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1. 发明授权

US5843553A High performance media for optical recording 失效
标题翻译：用于光学记录的高性能介质
公开(公告)号：US5843553A
公开(公告)日：1998-12-01
申请号：US902544
申请日：1997-07-29
申请人： George R. Olin , Yuan-Sheng Tyan , Pranab K. Raychaudhuri , Fridrich Vazan
发明人： George R. Olin , Yuan-Sheng Tyan , Pranab K. Raychaudhuri , Fridrich Vazan
IPC分类号： G11B7/243 , G11B7/253 , G11B7/258 , B32B3/00
CPC分类号： G11B7/258 , G11B7/243 , G11B7/253 , G11B2007/24312 , G11B2007/24316 , G11B2007/2432 , G11B2007/24328 , G11B7/2533 , G11B7/2534 , G11B7/2585 , G11B7/259 , G11B7/2595 , Y10S428/913 , Y10S430/146 , Y10T428/21 , Y10T428/31507 , Y10T428/31678
摘要： A recordable element including a substrate and having over its surface, in order, an optical recording layer and a light reflecting layer, the improvement includes an optical recording layer containing Te.sub.a Ge.sub.b C.sub.c H.sub.d O.sub.e where a, b, c, d, and e are atomic percents such that a+b+c+d+e=100, and wherein 10
摘要翻译：一种可记录元件，包括基底并具有其表面，依次为光学记录层和光反射层，其改进包括含有TeaGebCcHdOe的光学记录层，其中a，b，c，d和e是原子百分比，使得 a + b + c + d + e = 100，其中10 / = 0; 具有一个或多个可具有不同组成的子层的光学记录层; 光记录层的厚度t为0.7Tmin

2. 发明授权

US5733623A Recording media for recordable element 失效
标题翻译：记录媒体可记录元素
公开(公告)号：US5733623A
公开(公告)日：1998-03-31
申请号：US732825
申请日：1996-10-15
申请人： Pranab K. Raychaudhuri , Fridrich Vazan , George R. Olin , Yuan-Sheng Tyan
发明人： Pranab K. Raychaudhuri , Fridrich Vazan , George R. Olin , Yuan-Sheng Tyan
IPC分类号： B41M5/26 , G11B7/24 , G11B7/243 , G11B7/26 , B32D3/00
CPC分类号： G11B7/24 , G11B7/243 , G11B2007/24308 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/2432 , G11B2007/24328 , G11B7/2534 , G11B7/2542 , G11B7/2595 , Y10S428/913 , Y10S430/146 , Y10T428/21 , Y10T428/31678
摘要： A recordable element with improved performance, and a method of making such element is disclosed. The recordable element includes a substrate and an optical recording layer deposited on the substrate, wherein the optical recording layer is formed of Te.sub.a Ge.sub.b C.sub.c H.sub.d O.sub.e where a, b, c, d, and e are atomic percents such that a+b+c+d+e=100, and wherein 10
摘要翻译：公开了具有改进性能的可记录元件以及制造这种元件的方法。可记录元件包括沉积在衬底上的衬底和光学记录层，其中光学记录层由TeaGebCcHdOe形成，其中a，b，c，d和e是原子百分比，使得+ b + c + d + e = 100，并且其中10 / = 0; 光学记录层上的金属层; 并且通过热处理在其所选择的时间和温度下具有其特性改变的记录元件，以显着提高抖动，窗口边缘，反射率和记录灵敏度性能。

3. 发明授权

US4904577A Optical recording element and alloy for use therein 失效
标题翻译：用于其中的光记录元件和合金
公开(公告)号：US4904577A
公开(公告)日：1990-02-27
申请号：US273790
申请日：1988-11-21
申请人： Yuan-Sheng Tyan , Pranab K. Raychaudhuri , Fridrich Vazan
发明人： Yuan-Sheng Tyan , Pranab K. Raychaudhuri , Fridrich Vazan
IPC分类号： B41M5/26 , C22C12/00 , C23C14/14 , C23C14/34 , G11B7/243
CPC分类号： C22C12/00 , G11B7/243 , G11B2007/24304 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： There is disclosed an antimony, tin and indium alloy which contains an additional element. The additional element is selected from the group consisting of titanium, aluminum, magnesium, manganese, silver, bismuth, germanium, lead, tellurium, gold, zinc, copper, palladium, nickel, iron, cobalt, and cadmium. The additional element substantially reduces arcing during the sputtering process used to make optical recording layers from the alloy.
摘要翻译：公开了含有附加元素的锑，锡和铟合金。附加元素选自钛，铝，镁，锰，银，铋，锗，铅，碲，金，锌，铜，钯，镍，铁，钴和镉。附加元件在用于从合金制造光学记录层的溅射工艺期间大大减少了电弧。

4. 发明授权

US06544617B1 Phase-change recording element for write once applications 有权
标题翻译：用于一次写入应用的相变记录元件
公开(公告)号：US06544617B1
公开(公告)日：2003-04-08
申请号：US09925751
申请日：2001-08-09
申请人： Yuan-Sheng Tyan , Thomas R. Cushman , Giuseppe Farruggia , George R. Olin , Bruno Primerano , Fridrich Vazan
发明人： Yuan-Sheng Tyan , Thomas R. Cushman , Giuseppe Farruggia , George R. Olin , Bruno Primerano , Fridrich Vazan
IPC分类号： B32B302
CPC分类号： G11B7/243 , G11B7/2542 , G11B7/258 , G11B7/2585 , G11B2007/24304 , G11B2007/2431 , G11B2007/24314 , G11B2007/2432 , G11B2007/24324 , Y10T428/21
摘要： A WORM optical recording element comprising a substrate and a phase-change recording layer wherein the phase-change recording layer has a composition expressed by SbaInbSncZndSieOfSh wherein a>0, b>0, c>0, d>0, e>0, f>0, h>0, and a+b+c+d+e+f+h=100
摘要翻译：一种WORM光学记录元件，包括基底和相变记录层，其中相变记录层具有由SbaInbSncZndSieOfSh表示的组成，其中a> 0，b> 0，c> 0，d> 0，e> 0，f > 0，h> 0，a + b + c + d + e + f + h = 100

5. 发明授权

US06224960B1 Phase-change recording medium for write once applications 失效
标题翻译：用于一次写入应用的相变记录介质
公开(公告)号：US06224960B1
公开(公告)日：2001-05-01
申请号：US09313951
申请日：1999-05-18
申请人： Yuan-Sheng Tyan , George R. Olin , Guiseppe Farruggia , Bruno Primerano , Fridrich Vazan , Thomas R. Cushman
发明人： Yuan-Sheng Tyan , George R. Olin , Guiseppe Farruggia , Bruno Primerano , Fridrich Vazan , Thomas R. Cushman
IPC分类号： B32B300
CPC分类号： G11B7/24 , G11B7/243 , G11B7/2534 , G11B7/2542 , G11B7/257 , G11B7/258 , G11B7/2585 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y10S428/913 , Y10S430/146
摘要： A recording medium includes a transparent substrate; a crystalline phase-change layer provided over the transparent substrate; a dielectric layer provided over the phase-change layer; a metallic reflector layer provided over the dielectric layer; and the crystalline phase-change layer having a thickness and phase-change material selected so that data can be recorded in it on a first write, but on second or subsequent writes the written data results in at least a 50% increase in data jitter.
摘要翻译：记录介质包括透明基板; 设置在所述透明基板上的结晶相变层; 设置在相变层上的电介质层; 设置在介电层上的金属反射层; 并且晶体相变层具有选择的厚度和相变材料，使得可以在第一次写入时将数据记录在其中，但是在第二次或后续写入时，写入的数据导致数据抖动的至少50％的增加。

6. 发明授权

US06605330B2 Phase-change recording element for write once applications 有权
标题翻译：用于一次写入应用的相变记录元件
公开(公告)号：US06605330B2
公开(公告)日：2003-08-12
申请号：US10010784
申请日：2001-11-13
申请人： Yuan-Sheng Tyan , Thomas R. Cushman , Giuseppe Farruggia , George R. Olin , Bruno Primerano , Fridrich Vazan
发明人： Yuan-Sheng Tyan , Thomas R. Cushman , Giuseppe Farruggia , George R. Olin , Bruno Primerano , Fridrich Vazan
IPC分类号： B32B302
CPC分类号： G11B7/243 , G11B7/0906 , G11B7/258 , G11B7/2585 , G11B2007/24304 , G11B2007/24312 , G11B2007/24324 , Y10T428/21
摘要： A WORM optical recording element comprising a substrate and a phase-change recording layer wherein the phase-change recording layer has a composition expressed by SbaXbSncZndSieOfSh wherein X is an element selected from In, Ge, Al, Zn, Mn, Cd, Ga, Ti, Si, Te, Nb, Fe, Co, W, Mo, S, Ni, O, Se, Tl, As, P, Au, Pd, Pt, Hf,or V and a>0, b>0, c>0, d>0, e>0, f>0, h>0, and a +b+c+d+e+f+h=100.
摘要翻译：一种WORM光学记录元件，包括基底和相变记录层，其中相变记录层具有由SbaXbSncZndSieOfSh表示的组成，其中X是选自In，Ge，Al，Zn，Mn，Cd，Ga，Ti ，Si，Te，Nb，Fe，Co，W，Mo，S，Ni，O，Se，Tl，As，P，Au，Pd，Pt，Hf或V和a> 0，b> 0，c> 0，d> 0，e> 0，f> 0，h> 0，a + b + c + d + e + f + h = 100。

7. 发明授权

US06497988B2 Phase-change recording element for write once applications 有权
标题翻译：用于一次写入应用的相变记录元件
公开(公告)号：US06497988B2
公开(公告)日：2002-12-24
申请号：US09791322
申请日：2001-02-22
申请人： Yuan-Sheng Tyan , Thomas R. Cushman , Giuseppe Farruggia , George R. Olin , Bruno Primerano , Fridrich Vazan , James A. Barnard
发明人： Yuan-Sheng Tyan , Thomas R. Cushman , Giuseppe Farruggia , George R. Olin , Bruno Primerano , Fridrich Vazan , James A. Barnard
IPC分类号： G11B70045
CPC分类号： G11B7/243 , G11B7/00454 , G11B7/006 , G11B7/24 , G11B7/2534 , G11B7/2585 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y10S430/146
摘要： A WORM optical recording element includes a substrate; an amorphous phase-change recording layer disposed over the substrate; a dielectric layer disposed adjacent to the amorphous phase-change layer; a reflector layer disposed adjacent to the dielectric layer; and wherein the material and the thickness of the layers are selected such that recording can be performed on the optical recording element by using a focused laser beam to form crystalline marks in the phase-change layer using laser pulses with less than 40 nS in duration, the reflectivity of the amorphous phase as measured by a collimated beam is higher than 28% and the contrast of the read-back signal is higher than 0.6, and the second and subsequent writing over previous recording results in at least a 50% increase in read out jitter.
摘要翻译： WORM光记录元件包括基板; 设置在所述基板上的非晶相变记录层; 设置在所述非晶相变层附近的介电层; 设置在所述电介质层附近的反射层; 并且其中选择这些层的材料和厚度，使得可以通过使用聚焦激光束在光学记录元件上进行记录，以在持续时间内使用小于40ns的激光脉冲在相变层中形成结晶标记，通过准直光束测量的非晶相的反射率高于28％，并且回读信号的对比度高于0.6，并且第二次和之后的写入超过先前的记录导致读取的至少50％的增加输出抖动。

8. 发明授权

US5972458A Optical recording element with an interfacial layer between the recording layer and the reflecting layer 失效
标题翻译：在记录层和反射层之间具有界面层的光学记录元件
公开(公告)号：US5972458A
公开(公告)日：1999-10-26
申请号：US53476
申请日：1998-04-01
申请人： Pranab K. Raychaudhuri , Fridrich Vazan
发明人： Pranab K. Raychaudhuri , Fridrich Vazan
IPC分类号： B41M5/26 , C23C14/06 , C23C14/08 , G11B7/241 , G11B7/243 , G11B7/257 , G11B7/258 , G11B7/26 , B32B3/00
CPC分类号： G11B7/258 , G11B7/243 , G11B7/257 , G11B7/26 , G11B2007/24312 , G11B2007/24316 , G11B2007/2432 , G11B2007/24328 , G11B2007/2571 , G11B2007/25711 , G11B2007/25715 , Y10S428/913 , Y10S430/146 , Y10T428/21
摘要： A recordable element includes a substrate, an optical recording layer deposited on the substrate, a light reflecting layer deposited over the recording layer and an interfacial layer having a thickness in a range of 3 to 30 nm and interposed between the recording layer and the reflective layer, the optical recording layer containing Te.sub.a Ge.sub.b C.sub.c H.sub.d O.sub.e where a, b, c, d, and e are the atomic percents such that a+b+c+d+e=100, and wherein 10
摘要翻译：可记录元件包括衬底，沉积在衬底上的光学记录层，沉积在记录层上的光反射层和厚度在3至30nm范围内并介于记录层和反射层之间的界面层含有TeaGebCcHdOe的光学记录层，其中a，b，c，d和e是原子百分比，使得a + b + c + d + e = 100，并且其中10 / = 0; 并且包含GewCxHyOz的界面层，其中w，x，y和z是原子百分比，使得w + x + y + z = 100，并且其中15 / = 0。记录元件的特性由选择的时间和温度通过热处理而改变，从而改善和稳定其性能。

9. 发明授权

US5770293A Method of forming recordable optical element using low absorption materials 失效
标题翻译：使用低吸收材料形成可记录光学元件的方法
公开(公告)号：US5770293A
公开(公告)日：1998-06-23
申请号：US631754
申请日：1996-04-12
申请人： Pranab K. Raychaudhuri , Fridrich Vazan
发明人： Pranab K. Raychaudhuri , Fridrich Vazan
IPC分类号： C23C14/06 , C23C14/34 , C23C14/35 , G11B7/24 , G11B7/243 , G11B7/258 , G11B7/26 , B32B3/00 , C23C16/00
CPC分类号： C23C14/34 , C23C14/06 , G11B7/24 , G11B7/243 , G11B7/258 , G11B7/26 , G11B2007/24314 , G11B2007/24316 , G11B7/2534 , G11B7/2585 , G11B7/259 , G11B7/2595 , Y10S428/913 , Y10S430/146 , Y10T428/21
摘要： A method of forming a recordable element including a substrate and having on its surface, in order, an optical recording layer and a light reflecting layer, the optical recording layer having at least two sublayers of different compositions is disclosed. The method includes forming in a sputtering chamber on the substrate surface a first sublayer of a predetermined thickness by sputtering at least two metal elements having Ge and Te, or alloys thereof, in a flowing environment of a hydrocarbon gas and an inert gas wherein the flow rate of the hydrocarbon gas is selected relative to the flow rate of the inert gas to provide the first sublayer with an elemental R.sub.min reflectivity is in the range of 40-60% and forming in the sputtering chamber on the first sublayer a second sublayer of a predetermined thickness by sputtering at least two elements having Ge and Te, or alloys thereof, in a flowing environment of hydrocarbon gas and the inert gas, with the flow rates of the hydrocarbon gas and the inert gas being substantially the same as when the first sublayer was formed and reducing the sputtering rate of the metal elements in comparison to that used when forming the first sublayer so that the elemental R.sub.min reflectivity of the second sublayer is in the range of about 70-85%. The method further includes forming a reflecting layer on the second sublayer and selecting the thicknesses of the first and second sublayers, and the reflecting layer such that the reflectivity of the recording element is about or greater than 70% for a laser wavelength of about 780 nm.
摘要翻译：一种形成包括基板的可记录元件的方法，其顺序具有光记录层和光反射层，其光表面具有至少两个不同组成的亚层。该方法包括在烃气体和惰性气体的流动环境中通过溅射至少两种具有Ge和Te的金属元素或其合金，在衬底表面上的溅射室中形成预定厚度的第一子层，其中流动选择相对于惰性气体的流量来提供烃气体的速率以提供具有元素的第一子层Rmin反射率在40-60％的范围内，并且在溅射室中在第一子层上形成第二子层在碳氢化合物气体和惰性气体的流动环境中溅射至少两种具有Ge和Te的元素或其合金的预定厚度，烃类气体和惰性气体的流速基本上与第一子层并且与形成第一子层时相比，金属元素的溅射速率降低，使得第二子层的元素Rmin反射率 ayer在约70-85％的范围内。该方法还包括在第二子层上形成反射层并选择第一和第二子层的厚度以及反射层，使得对于约780nm的激光波长，记录元件的反射率为大于或者大于70％。

10. 发明授权

US5725741A Method of forming recordable optical element using low absorption materials 失效
标题翻译：使用低吸收材料形成可记录光学元件的方法
公开(公告)号：US5725741A
公开(公告)日：1998-03-10
申请号：US631352
申请日：1996-04-12
申请人： Pranab K. Raychaudhuri , Fridrich Vazan
发明人： Pranab K. Raychaudhuri , Fridrich Vazan
IPC分类号： C23C14/06 , G11B7/24 , G11B7/243 , G11B7/258 , G11B7/26 , C23C14/34
CPC分类号： G11B7/258 , C23C14/06 , G11B7/24 , G11B7/243 , G11B7/26 , G11B2007/24312 , G11B2007/24316 , G11B7/2534 , G11B7/2585 , G11B7/259 , G11B7/2595
摘要： A method of forming a recordable element including a substrate and having on its surface, in order, an optical recording layer and a light reflecting layer, the optical recording layer having at least two sublayers of different compositions is disclosed. The method includes forming in a sputtering chamber on the substrate surface a first sublayer of a predetermined thickness by sputtering at least two elements having Ge and Te, or alloys thereof, in a flowing environment of a hydrocarbon gas and an inert gas wherein the flow rate of the hydrocarbon gas is selected relative to the flow rate of the inert gas to provide the first sublayer with an elemental R.sub.min reflectivity in the range of 40-60% and forming in the sputtering chamber on the first sublayer a second sublayer of a predetermined thickness by sputtering at least two elements having Ge and Te, or alloys thereof, in a flowing environment of hydrocarbon gas and the inert gas, with the flow rate of the hydrocarbon gas being selected to be greater than when forming the first sublayer so that the elemental R.sub.min reflectivity of the second layer is in the range of about 70-85%. The method further includes forming a reflecting layer on the second sublayer and selecting the thicknesses of the first and second sublayers, and the reflecting layer such that the reflectivity of the recording element is about or greater than 70% for a laser wavelength of about 780 nm.
摘要翻译：一种形成包括基板的可记录元件的方法，其顺序具有光记录层和光反射层，其光表面具有至少两个不同组成的亚层。该方法包括在烃气体和惰性气体的流动环境中通过溅射至少两种具有Ge和Te的元素或其合金，在衬底表面上的溅射室中形成预定厚度的第一子层，其中流速选择相对于惰性气体的流量的烃气体，以使第一子层的元素Rmin反射率在40-60％的范围内，并且在溅射室中在第一子层上形成预定厚度的第二子层通过在烃气和惰性气体的流动环境中溅射至少两种具有Ge和Te的元素或其合金，其中烃气体的流量被选择为大于形成第一子层时的元素，第二层的Rmin反射率在约70-85％的范围内。该方法还包括在第二子层上形成反射层并选择第一和第二子层的厚度以及反射层，使得对于约780nm的激光波长，记录元件的反射率为大于或者大于70％。

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