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1. 发明授权

US6077406A Sputtering system 失效
标题翻译：溅射系统
公开(公告)号：US6077406A
公开(公告)日：2000-06-20
申请号：US292623
申请日：1999-04-16
申请人： Takashi Kawakubo , Kenya Sano , Ryoichi Ohara , Katsutaro Ichihara
发明人： Takashi Kawakubo , Kenya Sano , Ryoichi Ohara , Katsutaro Ichihara
IPC分类号： C23C14/22 , C23C14/34 , C23C14/35 , H01J37/34 , H01L21/203 , H01L39/24 , C23C14/00
CPC分类号： C23C14/225 , C23C14/3407 , C23C14/35 , H01J37/3405
摘要： A sputtering system comprises: a substrate holder for holding a substrate; and a cathode having a magnet therein and holding a target, the cathode being off-axis aligned with respect to the substrate. The cathode may comprise a plurality of cathodes, each of which has a flat backing plate, and two targets supported on both sides of the backing plate, the target being off-axis aligned with respect to the thin-film deposited surface of the substrate. The target may be supported on the side surface of a cylindrical or prismatic cathode body having a magnet therein, and the target being off-axis aligned with respect to the thin-film deposited surface of the substrate. Thus, if at least a part of the plurality of cathodes face the thin-film deposited surface of the substrate to be off-axis aligned, it is possible to enhance the inplane uniformity of film thickness, composition and crystallinity of a thin-film deposited on a substrate having a large diameter while inhibiting the substrate from being damaged by the irradiation with high energy particles, and to accelerate the thin film deposition rate.
摘要翻译：溅射系统包括：用于保持基板的基板保持器; 以及其中具有磁体并保持靶的阴极，阴极相对于衬底偏轴对准。阴极可以包括多个阴极，每个阴极具有平的背板，并且支撑在背板的两侧上的两个靶，靶相对于衬底的薄膜沉积表面离轴对准。靶可以被支撑在其中具有磁体的圆柱形或棱柱形阴极体的侧表面上，并且靶相对于衬底的薄膜沉积表面离轴对准。因此，如果多个阴极的至少一部分面对基板的薄膜沉积表面以使其离轴对准，则可以增强薄膜沉积的薄膜厚度，组成和结晶度的面内均匀性在具有大直径的基板上，同时抑制基板被高能粒子的照射损坏，并且加速薄膜沉积速率。

2. 发明授权

US07770274B2 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07770274B2
公开(公告)日：2010-08-10
申请号：US11946910
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H04R17/00
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

3. 发明授权

US07675222B2 Thin film piezoelectric actuator 失效
标题翻译：薄膜压电致动器
公开(公告)号：US07675222B2
公开(公告)日：2010-03-09
申请号：US11781667
申请日：2007-07-23
申请人： Takashi Kawakubo , Ryoichi Ohara , Tomio Ono , Toshihiko Nagano , Michihiko Nishigaki , Takaaki Yasumoto , Kazuhide Abe , Kenya Sano
发明人： Takashi Kawakubo , Ryoichi Ohara , Tomio Ono , Toshihiko Nagano , Michihiko Nishigaki , Takaaki Yasumoto , Kazuhide Abe , Kenya Sano
IPC分类号： H01L41/08
CPC分类号： H01G7/06 , H01H2057/006 , H01L41/0933 , H01L41/094
摘要： A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.
摘要翻译：薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

4. 发明授权

US07498904B2 Piezoelectric thin film resonator and devices provided with the same 失效
标题翻译：压电薄膜谐振器及其设备
公开(公告)号：US07498904B2
公开(公告)日：2009-03-03
申请号：US11447999
申请日：2006-06-07
申请人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H03H9/00
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/02157 , H03H9/13 , H03H9/174 , H03H2003/023
摘要： A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.
摘要翻译：压电薄膜谐振器包括其中形成腔的衬底，具有第一电极边缘并且部分跨越衬底上的空腔的第一电极; 设置在第一电极上的压电层，具有第二电极边缘并放置在压电层上的第二电极，由第一电极，压电层，第二电极和空腔的重叠部分构成的谐振器单元; 以及与第二电极成一体的第二引线，延伸到不存在空腔的基板，并且具有大于第二电极边缘延伸的空腔的周长的一部分的宽度。在压电薄膜谐振器中，由谐振器单元的第一电极的周边限定的第一长度大于由谐振器单元的第二电极边缘限定的第二长度。

5. 发明申请

US20080072408A1 PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：压电薄膜装置及其制造方法
公开(公告)号：US20080072408A1
公开(公告)日：2008-03-27
申请号：US11946910
申请日：2007-11-29
申请人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/22 , H04R31/00 , H05K3/10
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

6. 发明申请

US20050059375A1 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US20050059375A1
公开(公告)日：2005-03-17
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H03K3/354 , H03B1/00 , H03B5/30 , H03B5/32 , H03H9/17 , H03L7/08 , H03L7/089 , H03L7/099 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/187 , H03L7/199 , H04B1/06 , H04B7/00 , H04B17/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始周期期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

7. 发明授权

US07268647B2 Film bulk acoustic-wave resonator and method for manufacturing the same 失效
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07268647B2
公开(公告)日：2007-09-11
申请号：US11626270
申请日：2007-01-23
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/15 , H03H9/13 , H03H3/02 , H03H9/54
CPC分类号： H03H3/02 , H03H9/173 , H03H9/174 , H03H9/605 , Y10T29/42
摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.
摘要翻译：一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线在平面视图外的轮廓外。

8. 发明申请

US20070115078A1 FILM BULK ACOUSTIC-WAVE RESONATOR AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：薄膜波纹声波谐振器及其制造方法
公开(公告)号：US20070115078A1
公开(公告)日：2007-05-24
申请号：US11626270
申请日：2007-01-23
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/54
CPC分类号： H03H3/02 , H03H9/173 , H03H9/174 , H03H9/605 , Y10T29/42
摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.
摘要翻译：一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线在平面视图外的轮廓外。

9. 发明授权

US07187253B2 Film bulk acoustic-wave resonator and method for manufacturing the same 失效
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07187253B2
公开(公告)日：2007-03-06
申请号：US11108671
申请日：2005-04-19
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/54 , H03H3/02
CPC分类号： H03H3/02 , H03H9/173 , H03H9/174 , H03H9/605 , Y10T29/42
摘要： A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.
摘要翻译：薄膜体声波谐振器包括（a）具有空腔的基板，（b）部分地固定到基板的底部电极，底部电极的一部分机械地悬挂在空腔上方，（c）压电层，底部电极，压电层的平面形状由在平面图中覆盖底部电极的整个表面的轮廓限定，（d）压电层上的顶部电极，（e）中间电极，位于衬底和压电层，并且在压电层的轮廓处，中间电极在轮廓的内部连接到底部电极，（f）连接到从轮廓延伸到中间电极的底部电极配线在平面图的轮廓外侧，利用沿着压电体层的厚度方向的纵向振动模式。

10. 发明授权

US07501739B2 Thin film piezoelectric resonator and manufacturing process thereof 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US07501739B2
公开(公告)日：2009-03-10
申请号：US11115158
申请日：2005-04-27
申请人： Kazuhiko Itaya , Takashi Kawakubo , Kenya Sano , Ryoichi Ohara
发明人： Kazuhiko Itaya , Takashi Kawakubo , Kenya Sano , Ryoichi Ohara
IPC分类号： H01L41/08
CPC分类号： H03H3/02 , H03H9/174 , H03H2003/023
摘要： A thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.
摘要翻译：薄膜压电谐振器包括具有空腔的基板和位于基板上方且在空腔正上方的谐振部分。谐振部分包括位于空腔侧面的下电极层，与下电极层相对的上电极层，以及位于上电极层和下电极层之间的压电薄膜。压电薄膜的一侧和下电极层的一侧位于公共平面中。

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