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31. 发明申请

US20080233736A1 PROCESS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：制造半导体集成电路器件的工艺
公开(公告)号：US20080233736A1
公开(公告)日：2008-09-25
申请号：US12127564
申请日：2008-05-27
申请人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号： H01L21/4763
CPC分类号： H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译：为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

32. 发明申请

US20080194116A1 Treatment Solution and Method of Applying a Passivating Layer 有权
标题翻译：处理方法及应用钝化层的方法
公开(公告)号：US20080194116A1
公开(公告)日：2008-08-14
申请号：US11914878
申请日：2005-05-25
申请人： Janos Farkas , Sebastien Petitdidier
发明人： Janos Farkas , Sebastien Petitdidier
IPC分类号： H01L21/47
CPC分类号： H01L21/3212 , C11D11/0047 , H01L21/02052 , H01L21/67034 , Y10S438/906
摘要： A treatment solution for a semiconductor wafer comprising water, a passivating reagent and a surfactant. The treatment solution is either mixed with a cleaning fluid, a rinsing fluid or a drying vapour, and is used in a cleaning apparatus employing a Marangoni dryer.
摘要翻译：一种用于包含水，钝化剂和表面活性剂的半导体晶片的处理溶液。处理溶液与清洁液，漂洗液或干燥蒸气混合，并用于采用Marangoni干燥器的清洁装置中。

33. 发明申请

US20080173326A1 OXYGEN PLASMA CLEAN TO REMOVE CARBON SPECIES DEPOSITED ON A GLASS DOME SURFACE 失效
标题翻译：氧气等离子体清洁去除在玻璃表面上沉积的碳物质
公开(公告)号：US20080173326A1
公开(公告)日：2008-07-24
申请号：US11626121
申请日：2007-01-23
申请人： QUANCHENG GU , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
发明人： QUANCHENG GU , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
IPC分类号： B08B7/04
CPC分类号： C23C14/564 , Y10S438/905 , Y10S438/906
摘要： A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.
摘要翻译：提供了一种用于在预清洁过程中使用的介电圆顶表面的原位清洁方法。通过提供与含碳膜反应形成含挥发性碳的化合物的一种或多种氧化气体的等离子体来除去含碳沉积物。

34. 发明申请

US20080146036A1 Semiconductor manufacturing process 有权
标题翻译：半导体制造工艺
公开(公告)号：US20080146036A1
公开(公告)日：2008-06-19
申请号：US11611890
申请日：2006-12-18
申请人： Yu-Tsung Lai , Chun-Jen Huang , Jyh-Cherng Yau , Jiunn-Hsiung Liao
发明人： Yu-Tsung Lai , Chun-Jen Huang , Jyh-Cherng Yau , Jiunn-Hsiung Liao
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31116 , H01L21/76811 , H01L21/76814 , Y10S438/906 , Y10S438/963
摘要： Disclosed is a semiconductor manufacturing process, in which a fluorine radical-containing plasma is used to etch a hard mask and a layer therebeneath; and a treatment is carried out using a gas reactive to fluorine radicals for reacting with residual fluorine radicals to form a fluorine-containing compound and remove it. Thus, precipitates formed by the reaction of fluorine radicals and titanium components existing in the hard mask to cause a process defect can be avoided.
摘要翻译：公开了一种半导体制造方法，其中使用含氟自由基的等离子体来蚀刻硬掩模和其下面的层; 并且使用与氟自由基反应的气体与残留的氟自由基反应来进行处理以形成含氟化合物并将其除去。因此，可以避免通过存在于硬掩模中的氟自由基和钛成分的反应形成的沉淀物引起工艺缺陷。

35. 发明申请

US20080128389A1 METHOD TO REDUCE CHARGE BUILDUP DURING HIGH ASPECT RATIO CONTACT ETCH 有权
标题翻译：在高比例接触蚀刻期间减少充电建筑物的方法
公开(公告)号：US20080128389A1
公开(公告)日：2008-06-05
申请号：US12018254
申请日：2008-01-23
申请人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
发明人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
IPC分类号： B44C1/22
CPC分类号： H01L21/76802 , H01L21/31116 , Y10S438/906
摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.
摘要翻译：描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。氧化物层沉积在下面的衬底上。由碳源气体形成等离子体蚀刻气体。掺杂剂混入气体中。掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。蚀刻停止在下面的基底。

36. 发明申请

US20080121619A1 METHOD OF CLEANING WAFER AFTER ETCHING PROCESS 有权
标题翻译：蚀刻过程后清洗水的方法
公开(公告)号：US20080121619A1
公开(公告)日：2008-05-29
申请号：US11562989
申请日：2006-11-23
申请人： Miao-Chun Lin , Cheng-Ming Weng , Chun-Jen Huang
发明人： Miao-Chun Lin , Cheng-Ming Weng , Chun-Jen Huang
IPC分类号： C23F1/00 , B08B3/08 , B08B5/00
CPC分类号： H01L21/02063 , H01L21/76807 , H01L21/76814 , Y10S134/902 , Y10S438/906
摘要： A method of cleaning a wafer after an etching process is provided. A substrate having an etching stop layer, a dielectric layer, a patterned metal hard mask sequentially formed thereon is provided. Using the patterned metal hard mask, an opening is defined in the dielectric layer. The opening exposes a portion of the etching stop layer. A dry etching process is performed in the environment of helium to remove the etching stop layer exposed by the opening. A dry cleaning process is performed on the wafer surface using a mixture of nitrogen and hydrogen as the reactive gases. A wet cleaning process is performed on the wafer surface using a cleaning solution containing a trace amount of hydrofluoric acid.
摘要翻译：提供了在蚀刻处理之后清洁晶片的方法。提供了具有蚀刻停止层，电介质层，依次形成的图案化金属硬掩模的基板。使用图案化金属硬掩模，在介电层中限定开口。开口露出一部分蚀刻停止层。在氦气的环境中进行干蚀刻处理以除去由开口露出的蚀刻停止层。使用氮和氢的混合物作为反应气体在晶片表面上进行干洗处理。使用含有微量氢氟酸的清洗溶液在晶片表面上进行湿式清洗处理。

37. 发明授权

US07347951B2 Method of manufacturing electronic device 有权
标题翻译：制造电子装置的方法
公开(公告)号：US07347951B2
公开(公告)日：2008-03-25
申请号：US11206036
申请日：2005-08-18
申请人： Ikuo Uematsu , Naoya Hayamizu
发明人： Ikuo Uematsu , Naoya Hayamizu
IPC分类号： C23G1/06
CPC分类号： H01L21/02071 , G02F2001/136295 , H01L21/02063 , H01L29/4908 , H01L29/66757 , Y10S134/902 , Y10S438/906 , Y10S438/963
摘要： A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3.
摘要翻译：一种电子器件的制造方法包括在基板上的绝缘膜的表面上形成由铝或铝合金构成的布线材料层，通过用作掩模的抗蚀剂图案的反应离子蚀刻处理对布线材料层进行图案化以形成布线，用除去蚀刻残渣的水溶液处理包括布线的绝缘膜的表面，含有过硫酸氢盐，含氟化合物和酸的水溶液，用于调节pH值并具有 pH值为-1〜3。

38. 发明申请

US20070284649A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070284649A1
公开(公告)日：2007-12-13
申请号：US11685984
申请日：2007-03-14
申请人： Kazuaki IWASAWA
发明人： Kazuaki IWASAWA
IPC分类号： H01L29/788 , H01L21/31 , H01L23/58
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L27/115 , H01L27/11521 , Y10S438/906
摘要： A semiconductor device includes a deposited-type insulating film disposed on a substrate; a coating-type insulating film disposed on a surface of the deposited-type insulating film and having a film density which is lower than a film density of the deposited-type insulating film; and an intermediate insulating film disposed between the deposited-type insulating film and the coating-type insulating film and having a film density which is intermediate between the film density of the deposited-type insulating film and the film density of the coating-type insulating film.
摘要翻译：半导体器件包括设置在基板上的沉积型绝缘膜; 设置在所述沉积型绝缘膜的表面上并具有低于所述沉积型绝缘膜的膜密度的膜密度的涂层型绝缘膜; 以及设置在所述沉积型绝缘膜和所述涂覆型绝缘膜之间并且具有介于所述沉积型绝缘膜的膜密度和所述涂覆型绝缘膜的膜密度之间的膜密度的中间绝缘膜。

39. 发明授权

US07282098B2 Processing-subject cleaning method and apparatus, and device manufacturing method and device 有权
标题翻译：加工对象清洗方法和装置，以及装置的制造方法和装置
公开(公告)号：US07282098B2
公开(公告)日：2007-10-16
申请号：US10366664
申请日：2003-02-14
申请人： Yoshiaki Mori
发明人： Yoshiaki Mori
IPC分类号： B08B5/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B2203/0229 , C03C23/0075 , H01L21/67028 , Y10S438/906
摘要： A method for reducing energy consumption, and amounts of cleaning liquids and rinse liquids used. A cleaning head has a plurality of cleaning units and a drying unit. The organic, and inorganic, substance cleaning portions of each cleaning head, blows a first, and a second, cleaning agent selectively over a portion to be cleaned of a substrate, and sucks reaction products etc. through a first, and second, suction mouth, respectively. A rinse portion blows pure water over the portion of the substrate from which inorganic substances have been removed, and sucks its vapor through a third suction mouth. The drying unit dries the substrate by blowing out a heated gas from a hot wind blowing-out mouth. A light guide illuminates the portion to be cleaned, of the substrate, with ultraviolet light, and thereby decomposes residual organic substances.
摘要翻译：一种减少能量消耗的方法，以及使用的清洗液和冲洗液的量。清洁头具有多个清洁单元和干燥单元。每个清洁头的有机和无机物质清洁部分，在基板的待清洁部分上选择性地吹扫第一和第二清洁剂，并且通过第一和第二吸嘴吸入反应产物等，分别。漂洗部分将纯水吹到基材的已经除去无机物质的部分上，并通过第三吸嘴吸入蒸汽。干燥单元通过从热风吹出口吹出加热气体来干燥基板。光导通过紫外线照射基板的待清洁部分，从而分解剩余的有机物质。

40. 发明申请

US20070238321A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070238321A1
公开(公告)日：2007-10-11
申请号：US11733316
申请日：2007-04-10
申请人： Takuya Futase , Hideaki Tsugane , Mitsuo Kimoto , Hidenori Suzuki
发明人： Takuya Futase , Hideaki Tsugane , Mitsuo Kimoto , Hidenori Suzuki
IPC分类号： B08B6/00
CPC分类号： H01L21/67184 , H01L21/02057 , H01L21/02068 , H01L21/67167 , H01L21/67207 , H01L21/823835 , H01L21/823842 , H01L29/665 , H01L29/6659 , H01L29/7833 , Y10S438/906
摘要： Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150° C. by using a shower head kept at 180° C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400° C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.
摘要翻译：提供一种制造半导体器件的方法。在将半导体晶片放置在配备有成膜装置的干洗室的晶片台上之后，用还原气体在半导体晶片的表面上进行干洗处理。然后，通过使用保持在180℃的喷淋头，在100〜150℃的第一温度下对半导体晶片进行热处理。然后将半导体晶片真空转移到热处理室，其中半导体晶片为在150-400℃的第二温度下进行热处理。因此，去除了残留在半导体晶片的主表面上的产物。本发明通过减少硅化镍层的电性能的变化，可以制造具有提高的可靠性和生产率的半导体器件。

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