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    • 32. 发明授权
    • Optical information recording medium
    • 光信息记录介质
    • US5966367A
    • 1999-10-12
    • US88059
    • 1998-06-01
    • Akihiko TakasuKazuho Kato
    • Akihiko TakasuKazuho Kato
    • G11B7/0037G11B7/24G11B7/253G11B7/26
    • G11B7/26G11B7/24G11B7/0037G11B7/253
    • An optical information recording medium which can be played back by both a playback system for an SD (Super-density Disk) and a playback system for an HDMCD (High Density Multimedia Compact Disk), or by both the playback system for the SD and a playback system for a CD (Compact Disk). The optical information recording medium comprises a first transparent substrate which includes a smooth surface, and a first information surface bearing pits correspondent to first recorded information, the first information surface being covered with a semitransparent film which transmits part of a playback beam and reflects part thereof; and a second transparent substrate which includes a smooth surface, and a second information surface bearing pits correspondent to second recorded information, the second information surface being covered with a reflective film which reflects the greater part of the playback beam; the second transparent substrate being stacked on the first transparent substrate with the first information surface of the latter overlaid by the smooth surface of the former.
    • 可以由用于SD(超级密度盘)的重放系统和用于HDMCD(高密度多媒体光盘)的重放系统)或由SD的再现系统和用于SD的重放系统 用于CD(光盘)的播放系统。 光信息记录介质包括:第一透明基板,其包括平滑表面;以及第一信息表面承载凹坑,其对应于第一记录信息,第一信息表面被半透明膜覆盖,半透明膜透射部分回放光束并反射其部分 ; 以及第二透明基板,其包括光滑表面,并且第二信息表面承载凹坑对应于第二记录信息,所述第二信息表面被反射膜覆盖,所述反射膜反映所述重放光束的较大部分; 第二透明基板被堆叠在第一透明基板上,其中第一透明基板的第一信息表面由前者的光滑表面覆盖。
    • 37. 发明授权
    • Optical information storage systems and methods using heterostructures
comprising ternary group III-V nitride semiconductor materials
    • 使用包含三元III-V族氮化物半导体材料的异质结构的光学信息存储系统和方法
    • US5875052A
    • 1999-02-23
    • US924567
    • 1997-09-05
    • Irina K. ShmaginJohn F. MuthRobert M. Kolbas
    • Irina K. ShmaginJohn F. MuthRobert M. Kolbas
    • G11B7/0045G11B7/005G11B7/125G11B7/14G11B7/24G11B7/243G11B7/253G11B7/257G11C13/04
    • G11B7/243G11B7/00455G11B7/0052G11B7/127G11B7/253G11B7/257G11B2007/24306G11B2007/2431G11B2007/24314G11B2007/24322G11B7/14G11B7/24
    • Spatially localized radiation, preferably ultraviolet visible radiation, representing information is impinged onto a spatially localized area of a heterostructure comprising a ternary Group III-V Nitride semiconductor material. It has been found that the spatially localized optical radiation reversibly changes the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area, to thereby provide an optical memory. The stored information can be read from the memory by impinging blanket radiation, preferably ultraviolet radiation of the same frequency which was used to write the information, onto the heterostructure comprising ternary Group III-V Nitride semiconductor material including onto the spatially localized area thereof. Simultaneously, the changes in the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area as a result of the impinged blanket radiation are detected, to thereby read the information. Thus, high density, high contrast patterns can be written in spatially localized areas of a heterostructure comprising ternary Group III-V Nitride semiconductor material with ultraviolet light at room temperature and at cryogenic temperatures.
    • 表示信息的空间定位辐射,优选紫外可见辐射,撞击到包含三元III-V族氮化物半导体材料的异质结构的空间局部区域上。 已经发现,空间局部化的光辐射可逆地改变在空间局部区域中包含三元III-V族氮化物半导体材料的异质结构的性质,从而提供光学存储器。 存储的信息可以通过将用于写入信息的相同频率的毯式辐射(优选地是紫外线辐射)包含在包括在其空间局部区域上的三元III-V族氮化物半导体材料的异质结构上而从存储器读取。 同时,检测在空间局部区域中包含三次III-V族氮化物半导体材料的异质结构性质的变化,作为冲击的覆盖层辐射的结果,从而读取信息。 因此,高密度,高对比度图案可以写入包含三元III-V族氮化物半导体材料的异质结构的空间局部区域,在室温和低温下具有紫外光。