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31. 发明授权

US09294007B2 Gate driving circuit and inverter having the same 有权
标题翻译：栅极驱动电路和逆变器具有相同的功能
公开(公告)号：US09294007B2
公开(公告)日：2016-03-22
申请号：US13768909
申请日：2013-02-15
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Bum Seok Suh
IPC分类号： H02M7/537 , H02M1/08 , H02M7/5387 , H03K17/0814 , H03K17/10 , H03K17/74 , H02M7/487 , H02M1/00
CPC分类号： H02M7/537 , H02M1/08 , H02M7/487 , H02M7/5387 , H02M2001/0006 , H03K17/08148 , H03K17/107 , H03K17/74
摘要： There is provided an inverter including: an inverter unit including at least one inverter arm having a plurality of switches, and switching the input power according to control to output an alternating current power; at least one driving unit including at least one high voltage gate driving unit having a plurality high voltage gate drivers connected to one another in series between an input terminal of an instruction signal instructing a switching control of an inverter unit and an output terminal of a control signal controlling switching of the inverter unit to control switching driving of a high side switch and including at least one low voltage gate driver to control switching driving of a low side switch; and at least one bootstrap unit charging/discharging and dividing a voltage generated at the time of switching the plurality of switches according to switching control of the driving unit.
摘要翻译：提供一种逆变器，包括：逆变器单元，包括具有多个开关的至少一个逆变臂，并根据控制切换输入功率以输出交流电力; 至少一个驱动单元，其包括至少一个高电压栅极驱动单元，所述至少一个高电压栅极驱动单元具有多个高电压栅极驱动器，所述多个高压栅极驱动器串联连接在指示逆变器单元的开关控制的指令信号的输入端与控制器的输出端子之间信号控制逆变器单元的切换以控制高侧开关的开关驱动，并且包括至少一个低压栅极驱动器以控制低侧开关的开关驱动; 以及至少一个自举单元根据所述驱动单元的切换控制来对所述多个开关进行切换时产生的电压进行充放电。

32. 发明申请

US20160005725A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160005725A1
公开(公告)日：2016-01-07
申请号：US14690637
申请日：2015-04-20
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro Ikeda
IPC分类号： H01L25/18 , H01L23/00
CPC分类号： H01L25/18 , H01L24/45 , H01L24/49 , H01L2224/45124 , H01L2224/45147 , H01L2224/4917 , H01L2924/12032 , H01L2924/12035 , H01L2924/1205 , H01L2924/13064 , H01L2924/13091 , H01L2924/19105 , H03K17/08128 , H03K17/163 , H03K17/6871 , H03K17/74 , H03K2017/6875 , H01L2924/00014
摘要： A semiconductor device according to an embodiment includes a normally off transistor having a first source, a first drain, a first gate connected to a common gate terminal, and a body diode, a normally on transistor having a second source connected to the first drain, a second drain, and a second gate, a capacitor provided between the common gate terminal and the second gate, a first diode having a first anode connected to between the capacitor and the second gate and a first cathode connected to the first source, and a second diode having a second anode connected to the first source and a second cathode connected to the second drain.
摘要翻译：根据实施例的半导体器件包括常闭晶体管，其具有第一源极，第一漏极，连接到公共栅极端子的第一栅极和体二极管，具有连接到第一漏极的第二源极的常开晶体管，第二漏极和第二栅极，设置在公共栅极端子和第二栅极之间的电容器，具有连接到电容器和第二栅极之间的第一阳极的第一二极管和连接到第一源极的第一阴极，以及第二二极管具有连接到第一源的第二阳极和连接到第二漏极的第二阴极。

33. 发明申请

US20150340965A1 SEMICONDUCTOR DEVICE AND POWER CONVERTER USING THE SAME 有权
标题翻译：半导体器件和功率转换器
公开(公告)号：US20150340965A1
公开(公告)日：2015-11-26
申请号：US14719413
申请日：2015-05-22
申请人： Hitachi, Ltd.
发明人： Takashi HIRAO , Mutsuhiro MORI
IPC分类号： H02M7/537 , H01L27/06
CPC分类号： H02M7/537 , H01L27/0629 , H01L27/0727 , H01L29/0619 , H01L29/0623 , H01L29/0834 , H01L29/7397 , H01L29/8611 , H02M7/003 , H03K17/16 , H03K17/74
摘要： A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.
摘要翻译：提供了可以防止电流集中到特定芯片中的半导体器件，并且可以减少损耗以及噪声。根据本发明的半导体器件包括：开关元件; 与开关元件并联连接的主二极管; 以及与开关元件并联连接并且与主二极管的结构不同的辅助二极管，其中在导通状态下，流过辅助二极管的电流小于通过主二极管的电流，并且在转换中从导通状态到非导通状态的时间段，流过辅助二极管的电流大于通过主二极管的电流。

34. 发明申请

US20150270255A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150270255A1
公开(公告)日：2015-09-24
申请号：US14625139
申请日：2015-02-18
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA , Hiroshi MOCHIKAWA , Atsuhiko KUZUMAKI
IPC分类号： H01L27/02 , H01L29/866 , H01L29/16 , H01L29/20 , H01L29/80 , H01L27/06 , H01L29/778
CPC分类号： H01L27/0255 , H01L27/0629 , H01L29/1608 , H01L29/2003 , H01L29/7786 , H01L29/80 , H01L29/866 , H03K17/0822 , H03K17/0828 , H03K17/102 , H03K17/74 , H03K2017/6875
摘要： A semiconductor device according to the embodiments includes: a first normally-off transistor including a first source terminal, a first drain terminal, and a first gate terminal; a normally-on transistor including a second source terminal connected to the first drain terminal, a second drain terminal, and a second gate terminal connected to the first source terminal; a protection element provided between the first gate terminal and the second drain terminal, and having breakdown voltage lower than breakdown voltage of the normally-on transistor; and a first diode including a first anode connected to the second drain terminal and a first cathode connected to the protection element.
摘要翻译：根据实施例的半导体器件包括：第一常闭晶体管，包括第一源极端子，第一漏极端子和第一栅极端子; 常闭晶体管，包括连接到第一漏极端子的第二源极端子，第二漏极端子和连接到第一源极端子的第二栅极端子; 保护元件，设置在第一栅极端子和第二漏极端子之间，并且具有低于常导通晶体管的击穿电压的击穿电压; 以及包括连接到第二漏极端子的第一阳极和连接到保护元件的第一阴极的第一二极管。

35. 发明申请

US20150236498A1 CIRCUIT INTERRUPTION DEVICE 有权
标题翻译：电路中断装置
公开(公告)号：US20150236498A1
公开(公告)日：2015-08-20
申请号：US14423050
申请日：2013-08-23
申请人： ALSTOM Technology Ltd
发明人： Colin Charnock Davidson , Jean-Pierre Dupraz
IPC分类号： H02H3/087 , H02H7/12
CPC分类号： H02H3/087 , H02H7/12 , H02H7/1213 , H02H7/1257 , H02H9/02 , H02H9/041 , H02J3/36 , H02M1/32 , H02M2001/0006 , H02M2001/348 , H03K17/08148 , H03K17/167 , H03K17/168 , H03K17/74 , H03K2217/0081 , Y02E60/60
摘要： An extinguishing branch (28) for an electrical circuit (32) includes: a snubber circuit (36) including an energy storage limb (40), wherein the energy storage limb (40) includes first and second energy storage limb portions separated by a first junction (46) to define a first voltage divider, and each energy storage limb portion includes at least one energy storage device (48,50); and an arrester limb (38) connected across the energy storage limb (40), wherein the arrester limb (38) includes first and second arrester limb portions separated by a second junction (52) to define a second voltage divider, and each arrester limb portion includes at least one arrester element (54,56), wherein the first and second junctions (46,52) are connected to define a voltage divider bridge, and the voltage divider bridge is electrically coupleable to the electrical circuit (32) so as to provide, in use, a driving voltage to drive the electrical circuit (32).
摘要翻译：用于电路（32）的灭火支路（28）包括：缓冲电路（36），其包括能量存储臂（40），其中所述储能臂（40）包括第一和第二能量存储肢体部分，（46）以限定第一分压器，并且每个能量存储肢体部分包括至少一个能量存储装置（48,50）; 以及连接在能量存储肢体（40）上的避雷器（38），其中所述避雷器臂（38）包括由第二接合部（52）分隔开以限定第二分压器的第一和第二避雷器肢体部分，并且每个避雷器肢体部分包括至少一个避雷器元件（54,56），其中所述第一和第二结（46,52）连接以限定分压器桥，并且所述分压器桥电连接到所述电路（32），以便在使用中提供用于驱动电路（32）的驱动电压。

36. 发明授权

US09070562B2 Circuit including a switching element, a rectifying element, and a charge storage element 有权
标题翻译：电路包括开关元件，整流元件和电荷存储元件
公开(公告)号：US09070562B2
公开(公告)日：2015-06-30
申请号：US13794038
申请日：2013-03-11
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Gary H. Loechelt , Carroll Casteel
IPC分类号： H02M3/158 , H01L27/06 , H03K17/0814 , H03K17/16 , H03K17/74 , H02M1/32 , H02M7/538
CPC分类号： H01L27/0629 , H02M1/32 , H02M3/1588 , H02M7/538 , H03K17/0814 , H03K17/162 , H03K17/74
摘要： A circuit can include a pair of switching elements that have terminals electrically connected to terminals of a power supply and have other terminals electrically connected to an output terminal. The circuit can include rectifying elements and one or more charge storage elements. The circuit may be used as a Buck converter. The rectifying element(s) and charge storage element(s) may help to reduce ringing at an output terminal of the circuit during normal operation and reduce the likelihood of exceeding a breakdown voltage between current-carrying electrodes of a switching element within the circuit during a switching operation.
摘要翻译：电路可以包括一对开关元件，其具有电连接到电源的端子的端子，并且其他端子电连接到输出端子。电路可以包括整流元件和一个或多个电荷存储元件。该电路可以用作降压转换器。整流元件和电荷存储元件可以有助于在正常操作期间减少电路的输出端子处的振铃，并且减小在电路内的开关元件的载流电极之间的击穿电压的可能性切换操作。

37. 发明授权

US09065426B2 High frequency solid state switching for impedance matching 有权
标题翻译：用于阻抗匹配的高频固态开关
公开(公告)号：US09065426B2
公开(公告)日：2015-06-23
申请号：US13830563
申请日：2013-03-14
申请人： Advanced Energy Industries, Inc.
发明人： Christopher C. Mason
IPC分类号： H03H11/28 , H01J37/32 , H03H7/40 , H05H1/46 , H03K17/56 , H03K17/74
CPC分类号： H03H11/28 , H01J37/32183 , H03H7/40 , H03K17/56 , H03K17/74 , H05H2001/4682
摘要： In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN or PIN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor (or reactance element) in or out of a variable capacitance element (or variable reactance element) of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors (or reactance elements) are connected in parallel to provide variable impedance for the purpose of impedance matching.
摘要翻译：根据本发明，通过开关装置和方法解决了上述和其它问题，该开关装置和方法使用具有一对并联固态二极管（例如PN或PIN二极管）的开关电路，其中一个连接到晶体管（例如功率MOSFET或IGBT），将电容器（或电抗元件）切换到阻抗匹配网络的可变电容元件（或可变电抗元件）中或之外。充电晶体管的体电容反向偏置两个二极管中的一个，以便将晶体管与RF信号隔离，从而能够使用低成本的高电容晶体管。多个这样的开关电路和电容器（或电抗元件）并联连接以提供可变阻抗以用于阻抗匹配。

38. 发明授权

US08981380B2 Monolithic integration of silicon and group III-V devices 有权
标题翻译：硅和III-V族器件的整体集成
公开(公告)号：US08981380B2
公开(公告)日：2015-03-17
申请号：US12928103
申请日：2010-12-03
申请人： Michael A. Briere
发明人： Michael A. Briere
IPC分类号： H01L21/00 , H01L27/06 , H01L21/8258 , H03K17/567 , H03K17/74 , H01L29/778 , H01L29/20
CPC分类号： H01L27/0629 , H01L21/8258 , H01L27/0688 , H01L29/2003 , H01L29/7786 , H03K17/567 , H03K17/74
摘要： Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed.
摘要翻译：公开了一种单片集成硅和III-V族器件，其包括在设置在硅衬底上的III-V半导体体中形成的III-V族晶体管。至少一个通孔延伸穿过III-V半导体体，以将III-V族晶体管的至少一个端子耦合到形成在硅衬底中的硅器件。硅器件可以是肖特基二极管，III-V族晶体管可以是GaN HEMT。在一个实施例中，在硅衬底中形成肖特基二极管的阳极。在另一个实施例中，肖特基二极管的阳极形成在硅衬底顶上的轻掺杂的外延硅层中。在一个实施例中，形成了肖特基二极管和III-V族晶体管的并联组合，而在另一实施例中形成串联组合。

39. 发明申请

US20150061751A1 MATRIX-STAGES SOLID STATE ULTRAFAST SWITCH 有权
标题翻译： MATRIX-STAGES固态超声波开关
公开(公告)号：US20150061751A1
公开(公告)日：2015-03-05
申请号：US14480281
申请日：2014-09-08
申请人： Silicon Power Corporation
发明人： Boris RESHETNYAK , Dante E. PICCONE , Victor TEMPLE
IPC分类号： H03K3/57 , H03K17/60 , H03K17/74 , H03K17/10 , H03K17/687
CPC分类号： H03K3/57 , H03K17/0403 , H03K17/10 , H03K17/105 , H03K17/125 , H03K17/60 , H03K17/6871 , H03K17/74
摘要： A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.
摘要翻译：一种用于切换高电压和高电流的半导体开关器件。半导体开关装置包括控制触发级和一个或多个自动触发级。控制触发级包括多个半导体开关，断路开关，控制开关，截止电路和电容器。控制触发级与一个或多个自动触发级串联连接。每个自动触发级包括并联连接的多个半导体开关，断路开关和电容器。控制开关提供控制触发级的选择性接通。当控制触发级接通时，控制触发级的电容器放电到下一个最高级的多个半导体开关的栅极，使其导通。每个自动触发阶段以相邻较低级的电容放电或随着自动触发级的断路开关导通而以级联方式接通。

40. 发明授权

US08917135B2 Circuit with a plurality of diodes and method for controlling such a circuit 有权
标题翻译：具有多个二极管的电路和控制这种电路的方法
公开(公告)号：US08917135B2
公开(公告)日：2014-12-23
申请号：US13893430
申请日：2013-05-14
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch
IPC分类号： H03K17/74
CPC分类号： H03K17/74 , H01L2224/32145 , H03K17/161 , H03K2217/0036
摘要： A circuit includes a diode circuit and a deactivation circuit. The diode circuit includes a first terminal, a second terminal, and a plurality of diodes coupled in parallel between the first terminal and the second terminal. The diode circuit is configured to be forward biased in an on-time and reverse biased in an off-time. The deactivation circuit is configured to switch a first group of the diodes into a deactivation state at a time instant before the end of the on-time, the first group of diodes including one or more but less than all of the diodes included in the diode circuit.
摘要翻译：电路包括二极管电路和去激活电路。二极管电路包括第一端子，第二端子和并联在第一端子和第二端子之间的多个二极管。二极管电路被配置为在关断时间内以导通时间和反向偏置正向偏置。停用电路被配置为在导通时间结束之前的时刻将第二组二极管切换到去激活状态，第一组二极管包括一个或多个但是小于二极管中包含的所有二极管电路。

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