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1. 发明授权

US11929742B2 Method and device for switching an electronic component on or off 有权
公开(公告)号：US11929742B2
公开(公告)日：2024-03-12
申请号：US14759051
申请日：2014-04-23
申请人： VITESCO TECHNOLOIGES GERMANY GMBH
发明人： Goeran Schubert , Andreas Pschorr , Diego Antongirolami , Ulrich Bley
IPC分类号： H03K17/687 , H03K17/0412 , H03K17/042 , H03K17/16 , H03K17/567
CPC分类号： H03K17/687 , H03K17/04123 , H03K17/04206 , H03K17/163 , H03K17/166 , H03K17/567
摘要： An electronic component is switched under the control of a pulse-width modulation signal. The electronic component outputs an output signal that is controlled by a control signal. The switching on or off is initiated within a pulse-width modulation cycle period at a level change time by a change of the pulse-width modulation signal. The control signal is set within each PWM cycle period to a first control value between the level change time and a first switching time, to a second control value between the first switching time and a second switching time, and to a third control value from the second switching time until a final gate-voltage value is reached on the gate of the electronic component. Each switching time of a PWM period is determined in dependence on an amplitude value determined during a preceding PWM cycle period, to limit amplitudes of the oscillation of the output signal.

2. 发明授权

US11848667B2 Load switch circuit and control method 有权
公开(公告)号：US11848667B2
公开(公告)日：2023-12-19
申请号：US17840489
申请日：2022-06-14
申请人： LEN Technology Limited
发明人： Song Qin
IPC分类号： H03K17/687 , H03K17/082 , H03K17/16
CPC分类号： H03K17/6872 , H03K17/0822 , H03K17/163 , H03K17/166 , H03K17/687
摘要： A load switch circuit includes a power transistor, the first terminal is configured to receive the power supply voltage, and the second terminal is the output terminal of the load switch circuit and is coupled with an external inductive load; a clamping module including at least a mutually coupled clamping unit and a driving unit; the clamping unit, including a voltage-current converter and a first resistor, the first resistor is coupled between the output terminal of the voltage-current converter and the second terminal of the power transistor, the output terminal of the drive unit is coupled to the control terminal of the power transistor when the difference between the power supply voltage and the output voltage of the power transistor is greater than or equal to the preset clamping threshold, and the clamping unit outputs an effective drive control signal to the driving unit.

3. 发明公开

US20230261657A1 SLEW-RATE COMPENSATED TRANSISTOR TURNOFF SYSTEM 审中-公开
公开(公告)号：US20230261657A1
公开(公告)日：2023-08-17
申请号：US18307994
申请日：2023-04-27
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Kyoung Min Lee , James M. Walden , Brian Linehan , Yang Zhang
IPC分类号： H03K19/003 , H03K17/16 , H03K17/081 , H03K17/0812
CPC分类号： H03K19/00384 , H03K17/166 , H03K17/08104 , H03K17/08122 , H03K17/0812 , H03K17/163
摘要： In a transistor turnoff system, a transistor control circuit is configured to adjust a control voltage at a transistor control output responsive to a comparison signal at a control input. The control voltage has a slew rate. A comparator has a comparator output and first and second comparator inputs. The first comparator input is coupled to the transistor control output. The comparator is configured to: provide the comparison signal at the comparator output based on a reference voltage at the second comparator input; and deactivate the transistor control circuit by changing a state of the comparison signal responsive to the control voltage falling below the reference voltage. A slew-rate compensator is configured to increase the reference voltage by a compensation voltage that compensates for a time delay of the comparator or the transistor control circuit. The compensation voltage is proportional to the slew rate.

4. 发明授权

US10644623B2 Motor drive apparatus and motor drive apparatus control method 有权
公开(公告)号：US10644623B2
公开(公告)日：2020-05-05
申请号：US15776840
申请日：2016-12-01
申请人： Mitsuba Corporation
发明人： Tamotsu Iwazaki , Toru Furusawa , Takashi Hoshino , Tomofumi Kobayashi
IPC分类号： H02P6/16 , H02P6/182 , H02P6/26 , H02K29/08 , H02M7/5387 , H02P27/08 , H03K7/08 , H03K17/16 , H03K17/687
CPC分类号： H02P6/16 , H02K29/08 , H02M7/53871 , H02P6/26 , H02P27/085 , H03K7/08 , H03K17/163 , H03K17/6872
摘要： Based on an output signal, among a plurality of switching elements, an element control part outputs a PWM signal having a maximum duty ratio to a pair of switching elements that drive a first coil among a plurality of coils to a high level, outputs a PWM signal having a minimum duty ratio to a pair of switching elements that are connected to each other in series and that drive a second coil among the plurality of coils to a low level, and outputs a PWM signal having a medium duty ratio between the maximum duty ratio of the PWM signal and the minimum duty ratio of the PWM signal to a pair of switching elements that are connected to each other in series and that drive a third coil among the plurality of coils.

5. 发明申请

US20190199193A1 METHOD AND DEVICE FOR CONTROLLING MOSFET SWITCHING MODULES 审中-公开
公开(公告)号：US20190199193A1
公开(公告)日：2019-06-27
申请号：US16229733
申请日：2018-12-21
申请人： GE Energy Power Conversion Technology Limited
发明人： Hendrik Gloes , Martin Geske , Piotr Szczupak
IPC分类号： H02M1/08 , H03K17/687
CPC分类号： H02M1/08 , H02M1/44 , H02M7/538 , H02M2001/0054 , H03K17/163 , H03K17/6871
摘要： A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.

6. 发明申请

US20180367132A1 DRIVE CIRCUIT OF TRANSISTOR 审中-公开
公开(公告)号：US20180367132A1
公开(公告)日：2018-12-20
申请号：US16110147
申请日：2018-08-23
申请人： BYD COMPANY LIMITED
发明人： Ping FU , Fei GAO
IPC分类号： H03K17/081 , H02H9/04
CPC分类号： H03K17/08104 , H01L27/0255 , H02H9/045 , H02M1/08 , H03K17/08142 , H03K17/0822 , H03K17/163 , H03K17/166 , H03K19/0185
摘要： The present disclosure discloses a drive circuit of a transistor, including: a high-voltage power supply and a low-voltage power supply; a high-voltage power supply domain circuit and a low-voltage power supply domain circuit, where the high-voltage power supply domain circuit is connected to the high-voltage power supply; an electrostatic discharge apparatus; a level shifter circuit, wherein the level shifter circuit includes a level detection circuit, a current limiting module, a discharge module, and a switch transistor, the level detection circuit is connected to a positive electrode of the high-voltage power supply and is separately connected to the current limiting module, the discharge module, and the high-voltage power supply domain circuit, the current limiting module is further connected to a first end of the switch transistor, the discharge module is further connected to a negative electrode of the high-voltage power supply, a control end of the switch transistor is connected to the low-voltage power supply domain circuit and a second end of the switch transistor is connected to a negative electrode of the low-voltage power supply, the current limiting module is configured to limit the discharged electricity when the drive circuit performs electrostatic discharge, and the discharge module is configured to form a discharge assisting path between the negative electrode of the high-voltage power supply and the first end of the switch transistor to assist electrostatic discharge of the drive circuit.

7. 发明申请

US20180331633A1 CIRCUIT ARRANGEMENT FOR USE IN A POWER CONVERSION STAGE AND A METHOD OF CONTROLLING A POWER CONVERSION STAGE 审中-公开
公开(公告)号：US20180331633A1
公开(公告)日：2018-11-15
申请号：US15590142
申请日：2017-05-09
申请人： City University of Hong Kong
发明人： Shu Hung Henry Chung , Kewei Wang
IPC分类号： H02M7/53846 , H02M1/08 , H02M7/5387
CPC分类号： H02M7/5387 , H02M1/12 , H02M3/155 , H03K17/163
摘要： A circuit arrangement for use in a power conversion stage and a method of controlling a power conversion stage includes at least two electronic devices connected in series, the at least two electronic devices including at least one active power electronic device operable in a plurality of operation states including an active linearly operated state; wherein the at least one active power electronic device is arranged to be controlled and to operate in the plurality of operation states in each of a plurality conversion cycles, such that a generation of electric harmonics in the power conversion stage is suppressed during an operation of the power conversion stage.

8. 发明申请

US20180301549A1 ELECTRIC POWER CONVERTER 审中-公开
公开(公告)号：US20180301549A1
公开(公告)日：2018-10-18
申请号：US15767310
申请日：2016-10-17
申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
发明人： Yujiro TAKEUCHI , Mutsuhiro MORI
IPC分类号： H01L29/739 , H01L29/872 , H01L29/16 , H01L29/10 , H03K17/16 , H02M7/5387
CPC分类号： H01L29/7397 , H01L29/1095 , H01L29/1608 , H01L29/739 , H01L29/78 , H01L29/872 , H02M1/08 , H02M7/48 , H02M7/5387 , H02M7/53875 , H02M2001/0048 , H02P27/06 , H03K17/08128 , H03K17/08148 , H03K17/163 , H03K17/168 , Y02B70/1483 , Y02B70/1491
摘要： An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.

9. 发明申请

US20180269870A1 GATE POTENTIAL CONTROL DEVICE 审中-公开
公开(公告)号：US20180269870A1
公开(公告)日：2018-09-20
申请号：US15903242
申请日：2018-02-23
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Hidetoshi MORISHITA , Hikaru WATANABE
IPC分类号： H03K17/16 , H03K17/0812 , H03K17/687
CPC分类号： H03K17/162 , H03K17/08122 , H03K17/163 , H03K17/166 , H03K17/687
摘要： A gate potential control device configured to control potential of a gate of a main switching element is provided herein. The gate potential control device includes: a turn-on switching element and a turn-off switching element. In a turn-off operation, a main voltage between main terminals of the main switching element increases from an on-voltage to a peak value of a surge voltage and then decreases to an off-voltage. The gate potential control device is configured to keep both of the turn-on switching element and the turn-off switching element turned off in a period which is at least a part of a specific period in the turn-off operation, the specific period being from a timing after a predetermined time lapse from a timing of rise-up of the main voltage from the on-voltage to a timing at which the main voltage reaches the peak value.

10. 发明申请

US20180248540A1 SWITCHING CIRCUIT 审中-公开
公开(公告)号：US20180248540A1
公开(公告)日：2018-08-30
申请号：US15965007
申请日：2018-04-27
申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
发明人： Takuya ISHII , Daijiro ARISAWA , Masanori ITO , Takao HASHIMOTO , Takeshi AZUMA , Miwa ISHITSUBO , Kazuhiro MURATA
IPC分类号： H03K3/013 , H03K17/16 , H05K1/18
CPC分类号： H03K3/013 , H02M1/08 , H02M2001/348 , H03K17/161 , H03K17/163 , H05K1/0243 , H05K1/181 , H05K2201/10166 , H05K2201/10545
摘要： A switching circuit includes main switching a device and a drive circuit. The main switching device has a gate terminal, a drain terminal, and a first source terminal through which a main current flows, and a second source terminal for gate drive connected to drive circuit. The drive circuit has a bias capacitor having a negative electrode terminal connected to the second source terminal, a first series circuit formed between a positive electrode terminal and the gate terminal by connecting a high-side switch, a resistor, and a capacitor in series, and a second series circuit formed between the gate terminal and the second source terminal by connecting the capacitor, a resistor and a low-side switch in series. The drive circuit adjusts each of gate charge and discharge currents, and further damps the oscillation of the waveform of gate current/voltage.

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