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31. 发明申请

US20050248232A1 Thin film piezoelectric resonator and manufacturing process thereof 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US20050248232A1
公开(公告)日：2005-11-10
申请号：US11115158
申请日：2005-04-27
申请人： Kazuhiko Itaya , Takashi Kawakubo , Kenya Sano , Ryoichi Ohara
发明人： Kazuhiko Itaya , Takashi Kawakubo , Kenya Sano , Ryoichi Ohara
IPC分类号： H01L41/09 , H01L41/04 , H01L41/08 , H01L41/18 , H01L41/22 , H01L41/23 , H01L41/29 , H01L41/332 , H03H3/02 , H03H9/17
CPC分类号： H03H3/02 , H03H9/174 , H03H2003/023
摘要： a thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.
摘要翻译：薄膜压电谐振器包括具有空腔的基板和位于基板上方且在空腔正上方的共振部分。谐振部分包括位于空腔侧面的下电极层，与下电极层相对的上电极层，以及位于上电极层和下电极层之间的压电薄膜。压电薄膜的一侧和下电极层的一侧位于公共平面中。

32. 发明授权

US6077406A Sputtering system 失效
标题翻译：溅射系统
公开(公告)号：US6077406A
公开(公告)日：2000-06-20
申请号：US292623
申请日：1999-04-16
申请人： Takashi Kawakubo , Kenya Sano , Ryoichi Ohara , Katsutaro Ichihara
发明人： Takashi Kawakubo , Kenya Sano , Ryoichi Ohara , Katsutaro Ichihara
IPC分类号： C23C14/22 , C23C14/34 , C23C14/35 , H01J37/34 , H01L21/203 , H01L39/24 , C23C14/00
CPC分类号： C23C14/225 , C23C14/3407 , C23C14/35 , H01J37/3405
摘要： A sputtering system comprises: a substrate holder for holding a substrate; and a cathode having a magnet therein and holding a target, the cathode being off-axis aligned with respect to the substrate. The cathode may comprise a plurality of cathodes, each of which has a flat backing plate, and two targets supported on both sides of the backing plate, the target being off-axis aligned with respect to the thin-film deposited surface of the substrate. The target may be supported on the side surface of a cylindrical or prismatic cathode body having a magnet therein, and the target being off-axis aligned with respect to the thin-film deposited surface of the substrate. Thus, if at least a part of the plurality of cathodes face the thin-film deposited surface of the substrate to be off-axis aligned, it is possible to enhance the inplane uniformity of film thickness, composition and crystallinity of a thin-film deposited on a substrate having a large diameter while inhibiting the substrate from being damaged by the irradiation with high energy particles, and to accelerate the thin film deposition rate.
摘要翻译：溅射系统包括：用于保持基板的基板保持器; 以及其中具有磁体并保持靶的阴极，阴极相对于衬底偏轴对准。阴极可以包括多个阴极，每个阴极具有平的背板，并且支撑在背板的两侧上的两个靶，靶相对于衬底的薄膜沉积表面离轴对准。靶可以被支撑在其中具有磁体的圆柱形或棱柱形阴极体的侧表面上，并且靶相对于衬底的薄膜沉积表面离轴对准。因此，如果多个阴极的至少一部分面对基板的薄膜沉积表面以使其离轴对准，则可以增强薄膜沉积的薄膜厚度，组成和结晶度的面内均匀性在具有大直径的基板上，同时抑制基板被高能粒子的照射损坏，并且加速薄膜沉积速率。

33. 发明申请

US20050006584A1 Method for manufacturing an infrared detection element 审中-公开
标题翻译：红外线检测元件的制造方法
公开(公告)号：US20050006584A1
公开(公告)日：2005-01-13
申请号：US10901110
申请日：2004-07-29
申请人： Takashi Kawakubo , Kazuhide Abe , Kenya Sano
发明人： Takashi Kawakubo , Kazuhide Abe , Kenya Sano
IPC分类号： G01J1/02 , G01J5/02 , G01J5/34 , H01L37/02 , G01J5/10 , H01L37/00
CPC分类号： H01L37/02
摘要： The present invention provides an infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 μm having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectioally oriented layer. Distortion of the single-crystalline layer or a unidirectioally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge is changed by changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5. The amount of the charge is detected from the first and the second electrode layer4, 6. With the infrared detection element, an accurate temperature measurement is possible even in the neighborhood of the Curie temperature due to a discontinuous primary phase transition.
摘要翻译：本发明提供一种红外线检测元件，其具有厚度为50nm〜10μm的具有主面的单晶基底层3，形成在单晶基底层3的主面上的第一电极层4，形成在第一电极层4上并由单晶层或单向取向层构成的铁电体层5。在与单晶基底层3的主表面平行的表面中的单晶层或单向取向层的失真由单晶基底层3弹性约束。红外线检测元件还具有第二电极层形成在铁电层5上的电荷量。由于红外光照射到铁电层5而引起的温度变化，电荷量被改变。从第一和第二电极层4,6检测电荷量。红外线检测元件，由于不连续的初级相变，即使在居里温度附近也可进行精确的温度测量。

34. 发明授权

US06797957B2 Infrared detection element and infrared detector 失效
标题翻译：红外探测元件和红外探测器
公开(公告)号：US06797957B2
公开(公告)日：2004-09-28
申请号：US10097405
申请日：2002-03-15
申请人： Takashi Kawakubo , Kazuhide Abe , Kenya Sano
发明人： Takashi Kawakubo , Kazuhide Abe , Kenya Sano
IPC分类号： H01L3702
CPC分类号： H01L37/02
摘要： An infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 &mgr;m having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectionally oriented layer. Distortion of the single-crystalline layer or a unidirectionally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge varies with changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5.
摘要翻译：具有厚度为50nm〜10μm的具有主面的单晶基底层3的红外线检测元件，形成在单晶基底层3的主面上的第一电极层4，强电介质层5 形成在第一电极层4上，由单晶层或单向取向层构成。在与单晶基底层3的主表面平行的表面中的单晶层或单向取向层的失真由单晶基底层3弹性约束。红外线检测元件还具有第二电极层形成在铁电层5上。电荷量随着红外光照射到铁电层5而引起的温度变化。

35. 发明授权

US5889299A Thin film capacitor 失效
标题翻译：薄膜电容器
公开(公告)号：US5889299A
公开(公告)日：1999-03-30
申请号：US804394
申请日：1997-02-21
申请人： Kazuhide Abe , Shuichi Komatsu , Mitsuaki Izuha , Noburu Fukushima , Kenya Sano , Takashi Kawakubo
发明人： Kazuhide Abe , Shuichi Komatsu , Mitsuaki Izuha , Noburu Fukushima , Kenya Sano , Takashi Kawakubo
IPC分类号： H01L21/02 , H01L29/76
CPC分类号： H01L28/55
摘要： A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.
摘要翻译：一种薄膜电容器，包括在其表面上具有立方体系的（100）面或四方晶系的（001）面的第一电极，在第一电极上外延生长并呈现出固有地属于立方体的钙钛矿结构，以及形成在电介质薄膜上的第二电极。此外，电介质薄膜满足以下关系V / V0 / = 1.01，其中属于立方体系的真实钙钛矿晶体结构的单位晶格体积（晶格常数a0）由V0 = a03表示，单位晶格体积晶格常数a = b NOTEQUAL c），其外延生长后由V = a2c表示为四方晶系，并满足以下关系c / a> / = 1.01其中c / a表示晶格常数在膜的厚度方向上的“c”和与膜的平面平行的方向上的晶格常数“a”。

36. 发明授权

US5739563A Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same 失效
标题翻译：具有钛酸钡型电介质膜的铁电型半导体器件及其制造方法
公开(公告)号：US5739563A
公开(公告)日：1998-04-14
申请号：US559945
申请日：1995-11-17
申请人： Takashi Kawakubo , Kenya Sano , Kazuhide Abe , Shuichi Komatsu , Noburu Fukushima , Kazuhiro Eguchi
发明人： Takashi Kawakubo , Kenya Sano , Kazuhide Abe , Shuichi Komatsu , Noburu Fukushima , Kazuhiro Eguchi
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/94 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.
摘要翻译：一种半导体存储器件，包括硅衬底，形成在硅衬底上的多个开关晶体管，具有开口并形成在形成有多个开关晶体管的硅衬底的表面部分上的绝缘层，以及多个用于累积形成在绝缘层上的电荷，并且经由埋在绝缘层开口中的导电膜分别连接到开关晶体管，其中用于积累电荷的每个电容器设置有形成在绝缘层上的下面的晶体层，基本上由铁电材料构成并在下面的晶体层上生长的外延或取向的电介质膜，并且用于积累彼此连接的电荷的开关晶体管和电容器构成以二维图案布置的多个存储单元。

37. 发明授权

US08866151B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08866151B2
公开(公告)日：2014-10-21
申请号：US13425246
申请日：2012-03-20
申请人： Takao Noda , Ryoichi Ohara , Kenya Sano , Toru Sugiyama
发明人： Takao Noda , Ryoichi Ohara , Kenya Sano , Toru Sugiyama
IPC分类号： H01L29/161 , H01L29/47 , H01L29/872 , H01L29/66 , H01L29/16 , H01L29/20 , H01L29/43 , H01L29/06 , H01L21/04
CPC分类号： H01L29/1608 , H01L21/0465 , H01L29/0619 , H01L29/0692 , H01L29/2003 , H01L29/43 , H01L29/6606 , H01L29/872
摘要： According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的半导体层，选择性地设置在半导体层的第一主表面中的第二导电类型的第一区域，第二导电类型的第二区域选择性地设置在第一主表面并连接到第一区域，与半导体层和第一区域接触设置的第一电极，与第二区域接触的第二电极和与半导体的第二主表面电连接的第三电极层与第一主表面相对。

38. 发明申请

US20120241762A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120241762A1
公开(公告)日：2012-09-27
申请号：US13425246
申请日：2012-03-20
申请人： Takao NODA , Ryoichi Ohara , Kenya Sano , Toru Sugiyama
发明人： Takao NODA , Ryoichi Ohara , Kenya Sano , Toru Sugiyama
IPC分类号： H01L29/161 , H01L29/47
CPC分类号： H01L29/1608 , H01L21/0465 , H01L29/0619 , H01L29/0692 , H01L29/2003 , H01L29/43 , H01L29/6606 , H01L29/872
摘要： According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的半导体层，选择性地设置在半导体层的第一主表面中的第二导电类型的第一区域，第二导电类型的第二区域选择性地设置在第一主表面并连接到第一区域，与半导体层和第一区域接触设置的第一电极，与第二区域接触的第二电极和与半导体的第二主表面电连接的第三电极层与第一主表面相对。

39. 发明授权

US5682041A Electronic part incorporating artificial super lattice 失效
标题翻译：电子部件采用人造超晶格
公开(公告)号：US5682041A
公开(公告)日：1997-10-28
申请号：US651661
申请日：1996-05-21
申请人： Takashi Kawakubo , Hideo Hirayama , Kenya Sano , Michihiro Oose , Junsei Tsutsumi
发明人： Takashi Kawakubo , Hideo Hirayama , Kenya Sano , Michihiro Oose , Junsei Tsutsumi
IPC分类号： H01L29/15 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66 , H01L29/737 , H01L29/76 , H01L29/88 , H01L45/00 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L29/155 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66977 , H01L29/7376 , H01L29/7606 , H01L29/882 , H01L45/00
摘要： An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect. The artificial super lattice possesses a barrier layer formed of an insulating substance and an electrode layer formed of a substance of good conductivity and disposed in contact with the barrier layers.
摘要翻译：公开了一种电子部件，其具有通过将选自属于3A〜6A族的过渡元素的元素和稀土元素之间的化合物形成的具有良好导电性的物质交替重叠的人造超晶格和选自硼，碳，氮，磷，硒和碲中的元素，或选自7A和8族的元素的氧和过渡金属元素之间的化合物，以及由简单金属选自属于组1A，组2A和组1B至4B的元素和选自碳，氮，氧，磷，硫，硒，碲和卤素元素的元素，其厚度适合于获得量子尺寸影响。人造超晶格具有由绝缘物质形成的阻挡层和由导电性良好的物质形成并与阻挡层接触的电极层。

40. 发明授权

US07321183B2 Film bulk acoustic resonator and method for manufacturing the same 失效
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07321183B2
公开(公告)日：2008-01-22
申请号：US10890989
申请日：2004-07-15
申请人： Yasuo Ebuchi , Takako Motai , Kenya Sano
发明人： Yasuo Ebuchi , Takako Motai , Kenya Sano
IPC分类号： H01L41/053 , H01L41/083
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02125 , H03H9/02133 , H03H9/173 , H03H9/587
摘要： A film bulk acoustic resonator, includes first to fourth insulator patterns disposed apart from each other. The third and fourth insulator patterns are disposed opposite the second and first insulator patterns in relation to the first and second insulating patterns, respectively. A bottom conductive layer is disposed above the first and third insulator patterns spreading from a region between the first and second insulator patterns to the third insulator pattern. A piezoelectric film is provided on the bottom conductive layer, disposed above the region between the first and second insulating patterns. A top conductive layer is facing the bottom conductive layer so as to sandwich the piezoelectric film, spreading from the region between the first and second insulator patterns to the fourth insulator pattern.
摘要翻译：薄膜体声波谐振器包括彼此分开布置的第一至第四绝缘体图案。第三绝缘体图案和第四绝缘体图案分别相对于第一和第二绝缘图案与第二和第一绝缘体图案相对设置。底部导电层设置在从第一和第二绝缘体图案之间的区域延伸到第三绝缘体图案的第一和第三绝缘体图案之上。在底部导电层上设置压电薄膜，设置在第一和第二绝缘图案之间的区域之上。顶部导电层面向底部导电层，以夹持压电膜，从第一和第二绝缘体图案之间的区域延伸到第四绝缘体图案。

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