会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Method for removing a film on a silicon layer surface
    • 去除硅层表面上的膜的方法
    • US5022961A
    • 1991-06-11
    • US557550
    • 1990-07-24
    • Akira IzumiKeiji ToeiNobuatsu WatanabeYong-Bo Chong
    • Akira IzumiKeiji ToeiNobuatsu WatanabeYong-Bo Chong
    • C04B41/53H01L21/306H01L21/311
    • H01L21/02049C04B41/5346H01L21/31116Y10S438/906
    • A method for removing a film on a silicon layer formed on a surface of a substrate includes the steps of: (a) placing a substrate in a reaction chamber to be isolated hermetically from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into the reaction chamber. Preferably, the method further includes the step of feeding only alcohol into the reaction chamber prior to and/or subsequent to the step (b). An alcohol layer is formed on the substrate surface, whereby the film can be removed uniformly by anhydrous hydrogen fluoride. A by-product of the reaction is taken out from the system of reaction by means of the alcohol on the substrate. No by-product remains on the substrate after the reaction. Since the silicon layer after the reaction is covered with alcohol, re-growth of a native oxide film thereon is also suppressed and on ionic contamination such as fluorine remains on the substrate surface.
    • 一种除去形成在基板表面上的硅层上的膜的方法,包括以下步骤:(a)将基板放置在反应室内,与外部空气密封隔离,(b)供给无水氟化氢和 酒精同时进入反应室。 优选地,该方法还包括在步骤(b)之前和/或之后仅将醇进料到反应室中的步骤。 在基板表面上形成醇层,由此可以通过无水氟化氢均匀地除去膜。 反应的副产物通过基体上的醇从反应体系中取出。 反应后基板上不会残留副产物。 由于反应后的硅层被醇覆盖,其上的自然氧化膜的再生长也被抑制,并且离子污染如氟残留在基材表面上。