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31. 发明申请

US20150232988A1 VAPOR PHASE GROWTH APPARATUS 审中-公开
标题翻译：蒸气相生长装置
公开(公告)号：US20150232988A1
公开(公告)日：2015-08-20
申请号：US14427237
申请日：2013-09-26
申请人： TAIYO NIPPONSANSO CORPORATION , TN EMC LTD.
发明人： Akira Yamaguchi , Akinori Ubukata , Yuya Yamaoka , Kosuke Uchiyama
IPC分类号： C23C16/458 , C23C16/52
CPC分类号： C23C16/4583 , C23C16/44 , C23C16/4584 , C23C16/4585 , C23C16/52 , H01L21/6719 , H01L21/67754 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： Provided is a high-productivity, compact vapor phase growth apparatus 1. This vapor phase growth apparatus 1 is configured to supply a raw material gas onto a substrate 5 placed in a chamber 2 that can be vertically divided into a chamber main body 3 and a chamber cover 4 to cause a thin film to grow on the substrate 5. This vapor phase growth apparatus 1 includes a susceptor 7 formed from a circular plate that is detachably arranged on the chamber main body 3 side and is configured to hold the substrate 5, a susceptor cover 9 to be placed on the susceptor 7 so as to cover a region other than a substrate holding portion of the susceptor 7, a ceiling plate 11 that is provided separated from the susceptor 7 by a predetermined interval and faces the susceptor 7 to form a flow path of the raw material gas, and a temporary placement apparatus 21 configured to temporarily place at least one of the susceptor 7, the susceptor cover 9, and the ceiling plate 11 in a space above the chamber main body 3 formed when the chamber 2 has been divided.
摘要翻译：提供了一种高生产率，小型气相生长装置1.该气相生长装置1构成为将原料气体供给到放置在室2中的基板5上，该室2可以纵向分割成室主体3和室盖4使薄膜在基板5上生长。该气相生长装置1包括由圆板形成的基座7，其可拆卸地布置在室主体3侧并且构造成保持基板5，将基座7放置在基座7上，以覆盖基座7的基板保持部以外的区域;顶板11，其从基座7隔开预定间隔设置，并与基座7相对; 形成原料气体的流路，临时配置装置21将基座7，基座罩9和顶板11中的至少一个临时放置在室主体上方的空间当室2被分割时形成的主体3。

32. 发明申请

US20150190835A1 EXTENDED LIFE DEPOSITION RING 审中-公开
标题翻译：延长生命沉积环
公开(公告)号：US20150190835A1
公开(公告)日：2015-07-09
申请号：US14663384
申请日：2015-03-19
申请人： Applied Materials, Inc.
发明人： Lara HAWRYLCHAK
IPC分类号： B05B15/04
CPC分类号： H01L21/68735 , C23C16/4585
摘要： A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.
摘要翻译：提供了一种用于半导体处理室的处理套件。在一个实施例中，处理套件包括环形沉积环主体，其包括凹入主体的上表面的槽，其中槽的最低点延伸到由顶壁限定的至少一半的环体的厚度，一个底壁。在另一个实施例中，处理套件包括环形沉积环体，其包括限定主体上表面的至少一部分的倾斜上壁，其中，倾斜的上壁的峰从主体的内壁延伸至至少内壁与身体外壁之间的一半距离。

33. 发明申请

US20150179489A1 Substrate Processing Module, Substrate Processing Apparatus Including the same, and Substrate Transferring Method 审中-公开
标题翻译：基板处理模块，基板处理装置及基板转印方法
公开(公告)号：US20150179489A1
公开(公告)日：2015-06-25
申请号：US14573514
申请日：2014-12-17
申请人： Eugene Technology Co., Ltd.
发明人： Jun-Jin Hyon , Byoung-Gyu Song , Kyong-Hun Kim , Yong-Ki Kim , Yang-Sik Shin , Chang-Dol Kim
IPC分类号： H01L21/677 , C23C16/458
CPC分类号： H01L21/67748 , C23C16/4584 , C23C16/4585 , C23C16/54 , H01L21/6719 , H01L21/68742
摘要： There are provided a substrate processing module, and substrate processing apparatus including the same, and a substrate transferring method. The substrate processing module includes: a chamber having a passage formed on one side thereof and allowing a substrate to enter or exit therethrough; a first susceptor installed within the chamber, having at least one through hole formed in an upper surface thereof, and allowing the substrate to be placed thereon; a second susceptor installed within the chamber and allowing the substrate to be placed thereon; a rotary member provided within the chamber and rotating, based on a preset position; a holder connected to the rotary member and having a mounting surface allowing the substrate to be placed thereon; and a holder driving module driving the rotary member to move the holder to a standby position corresponding to the first susceptor or to a delivery position corresponding to the second susceptor.
摘要翻译：提供了一种基板处理模块，以及包括该基板处理模块的基板处理装置以及基板转印方法。基板处理模块包括：具有在其一侧上形成并允许基板进入或离开的通道的腔室; 安装在所述腔室内的第一感受体，具有形成在其上表面中的至少一个通孔，并允许将所述基底放置在其上; 安装在所述腔室内并允许将所述基底放置在其上的第二感受体; 设置在所述室内并基于预设位置旋转的旋转构件; 连接到旋转构件并具有允许将衬底放置在其上的安装表面的保持器; 以及保持器驱动模块，其驱动旋转构件以将保持器移动到对应于第一基座的待机位置或对应于第二基座的输送位置。

34. 发明授权

US09002674B2 Temperature measurement apparatus, method of measuring temperature profile, recording medium and heat treatment apparatus 有权
标题翻译：温度测量装置，温度曲线测量方法，记录介质和热处理设备
公开(公告)号：US09002674B2
公开(公告)日：2015-04-07
申请号：US13478325
申请日：2012-05-23
申请人： Masayuki Moroi , Hitoshi Kikuchi
发明人： Masayuki Moroi , Hitoshi Kikuchi
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , G01J5/02 , G01J5/08 , G01J5/00
CPC分类号： C23C16/45525 , C23C16/4584 , C23C16/4585 , C23C16/46 , C23C16/52 , G01J5/0007 , G01J5/0022 , G01J5/025 , G01J5/0255 , G01J5/026 , G01J5/0809 , G01J5/0831 , G01J5/089 , G01J5/0893 , G01J2005/0085
摘要： A temperature measurement apparatus for measuring a temperature profile of a substrate mounted on a rotating table, including a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas on a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; a temperature map generating unit that specifies the address of the temperature measurement area based on the number of the temperature measurement areas measured by the radiation temperature measurement unit for each of the scanning operations in the radius direction of the rotating table, and the rotating speed of the rotating table, and stores the temperature in correspondence with the corresponding address in a storing unit; and a temperature data display processing unit that displays a temperature profile of the rotating table.
摘要翻译：一种用于测量安装在旋转台上的基板的温度分布的温度测量装置，包括辐射温度测量单元，其被配置为通过旋转台的半径方向测量旋转台的表面上的多个温度测量区域的温度在半径方向上扫描旋转台的表面; 温度映射生成单元，其基于由所述辐射温度测量单元测量的针对所述旋转台的半径方向上的每个扫描操作的温度测量区域的数量来指定所述温度测量区域的地址，以及所述温度测量区域的旋转速度旋转台，并将与对应的地址对应的温度存储在存储单元中; 以及温度数据显示处理单元，其显示所述旋转台的温度分布。

35. 发明申请

US20150047564A1 CHEMICAL VAPOR DEPOSITION DEVICE 审中-公开
标题翻译：化学蒸气沉积装置
公开(公告)号：US20150047564A1
公开(公告)日：2015-02-19
申请号：US13968328
申请日：2013-08-15
申请人： Samsung SDI Co., Ltd.
发明人： Woo-Jin Kim
IPC分类号： C23C16/04
CPC分类号： C23C16/042 , C23C16/45521 , C23C16/4585
摘要： A chemical vapor deposition device includes a support member configured to support a lower surface of a substrate; a shadow frame configured to cover an edge portion of an upper surface of the substrate; and a jacket having a purge gas supply opening configured to supply a purge gas such that the purge gas exits the purge gas supply opening from a location below the lower surface of the substrate. The jacket is adjacent to a portion of the shadow frame and configured to cover a portion of the lower surface of the substrate. An exhaust unit is located at the jacket or is between the jacket and the shadow frame.
摘要翻译：化学气相沉积装置包括支撑构件，其构造成支撑衬底的下表面; 被构造成覆盖所述基板的上表面的边缘部分的阴影框架; 以及夹套，其具有构造成供应净化气体的净化气体供应开口，使得净化气体从衬底的下表面下方的位置离开净化气体供应开口。护套与阴影框架的一部分相邻并且构造成覆盖衬底的下表面的一部分。排气单元位于护套上或位于护套和阴影框架之间。

36. 发明授权

US08926754B2 Epitaxial growth susceptor 有权
公开(公告)号：US08926754B2
公开(公告)日：2015-01-06
申请号：US12461820
申请日：2009-08-25
申请人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
发明人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
IPC分类号： C23C16/00 , H01L21/306 , C30B25/12 , C23C16/458 , C30B29/06 , H01L21/687 , C23C16/455
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

37. 发明申请

US20140311408A1 Multi-Region Processing System and Heads 审中-公开
标题翻译：多区域处理系统和头
公开(公告)号：US20140311408A1
公开(公告)日：2014-10-23
申请号：US14321198
申请日：2014-07-01
申请人： Intermolecular, Inc.
发明人： Indranil De , Rick Endo , James Tsung , Kurt Weiner , Maosheng Zhao
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , B05B14/30 , B05B16/80 , B05D1/10 , B05D1/62 , C23C16/4412 , C23C16/45589 , C23C16/4584 , C23C16/4585 , C23C16/4587 , C23C16/50 , Y10S438/942
摘要： The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.
摘要翻译：本发明的各种实施例提供了基板和工艺头在最小空间中访问整个晶片的相对运动，以在基板的各个区域上进行组合处理。这些头使得所描述的室内的现场隔离处理和使用其的方法被描述。

38. 发明授权

US08858716B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08858716B2
公开(公告)日：2014-10-14
申请号：US12974228
申请日：2010-12-21
申请人： Fumiaki Hoshino , Hajime Hiraiwa , Katsuhiko Miura
发明人： Fumiaki Hoshino , Hajime Hiraiwa , Katsuhiko Miura
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/683 , H01L21/687 , H01L21/677 , H01L21/67 , C23C16/458
CPC分类号： H01L21/68721 , C23C16/4585 , H01L21/6719 , H01L21/67748
摘要： In a vacuum processing apparatus, a substrate chuck mechanism member is attached to a substrate holder provided in a vacuum processing chamber, includes a shaft member, first and second coil springs that are provided at the two ends, respectively, of the shaft member, and a substrate chuck plate provided at the end of the shaft member, and is additionally attached to the substrate holder using the substrate chuck plate by elastic biasing of the first coil spring. The holding state of the substrate on the substrate holder is changed by the expansion/contraction actions of the first and second coil springs in accordance with the reciprocal movement of the substrate holder.
摘要翻译：在真空处理装置中，将基板卡盘机构部件安装在设置在真空处理室中的基板保持架上，包括轴构件，分别设置在轴构件的两端的第一和第二螺旋弹簧，以及设置在所述轴构件的端部的基板卡盘板，并且通过所述第一螺旋弹簧的弹性偏压使用所述基板卡盘板附加到所述基板保持器。基板保持器上的基板的保持状态根据基板保持器的往复运动而由第一和第二螺旋弹簧的膨胀/收缩动作改变。

39. 发明申请

US20140263169A1 METHODS FOR PROCESSING A SUBSTRATE USING MULTIPLE SUBSTRATE SUPPORT POSITIONS 有权
标题翻译：使用多个基板支持位置处理基板的方法
公开(公告)号：US20140263169A1
公开(公告)日：2014-09-18
申请号：US13837261
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： JOUNG JOO LEE , WILLIAM JOHANSON , KEITH A. MILLER , ALAN A. RITCHIE
IPC分类号： C23C16/50 , C23C16/52 , H01J37/302 , H01J37/305
CPC分类号： C23C14/34 , C23C14/50 , C23C16/4585 , H01J37/32091 , H01J37/34 , H01L21/3065 , H01L21/68764
摘要： In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position.
摘要翻译：在一些实施例中，用于处理具有基板支撑件的处理室中的基板的方法，所述基板支撑件被配置为在垂直于处理套件的盖环的顶表面的方向上移动，可以包括将基板支撑件定位在第一位置，使得基板的顶表面位于围绕衬底支撑件的周边设置的处理套件的覆盖环的顶表面下方约至10mm的约3mm处; 在衬底支撑件处于第一位置时执行等离子体沉积工艺; 将衬底支撑件移动到第二位置，使得衬底的顶表面设置在覆盖环的顶表面上方约15mm至约15mm处; 以及在衬底支撑件处于第二位置时执行等离子体蚀刻工艺。

40. 发明申请

US20140213068A1 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD 审中-公开
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：US20140213068A1
公开(公告)日：2014-07-31
申请号：US14243977
申请日：2014-04-03
申请人： Tokyo Electron Limited
发明人： Hitoshi Kato , Manabu Honma , Yasushi Takeuchi
IPC分类号： H01L21/02 , H01L21/677
CPC分类号： H01L21/0228 , C23C16/45544 , C23C16/45548 , C23C16/45557 , C23C16/45563 , C23C16/45591 , C23C16/4585 , H01L21/67706
摘要： A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas. The separation member has a bent portion that substantially fills in a gap between the turntable and the chamber.
摘要翻译：一种成膜装置，包括：分离部件，该分离部件延伸以覆盖转台的旋转中心，并且在转盘上方的转盘的圆周上的两个不同点，从而将腔室的内部分离成第一区域和第二区域; 第一反应气体供给部，其向第一区域内的转台供给第一反应气体; 第二反应气体供给部，其向第二区域的转台供给第二反应气体; 排出第一反应气体和与第一反应气体会聚的第一分离气体的第一排气口; 以及抽出第二反应气体和与第二反应气体会聚的第一分离气体的第二排气口。分离构件具有基本上填充在转盘和腔室之间的间隙的弯曲部分。

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