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31. 发明授权

US08578757B2 System for hydrogen sensing 有权
标题翻译：氢气检测系统
公开(公告)号：US08578757B2
公开(公告)日：2013-11-12
申请号：US12443297
申请日：2006-10-05
申请人： Fan Ren , Jenshan Lin , David Paul Norton , Stephen John Pearton
发明人： Fan Ren , Jenshan Lin , David Paul Norton , Stephen John Pearton
IPC分类号： G01N7/04 , G01N27/00
CPC分类号： G01N27/127 , G01N27/129 , G01N33/0073
摘要： Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit.
摘要翻译：示例性实施例提供了一种自供电无线气体传感器系统和使用该系统的气体感测方法。该系统可用于检测和不断跟踪包括氢气，臭氧和/或任何碳氢化合物气体在内的各种气体的存在，并远程传输感测信号。该系统可以包括消耗小于约30纳瓦功率的低功率气体传感器。因此，该系统可以检测约10ppm氢气的存在。传感器还可以提供约1-2秒的快速响应时间。在各种实施例中，系统可以物理上小，并且将所有部件组装成单个紧凑单元进行封装。

32. 发明申请

US20110137184A1 PRESSURE SENSING 审中-公开
标题翻译：压力传感器
公开(公告)号：US20110137184A1
公开(公告)日：2011-06-09
申请号：US13058700
申请日：2009-08-18
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： A61B5/021 , H01L29/778 , H01L29/205
CPC分类号： G01L9/0098 , A61B5/0031 , A61B5/0215 , A61B5/031 , A61B2562/0247
摘要： A high electron mobility transistor (HEMT) is disclosed capable of performing as a pressure sensor. In one embodiment, the subject pressure sensor can be used for the detection of body fluid pressure. A piezoelectric, biocompatible film can be used to provide a pressure sensing functionalized gate surface for the HEMT. Embodiments of the disclosed sensor can be integrated with a wireless transmitter for constant pressure monitoring.
摘要翻译：公开了能够作为压力传感器执行的高电子迁移率晶体管（HEMT）。在一个实施例中，本发明的压力传感器可用于检测体液压力。可以使用压电生物相容膜来为HEMT提供压力感测功能化的栅极表面。所公开的传感器的实施例可以与用于恒定压力监测的无线发射器集成。

33. 发明申请

US20110045600A1 OXYGEN AND CARBON DIOXIDE SENSING 失效
标题翻译：氧气和二氧化碳感测
公开(公告)号：US20110045600A1
公开(公告)日：2011-02-24
申请号：US12990377
申请日：2009-05-08
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： G01N33/50
CPC分类号： G01N33/004 , G01N27/4141 , Y10T436/20 , Y10T436/204998 , Y10T436/207497
摘要： A high electron mobility transistor (HEMT) capable of performing as a CO2 or O2 sensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.
摘要翻译：公开了能够作为CO 2或O 2传感器执行的高电子迁移率晶体管（HEMT）。在一个实施方案中，聚合物太阳能电池可以连接到用于红外检测系统的HEMT。在第二实施例中，可以在HEMT的栅极区域上提供选择性识别层。对于二氧化碳感测，在一个实例中，选择性识别层可以是PEI /淀粉。对于氧气感测，在一个示例中，选择性识别层可以是氧化铟锌（IZO）。在一个应用中，HEMT可用于检测呼出气或血液中的二氧化碳和氧气。

34. 发明授权

US5821171A Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article 失效
标题翻译：在GaAs系半导体上具有镓层的制品及其制造方法
公开(公告)号：US5821171A
公开(公告)日：1998-10-13
申请号：US408678
申请日：1995-03-22
申请人： Minghwei Hong , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Matthias Passlack , Fan Ren , George John Zydzik
发明人： Minghwei Hong , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Matthias Passlack , Fan Ren , George John Zydzik
IPC分类号： C23C14/08 , H01L29/51 , H01L31/04 , H01L33/44 , H01S5/00 , H01S5/028 , H01L21/316
CPC分类号： H01L29/517 , C23C14/08 , H01L33/44 , H01S5/028
摘要： A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (
摘要翻译：如果半导体表面在表面上的Ga 2 O 3的第一单层完成时具有小于单层杂质覆盖率的1％，则形成GaAs基半导体和Ga 2 O 3电介质之间的高质量界面。这通过例如通过在第一生长室中在UHV条件下制备GaAs晶片的表面来实现，将晶片通过UHV下的转移模块转移到也在UHV下的第二生长室，并通过蒸发使电介质生长的Ga 2 O 3来自固体源，所述方法进行，使得表面的综合杂质暴露量为至多100兰缪尔。根据本发明的制品具有低界面态密度（<1011 / cm2×Ve）和界面复合速度（<104cm / s）。根据本发明的半导体/ Ga 2 O 3结构可以有利地用于各种电子或光电子器件，例如GaAs基MOS-FET，HBT，太阳能电池上的激光器。

35. 发明授权

US5668049A Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur 失效
标题翻译：制造基于GaAs的激光器的方法，其包括具有气相硫的小面涂层
公开(公告)号：US5668049A
公开(公告)日：1997-09-16
申请号：US692834
申请日：1996-07-31
申请人： Utpal Kumar Chakrabarti , William Scott Hobson , Fan Ren , Melinda Lamont Schnoes
发明人： Utpal Kumar Chakrabarti , William Scott Hobson , Fan Ren , Melinda Lamont Schnoes
IPC分类号： H01L33/00 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/223 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0202 , H01S5/0282 , H01S5/223 , H01S5/34313
摘要： In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H.sub.2 S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e.g., 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power.
摘要翻译：在制造基于GaAs的半导体激光器的方法中，完全处理的晶片通常在环境气氛中被切割成激光棒，激光棒被装载到可抽空的沉积室（优选地是ECR CVD室）中并暴露于 H2S等离子体。暴露后，将裂解小面用保护电介质（优选氮化硅）层涂覆在腔室中。该方法可以通过高通量实现，并且可以产生能够在高功率下操作的激光器（例如，用于光纤放大器的980nm泵浦激光器）。

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