize vibration of the wafer at the resonant frequencies when the wafer is exposed to the irradiance pulse.
摘要翻译：公开了一种在热循环期间确定半导体晶片将被暴露的辐照脉冲的形状的方法和系统。该方法包括使用处理器电路接收指定热循环的要求的热循环参数，以及利用处理器电路确定辐照脉冲的加热部分的形状。确定包括优化辐照脉冲的加热部分的通量分布模型的至少一个参数以满足要求，同时使晶片的谐振频率处的通量分布模型的频域能量密度最小化，以最小化晶片的振动当晶片暴露于辐照度脉冲时的谐振频率。

42. 发明申请

US20130196510A1 SLOTTED ELECTROSTATIC SHIELD MODIFICATION FOR IMPROVED ETCH AND CVD PROCESS UNIFORMITY 审中-公开
标题翻译：用于改进蚀刻和CVD工艺均匀的静态静电屏蔽修改
公开(公告)号：US20130196510A1
公开(公告)日：2013-08-01
申请号：US13791532
申请日：2013-03-08
申请人： Mattson Technology, Inc.
发明人： Rene George , Andreas Kadavanich , Daniel J. Devine , Stephen E. Savas
IPC分类号： H01L21/67 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32431 , H01L21/02104 , H01L21/3065 , H01L21/6715 , H05H1/46
摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
摘要翻译：实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

43. 发明授权

US08434341B2 Methods and systems for supporting a workpiece and for heat-treating the workpiece 有权
标题翻译：用于支撑工件和热处理工件的方法和系统
公开(公告)号：US08434341B2
公开(公告)日：2013-05-07
申请号：US13359857
申请日：2012-01-27
申请人： David Malcolm Camm , Guillaume Sempere , Ljubomir Kaludjercic , Gregory Stuart , Mladen Bumbulovic , Tim Tran , Sergiy Dets , Tony Komasa , Marc Rudolph , Joseph Cibere
发明人： David Malcolm Camm , Guillaume Sempere , Ljubomir Kaludjercic , Gregory Stuart , Mladen Bumbulovic , Tim Tran , Sergiy Dets , Tony Komasa , Marc Rudolph , Joseph Cibere
IPC分类号： B21D37/16 , B23H11/00
CPC分类号： H01L21/68728 , H01L21/68721 , H01L21/68757
摘要： An apparatus for supporting a semiconductor workpiece includes a heating system configured to cause thermally-induced motion of the semiconductor workpiece by heating a surface of the workpiece relative to a bulk of the workpiece. The thermally-induced motion includes vertical motion of an outer edge region of the workpiece and a center of the workpiece relative to each other. The apparatus further includes a support system configured to allow the thermally-induced motion including the vertical motion of the outer edge region of the workpiece and the center of the workpiece relative to each other while supporting the workpiece.
摘要翻译：用于支撑半导体工件的装置包括加热系统，该加热系统构造成通过相对于工件的大部分加热工件的表面来引起半导体工件的热感应运动。热诱导运动包括工件的外边缘区域和工件相对于彼此的中心的垂直运动。该装置还包括支撑系统，该支撑系统构造成允许包括工件的外边缘区域的垂直运动和工件中心相对于彼此同时支撑工件的热感应运动。

44. 发明授权

US08413604B2 Slotted electrostatic shield modification for improved etch and CVD process uniformity 有权
标题翻译：开槽静电屏蔽改进，以改善蚀刻和CVD工艺均匀性
公开(公告)号：US08413604B2
公开(公告)日：2013-04-09
申请号：US11564134
申请日：2006-11-28
申请人： Rene George , Andreas Kadavanich , Daniel J. Devine , Stephen E. Savas , John Zajac , Hongching Shan
发明人： Rene George , Andreas Kadavanich , Daniel J. Devine , Stephen E. Savas , John Zajac , Hongching Shan
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32431 , H01L21/02104 , H01L21/3065 , H01L21/6715 , H05H1/46
摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
摘要翻译：实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

45. 发明授权

US08335658B2 Method and apparatus for determining measurement values 有权
标题翻译：用于确定测量值的方法和装置
公开(公告)号：US08335658B2
公开(公告)日：2012-12-18
申请号：US12376231
申请日：2007-08-03
申请人： Christoph Merkl
发明人： Christoph Merkl
IPC分类号： G01K17/00
CPC分类号： H01L21/67115 , G01J5/0003 , G01J5/06 , G05D23/1917 , G05D23/27 , H01L21/67248
摘要： The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the measurement values is compared with the development over time of the prediction values and the measurement value is corrected if the difference exceeds predetermined threshold value.
摘要翻译：本发明描述了一种用于确定快速加热系统（1）中的诸如半导体晶片的物体（2）的温度，辐射，发射率，透射率和/或反射率的值的方法，其中来自辐射的输出信号将来自物体的温度辐射记录的检测器（50）用作测量值，并且在模型系统（100）中计算测量值的预测值。将测量值随时间的发展与预测值的随时间变化进行比较，并且如果差超过预定阈值则校正测量值。

46. 发明授权

US08138105B2 Rapid thermal processing using energy transfer layers 有权
标题翻译：使用能量转移层的快速热处理
公开(公告)号：US08138105B2
公开(公告)日：2012-03-20
申请号：US12631821
申请日：2009-12-05
申请人： Paul J. Timans
发明人： Paul J. Timans
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
摘要翻译：执行用于对处理室中的半导体晶片进行热处理的方法，作为用于处理晶片的整体多步骤技术的中间部分，包括将能量转移层施加到晶片的至少一部分，并将晶片以处理室中的能量源的方式使晶片处于热分布，使得能量传递层影响热分布的至少一部分。热分布至少具有第一个升温事件。该方法还包括在时间上与热分布的关系，去除处理室中的能量转移层至少足以使晶片经历后续步骤。描述了晶片的相关中间状态。

47. 发明授权

US08109549B2 Endeffectors for handling semiconductor wafers 有权
标题翻译：用于处理半导体晶圆的处理器
公开(公告)号：US08109549B2
公开(公告)日：2012-02-07
申请号：US12640135
申请日：2009-12-17
申请人： Paul Mantz
发明人： Paul Mantz
IPC分类号： B65G49/07 , B66C1/02
CPC分类号： H01L21/68707 , Y10S414/141
摘要： Various endeffector designs are disclosed for handling semiconductor wafers. For instance, an endeffector for handling wafers at a relatively low temperature is disclosed along with an endeffector for handling wafers at a relatively high temperature. Both endeffectors include uniquely designed support members that are configured to only contact a wafer at the wafer's edge. The endeffectors may also include a wafer detection system. The endeffector for handling wafers at relatively low temperatures may also include a pushing device that is used not only to position a wafer but to hold a wafer on the endeffector during acceleration or deceleration of the endeffector caused by a robot arm attached to the endeffector. As designed, the endeffectors may have a very slim profile making the endeffectors easily maneuverable.
摘要翻译：公开了用于处理半导体晶片的各种设计。例如，在相对较低的温度下处理用于处理晶片的用于处理相对低温度的晶片的封口器被公开。两个消除器都包括独特设计的支撑构件，其构造成仅在晶片的边缘处接触晶片。消除器还可以包括晶片检测系统。用于在较低温度下处理晶片的落料器还可以包括推动装置，该推动装置不仅用于定位晶片，而且用于在由附接到止血器的机械手臂引起的止血器的加速或减速期间将晶片保持在封闭器上。根据设计，减压罩可以具有非常纤薄的轮廓，使得能够容易地操纵能量。

48. 发明申请

US20100252547A1 SYSTEM AND METHOD FOR REDUCING OBJECT DEFORMATION DURING A PULSED HEATING PROCESS 审中-公开
标题翻译：在脉冲加热过程中减少对象变形的系统和方法
公开(公告)号：US20100252547A1
公开(公告)日：2010-10-07
申请号：US12819784
申请日：2010-06-21
申请人： Paul Janis Timans
发明人： Paul Janis Timans
IPC分类号： F27B5/14 , F27D11/00
CPC分类号： H01L21/67115 , F27B5/04 , F27B17/0025 , H01L21/67109
摘要： An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.
摘要翻译：公开了一种在脉冲加热过程中优化热预算的方法。散热器或热转印板被配置和定位在经受热处理的诸如半导体晶片的物体附近。散热器被配置为增强从物体的热传递速率，使得物体在能量脉冲之后迅速从峰值温度降低。高导热材料可以位于板和物体之间。板可以包括突起，肋，孔，凹槽和其它不连续性，以增强热传递并且避免在热循环期间对物体的物理损伤。此外，可以选择板的光学性质以允许通过来自板的能量测量进行温度测量，或者为能量脉冲提供不同的热响应。该板还可以允许对晶片进行预热或主动冷却。

49. 发明申请

US20100151694A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 有权
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：US20100151694A1
公开(公告)日：2010-06-17
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/316 , C23C16/00
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

50. 发明授权

US07737385B2 Selective reflectivity process chamber with customized wavelength response and method 有权
标题翻译：选择性反射处理室，具有定制的波长响应和方法
公开(公告)号：US07737385B2
公开(公告)日：2010-06-15
申请号：US11506174
申请日：2006-08-16
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译：描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。腔室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的治疗对象辐射能。通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

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