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1. 发明授权

US5098866A Method for reducing hot-electron-induced degradation of device characteristics 失效
标题翻译：降低热电子诱导的器件特性退化的方法
公开(公告)号：US5098866A
公开(公告)日：1992-03-24
申请号：US290073
申请日：1988-12-27
申请人： David R. Clark , Charlotte M. Tipton
发明人： David R. Clark , Charlotte M. Tipton
IPC分类号： H01L21/02 , H01L21/28 , H01L21/306 , H01L29/51
CPC分类号： H01L21/02054 , H01L21/02049 , H01L21/28211 , H01L29/51 , H01L29/513 , Y10S438/906 , Y10S438/91
摘要： Hot-electron-induced degradation of a semiconductor device (10) is reduced by converting the silicon surface (18) to a fluorinated-silicon compound interface region (23). The fluorinated-silicon compound interface region (23) is formed by etching the device (10) in a fumer (30) using anhydrous hydrofluoric acid. After a sacrificial oxide is grown over the silicon surface (18), the device (10) is placed in a container (32). A mixture of nitrogen, moistened nitrogen and nitrogen/anhydrous hydrofluoric acid is injected into the container (32) to conduct the etch. The anhydrous hydrofluoric acid converts the silicon to a fluorinated-silicon compound, such as H.sub.2 SiF.sub.6, and water. The fluorinated-silicon compound interface region (23) has stronger molecular bonds than the typical hydrogen-silicon formed at the oxide/silicon interface and is, therefore, less likely to be broken apart by hot-electrons.
摘要翻译：通过将硅表面（18）转化为氟化硅化合物界面区域（23）来减少半导体器件（10）的热电子诱导的退化。通过使用无水氢氟酸在燃烧器（30）中蚀刻装置（10）来形成氟化硅化合物界面区域（23）。在硅表面（18）上生长牺牲氧化物之后，将装置（10）放置在容器（32）中。将氮气，氮气和氮气/无水氢氟酸的混合物注入容器（32）以进行蚀刻。无水氢氟酸将硅转化成氟化硅化合物，例如H 2 SiF 6和水。氟化硅化合物界面区域（23）具有比在氧化物/硅界面处形成的典型氢 - 硅更强的分子键，因此不太可能被热电子分解。

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