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31. 发明申请

US20110269261A1 DEVICES AND METHODS OF PROTECTING A CADMIUM SULFIDE FOR FURTHER PROCESSING 有权
标题翻译：保护锑硫化物进一步加工的装置和方法
公开(公告)号：US20110269261A1
公开(公告)日：2011-11-03
申请号：US12771515
申请日：2010-04-30
申请人： Jennifer Ann Drayton , Richard Ernest Demaray
发明人： Jennifer Ann Drayton , Richard Ernest Demaray
IPC分类号： H01L31/18 , H01L49/02
CPC分类号： C23C14/0629 , H01L31/073 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer.An intermediate substrate for forming a cadmium telluride based thin-film photovoltaic device is also provided.
摘要翻译：提供了在基板上保护硫化镉层的方法。该方法可以包括在溅射压力（例如约10mTorr至约150mTorr）下将硫化镉层从硫化镉靶溅射到衬底上，并且将覆盖层直接溅射在硫化镉层上。可以将盖层直接溅射到硫化镉层上，而不会破坏溅射压力的真空。还提供了用于通过在基底上沉积硫化镉层来制造碲化镉基薄膜光伏器件的方法，将覆盖层直接沉积在硫化镉层上，加热衬底以使盖层的至少一部分从硫化镉层，然后在镉硫化物层上沉积碲化镉层。还提供了一种用于形成碲化镉基薄膜光伏器件的中间衬底。

32. 发明申请

US20110259732A1 METHODS FOR HIGH-RATE SPUTTERING OF A COMPOUND SEMICONDUCTOR ON LARGE AREA SUBSTRATES 有权
标题翻译：大面积基片上化合物半导体的高速溅射方法
公开(公告)号：US20110259732A1
公开(公告)日：2011-10-27
申请号：US12765268
申请日：2010-04-22
申请人： Sean Timothy Halloran , Robert Dwayne Gossman , Russell Weldon Black
发明人： Sean Timothy Halloran , Robert Dwayne Gossman , Russell Weldon Black
IPC分类号： C23C14/35
CPC分类号： C23C14/0629 , C23C14/35 , C23C14/562 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm2 to about 2500 cm2.
摘要翻译：通常提供用于在单个基底上溅射薄膜的方法。可以将单个基底输送到真空室中以吸收小于约50mTorr的溅射压力。然后，各个基板可以被输送到溅射室中并且经过平面磁控管，在溅射压力下通过电离气体连续地溅射靶，使得在单个基板的表面上形成薄膜。在大于约1kW的功率水平下，目标受到频率从约400kHz至约4MHz的高频功率。在一个具体实施方案中，该方法通常可以涉及在限定表面积为约1000cm 2至约2500cm 2的表面的各个基材上溅射薄膜。

33. 发明授权

US07888165B2 Methods of forming a phase change material 有权
标题翻译：形成相变材料的方法
公开(公告)号：US07888165B2
公开(公告)日：2011-02-15
申请号：US12191446
申请日：2008-08-14
申请人： Keith R. Hampton
发明人： Keith R. Hampton
IPC分类号： H01L21/00
CPC分类号： H01L45/143 , C23C14/0629 , C23C14/3414 , C23C14/5826 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： Methods of forming a phase change material are disclosed. The method includes forming a chalcogenide compound on a substrate and simultaneously applying a bias voltage to the substrate to alter the stoichiometry of the chalcogenide compound. In another embodiment, the method includes positioning a substrate and a deposition target having a first stoichiometry in a deposition chamber. A plasma is generated in the deposition chamber to form a phase change material on the substrate. The phase change material has a stoichiometry similar to the first stoichiometry. A bias voltage is applied to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry. A phase change material, a phase change random access memory device, and a semiconductor structure are also disclosed.
摘要翻译：公开了形成相变材料的方法。该方法包括在衬底上形成硫族化合物，同时向衬底施加偏压以改变硫属化物化合物的化学计量。在另一个实施例中，该方法包括将沉积室中具有第一化学计量的衬底和沉积靶定位。在沉积室中产生等离子体，以在衬底上形成相变材料。相变材料具有类似于第一化学计量的化学计量。将偏置电压施加到衬底以将相变材料的化学计量转换为第二化学计量。还公开了相变材料，相变随机存取存储器件和半导体结构。

34. 发明申请

US20090246940A1 System and method for depositing a material on a substrate 有权
标题翻译：用于在基材上沉积材料的系统和方法
公开(公告)号：US20090246940A1
公开(公告)日：2009-10-01
申请号：US12320060
申请日：2009-01-15
申请人： Rick C. Powell
发明人： Rick C. Powell
IPC分类号： H01L21/36 , B05C9/14
CPC分类号： H01L21/02631 , C23C14/0629 , C23C14/32 , H01J37/32009 , H01J37/32541 , H01J37/3255 , H01J37/32623
摘要： A method and apparatus for depositing a film on a substrate includes a plasma source positioned proximate to a distributor configured to provide a semiconductor coating on a substrate.
摘要翻译：用于在衬底上沉积膜的方法和设备包括位于靠近分配器定位的等离子体源，其被配置为在衬底上提供半导体涂层。

35. 发明授权

US07157135B2 Co-extruded high refractive index coated embossable film 有权
$Co-extruded high refractive index coated embossable film$
标题翻译：共挤出高折射率涂布的可压印薄膜
公开(公告)号：US07157135B2
公开(公告)日：2007-01-02
申请号：US10863621
申请日：2004-06-09
申请人： Wolfgang Decker , Christopher S. Curry , Hiroaki Watanabe , Arthur Eric Bartholomay
发明人： Wolfgang Decker , Christopher S. Curry , Hiroaki Watanabe , Arthur Eric Bartholomay
IPC分类号： B32B7/02 , B32B18/00 , B32B27/06 , B32B27/08 , B32B27/32 , B32B32/36 , B32B32/34 , B32B37/16
CPC分类号： B32B27/08 , B32B37/153 , B32B38/06 , B32B2255/10 , B32B2255/20 , B32B2307/416 , C23C14/0629 , C23C14/541 , C23C14/562 , Y10S428/91 , Y10T428/24942 , Y10T428/24967 , Y10T428/24975 , Y10T428/26 , Y10T428/263 , Y10T428/265 , Y10T428/269 , Y10T428/31504 , Y10T428/31507 , Y10T428/31678 , Y10T428/31681 , Y10T428/31692 , Y10T428/31699 , Y10T428/31703 , Y10T428/31721 , Y10T428/31725 , Y10T428/31736 , Y10T428/31739 , Y10T428/3175 , Y10T428/31786 , Y10T428/31797 , Y10T428/31855 , Y10T428/31909 , Y10T428/31935 , Y10T428/31938 , Y10T428/31971
摘要： An embossable film for creating holograms and diffraction gratings and methods of producing the embossable films are provided. The embossable film includes a base layer and a co-extruded embossable layer that is coated with a transparent high refractive index (HRI) coating prior to embossing.
摘要翻译：提供了一种用于产生全息图的可压纹膜和衍射光栅以及制造可压印膜的方法。可压花膜包括基底层和在压花之前涂覆有透明高折射率（HRI）涂层的共挤出可压花层。

36. 发明申请

US20030161944A1 Vacuum deposition of powdered phosphor 审中-公开
标题翻译：粉末荧光粉的真空沉积
公开(公告)号：US20030161944A1
公开(公告)日：2003-08-28
申请号：US10085550
申请日：2002-02-26
申请人： The Regents of the University of California
发明人： Randy A. Barksdale , Ronald B. Robinson , Sharon S. Alvarez , Gary D. Power
IPC分类号： B05B005/00 , B05D003/02 , B05D001/12
CPC分类号： C23C14/0629
摘要： A vacuum deposition process for depositing powdered phosphor on fiber optic face plates, such as the output fiber optic window of gated image intensifiers. The process involves resistive heating vacuum deposition of a powdered phosphor, such as Zn, CD, (S) to a thickness of 7900 Angstroms, for example, after which it is annealed which promotes a columnar growth and makes the phosphor efficient. The thus annealed phosphor can then be directly overcoated with aluminum of a thinner coating than over a powdered phosphor produced by prior known methods due to the smoother surface produced by this process.
摘要翻译：用于在光纤面板上沉积粉末状磷光体的真空沉积工艺，例如门控图像增强器的输出光纤窗口。该方法包括电阻加热真空沉积诸如Zn，CD，（S）的粉末状荧光体至7900埃的厚度，然后进行退火，其促进柱状生长并使荧光体有效。因此，由于该方法产生的更平滑的表面，所以这样退火的荧光体可以直接用涂层薄的铝覆盖，而不是由现有已知方法产生的粉状荧光粉。

37. 发明授权

US5994642A Method for preparing CdTe film and solar cell using the same 失效
标题翻译：使用该CdTe薄膜和太阳能电池的方法
公开(公告)号：US5994642A
公开(公告)日：1999-11-30
申请号：US89
申请日：1998-03-13
申请人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
发明人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
IPC分类号： C23C14/06 , H01L21/363 , H01L27/142 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.
摘要翻译： PCT No.PCT / JP97 / 01791 Sec。 371日期1998年3月13日 102（e）1998年3月13日PCT PCT 1997年5月27日PCT公布。公开号WO97 / 45880 PCT 日期1997年12月4日公开了通过改进的紧密间隔升华法形成质量好的CdTe膜的方法。该方法包括：在支撑体上涂敷含有CdTe半导体材料的糊状物，形成在支撑体表面含有半导体材料的涂膜的工序; 紧密配置支撑部件的步骤和要形成CdTe膜的基板，以使涂膜面对基板的表面; 以及在基板上形成CdTe膜的步骤，通过加热涂膜和基板，并使涂膜中的半导体材料蒸发。

38. 发明授权

US5641606A Phase-change optical disks and processes for preparing the same 失效
标题翻译：相变光盘及其制备方法
公开(公告)号：US5641606A
公开(公告)日：1997-06-24
申请号：US513994
申请日：1995-09-05
申请人： Masaru Suzuki , Kazuhiro Nishimura
发明人： Masaru Suzuki , Kazuhiro Nishimura
IPC分类号： C23C14/06 , C23C14/34 , G11B7/0045 , G11B7/243 , G11B7/257 , G11B7/2578 , G11B7/26 , G11B7/24
CPC分类号： G11B7/257 , C23C14/0629 , C23C14/3414 , G11B7/243 , G11B7/26 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , G11B2007/24324 , G11B2007/25706 , G11B2007/2571 , G11B2007/25711 , G11B2007/25713 , G11B2007/25715 , G11B2007/25716 , G11B2007/25718 , G11B7/00454 , G11B7/2578 , Y10S430/146
摘要： The present invention relates to a phase-change type optical disk comprising a transparent substrate; a recording layer arranged on the transparent substrate wherein a phase-change occurs between crystalline state and amorphous state according to laser power irradiation; and protective layers arranged on and directly under the recording layer; the composition of the recording layer being represented by the general formula (Sb.sub.a Te.sub.b Ge.sub.c).sub.100-d .cndot.S.sub.d, wherein 5.ltoreq.a.ltoreq.60, 35.ltoreq.b.ltoreq.65, 5.ltoreq.c.ltoreq.65, a+b+c=100 and 0
摘要翻译： PCT No.PCT / JP94 / 01666 Sec。 371 1995年9月5日第 102（e）日期1995年9月5日PCT 1994年10月5日PCT PCT。公开号WO96 / 11471 日期：1996年04月18日本发明涉及一种包括透明基板的相变型光盘; 布置在所述透明基板上的记录层，其中根据激光功率照射在结晶状态和非晶状态之间发生相变; 和保护层布置在记录层的正下方; 记录层的组成由通式（SbaTebGec）100-d.Sd表示，其中5≤a≤60,35≤b= 65,5 / c = 65，a + b + c = 100和0

39. 发明授权

US5635245A Process of making abrasion wear resistant coated substrate product 失效
标题翻译：制造耐磨损涂层基材的工艺
公开(公告)号：US5635245A
公开(公告)日：1997-06-03
申请号：US588530
申请日：1996-01-18
申请人： Fred M. Kimock , Bradley J. Knapp , Steven J. Finke
发明人： Fred M. Kimock , Bradley J. Knapp , Steven J. Finke
IPC分类号： B32B17/06 , C03C17/06 , C03C17/34 , C03C17/36 , C23C14/02 , C23C14/06 , C23C14/08 , C23C14/10 , C23C14/18 , C23C16/02 , C23C16/26 , G02B1/10 , C23C16/00
CPC分类号： C03C17/3613 , B32B17/06 , C03C17/06 , C03C17/3417 , C03C17/3435 , C03C17/3441 , C03C17/3452 , C03C17/347 , C03C17/3476 , C03C17/36 , C03C17/3618 , C03C17/3621 , C03C17/3626 , C03C17/3628 , C03C17/3634 , C03C17/3642 , C23C14/02 , C23C14/021 , C23C14/024 , C23C14/025 , C23C14/06 , C23C14/0605 , C23C14/0629 , C23C14/0635 , C23C14/0641 , C23C14/0647 , C23C14/0676 , C23C14/08 , C23C14/081 , C23C14/082 , C23C14/083 , C23C14/086 , C23C14/10 , C23C14/18 , C23C16/0227 , C23C16/0272 , C23C16/0281 , C23C16/26 , G02B1/105 , C03C2217/734 , C03C2217/78 , Y10S427/103 , Y10S428/913 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate, one or more chemically vapor deposited interlayers bonded to the substrate and a chemically vapor deposited outer layer of optically transparent or substantially optically transparent hard and low friction material bonded to the interlayer and away from the substrate.
摘要翻译：涂覆的基材产品特别适用于眼镜和太阳镜，建筑玻璃，分析仪器窗，汽车挡风玻璃和激光条码扫描仪，用于零售商店和超市。该产品在严格的磨蚀环境中大大改善了耐磨性，并且包括基本上光学透明的基底，一个或多个结合到基底的化学气相沉积的中间层和化学气相沉积的光学透明或基本上光学透明的硬和低摩擦材料的外层，到中间层并远离基板。

40. 发明授权

US5427817A Process for manufacturing an auto-collimating scintillator and product produced thereby 失效
标题翻译：用于制造自动准直闪烁体的方法和由此产生的产品
公开(公告)号：US5427817A
公开(公告)日：1995-06-27
申请号：US148193
申请日：1993-11-02
申请人： Claude A. Goodman , Alan F. Lyon , Victor Perez-Mendez
发明人： Claude A. Goodman , Alan F. Lyon , Victor Perez-Mendez
IPC分类号： C09K11/62 , C23C14/06 , H01J9/22 , B05D5/06
CPC分类号： C09K11/628 , C23C14/0623 , C23C14/0629 , C23C14/0694 , H01J9/221
摘要： There is described a process for the vapor deposition of a scintillator phosphor composition with concomitant shadowing wherein the substrate to be processed is rotated through an arc relative to a vapor source of the scintillator phosphor composition whereby shadowing introduces voided gaps or interstices between columns as a result of the preferential components receiving more coating flux, particularly in the presence of oblique flux.
摘要翻译：描述了一种用于伴随着阴影的闪烁体荧光体组合物的气相沉积的方法，其中待处理衬底相对于闪烁体荧光体组合物的蒸气源旋转电弧，由此阴影引入柱之间的空隙或间隙，结果的优先组分接收更多的涂层焊剂，特别是在存在倾斜焊剂的情况下。

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