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1. 发明申请

US20220077849A1 ELECTRONIC CIRCUITRY AND ELECTRONIC APPARATUS 有权
公开(公告)号：US20220077849A1
公开(公告)日：2022-03-10
申请号：US17196748
申请日：2021-03-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kentaro IKEDA
IPC分类号： H03K17/082 , H03K17/567 , H03K17/693
摘要： According to one embodiment, electronic circuitry includes a first surge voltage detection circuit configured to detect a surge voltage generated due to switching of a switching device and generate a first signal indicating a first current; and a current generation circuit configured to generate a second current larger than the first current by amplifying a current in response to input of the first signal and output the second current to a control terminal of the switching device.

2. 发明申请

US20170104484A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170104484A1
公开(公告)日：2017-04-13
申请号：US15386201
申请日：2016-12-21
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA , Hiroshi Mochikawa , Atsuhiko Kuzumaki
IPC分类号： H03K17/567 , H01L29/861 , H01L27/06 , H01L29/872 , H01L29/20 , H01L29/778
CPC分类号： H03K17/567 , H01L27/0605 , H01L27/0629 , H01L29/2003 , H01L29/7787 , H01L29/861 , H01L29/872 , H03K17/74
摘要： A semiconductor device according to one embodiment includes a first normally-off type transistor including a first source, a first drain, a first gate, and a first body diode, a second normally-off type transistor including a second source connected to the first source, a second drain, a second gate connected to the first gate, and a second body diode, a normally-on type transistor including a third source connected to the first drain, a third drain, and a third gate connected to the second drain, and a diode including an anode connected to the second drain and a cathode connected to the third drain.

3. 发明申请

US20160218099A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160218099A1
公开(公告)日：2016-07-28
申请号：US15003080
申请日：2016-01-21
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA
IPC分类号： H01L27/06 , H01L29/778 , H01L27/02 , H01L29/861 , H01L29/16 , H01L29/78 , H01L29/20 , H01L49/02
CPC分类号： H01L29/861 , H02M3/155
摘要： A semiconductor device according to an embodiment includes a normally-off transistor having a first drain, a first source electrically connected to a source terminal, and a first gate electrically connected to a gate terminal, a normally-on transistor having a second source electrically connected to the first drain, a second drain electrically connected to a voltage terminal, and a second gate electrically connected to the first source, a coil component provided between the voltage terminal and the second drain, and a first diode having a first anode electrically connected to the first drain and the second source, and a first cathode electrically connected to the coil component and the voltage terminal.
摘要翻译：根据实施例的半导体器件包括常闭晶体管，其具有第一漏极，电源连接到源极端子的第一源极和电连接到栅极端子的第一栅极，具有第二源极的正常导通晶体管，电连接到电压端子的第二漏极和与第一源电连接的第二栅极，设置在电压端子和第二漏极之间的线圈部件，以及第一二极管，其具有电连接到第一漏极和第二源极以及与线圈部件和电压端子电连接的第一阴极。

4. 发明申请

US20160069946A1 SEMICONDUCTOR INSPECTION APPARATUS 有权
标题翻译：半导体检测装置
公开(公告)号：US20160069946A1
公开(公告)日：2016-03-10
申请号：US14807335
申请日：2015-07-23
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA
IPC分类号： G01R31/26 , H01L29/778 , H01L29/20
CPC分类号： G01R31/2621 , H01L29/2003 , H01L29/7787
摘要： The semiconductor inspection apparatus according to an embodiment includes a first detecting unit capable of being electrically connected to a source electrode of a field effect transistor to be evaluated, the first detecting unit used for detecting voltage, a first diode including a first anode electrode and a first cathode electrode, the first cathode electrode capable of being electrically connected to a drain electrode of the field effect transistor, a second detecting unit electrically connected to the first anode electrode, the second detecting unit used for detecting voltage, a first resistance element of which a first end is electrically connected to the first anode electrode, and a first electric power source electrically connected to a second end of the first resistance element.
摘要翻译：根据实施例的半导体检查装置包括能够电连接到待评估的场效应晶体管的源电极的第一检测单元，用于检测电压的第一检测单元，包括第一阳极电极和第一阴极，能够电连接到场效应晶体管的漏电极的第一阴极电极，与第一阳极电连接的第二检测单元，用于检测电压的第二检测单元，其中第一阴极电极的第一电阻元件第一端电连接到第一阳极电极，第一电源电连接到第一电阻元件的第二端。

5. 发明申请

US20200373918A1 PEAK HOLD CIRCUIT AND POWER CONVERTER 审中-公开
公开(公告)号：US20200373918A1
公开(公告)日：2020-11-26
申请号：US16817875
申请日：2020-03-13
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION
发明人： Kentaro IKEDA
IPC分类号： H03K5/1532 , H02M7/539
摘要： A peak hold circuit has a first capacitor and a second capacitor that are serially connected between a voltage input node and a reference voltage node, a first rectifying element that has an anode connected to the reference voltage node and a cathode connected to a connection node of the first capacitor and the second capacitor, a second rectifying element that has an anode connected to the connection node of the first capacitor and the second capacitor, and a cathode, and a third capacitor that is connected between the cathode of the second rectifying element and the reference voltage node, wherein a peak value of a surge voltage input to the voltage input node is output from the cathode of the second rectifying element.

6. 发明申请

US20190296636A1 SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, DRIVING DEVICE, VEHICLE, AND ELEVATOR 审中-公开
公开(公告)号：US20190296636A1
公开(公告)日：2019-09-26
申请号：US16120994
申请日：2018-09-04
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA
IPC分类号： H02M1/32 , H02H1/00 , H02H9/04 , H02M7/5387 , G01R19/165 , G01R31/00
摘要： Provided is a semiconductor device including: a semiconductor element having a first electrode, a second electrode, and a gate electrode; a surge voltage measuring unit electrically connected to the first electrode or the second electrode to measure a surge voltage; at least one measuring unit selected from a first measuring unit measuring electromagnetic noise caused by an operation of the semiconductor element, a second measuring unit measuring a voltage of a wiring electrically connected to the first electrode or the second electrode, and a third measuring unit measuring a current of the wiring electrically connected to the first electrode or the second electrode; a variable resistor electrically connected to the gate electrode; and a controller controlling the variable resistor based on measurement results of the surge voltage measuring unit and the at least one measuring unit and change a resistance value of the variable resistor.

7. 发明申请

US20180375423A1 SEMICONDUCTOR DEVICE, POWER CONVERTING DEVICE, DRIVING DEVICE, VEHICLE, AND ELEVATOR 审中-公开
公开(公告)号：US20180375423A1
公开(公告)日：2018-12-27
申请号：US15889414
申请日：2018-02-06
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA
IPC分类号： H02M1/32 , H01L27/06 , H01L27/02 , H02M7/537 , B66B11/04
CPC分类号： H02M1/32 , B60L3/003 , B60L15/007 , B60L50/51 , B60L2210/40 , B60L2240/527 , B66B11/043 , H01L27/0248 , H01L27/0288 , H01L27/0629 , H01L28/20 , H01L28/60 , H01L29/78 , H01L29/861 , H02M1/08 , H02M7/537 , H02M7/5387 , H02M2001/0029 , H02P27/06
摘要： A semiconductor device of an embodiment includes a first diode having a first anode and a first cathode, the first anode connected to either one of first and second electrodes of a first transistor having the first and second electrodes and a first gate electrode; a first electric resistor having a first one end connected to the first cathode and a first other end connected to positive pole of a direct-current power source; a first capacitor having a second one end and a second other end connected to the first cathode; a second capacitor having a third one end connected to negative pole of the direct-current power source and a third other end connected to the second one end of the first capacitor; and a second switching element connected in parallel to the second capacitor.

8. 发明申请

US20170077048A1 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, AND DRIVE DEVICE 有权
标题翻译：半导体器件，逆变器电路和驱动器件
公开(公告)号：US20170077048A1
公开(公告)日：2017-03-16
申请号：US15235404
申请日：2016-08-12
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA , Kazuto Takao , Ryosuke Iijima
IPC分类号： H01L23/64 , H01L29/78 , H01L49/02 , H02M7/44 , H01L23/58 , H01L23/427 , H01L23/62 , H01L29/16 , H01L23/373
CPC分类号： H01L23/645 , H01L23/3735 , H01L23/427 , H01L23/585 , H01L23/62 , H01L25/072 , H01L25/074 , H01L28/40 , H01L29/1608 , H01L29/7805 , H02M7/003
摘要： A semiconductor device of an embodiment includes a first electrode, a second electrode facing the first electrode, an alternating-current electrode, a first switching element provided between the first electrode and the alternating-current electrode, and a second switching element provided between the second electrode and the alternating-current electrode. The first switching element and the second switching element are electrically connected in series between the first electrode and the second electrode, and the alternating-current electrode is electrically connected between the first switching element and the second switching element.
摘要翻译：实施例的半导体器件包括第一电极，面对第一电极的第二电极，交流电极，设置在第一电极和交流电极之间的第一开关元件，以及设置在第二电极之间的第二开关元件电极和交流电极。第一开关元件和第二开关元件串联地电连接在第一电极和第二电极之间，并且交流电极电连接在第一开关元件和第二开关元件之间。

9. 发明申请

US20160087625A1 GATE CONTROL DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR CONTROLLING SEMICONDUCTOR DEVICE 有权
标题翻译：栅极控制装置，半导体装置和用于控制半导体装置的方法
公开(公告)号：US20160087625A1
公开(公告)日：2016-03-24
申请号：US14824228
申请日：2015-08-12
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA , Masahiko KURAGUCHI
IPC分类号： H03K17/687 , H01L29/20 , H01L29/778
CPC分类号： H03K17/687 , H01L29/1066 , H01L29/2003 , H01L29/7786 , H01L29/7787 , H03K17/04123 , H03K17/063 , H03K17/163 , H03K2217/0036
摘要： A semiconductor device according to an embodiments controls a gate voltage to be applied to a gate electrode of a junction field effect transistor including a source electrode, a drain electrode, and the gate electrode, the transistor having a first threshold voltage at which the transistor is turned on, and a second threshold at which conductivity modulation occurs in the transistor so as to make the gate voltage equal to or higher than the second threshold voltage when a forward current in a direction from the drain electrode toward the source electrode flows, and so as to make the time variation in gate voltage have a point from which the rate of the time variation starts decreasing at a voltage between the second threshold voltage and the first threshold voltage when the forward current to be shut down.
摘要翻译：根据实施例的半导体器件控制要施加到包括源电极，漏电极和栅电极的结型场效应晶体管的栅电极的栅极电压，晶体管具有晶体管的第一阈值电压导通，并且在从漏电极朝向源电极的方向上的正向电流流动时，在晶体管中发生电导率调制的第二阈值，以使栅极电压等于或高于第二阈值电压，因此使得栅极电压的时间变化具有当要关闭的正向电流时时间变化的速率开始在第二阈值电压和第一阈值电压之间的电压下降的点。

10. 发明申请

US20140098585A1 RECTIFYING CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：修复电路和半导体器件
公开(公告)号：US20140098585A1
公开(公告)日：2014-04-10
申请号：US13927611
申请日：2013-06-26
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro IKEDA
IPC分类号： H02M7/04 , H01L27/06
CPC分类号： H02M7/04 , H01L27/0605 , H01L27/0629 , H01L27/0817 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/19105 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a rectifying circuit includes a transistor, a rectifying element and a resistor. The transistor includes a control electrode, a first electrode and a second electrode. The rectifying element includes an anode electrode and a cathode electrode. The cathode electrode is electrically connected to the first electrode. The resistor includes one end and one other end. The One end of the resistor is electrically connected to the control electrode. The one other end of the resistor is electrically connected to the anode electrode.
摘要翻译：根据一个实施例，整流电路包括晶体管，整流元件和电阻器。晶体管包括控制电极，第一电极和第二电极。整流元件包括阳极电极和阴极电极。阴极与第一电极电连接。电阻器包括一端和另一端。电阻器的一端电连接到控制电极。电阻器的另一端电连接到阳极电极。

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