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31. 发明授权

US08853097B2 Particle reducing method 有权
标题翻译：减粒法
公开(公告)号：US08853097B2
公开(公告)日：2014-10-07
申请号：US13743508
申请日：2013-01-17
申请人： Tokyo Electron Limited
发明人： Hitoshi Kato , Hiroyuki Kikuchi , Takeshi Kumagai
IPC分类号： H01L21/02 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4581 , C23C16/4405 , C23C16/4554 , C23C16/45551 , C23C16/4584 , C23C16/50 , H01J37/32458 , H01J37/32715 , H01J37/32733 , H01J37/32825 , H01J2237/032 , H01J2237/201 , H01J2237/20214 , H01J2237/332 , H01L21/0206
摘要： A particle reducing method includes a step of supplying a first gas to a vacuum chamber in which a susceptor, formed by an insulating object and the surface of which is provided with a substrate mounting portion, is rotatably provided; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the substrate mounting portion, on which a substrate is not mounted, to the plasma while rotating the susceptor.
摘要翻译：一种粒子还原方法包括：将第一气体供给到真空室，其中由绝缘物体形成的基座和其表面设置有基板安装部分的基座可旋转地设置; 通过向设置在真空室中的等离子体发生装置供给高频波而从第一气体产生等离子体的步骤; 以及在旋转基座的同时将未安装基板的基板安装部暴露于等离子体的步骤。

32. 发明授权

US08753447B2 Heat shield for heater in semiconductor processing apparatus 有权
标题翻译：半导体加工装置用加热器用隔热罩
公开(公告)号：US08753447B2
公开(公告)日：2014-06-17
申请号：US12482042
申请日：2009-06-10
申请人： Gary Lind , John Floyd Ostrowski
发明人： Gary Lind , John Floyd Ostrowski
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , C23C16/4401 , C23C16/4581
摘要： A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield. Further, the heat shield significantly reduces the amount of undesired depositions from gas-entrained constituents on components in the chamber of the apparatus, particularly below or beyond the heat shield, by as much as 90% since the temperature drop is as much as ten orders of magnitude difference.
摘要翻译：在半导体处理装置中使用的隔热罩包括具有低热导率的高性能绝缘体，例如低于在设备的操作中使用的宽范围的温度范围内的静止空气的热导率。例如，绝缘体的导热率可以在约0℃至约600℃或更高的温度范围内在约0.004W / m·h至约0.4W / m·h的范围内。与没有屏蔽的达到相同的期望温度所需的加热器功率消耗的情况相比，高性能隔热罩的部署将加热器所需的功率消耗降低多达20％以达到所需的加工温度。此外，热屏蔽显着地减少了装置室内部件上气体夹带的成分不希望的沉积量，特别是低于或超过隔热层的沉积量多达90％，因为温度下降高达十次的差异。

33. 发明授权

US08641825B2 Substrate temperature regulation fixed apparatus 有权
标题翻译：基板温度调节固定装置
公开(公告)号：US08641825B2
公开(公告)日：2014-02-04
申请号：US12482482
申请日：2009-06-11
申请人： Hiroshi Yonekura , Miki Saito , Koki Tamagawa
发明人： Hiroshi Yonekura , Miki Saito , Koki Tamagawa
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/6875 , C23C16/4581 , C23C16/4586 , H01J2237/2001 , H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.
摘要翻译：基板温度调节固定装置具有放置真空物体的基础物质，粘合剂层和基板。基材通过粘合剂层固定在基板上。粘合剂层含有具有耐等离子体性的物质。

34. 发明授权

US08460470B2 Vapor phase deposition apparatus and support table 有权
标题翻译：气相沉积装置和支撑台
公开(公告)号：US08460470B2
公开(公告)日：2013-06-11
申请号：US13297483
申请日：2011-11-16
申请人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
发明人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C16/4581 , C23C16/4585 , C30B25/10 , C30B29/06 , C30B35/00
摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.
摘要翻译：气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

35. 发明申请

US20130120897A1 Electrostatic Chuck with Photo-Patternable Soft Protrusion Contact Surface 有权
标题翻译：静电卡盘与光图案软突起接触面
公开(公告)号：US20130120897A1
公开(公告)日：2013-05-16
申请号：US13667516
申请日：2012-11-02
申请人： Entegris, Inc.
发明人： I-Kuan Lin , Richard A. Cooke , Jakub Rybczynski
IPC分类号： H02N13/00
CPC分类号： H01L21/6831 , C23C16/4581 , H01L21/6875 , H01L21/68757 , H02N13/00
摘要： In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer.
摘要翻译：根据本发明的实施例，提供了一种用于静电卡盘的软突起结构，其提供用于晶片，工件或其它基板的非研磨接触表面，同时具有改进的可制造性和与接地的平台台板设计的兼容性。软突起结构包括可光致图案的聚合物。

36. 发明申请

US20130095658A1 METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD AND APPARATUS 审中-公开
标题翻译：金属有机化学蒸气沉积方法和装置
公开(公告)号：US20130095658A1
公开(公告)日：2013-04-18
申请号：US13470346
申请日：2012-05-13
申请人： Chih-Yung Huang , Szu-Hao Chen , Ching-Chiun Wang , Chien-Chih Chen
发明人： Chih-Yung Huang , Szu-Hao Chen , Ching-Chiun Wang , Chien-Chih Chen
IPC分类号： H01L21/285 , C23C16/46
CPC分类号： C23C16/4581
摘要： A metal organic chemical vapor deposition (MOCVD) method and apparatus are provided. The MOCVD method includes: providing a substrate, in which a metal-based material layer is disposed on a first surface of the substrate; putting the substrate on a base in a chamber, in which the metal-based material layer is between the substrate and the base; and performing a MOCVD process on a second surface opposite to the first surface. The difference in thermal conductivity between the metal-based material layer and the substrate is in the range of 1 W/m° C. to 20 W/m° C., and the thermal expansion coefficients of the metal-based material layer and the substrate are of the same order.
摘要翻译：提供了一种金属有机化学气相沉积（MOCVD）方法和装置。 MOCVD方法包括：提供基板，其中金属基材料层设置在基板的第一表面上; 将基板放置在室中的基部，其中金属基材料层位于基板和基体之间; 以及在与所述第一表面相对的第二表面上执行MOCVD处理。金属基材料层和基板之间的热导率差在1W / m℃〜20W / m℃的范围内，金属系材料层和底物具有相同的顺序。

37. 发明授权

US08372205B2 Reducing electrostatic charge by roughening the susceptor 有权
标题翻译：通过粗化基座来减少静电电荷
公开(公告)号：US08372205B2
公开(公告)日：2013-02-12
申请号：US11182168
申请日：2005-07-15
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

38. 发明授权

US08216643B2 Methods for preparation of high-purity polysilicon rods using a metallic core means 有权
标题翻译：使用金属芯制备高纯度多晶硅棒的方法
公开(公告)号：US08216643B2
公开(公告)日：2012-07-10
申请号：US12160837
申请日：2007-05-21
申请人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi , Sang Jin Moon
发明人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi , Sang Jin Moon
IPC分类号： C23C16/24
CPC分类号： C23C16/4581 , C01B33/035 , C23C16/24 , Y10T428/2913
摘要： A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.
摘要翻译：一种使用金属芯装置制备多晶硅棒的方法，包括：将芯装置安装在用于制备硅棒的沉积反应器的内部空间中，所述芯装置通过在至少一个分离层的表面上形成金属芯元件，与电极装置连接，通过电极装置供电来加热芯装置，并将反应气体供给到用于硅沉积的内部空间中，从而在表面上形成向外的沉积输出核心手段。沉积输出和芯装置可以容易地从通过硅沉积过程获得的硅棒输出分离，并且可以最小化由金属芯元件的杂质引起的沉积输出的污染，从而高纯度的硅可以准备更经济，便捷。

39. 发明申请

US20120111271A1 CHEMICAL VAPOR DEPOSITION REACTOR 失效
标题翻译：化学蒸气沉积反应器
公开(公告)号：US20120111271A1
公开(公告)日：2012-05-10
申请号：US12248167
申请日：2008-10-09
申请人： Michael J. Begarney , Frank J. Campanale
发明人： Michael J. Begarney , Frank J. Campanale
IPC分类号： C23C16/455 , B67D7/02 , F16L35/00
CPC分类号： H01L21/67017 , C23C16/45508 , C23C16/45565 , C23C16/45574 , C23C16/4581 , C23C16/4584 , Y10T137/9247
摘要： A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.
摘要翻译：提供CVD反应器，例如进行外延层的金属有机化学气相沉积的MOCVD反应器。 CVD或MOCVD反应器通常包括流动凸缘组件，可调节比例流动注射器组件，室组件和多段中心旋转轴。反应器为特定组分提供了新颖的几何形状，其功能可以减少气体使用，同时也提高了沉积的性能。

40. 发明授权

US08021487B2 Wafer carrier with hub 失效
标题翻译：带轮毂的晶圆架
公开(公告)号：US08021487B2
公开(公告)日：2011-09-20
申请号：US12001761
申请日：2007-12-12
申请人： Vadim Boguslavskiy , Alexander I. Gurary
发明人： Vadim Boguslavskiy , Alexander I. Gurary
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4581 , C23C16/4584 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate.
摘要翻译：用于旋转圆盘CVD反应器的晶片载体包括诸如碳化硅的陶瓷的整体板，其限定晶片保持特征，例如其上游表面上的凹穴，并且还包括可拆卸地安装到板的中心区域中的毂。轮毂提供与反应器主轴的牢固连接，而不会在陶瓷板上产生集中应力。在清洁板时可以拆下轮毂。

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