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1. 发明申请

US20060100735A1 Process for determining the temperature of a semiconductor wafer in a rapid heating unit 有权
标题翻译：用于确定快速加热单元中的半导体晶片的温度的方法
公开(公告)号：US20060100735A1
公开(公告)日：2006-05-11
申请号：US10540613
申请日：2003-11-28
申请人： Markus Hauf , Christoph Merkl , Christoph Striebel
发明人： Markus Hauf , Christoph Merkl , Christoph Striebel
IPC分类号： G06F19/00 , H01L21/00 , H01L21/66
CPC分类号： H01L21/324 , G01J5/0003 , H01L21/67115 , H01L21/67248
摘要： The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value adjusted by the changeable portion and the adjusted forecast value, state correction of a state of the model system by recirculation of the second difference in the model, with the aim of bringing the state of the model system into correspondence with that of the real system, and measurement of the at least one state variable on the model.
摘要翻译：本发明涉及一种用于通过在RTP系统上测量的至少一个测量信号从RTP系统的模型确定至少一个状态变量的过程 - 测量值，其与待确定的状态变量有关，以及通过模型 - 预测值预测的测量值，由此测量值和预测值分别包括常数和可变部分的分量，并且由此分别至少建立可变部分，由滤波器分隔开，以便在模型的可变部分和通过模型预测的测量值的可变部分之间形成第一差异，通过再循环模型中的第一差异来至少一个模型参数的参数自适应，目的是将模型行为适应于可变系统参数，与测量值和预测值形成第二个差异通过可变部分调整的测量值和经调整的预测值，通过模型中的第二差异的再循环对模型系统的状态进行状态校正，目的是使模型系统的状态与实际系统和模型上至少一个状态变量的测量。

2. 发明申请

US20060040478A1 Method of producing a calibration wafer 有权
标题翻译：校准晶圆的制造方法
公开(公告)号：US20060040478A1
公开(公告)日：2006-02-23
申请号：US10536788
申请日：2003-11-13
申请人： Christoph Merkl , Markus Hauf , Rolf Bremensdorfer
发明人： Christoph Merkl , Markus Hauf , Rolf Bremensdorfer
IPC分类号： H01L21/04
CPC分类号： G01N21/278 , H01L21/67115 , H01L22/34
摘要： A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.
摘要翻译：一种制造具有至少预定发射率的校准晶片的方法，包括提供半导体材料晶片; 使晶片的体材料掺杂异质原子和/或产生晶格缺陷以获得预定的发射率; 并涂覆晶片以获得另外的光学特性。

3. 发明授权

US07412299B2 Process for determining the temperature of a semiconductor wafer in a rapid heating unit 有权
标题翻译：用于确定快速加热单元中的半导体晶片的温度的方法
公开(公告)号：US07412299B2
公开(公告)日：2008-08-12
申请号：US10540613
申请日：2003-11-28
申请人： Markus Hauf , Christoph Merkl , Christoph Striebel
发明人： Markus Hauf , Christoph Merkl , Christoph Striebel
IPC分类号： G06F19/00 , G05B13/02
CPC分类号： H01L21/324 , G01J5/0003 , H01L21/67115 , H01L21/67248
摘要： The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value adjusted by the changeable portion and the adjusted forecast value, state correction of a state of the model system by recirculation of the second difference in the model, with the aim of bringing the state of the model system into correspondence with that of the real system, and measurement of the at least one state variable on the model.
摘要翻译：本发明涉及一种用于通过在RTP系统上测量的至少一个测量信号从RTP系统的模型确定至少一个状态变量的过程 - 测量值，其与待确定的状态变量有关，以及通过模型 - 预测值预测的测量值，由此测量值和预测值分别包括常数和可变部分的分量，并且由此分别至少建立可变部分，由滤波器分隔开，以便在模型的可变部分和通过模型预测的测量值的可变部分之间形成第一差异，通过再循环模型中的第一差异来至少一个模型参数的参数自适应，目的是将模型行为适应于可变系统参数，与测量值和预测值形成第二个差异通过可变部分调整的测量值和经调整的预测值，通过模型中的第二差异的再循环对模型系统的状态进行状态校正，目的是使模型系统的状态与实际系统和模型上至少一个状态变量的测量。

4. 发明授权

US08335658B2 Method and apparatus for determining measurement values 有权
标题翻译：用于确定测量值的方法和装置
公开(公告)号：US08335658B2
公开(公告)日：2012-12-18
申请号：US12376231
申请日：2007-08-03
申请人： Christoph Merkl
发明人： Christoph Merkl
IPC分类号： G01K17/00
CPC分类号： H01L21/67115 , G01J5/0003 , G01J5/06 , G05D23/1917 , G05D23/27 , H01L21/67248
摘要： The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the measurement values is compared with the development over time of the prediction values and the measurement value is corrected if the difference exceeds predetermined threshold value.
摘要翻译：本发明描述了一种用于确定快速加热系统（1）中的诸如半导体晶片的物体（2）的温度，辐射，发射率，透射率和/或反射率的值的方法，其中来自辐射的输出信号将来自物体的温度辐射记录的检测器（50）用作测量值，并且在模型系统（100）中计算测量值的预测值。将测量值随时间的发展与预测值的随时间变化进行比较，并且如果差超过预定阈值则校正测量值。

5. 发明授权

US08282272B2 Calibration substrate and method of calibration therefor 有权
标题翻译：校准基板及其校准方法
公开(公告)号：US08282272B2
公开(公告)日：2012-10-09
申请号：US12204959
申请日：2008-09-05
申请人： Roland Schanz , Christoph Merkl , Steffen Müller
发明人： Roland Schanz , Christoph Merkl , Steffen Müller
IPC分类号： G01K11/18 , G01K15/00 , F27D21/00
CPC分类号： G01K11/125 , G01J5/0003 , G01J5/0007 , G01J5/522 , G01K15/00 , H01L21/67248
摘要： A system and method is disclosed that reliably determines the transmissivity of a substrate. By determining the transmissivity of a calibration substrate, for instance, a temperature measuring device can be calibrated. The method and system are particularly well suited for use in thermal processing chambers that process semiconductor wafers used for forming integrated circuit chips.
摘要翻译：公开了可靠地确定基板的透射率的系统和方法。通过确定校准基板的透射率，例如，可以校准温度测量装置。该方法和系统特别适用于处理用于形成集成电路芯片的半导体晶片的热处理室。

6. 发明授权

US07169717B2 Method of producing a calibration wafer 有权
标题翻译：校准晶圆的制造方法
公开(公告)号：US07169717B2
公开(公告)日：2007-01-30
申请号：US10536788
申请日：2003-11-13
申请人： Christoph Merkl , Markus Hauf , Rolf Bremensdorfer
发明人： Christoph Merkl , Markus Hauf , Rolf Bremensdorfer
IPC分类号： H01L21/31 , H01L21/324
CPC分类号： G01N21/278 , H01L21/67115 , H01L22/34
摘要： A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.
摘要翻译：一种制造具有至少预定发射率的校准晶片的方法，包括提供半导体材料晶片; 使晶片的体材料掺杂异质原子和/或产生晶格缺陷以获得预定的发射率; 并涂覆晶片以获得另外的光学特性。

7. 发明申请

US20110125443A1 METHOD AND APPARATUS FOR DETERMINING MEASUREMENT VALUES 有权
标题翻译：用于确定测量值的方法和装置
公开(公告)号：US20110125443A1
公开(公告)日：2011-05-26
申请号：US12376231
申请日：2007-08-03
申请人： Christoph Merkl
发明人： Christoph Merkl
IPC分类号： G06F19/00 , G01K15/00 , G06F17/10
CPC分类号： H01L21/67115 , G01J5/0003 , G01J5/06 , G05D23/1917 , G05D23/27 , H01L21/67248
摘要： The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the measurement values is compared with the development over time of the prediction values and the measurement value is corrected if the difference exceeds predetermined threshold value.
摘要翻译：本发明描述了一种用于确定快速加热系统（1）中的诸如半导体晶片的物体（2）的温度，辐射，发射率，透射率和/或反射率的值的方法，其中来自辐射的输出信号将来自物体的温度辐射记录的检测器（50）用作测量值，并且在模型系统（100）中计算测量值的预测值。将测量值随时间的发展与预测值的随时间变化进行比较，并且如果差超过预定阈值则校正测量值。

8. 发明申请

US20090122827A1 Calibration Substrate and Method of Calibration Therefor 有权
标题翻译：校准基板及其校准方法
公开(公告)号：US20090122827A1
公开(公告)日：2009-05-14
申请号：US12204959
申请日：2008-09-05
申请人： Roland Schanz , Christoph Merkl , Steffen Muller
发明人： Roland Schanz , Christoph Merkl , Steffen Muller
IPC分类号： G01K11/18 , G01K15/00 , F27D21/00
CPC分类号： G01K11/125 , G01J5/0003 , G01J5/0007 , G01J5/522 , G01K15/00 , H01L21/67248
摘要： A system and method is disclosed that reliably determines the transmissivity of a substrate. By determining the transmissivity of a calibration substrate, for instance, a temperature measuring device can be calibrated. The method and system are particularly well suited for use in thermal processing chambers that process semiconductor wafers used for forming integrated circuit chips.
摘要翻译：公开了可靠地确定基板的透射率的系统和方法。通过确定校准基板的透射率，例如，可以校准温度测量装置。该方法和系统特别适用于处理用于形成集成电路芯片的半导体晶片的热处理室。

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