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1. 发明申请

US20070196966A1 METHOD OF MANUFACTURING INSULATING FILM, METHOD OF MANUFACTURING TRANSISTOR, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE 失效
标题翻译：制造绝缘膜的方法，制造晶体管的方法和制造电子器件的方法
公开(公告)号：US20070196966A1
公开(公告)日：2007-08-23
申请号：US11610729
申请日：2006-12-14
申请人： Kazuaki IWASAWA
发明人： Kazuaki IWASAWA
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/4908 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/0234 , H01L21/02359 , H01L21/3125 , H01L21/316
摘要： A method of manufacturing an insulating film includes coating a first liquid material in which polysilazane is dissolved on a substrate; decreasing dangling bonds of silicon (Si) in the first liquid material; after decreasing the dangling bonds, coating a second liquid material which is similar to the first liquid material on the first liquid material; and converting the first liquid material and the second liquid material into a silicon (Si) insulating film.
摘要翻译：制造绝缘膜的方法包括将聚硅氮烷溶解在基板上的第一液体材料涂布; 减少第一液体材料中硅（Si）的悬挂键; 在减少悬挂键之后，涂覆与第一液体材料上的第一液体材料类似的第二液体材料; 以及将所述第一液体材料和所述第二液体材料转化为硅（Si）绝缘膜。

2. 发明申请

US20110065271A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110065271A1
公开(公告)日：2011-03-17
申请号：US12878320
申请日：2010-09-09
申请人： Kazuaki IWASAWA , Shogo MATSUO , Kenichiro TORATANI
发明人： Kazuaki IWASAWA , Shogo MATSUO , Kenichiro TORATANI
IPC分类号： H01L21/336
CPC分类号： H01L21/823481 , H01L21/28273 , H01L21/76224 , H01L27/11521 , H01L29/512 , H01L29/7881
摘要： According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method includes the steps of: forming a tunnel insulating film on a semiconductor substrate; forming a floating gate electrode on the tunnel insulating film; and forming a silicon nitride film including a low-density silicon nitride film and a high-density silicon nitride film on the floating gate electrode. The method also includes the steps of: forming an isolation trench thereby to expose the low-density silicon nitride film exposed at least in a portion of a side surface of the isolation trench; forming an isolating insulating film covering an internal surface of the isolation trench; removing the silicon nitride film; and forming an interelectrode insulating film and a control gate electrode both covering the floating gate electrode and the isolating insulating film.
摘要翻译：根据一个实施例，公开了制造半导体器件的方法。该方法包括以下步骤：在半导体衬底上形成隧道绝缘膜; 在隧道绝缘膜上形成浮栅; 以及在所述浮栅电极上形成包括低密度氮化硅膜和高密度氮化硅膜的氮化硅膜。该方法还包括以下步骤：形成隔离沟槽，从而暴露至少在隔离沟槽的侧表面的一部分中暴露的低密度氮化硅膜; 形成覆盖所述隔离沟槽的内表面的隔离绝缘膜; 去除氮化硅膜; 以及形成电极间绝缘膜和覆盖浮栅电极和隔离绝缘膜的控制栅电极。

3. 发明申请

US20100190317A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON OXIDE FILM FORMING METHOD 有权
标题翻译：半导体器件制造方法和氧化硅膜形成方法
公开(公告)号：US20100190317A1
公开(公告)日：2010-07-29
申请号：US12691483
申请日：2010-01-21
申请人： Kazuaki IWASAWA , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
发明人： Kazuaki IWASAWA , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
IPC分类号： H01L21/762
CPC分类号： H01L21/76229
摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
摘要翻译：半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理温度以在元件隔离槽内形成被覆氧化硅膜。

4. 发明申请

US20070284649A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070284649A1
公开(公告)日：2007-12-13
申请号：US11685984
申请日：2007-03-14
申请人： Kazuaki IWASAWA
发明人： Kazuaki IWASAWA
IPC分类号： H01L29/788 , H01L21/31 , H01L23/58
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L27/115 , H01L27/11521 , Y10S438/906
摘要： A semiconductor device includes a deposited-type insulating film disposed on a substrate; a coating-type insulating film disposed on a surface of the deposited-type insulating film and having a film density which is lower than a film density of the deposited-type insulating film; and an intermediate insulating film disposed between the deposited-type insulating film and the coating-type insulating film and having a film density which is intermediate between the film density of the deposited-type insulating film and the film density of the coating-type insulating film.
摘要翻译：半导体器件包括设置在基板上的沉积型绝缘膜; 设置在所述沉积型绝缘膜的表面上并具有低于所述沉积型绝缘膜的膜密度的膜密度的涂层型绝缘膜; 以及设置在所述沉积型绝缘膜和所述涂覆型绝缘膜之间并且具有介于所述沉积型绝缘膜的膜密度和所述涂覆型绝缘膜的膜密度之间的膜密度的中间绝缘膜。

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