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1. 发明申请

US20100273330A1 RINSE FORMULATION FOR USE IN THE MANUFACTURE OF AN INTEGRATED CIRCUIT 审中-公开
标题翻译：在集成电路制造中使用的冲洗配方
公开(公告)号：US20100273330A1
公开(公告)日：2010-10-28
申请号：US12377810
申请日：2006-08-23
申请人： Janos Farkas , Maria-Luisa Calvo-Munez , Philippe Monnoyer , Sebastien Petitdidier
发明人： Janos Farkas , Maria-Luisa Calvo-Munez , Philippe Monnoyer , Sebastien Petitdidier
IPC分类号： H01L21/302 , C11D7/32 , H01L21/461
CPC分类号： H01L21/02071 , C11D1/008 , C11D3/0073 , C11D3/28 , C11D7/3281 , C11D11/0047 , H01L21/02074
摘要： The present invention relates to a solution for treating a surface of a substrate for use in a semiconductor device. More particularly, the present invention relates to a liquid rinse formulation for use in semiconductor processing, wherein the liquid formulation contains: i. a surface passivation agent; and ii. an oxygen scavenger, wherein the pH of the rinse formulation is 8.0 or greater.
摘要翻译：本发明涉及一种用于处理用于半导体器件的衬底表面的溶液。更具体地，本发明涉及用于半导体加工的液体漂洗制剂，其中液体制剂包含：i。表面钝化剂; 和ii。一种除氧剂，其中漂洗制剂的pH为8.0或更高。

2. 发明申请

US20080194116A1 Treatment Solution and Method of Applying a Passivating Layer 有权
标题翻译：处理方法及应用钝化层的方法
公开(公告)号：US20080194116A1
公开(公告)日：2008-08-14
申请号：US11914878
申请日：2005-05-25
申请人： Janos Farkas , Sebastien Petitdidier
发明人： Janos Farkas , Sebastien Petitdidier
IPC分类号： H01L21/47
CPC分类号： H01L21/3212 , C11D11/0047 , H01L21/02052 , H01L21/67034 , Y10S438/906
摘要： A treatment solution for a semiconductor wafer comprising water, a passivating reagent and a surfactant. The treatment solution is either mixed with a cleaning fluid, a rinsing fluid or a drying vapour, and is used in a cleaning apparatus employing a Marangoni dryer.
摘要翻译：一种用于包含水，钝化剂和表面活性剂的半导体晶片的处理溶液。处理溶液与清洁液，漂洗液或干燥蒸气混合，并用于采用Marangoni干燥器的清洁装置中。

3. 发明授权

US07674725B2 Treatment solution and method of applying a passivating layer 有权
标题翻译：处理溶液和施加钝化层的方法
公开(公告)号：US07674725B2
公开(公告)日：2010-03-09
申请号：US11914878
申请日：2005-05-25
申请人： Janos Farkas , Sebastien Petitdidier
发明人： Janos Farkas , Sebastien Petitdidier
IPC分类号： H01L21/31
CPC分类号： H01L21/3212 , C11D11/0047 , H01L21/02052 , H01L21/67034 , Y10S438/906
摘要： A treatment solution for a semiconductor wafer comprising water, a passivating reagent and a surfactant. The treatment solution is either mixed with a cleaning fluid, a rinsing fluid or a drying vapor, and is used in a cleaning apparatus employing a Marangoni dryer.
摘要翻译：一种用于包含水，钝化剂和表面活性剂的半导体晶片的处理溶液。处理溶液与清洁液，漂洗液或干燥蒸气混合，并用于采用Marangoni干燥器的清洁装置中。

4. 发明申请

US20080287041A1 System and Method for Removing Particles From a Polishing Pad 有权
标题翻译：用于从抛光垫去除颗粒的系统和方法
公开(公告)号：US20080287041A1
公开(公告)日：2008-11-20
申请号：US12093113
申请日：2005-11-08
申请人： Srdjan Kordic , Sebastien Petitdidier , Janos Farkas , Silvio Del Monaco
发明人： Srdjan Kordic , Sebastien Petitdidier , Janos Farkas , Silvio Del Monaco
IPC分类号： B24B7/00
CPC分类号： B23H5/08 , B24B53/001 , B24B53/017 , C25F1/00
摘要： A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.
摘要翻译：一种用于从抛光垫去除颗粒以提高抛光垫作为化学机械抛光工艺的一部分去除材料的效率的系统，该系统包括抛光垫; 流体分配器，布置成在抛光垫上分配流体; 和去除装置，其中所述去除装置包括用于增加分配在抛光垫上的流体的温度的加热器和/或用于将抛光垫耦合到电压源的电压装置，用于从抛光垫表面排斥带电粒子，同时流体分配器在抛光垫上分配流体。

5. 发明授权

US08752228B2 Apparatus for cleaning of circuit substrates 有权
标题翻译：电路基板清洗装置
公开(公告)号：US08752228B2
公开(公告)日：2014-06-17
申请号：US11912126
申请日：2005-04-20
申请人： Janos Farkas , Srdjan Kordic , Sebastien Petitdidier , Kevin E Cooper , Jan Van Hassel
发明人： Janos Farkas , Srdjan Kordic , Sebastien Petitdidier , Kevin E Cooper , Jan Van Hassel
IPC分类号： H01L21/00
CPC分类号： H01L21/67046
摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.
摘要翻译：使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷，或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。清洁材料网（116）插入在每个辊和基底之间。可以使用各种不同的清洁材料网，例如。组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。

6. 发明授权

US07883393B2 System and method for removing particles from a polishing pad 有权
标题翻译：用于从抛光垫去除颗粒的系统和方法
公开(公告)号：US07883393B2
公开(公告)日：2011-02-08
申请号：US12093113
申请日：2005-11-08
申请人： Srdjan Kordic , Sebastien Petitdidier , Janos Farkas , Silvio Del Monaco
发明人： Srdjan Kordic , Sebastien Petitdidier , Janos Farkas , Silvio Del Monaco
IPC分类号： B24B49/00
CPC分类号： B23H5/08 , B24B53/001 , B24B53/017 , C25F1/00
摘要： A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.
摘要翻译：一种用于从抛光垫去除颗粒以提高抛光垫作为化学机械抛光工艺的一部分去除材料的效率的系统，该系统包括抛光垫; 流体分配器，布置成在抛光垫上分配流体; 和去除装置，其中所述去除装置包括用于增加分配在抛光垫上的流体的温度的加热器和/或用于将抛光垫耦合到电压源的电压装置，用于从抛光垫表面排斥带电粒子，同时流体分配器在抛光垫上分配流体。

7. 发明申请

US20080271274A1 Apparatus for Cleaning of Circuit Substrates 有权
标题翻译：电路基板清洗装置
公开(公告)号：US20080271274A1
公开(公告)日：2008-11-06
申请号：US11912126
申请日：2005-04-20
申请人： Srdjan Kordic , Kevin E. Cooper , Sebastien Petitdidier , Janos Farkas , Jan Van-Hassel
发明人： Srdjan Kordic , Kevin E. Cooper , Sebastien Petitdidier , Janos Farkas , Jan Van-Hassel
IPC分类号： H01L21/00
CPC分类号： H01L21/67046
摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.
摘要翻译：使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷，或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。清洁材料网（116）插入在每个辊和基底之间。可以使用各种不同的清洁材料网，例如。组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。

8. 发明授权

US08545634B2 System and method for cleaning a conditioning device 有权
标题翻译：用于清洁调理装置的系统和方法
公开(公告)号：US08545634B2
公开(公告)日：2013-10-01
申请号：US12090186
申请日：2005-10-19
申请人： Jean-Marc Lafon , Silvio Delmonaco , Sebastien Petitdidier
发明人： Jean-Marc Lafon , Silvio Delmonaco , Sebastien Petitdidier
IPC分类号： B08B3/12
CPC分类号： B24B49/18 , B24B1/04 , B24B53/017
摘要： A system for cleaning a conditioning device to improve the efficiency of the conditioning of a polishing pad using the conditioning device as part of a chemical-mechanical polishing process, the system comprising a conditioning device; a fluid dispenser arranged to dispense a fluid on the conditioning device; and an acoustic nozzle arranged to emit a megasonic or ultrasonic signal at the conditioning device while the fluid dispenser is dispensing the fluid on the conditioning device.
摘要翻译：一种用于清洁调节装置以提高使用调节装置调节抛光垫的效率作为化学机械抛光工艺的一部分的系统，该系统包括调节装置; 流体分配器，布置成在调节装置上分配流体; 以及声喷嘴，其布置成在所述流体分配器在所述调节装置上分配流体时在所述调节装置处发出兆声波或超声波信号。

9. 发明申请

US20080311834A1 System and Method for Cleaning a Conditioning Device 有权
标题翻译：清洁调节装置的系统和方法
公开(公告)号：US20080311834A1
公开(公告)日：2008-12-18
申请号：US12090186
申请日：2005-10-19
申请人： Jean Marc Lafon , Silvio Delmonaco , Sebastien Petitdidier
发明人： Jean Marc Lafon , Silvio Delmonaco , Sebastien Petitdidier
IPC分类号： B24B21/18
CPC分类号： B24B49/18 , B24B1/04 , B24B53/017
摘要： A system for cleaning a conditioning device to improve the efficiency of the conditioning of a polishing pad using the conditioning device as part of a chemical-mechanical polishing process, the system comprising a conditioning device; a fluid dispenser arranged to dispense a fluid on the conditioning device; and an acoustic nozzle arranged to emit a megasonic or ultrasonic signal at the conditioning device while the fluid dispenser is dispensing the fluid on the conditioning device.
摘要翻译：一种用于清洁调节装置以提高使用调节装置调节抛光垫的效率作为化学机械抛光工艺的一部分的系统，该系统包括调节装置; 流体分配器，布置成在调节装置上分配流体; 以及声喷嘴，其布置成在所述流体分配器在所述调节装置上分配流体时在所述调节装置处发出兆声波或超声波信号。

10. 发明申请

US20070017902A1 Method for the chemical treatment of copper surfaces for the removal of carbonaceous residues 审中-公开
标题翻译：用于化学处理铜表面去除碳质残渣的方法
公开(公告)号：US20070017902A1
公开(公告)日：2007-01-25
申请号：US11187707
申请日：2005-07-22
申请人： Sebastien Petitdidier , Alain Inard
发明人： Sebastien Petitdidier , Alain Inard
IPC分类号： B44C1/22 , C03C25/68 , H01L21/461
CPC分类号： H01L21/02074 , C11D3/0073 , C11D7/265 , C11D7/3281 , C11D11/0047
摘要： A method for the treatment of copper surfaces on a semiconductor wafer for the removal of carbonaceous residues, these being obtained during a chemical-mechanical polishing operation, includes a water rinsing of the wafer followed by a chemical rinsing of the wafer using a solution containing a corrosion inhibitor and an organic acid.
摘要翻译：在化学机械抛光操作期间，用于处理半导体晶片上用于去除碳质残渣的铜表面的方法包括晶片的水漂洗，然后使用含有腐蚀抑制剂和有机酸。

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