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1. 发明授权

US10439025B2 Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component 有权
公开(公告)号：US10439025B2
公开(公告)日：2019-10-08
申请号：US16181959
申请日：2018-11-06
申请人： Infineon Technologies Austria AG
发明人： Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L21/22 , H01L21/265 , H01L29/08 , H01L29/167 , H01L29/36 , H01L29/66 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/10
摘要： A first part of a semiconductor body is provided. Impurities are introduced into the first part of the semiconductor body, The impurities act as recombination centers in the semiconductor body and form a recombination Zone, and the impurities include at least a heavy metal. A second part of the semiconductor body is epitaxially produced on the first part after introducing the impurities in the first part. During epitaxially producing the second part of the semiconductor body on the first part of the semiconductor body, impurities in the first part of the semiconductor body are diffused to the second part of the semiconductor body.

2. 发明授权

US09219121B2 Semiconductor component having a transition region 有权
标题翻译：半导体元件具有过渡区域
公开(公告)号：US09219121B2
公开(公告)日：2015-12-22
申请号：US14513357
申请日：2014-10-14
申请人： Infineon Technologies Austria AG
发明人： Frank Pfirsch
IPC分类号： H01L29/76 , H01L29/423 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/78 , H01L21/28 , H01L29/66 , H01L29/40 , H01L29/417
CPC分类号： H01L29/7811 , H01L21/28008 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/66704 , H01L29/7397 , H01L29/7813 , H01L29/7825
摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor component including a semiconductor body having a cell array region with trenches and an edge region with pn junction. A transition region with at least one trench is formed between the cell array region and the edge region.
摘要翻译：公开了半导体部件。一个实施例提供了一种半导体元件，其包括具有沟槽的单元阵列区域和具有pn结的边缘区域的半导体本体。在单元阵列区域和边缘区域之间形成具有至少一个沟槽的过渡区域。

3. 发明授权

US09190511B2 Semiconductor component with a drift region and a drift control region 有权
标题翻译：具有漂移区域和漂移控制区域的半导体部件
公开(公告)号：US09190511B2
公开(公告)日：2015-11-17
申请号：US13915277
申请日：2013-06-11
申请人： Infineon Technologies Austria AG
发明人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
IPC分类号： H01L29/732 , H01L29/78 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/66 , H01L29/872 , H01L29/10 , H01L29/417 , H01L29/49
CPC分类号： H01L29/7803 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4916 , H01L29/66734 , H01L29/7802 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
摘要翻译：具有漂移区域和漂移控制区域的半导体部件。一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。在漂移区域和漂移控制区域之间布置积累电介质。

4. 发明授权

US09171841B2 Field plate trench transistor and method for producing it 有权
标题翻译：场板沟槽晶体管及其制造方法
公开(公告)号：US09171841B2
公开(公告)日：2015-10-27
申请号：US14296665
申请日：2014-06-05
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
IPC分类号： H01L29/78 , H01L27/07 , H01L29/66 , H01L29/732 , H01L29/735 , H01L29/861 , H01L27/04 , H01L29/06 , H01L29/40 , H01L29/423
CPC分类号： H01L29/7813 , H01L27/04 , H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/404 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/732 , H01L29/735 , H01L29/7803 , H01L29/7808 , H01L29/861
摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
摘要翻译：具有半导体本体的场板沟槽晶体管。在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

5. 发明授权

US09082813B2 Power device and a reverse conducting power IGBT 有权
标题翻译：功率器件和反向导通功率IGBT
公开(公告)号：US09082813B2
公开(公告)日：2015-07-14
申请号：US13748172
申请日：2013-01-23
申请人： Infineon Technologies Austria AG
发明人： Frank Pfirsch
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/08
CPC分类号： H01L29/7395 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/7397 , H01L29/7802 , H01L29/7813
摘要： A semiconductor device is provided which includes a semiconductor body having a base region and a main horizontal surface, and a first electrode arranged on the main horizontal surface. The semiconductor body further includes a plurality of vertical trenches having gate electrodes in a vertical cross-section. A body region forms a first pn-junction with the base region and extends between two of the vertical trenches. A source region is in ohmic contact with the first electrode and arranged between the two vertical trenches. An anti-latch-up region is arranged between the two vertical trenches and in ohmic contact with the first electrode. The anti-latch-up region has a maximum doping concentration which is higher than a maximum doping concentration of the body region. An anode region forms a rectifying pn-junction with the base region only and adjoins a third one of the vertical trenches, and has ohmic contact with the first electrode.
摘要翻译：提供一种半导体器件，其包括具有基极区域和主水平表面的半导体本体，以及布置在主水平表面上的第一电极。半导体主体还包括具有垂直横截面的栅电极的多个垂直沟槽。体区域与基极区域形成第一pn结，并在两个垂直沟槽之间延伸。源极区域与第一电极欧姆接触并且布置在两个垂直沟槽之间。在两个垂直沟槽之间布置防闩锁区域并与第一电极欧姆接触。防闩锁区域具有高于身体区域的最大掺杂浓度的最大掺杂浓度。阳极区域仅与基极区域形成整流pn结，并与第三垂直沟槽相邻，并与第一电极欧姆接触。

6. 发明申请

US20150008480A1 SEMICONDUCTOR COMPONENT 有权
标题翻译：半导体元件
公开(公告)号：US20150008480A1
公开(公告)日：2015-01-08
申请号：US14495046
申请日：2014-09-24
申请人： Infineon Technologies Austria AG
发明人： Holger Ruething , Frank Pfirsch , Armin Willmeroth , Frank Hille , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L29/08 , H01L29/739
CPC分类号： H01L29/0696 , H01L21/22 , H01L29/083 , H01L29/0834 , H01L29/36 , H01L29/7395 , H01L29/7397
摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.
摘要翻译：公开了半导体部件。一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。提供了单元区域中第一导电类型的漂移区。漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。

7. 发明授权

US08917135B2 Circuit with a plurality of diodes and method for controlling such a circuit 有权
标题翻译：具有多个二极管的电路和控制这种电路的方法
公开(公告)号：US08917135B2
公开(公告)日：2014-12-23
申请号：US13893430
申请日：2013-05-14
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch
IPC分类号： H03K17/74
CPC分类号： H03K17/74 , H01L2224/32145 , H03K17/161 , H03K2217/0036
摘要： A circuit includes a diode circuit and a deactivation circuit. The diode circuit includes a first terminal, a second terminal, and a plurality of diodes coupled in parallel between the first terminal and the second terminal. The diode circuit is configured to be forward biased in an on-time and reverse biased in an off-time. The deactivation circuit is configured to switch a first group of the diodes into a deactivation state at a time instant before the end of the on-time, the first group of diodes including one or more but less than all of the diodes included in the diode circuit.
摘要翻译：电路包括二极管电路和去激活电路。二极管电路包括第一端子，第二端子和并联在第一端子和第二端子之间的多个二极管。二极管电路被配置为在关断时间内以导通时间和反向偏置正向偏置。停用电路被配置为在导通时间结束之前的时刻将第二组二极管切换到去激活状态，第一组二极管包括一个或多个但是小于二极管中包含的所有二极管电路。

8. 发明申请

US20130175605A1 FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT 有权
公开(公告)号：US20130175605A1
公开(公告)日：2013-07-11
申请号：US13717126
申请日：2012-12-17
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
IPC分类号： H01L27/04
CPC分类号： H01L29/7813 , H01L27/04 , H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/404 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/732 , H01L29/735 , H01L29/7803 , H01L29/7808 , H01L29/861
摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

9. 发明授权

US10547291B2 Circuit with a plurality of transistors and method for controlling such a circuit 有权
公开(公告)号：US10547291B2
公开(公告)日：2020-01-28
申请号：US14968540
申请日：2015-12-14
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch
IPC分类号： H03K5/00 , H03K3/012 , H03K17/16 , H03K17/74
摘要： A circuit includes a transistor circuit including a first node, a second node, and a plurality of transistors coupled in parallel between the first node and the second node. The circuit further includes a drive circuit configured to switch on a first group of the plurality of transistors, the first group including a first subgroup and a second subgroup and each of the first subgroup and the second subgroup including one or more of the transistors. The drive circuit is further configured to switch off the first subgroup at the end of a first time period and switch off the second subgroup at a time instant before the end of the first time period.

10. 发明授权

US09231565B2 Circuit with a plurality of bipolar transistors and method for controlling such a circuit 有权
标题翻译：具有多个双极晶体管的电路和用于控制这种电路的方法
公开(公告)号：US09231565B2
公开(公告)日：2016-01-05
申请号：US13893450
申请日：2013-05-14
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch
IPC分类号： H03K5/00 , H03K3/012 , H03K17/16
CPC分类号： H03K3/012 , H03K17/08148 , H03K17/127 , H03K17/14 , H03K17/16 , H03K17/168 , H03K17/74 , H03K2217/0036
摘要： A circuit includes a bipolar transistor circuit including a first node, a second node, and a plurality of bipolar transistors coupled in parallel between the first node and the second node. The circuit further includes a drive circuit configured to switch on a first group of the plurality of bipolar transistors, the first group including a first subgroup and a second subgroup and each of the first subgroup and the second subgroup including one or more of the bipolar transistors. The drive circuit is further configured to switch off the first subgroup at the end of a first time period and switch off the second subgroup at a time instant before the end of the first time period.
摘要翻译：电路包括双极晶体管电路，该双极晶体管电路包括在第一节点和第二节点之间并联耦合的第一节点，第二节点和多个双极晶体管。电路还包括驱动电路，其配置为接通多个双极晶体管的第一组，第一组包括第一子组和第二子组，并且第一子组和第二子组中的每一个包括一个或多个双极晶体管。驱动电路还被配置为在第一时间段结束时关闭第一子组并且在第一时间段结束之前的时刻关闭第二子组。

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