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31. 发明授权

US11352712B1 Method for controlling fiber growth in a laser heated pedestal growth system by controlling a laser power output, a pedestal feedstock rate of motion, and a draw rate 有权
公开(公告)号：US11352712B1
公开(公告)日：2022-06-07
申请号：US16368425
申请日：2019-03-28
申请人： Energy, United States Department of
发明人： Michael P. Buric , Bo Liu
IPC分类号： C30B15/22 , C30B13/30 , C30B13/22 , H01S3/16
摘要： One or more embodiments relate to a method for controlling fiber growth and fiber diameter in a laser heated pedestal growth (LHPG) system so as to provide long, continuous single-crystal optical fibers of uniform diameter. The method generally provides three independent parameter feedback controls to control the molten zone height, laser power, and fiber drawing rates simultaneously in order to reduce the mismatch between instantaneous diameter changes and current diameter. The method permits the growth of fibers with non-uniform diameters along the fiber's length. The method also provides the capability to stop the LHPG system, remove the exhausted pedestal feedstock with a second pedestal feedstock, and restart the LHPG system to provide a continuous fiber.

32. 发明授权

US10988856B2 Method for pulling a single crystal by the FZ method comprising reducing the power of a melting apparatus based on geometrical dimensions of the drop 有权
公开(公告)号：US10988856B2
公开(公告)日：2021-04-27
申请号：US16473401
申请日：2018-02-13
申请人： SILTRONIC AG
发明人： Thomas Schroeck
IPC分类号： C30B13/20 , C30B13/30 , C30B29/06
摘要： A single crystal is pulled by an FZ method, in which a polycrystal is melted by means of an electromagnetic melting apparatus and then recrystallized, wherein a first phase (P1) a lower end of the polycrystal, which is moved toward the melting apparatus, is melted by the melting apparatus to form a drop, and in a second phase (P2) a monocrystalline seed is attached to the lower end of the polycrystal and is melted beginning from an upper end of the seed, where a power (P) of the melting apparatus during the first phase (P1) and during the second phase (P2) is predetermined at least temporarily in dependence on a temperature and/or geometrical dimensions of crystal material used which comprises the drop and/or the seed and/or the polycrystal.

33. 发明申请

US20200180297A1 CONTROL OF SOLIDIFICATION IN LASER POWDER BED FUSION ADDITIVE MANUFACTURING USING A DIODE LASER FIBER ARRAY 审中-公开
公开(公告)号：US20200180297A1
公开(公告)日：2020-06-11
申请号：US16704831
申请日：2019-12-05
申请人： General Electric Company
发明人： William Thomas CARTER , Marshall Gordon JONES , Lang YUAN , Ning ZHOU , Steven Jude DUCLOS
IPC分类号： B33Y80/00 , G02B6/42 , B29C64/153 , B29C64/20 , C30B13/32 , C30B11/00 , C30B13/24 , C30B13/30 , C30B29/52 , C30B13/06 , B22F5/04 , F01D5/00 , B28B1/00 , B22F5/00 , B23K26/34 , B23K26/073 , B29C73/00 , B23K26/06 , B33Y30/00 , B29C73/34 , B22F3/105 , B33Y10/00 , B23P6/00 , B23K26/00
摘要： A method of method of forming or repairing a superalloy article having a columnar or equiaxed or directionally solidified or amorphous or single crystal microstructure includes emitting a plurality of laser beams from selected fibers of a diode laser fiber array corresponding to a pattern of a layer of the article onto a powder bed of the superalloy to form a melt pool; and controlling a temperature gradient and a solidification velocity of the melt pool to form the columnar or single crystal microstructure.

34. 发明授权

US10161058B2 Ga2O3-based single crystal substrate, and production method therefor 有权
公开(公告)号：US10161058B2
公开(公告)日：2018-12-25
申请号：US14772885
申请日：2014-02-26
申请人： TAMURA CORPORATION
发明人： Kohei Sasaki
IPC分类号： C30B29/16 , C30B31/00 , C30B13/10 , C30B13/30 , C30B13/32 , C30B13/24
摘要： Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).

35. 发明授权

US09828693B2 Apparatus and process for producing a crystal of semiconductor material 有权
公开(公告)号：US09828693B2
公开(公告)日：2017-11-28
申请号：US14711942
申请日：2015-05-14
申请人： SILTRONIC AG
发明人： Georg Brenninger , Georg Raming
IPC分类号： C30B13/08 , C30B13/20 , C30B11/00 , C30B13/14 , C30B13/30 , C30B29/06 , C30B11/10 , C30B15/12 , C30B15/02
CPC分类号： C30B13/20 , C30B11/001 , C30B11/003 , C30B11/10 , C30B13/08 , C30B13/14 , C30B13/30 , C30B15/02 , C30B15/12 , C30B29/06 , Y10T117/108
摘要： A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.

36. 发明授权

US09444216B2 Method of manufacturing a Ti:sapphire crystal fiber by laser-heated pedestal growth 有权
标题翻译：通过激光加热底座生长制造Ti：蓝宝石水晶纤维的方法
公开(公告)号：US09444216B2
公开(公告)日：2016-09-13
申请号：US14073077
申请日：2013-11-06
申请人： NATIONAL TAIWAN UNIVERSITY
发明人： Kuang-Yu Hsu , Dong-Yo Jheng , Yi-Han Liao , Sheng-Lung Huang
IPC分类号： C30B13/24 , H01S3/16 , C30B29/20 , G02B6/02 , H01S3/067 , C30B13/16 , C30B13/00 , C30B13/10 , C30B13/30 , H01S3/06 , H01S3/094 , C30B15/16
CPC分类号： H01S3/1636 , C30B13/005 , C30B13/10 , C30B13/16 , C30B13/24 , C30B13/30 , C30B15/16 , C30B29/20 , G02B6/02 , H01S3/061 , H01S3/06716 , H01S3/094038 , H01S3/1625
摘要： The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.
摘要翻译：本发明涉及一种晶体纤维，更具体地说，涉及一种Ti：蓝宝石水晶纤维及其制造方法，以及具有该结晶纤维的宽带光源。通过激光加热底座生长（LHPG）法将Ti：蓝宝石单晶生长成预定直径的晶体纤维。将生长的晶体纤维退火以增强其荧光并降低红外残余吸收。将退火晶体纤维插入玻璃毛细管并生长成单包层晶体纤维。宽带光源包括：用于提供泵浦光的泵浦源; 用于吸收泵浦光并发出宽带光的单层Ti：蓝宝石水晶光纤。

37. 发明授权

US09422634B2 Method and apparatus for producing a single crystal 有权
标题翻译：用于生产单晶的方法和装置
公开(公告)号：US09422634B2
公开(公告)日：2016-08-23
申请号：US13705207
申请日：2012-12-05
申请人： Siltronic AG
发明人： Georg Raming , Ludwig Altmannshofer , Gundars Ratnieks , Johann Landrichinger , Josef Lobmeyer , Alfred Holzinger
IPC分类号： C30B13/20 , C30B13/30 , C30B29/06
CPC分类号： C30B13/20 , C30B13/30 , C30B29/06 , Y10T117/1088
摘要： Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.
摘要翻译：通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在通过第一区域中的加热装置，结晶边界的外边缘的区域，其中结晶边界外边缘处的外三重点Ta与结晶边界的中心Z之间的距离Δ受到影响。用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。

38. 发明授权

US06858076B1 Method and apparatus for manufacturing single-crystal ingot 有权
标题翻译：制造单晶锭的方法和装置
公开(公告)号：US06858076B1
公开(公告)日：2005-02-22
申请号：US09569086
申请日：2000-05-10
申请人： Hirotaka Nakajima , Toshirou Kotooka , Yoshiyuki Shimanuki , Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa
发明人： Hirotaka Nakajima , Toshirou Kotooka , Yoshiyuki Shimanuki , Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa
IPC分类号： C30B15/14 , C30B29/06 , C30B13/30
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1032 , Y10T117/1068
摘要： There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without involvement of excessive heating of a crucible, as well as to a method for controlling the system. In a system for manufacturing a single-crystal ingot having a cooler for cooling a single-crystal ingot which is being pulled from molten raw material (called a single-crystal pulled ingot), when a tail of the single-crystal pulled ingot is formed, the cooler is moved away from the solid/melt interface between the single-crystal ingot and the molten raw material, to thereby reduce the power dissipated by the system. In the system, the cooler is moved upward after the end of a product area of the single-crystal ingot has been cooled until it passes through a grown-in defect temperature range.
摘要翻译：提供了一种用于制造单晶锭的系统，其具有用于冷却被拉动的单晶锭的冷却器，并且能够形成尾部而不涉及坩埚的过度加热，以及用于控制系统。在用于制造用于冷却从熔融原料（称为单晶拉锭）中拉出的单晶锭的冷却器的单晶锭的系统中，当形成单晶拉晶锭的尾部时，将冷却器从单晶锭和熔融原料之间的固体/熔融界面移开，从而减少系统消耗的功率。在系统中，冷却器在单晶锭的产品区域结束已经被冷却直到其通过生长的缺陷温度范围之后向上移动。

39. 发明授权

US5762707A Floating zone melting apparatus 失效
标题翻译：浮动区熔化装置
公开(公告)号：US5762707A
公开(公告)日：1998-06-09
申请号：US715022
申请日：1996-09-17
申请人： Isamu Shindo
发明人： Isamu Shindo
IPC分类号： C30B13/24 , C30B13/30 , C30B35/00
CPC分类号： C30B13/24 , C30B13/30 , Y10T117/10 , Y10T117/1016
摘要： The present invention provides an apparatus for permitting easy formation of a stable molten region and easy growing of even large-diameter single crystals, with a good-quality of single crystals, of which a floating zone melting apparatus of the infrared-ray concentrated heating type has halogen lamps at one side focal point of four oppositely arranged ellipsoidal reflecting mirrors along orthogonal axes with the inside surfaces thereof as the reflectors, and condensing infrared-rays reflected from the reflectors onto the other side focal point, thereby accomplishing heating, wherein the eccentricity is within a range of from 0.4 to 0.65.
摘要翻译：本发明提供一种容易形成稳定的熔融区域并容易生长均匀的大直径单晶的装置，其具有优质的单晶，其中红外线集中加热型的浮区熔化装置在四个相对布置的椭圆反射镜的一侧焦点处具有卤素灯，其正交轴线以其内表面为反射器，并将从反射器反射的红外线聚焦到另一侧焦点上，从而实现加热，其中偏心在0.4至0.65的范围内。

40. 发明授权

US5092956A Device for mechanically stabilizing web ribbon buttons during growth initiation 失效
标题翻译：用于在生长启动期间机械稳定纸带按钮的装置
公开(公告)号：US5092956A
公开(公告)日：1992-03-03
申请号：US311376
申请日：1989-02-10
申请人： Paul K. Henry , Edward P. Fortier
发明人： Paul K. Henry , Edward P. Fortier
IPC分类号： C30B13/30 , C30B15/00 , C30B15/22 , C30B15/34 , C30B29/64
CPC分类号： C30B15/34 , C30B13/30 , C30B15/00 , C30B15/22 , C30B29/60 , Y10T117/1032 , Y10T117/1072
摘要： The invention relates to a stabilization device for stabilizing dendritic web seed buttons during initiation of crystal growth from a float zone melt. The invention includes angular maintenance means for maintaining a constant angular orientation between the axis of a growth initiation seed and the upper surface of a web button during withdrawal of the web button from the melt. In the preferred embodiment, the angular maintenance means includes an adjustable elevation tube which surrounds the seed, the weight of which may be selectively supported by the seed button during web button withdrawal.
摘要翻译：本发明涉及一种稳定装置，用于在从浮区熔体开始晶体生长期间稳定树枝状网状种子按钮。本发明包括角度维持装置，用于在将网状物按钮从熔体中取出期间，保持在生长起始种子的轴线和网状物按钮的上表面之间恒定的角度取向。在优选实施例中，角度维持装置包括一个包围种子的可调节升降管，其重量可以在网状物按钮取出期间由种子按钮选择性地支撑。

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