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31. 发明授权

US5336356A Apparatus for treating the surface of a semiconductor substrate 失效
标题翻译：用于处理半导体衬底的表面的设备
公开(公告)号：US5336356A
公开(公告)日：1994-08-09
申请号：US914326
申请日：1992-07-17
申请人： Cozy Ban , Toshiaki Ohmori , Takaaki Fukumoto
发明人： Cozy Ban , Toshiaki Ohmori , Takaaki Fukumoto
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , H01L21/00
CPC分类号： H01L21/02049
摘要： In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.
摘要翻译：在用于处理半导体衬底的表面的设备中，将氟化氢溶解在非水溶剂中，使无水氟化氢离子化，并使溶液蒸发。将溶液的蒸气引入到反应室中的半导体表面上以处理该表面。可以对半导体衬底进行诸如清洁和蚀刻的处理，而不会在表面上产生反应产物。

32. 发明授权

US5098866A Method for reducing hot-electron-induced degradation of device characteristics 失效
标题翻译：降低热电子诱导的器件特性退化的方法
公开(公告)号：US5098866A
公开(公告)日：1992-03-24
申请号：US290073
申请日：1988-12-27
申请人： David R. Clark , Charlotte M. Tipton
发明人： David R. Clark , Charlotte M. Tipton
IPC分类号： H01L21/02 , H01L21/28 , H01L21/306 , H01L29/51
CPC分类号： H01L21/02054 , H01L21/02049 , H01L21/28211 , H01L29/51 , H01L29/513 , Y10S438/906 , Y10S438/91
摘要： Hot-electron-induced degradation of a semiconductor device (10) is reduced by converting the silicon surface (18) to a fluorinated-silicon compound interface region (23). The fluorinated-silicon compound interface region (23) is formed by etching the device (10) in a fumer (30) using anhydrous hydrofluoric acid. After a sacrificial oxide is grown over the silicon surface (18), the device (10) is placed in a container (32). A mixture of nitrogen, moistened nitrogen and nitrogen/anhydrous hydrofluoric acid is injected into the container (32) to conduct the etch. The anhydrous hydrofluoric acid converts the silicon to a fluorinated-silicon compound, such as H.sub.2 SiF.sub.6, and water. The fluorinated-silicon compound interface region (23) has stronger molecular bonds than the typical hydrogen-silicon formed at the oxide/silicon interface and is, therefore, less likely to be broken apart by hot-electrons.
摘要翻译：通过将硅表面（18）转化为氟化硅化合物界面区域（23）来减少半导体器件（10）的热电子诱导的退化。通过使用无水氢氟酸在燃烧器（30）中蚀刻装置（10）来形成氟化硅化合物界面区域（23）。在硅表面（18）上生长牺牲氧化物之后，将装置（10）放置在容器（32）中。将氮气，氮气和氮气/无水氢氟酸的混合物注入容器（32）以进行蚀刻。无水氢氟酸将硅转化成氟化硅化合物，例如H 2 SiF 6和水。氟化硅化合物界面区域（23）具有比在氧化物/硅界面处形成的典型氢 - 硅更强的分子键，因此不太可能被热电子分解。

33. 发明授权

US5022961A Method for removing a film on a silicon layer surface 失效
标题翻译：去除硅层表面上的膜的方法
公开(公告)号：US5022961A
公开(公告)日：1991-06-11
申请号：US557550
申请日：1990-07-24
申请人： Akira Izumi , Keiji Toei , Nobuatsu Watanabe , Yong-Bo Chong
发明人： Akira Izumi , Keiji Toei , Nobuatsu Watanabe , Yong-Bo Chong
IPC分类号： C04B41/53 , H01L21/306 , H01L21/311
CPC分类号： H01L21/02049 , C04B41/5346 , H01L21/31116 , Y10S438/906
摘要： A method for removing a film on a silicon layer formed on a surface of a substrate includes the steps of: (a) placing a substrate in a reaction chamber to be isolated hermetically from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into the reaction chamber. Preferably, the method further includes the step of feeding only alcohol into the reaction chamber prior to and/or subsequent to the step (b). An alcohol layer is formed on the substrate surface, whereby the film can be removed uniformly by anhydrous hydrogen fluoride. A by-product of the reaction is taken out from the system of reaction by means of the alcohol on the substrate. No by-product remains on the substrate after the reaction. Since the silicon layer after the reaction is covered with alcohol, re-growth of a native oxide film thereon is also suppressed and on ionic contamination such as fluorine remains on the substrate surface.
摘要翻译：一种除去形成在基板表面上的硅层上的膜的方法，包括以下步骤：（a）将基板放置在反应室内，与外部空气密封隔离，（b）供给无水氟化氢和酒精同时进入反应室。优选地，该方法还包括在步骤（b）之前和/或之后仅将醇进料到反应室中的步骤。在基板表面上形成醇层，由此可以通过无水氟化氢均匀地除去膜。反应的副产物通过基体上的醇从反应体系中取出。反应后基板上不会残留副产物。由于反应后的硅层被醇覆盖，其上的自然氧化膜的再生长也被抑制，并且离子污染如氟残留在基材表面上。

34. 发明授权

US4940505A Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation 失效
标题翻译：用中间粘合剂生长单晶硅并结合热和光解活化的方法
公开(公告)号：US4940505A
公开(公告)日：1990-07-10
申请号：US279566
申请日：1988-12-02
申请人： Steven R. Schachameyer , Mark W. Beranek
发明人： Steven R. Schachameyer , Mark W. Beranek
IPC分类号： H01L21/205 , H01L21/306
CPC分类号： H01L21/02046 , H01L21/02049 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658 , Y10S117/904 , Y10S148/017 , Y10S148/048 , Y10S438/974
摘要： A method is provided for epitaxially growing single crystalline silicon on a silicon substrate (10) from a silicon-bearing gas (26) at a temperature below the pyrolytic threshold of the gas and at temperatures below those normally required for epitaxial growth. An oxidized silicon substrate (10) is fluorinated (equation 2, FIG. 2) to replace the silicon-oxide layer with an adsorbed fluorinated layer. The substrate is placed in a laser photo-CVD reactor chamber (20), the chamber is evacuated to a sub-UHV level of 10.sup.-3 to 10.sup.-7 Torr, the substrate is heated to 570.degree. C., hydrogen gas (24) is introduced into the chamber, and excimer pulsed ultraviolet laser radiation (32 from laser 12) is applied through the hydrogen gas to impinge the wafer substrate. The combined effect removes regrown native oxide and removes the adsorbed fluorinated layer and breaks the hydrogen into atomic hydrogen such that the latter bonds with the silicon in the substrate and replaces the adsorbed fluorinated layer with silicon-hydrogen bonds (equation 4, FIG. 2). The substrate is maintained at 570.degree. C. and disilane is introduced into the chamber, and excimer pulsed ultraviolet laser radiation is applied through the disilane gas to impinge the wafer substrate. The combined effect breaks the silicon-hydrogen bond and decomposes the disilane to silane and an unstable intermediate SiH.sub.z which decomposes to hydrogen and atomic silicon (equation 5, FIG. 2), which atomic silicon bonds to the now unbonded silicon in the substrate to epitaxially grow single crystalline silicon.
摘要翻译：提供了一种用于在低于气体的热解阈值的温度下并且低于通常外延生长所需温度的温度从含硅气体（26）在硅衬底（10）上外延生长单晶硅的方法。氟化氧化硅衬底（10）（等式2，图2）以用吸附的氟化层代替氧化硅层。将基板放置在激光光CVD反应器室（20）中，将室抽真空至10-3至10-7乇的亚UHV水平，将基板加热至570℃，加入氢气（24 ）引入室中，并且通过氢气施加准分子脉冲紫外激光辐射（来自激光器12的32）以冲击晶片衬底。组合效应除去再生长的自然氧化物并除去吸附的氟化层并将氢分解成原子氢，使得后者与衬底中的硅结合并用硅 - 氢键取代吸附的氟化层（方程式4，图2）。将基板保持在570℃，并将乙硅烷引入室中，并通过乙硅烷气体施加准分子脉冲紫外激光辐射以冲击晶片基板。组合效应破坏硅 - 氢键并将乙硅烷分解成硅烷和分解成氢和原子硅的不稳定中间SiHH（等式5，图2），其原子硅键合到衬底中的现在未结合的硅到外延生长单晶硅。

35. 发明授权

US11955381B2 Low-temperature plasma pre-clean for selective gap fill 有权
公开(公告)号：US11955381B2
公开(公告)日：2024-04-09
申请号：US16908076
申请日：2020-06-22
申请人： Applied Materials, Inc.
发明人： Yi Xu , Yufei Hu , Kazuya Daito , Geraldine M. Vasquez , Da He , Jallepally Ravi , Yu Lei , Dien-Yeh Wu
IPC分类号： H01L21/02 , H01J37/32 , H01L21/67 , H01L21/768
CPC分类号： H01L21/76883 , H01J37/32174 , H01L21/02049 , H01L21/02063 , H01L21/67028
摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

36. 发明申请

US20180211844A1 NATURALLY OXIDIZED FILM REMOVING METHOD AND NATURALLY OXIDIZED FILM REMOVING DEVICE 审中-公开
公开(公告)号：US20180211844A1
公开(公告)日：2018-07-26
申请号：US15744401
申请日：2016-06-07
申请人： TOKYO ELECTRON LIMITED , CENTRAL GLASS CO., LTD.
发明人： Jun LIN , Koji TAKEYA , Shinichi KAWAGUCHI , Mitsuhiro TACHIBANA , Akifumi YAO , Kunihiro YAMAUCHI
IPC分类号： H01L21/302 , H01L21/02
CPC分类号： H01L21/302 , H01L21/02046 , H01L21/02049 , H01L21/0237 , H01L21/67103 , H01L21/68742
摘要： A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is β-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

37. 发明授权

US09991130B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09991130B2
公开(公告)日：2018-06-05
申请号：US15683058
申请日：2017-08-22
申请人： Renesas Electronics Corporation
发明人： Katsuro Tateyama
IPC分类号： H01L21/3205 , H01L21/3065 , H01L21/02 , H01L21/308 , H01L21/3213 , H01L29/40 , H01L29/423 , H01L29/66 , H01L21/768 , H01L29/78 , H01L23/532 , H01L23/535
CPC分类号： H01L21/3065 , H01L21/02049 , H01L21/308 , H01L21/32135 , H01L21/32137 , H01L21/76805 , H01L21/76843 , H01L21/76895 , H01L23/53266 , H01L23/535 , H01L29/401 , H01L29/4236 , H01L29/66734 , H01L29/7813
摘要： A trench is formed at an exposed portion of a semiconductor substrate by performing a dry etching process with a hard mask of silicon oxide film serving as an etching mask in a dry etching device. At this time, a mixed gas of tetrafluoromethane (CF4), a hydrogen bromide gas (HBr), and a chlorine gas (Cl2) is used as an etching gas. The dry etching process is performed under the condition that a flow rate ratio is more than 0 and less than 0.04, the flow rate ratio being a value obtained by dividing a flow rate NF by a flow rate TF, the flow rate NF being a flow rate obtained by dividing a flow rate of the tetrafluoromethane by the number of fluorine atoms bonded to one molecule of the tetrafluoromethane, the flow rate TF being a total flow rate of the hydrogen bromide gas and the chlorine gas.

38. 发明申请

US20180138038A1 CLEANING METHOD 审中-公开
公开(公告)号：US20180138038A1
公开(公告)日：2018-05-17
申请号：US15853397
申请日：2017-12-22
申请人： Applied Materials, Inc.
发明人： Christopher S. OLSEN , Peter STONE , Teng-fang KUO , Ping Han HSIEH , Manoj VELLAIKAL
IPC分类号： H01L21/02 , H01L21/687 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/02658 , H01J2237/334 , H01L21/02046 , H01L21/02049 , H01L21/02052 , H01L21/0206 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/3065 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/68742
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

39. 发明申请

US20180061652A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20180061652A1
公开(公告)日：2018-03-01
申请号：US15683058
申请日：2017-08-22
申请人： Renesas Electronics Corporation
发明人： Katsuro TATEYAMA
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/308 , H01L21/3213 , H01L29/40 , H01L29/423
CPC分类号： H01L21/3065 , H01L21/02049 , H01L21/308 , H01L21/32135 , H01L21/32137 , H01L21/76805 , H01L21/76843 , H01L21/76895 , H01L23/53266 , H01L23/535 , H01L29/401 , H01L29/4236 , H01L29/66734 , H01L29/7813
摘要： A trench is formed at an exposed portion of a semiconductor substrate by performing a dry etching process with a hard mask of silicon oxide film serving as an etching mask in a dry etching device. At this time, a mixed gas of tetrafluoromethane (CF4), a hydrogen bromide gas (HBr), and a chlorine gas (Cl2) is used as an etching gas. The dry etching process is performed under the condition that a flow rate ratio is more than 0 and less than 0.04, the flow rate ratio being a value obtained by dividing a flow rate NF by a flow rate TF, the flow rate NF being a flow rate obtained by dividing a flow rate of the tetrafluoromethane by the number of fluorine atoms bonded to one molecule of the tetrafluoromethane, the flow rate TF being a total flow rate of the hydrogen bromide gas and the chlorine gas.

40. 发明授权

US09870921B2 Cleaning method 有权
公开(公告)号：US09870921B2
公开(公告)日：2018-01-16
申请号：US15259489
申请日：2016-09-08
申请人： Applied Materials, Inc.
发明人： Christopher S. Olsen , Peter Stone , Teng-fang Kuo , Ping Han Hsieh , Manoj Vellaikal
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： H01L21/02658 , H01J2237/334 , H01L21/02046 , H01L21/02049 , H01L21/02052 , H01L21/0206 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/3065 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/68742
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

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