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1. 发明授权

US09887298B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US09887298B2
公开(公告)日：2018-02-06
申请号：US14964950
申请日：2015-12-10
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki
IPC分类号： H01L29/49 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/22 , H01L29/221 , H01L29/24 , H01L29/66 , H01L29/26 , H01L29/423 , H01L29/45
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/04 , H01L29/045 , H01L29/2206 , H01L29/221 , H01L29/24 , H01L29/263 , H01L29/42356 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78693 , H01L29/78696
摘要： An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.

2. 发明授权

US09428691B2 Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer 有权
标题翻译：具有纳米晶核和纳米晶壳的半导体结构与组成过渡层配对
公开(公告)号：US09428691B2
公开(公告)日：2016-08-30
申请号：US14967162
申请日：2015-12-11
申请人： Pacific Light Technologies Corp.
发明人： Juanita N. Kurtin
IPC分类号： H01L29/06 , H01L31/00 , C09K11/88 , H01L29/12 , H01L29/221 , H01L33/50 , C09K11/02 , B82Y10/00 , H01L33/06 , B82Y20/00
CPC分类号： C09K11/883 , B82Y10/00 , B82Y20/00 , C09K11/025 , H01L29/0665 , H01L29/127 , H01L29/221 , H01L33/06 , H01L33/502
摘要： Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing with compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials. In the examples, an insulator coating surrounds and encapsulates the structure.
摘要翻译：描述了具有与组成过渡层配对的纳米晶核和纳米晶壳的半导体结构。在一个示例中，半导体结构包括由第一半导体材料构成的纳米晶核。由第二半导体材料构成的纳米晶体壳围绕纳米晶核。组成过渡层设置在纳米晶核和纳米晶体壳之间并与之接触，并且具有中间到第一和第二半导体材料的组成。在另一示例中，半导体结构包括由第一半导体材料构成的纳米晶核。由第二半导体材料构成的纳米晶体壳围绕纳米晶核。纳米晶体外壳围绕纳米晶体壳并由第三半导体材料组成。组成过渡层设置在纳米晶体壳和纳米晶体外壳之间并与之接触，并且具有中间到第二和第三半导体材料的组成。在实施例中，绝缘体涂层围绕并封装结构。

3. 发明申请

US20150122315A1 TWO-DIMENSIONAL MATERIALS, METHODS OF FORMING THE SAME, AND DEVICES INCLUDING TWO-DIMENSIONAL MATERIALS 有权
标题翻译：二维材料，其形成方法和包括二维材料的装置
公开(公告)号：US20150122315A1
公开(公告)日：2015-05-07
申请号：US14508378
申请日：2014-10-07
申请人： Samsung Electronics Co., Ltd.
发明人： Hyeonjin SHIN , Seongjun PARK , Jaeho LEE , Jinseong HEO
IPC分类号： H01L29/06 , H01L31/032 , H01L31/0352 , H01L31/109 , H01L29/737 , H01L29/66 , H01L29/78 , H01L29/861 , H01L29/74 , H01L29/792 , C01B19/04 , C01G41/00 , C01G39/06 , C01G25/00 , C01G27/00 , H01L29/24
CPC分类号： H01L29/0665 , C01B19/04 , C01G25/00 , C01G27/00 , C01G39/06 , C01G41/00 , C01P2004/20 , C01P2006/40 , H01L29/0673 , H01L29/1033 , H01L29/22 , H01L29/221 , H01L29/24 , H01L29/66977 , H01L29/73 , H01L29/7317 , H01L29/737 , H01L29/74 , H01L29/778 , H01L29/78 , H01L29/792 , H01L29/861 , H01L29/8611 , H01L31/032 , H01L31/0322 , H01L31/0324 , H01L31/035281 , H01L31/109 , Y10T428/24802
摘要： According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.
摘要翻译：根据示例实施例，二维（2D）材料元件可以包括彼此化学键合的第一2D材料和第二2D材料。第一2D材料可以包括基于硫族化物的第一金属材料。第二2D材料可以包括第二金属硫族化物基材料。第二2D材料可以结合到第一2D材料的一侧。 2D材料元件可以具有PN结结构。 2D材料元件可以包括具有不同带隙的多个2D材料。

4. 发明授权

US09000417B1 Random access memory cells using spatial wavefunction switched field-effect transistors 有权
标题翻译：使用空间波函数切换场效应晶体管的随机存取存储单元
公开(公告)号：US09000417B1
公开(公告)日：2015-04-07
申请号：US13960237
申请日：2013-08-06
申请人： Faquir Chand Jain
发明人： Pawan Gogna , Faquir Chand Jain , John Chandy , Evan Heller
IPC分类号： H01L27/092 , H01L29/78 , H01L27/11 , H01L27/108 , H01L29/10 , H01L29/15 , H01L29/205
CPC分类号： H01L27/1108 , H01L27/108 , H01L27/10873 , H01L29/0843 , H01L29/1054 , H01L29/205 , H01L29/221 , H01L29/267 , H01L29/7782 , H01L29/78681 , H01L29/78684 , H01L29/78696
摘要： Multi-source/drain Spatial Wavefunction Switched (SWS) field-effect transistors (FETs) are configured to serve as 1-bit and 2-bit static random access memory (SRAM) and dynamic random access memory (DRAM) cells. The SWS-FET transport channel comprises of multiple asymmetric coupled wells which are contacted via more than one sources and drains.
摘要翻译：多源/漏极空间功能开关（SWS）场效应晶体管（FET）被配置为1位和2位静态随机存取存储器（SRAM）和动态随机存取存储器（DRAM）单元。 SWS-FET传输通道包括多个不对称耦合阱，其通过多于一个源和漏极接触。

5. 发明申请

US20140252344A1 P-TYPE OXIDE COMPOSITION, AND METHOD FOR PRODUCING P-TYPE OXIDE COMPOSITION 有权
标题翻译： P型氧化物组合物，以及生产P型氧化物组合物的方法
公开(公告)号：US20140252344A1
公开(公告)日：2014-09-11
申请号：US14192054
申请日：2014-02-27
申请人： Satomi Sabu , Kenkichiro Kobayashi
发明人： Satomi Sabu , Kenkichiro Kobayashi
IPC分类号： H01L21/02 , H01L29/221
CPC分类号： H01L21/02554 , H01L21/0237 , H01L21/0242 , H01L21/02472 , H01L21/02483 , H01L21/02557 , H01L21/02579 , H01L21/02631 , H01L29/221 , H01L29/861
摘要： To provide an oxide composition, represented by: ZnO1-xSx+a (0 0), where part of O sites of ZnO is substituted with an S atom, and another S atom is provided to an interstitial site by doping, and wherein the oxide composition is p-type.
摘要翻译：为了提供由ZnO1-xSx + a（0 0）表示的氧化物组合物，其中ZnO的一部分O位被S原子取代，另一个S原子被提供给间隙位置并且其中氧化物组合物是p型。

6. 发明授权

US08779420B2 Semiconductor device 有权
公开(公告)号：US08779420B2
公开(公告)日：2014-07-15
申请号：US13684290
申请日：2012-11-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/04 , H01L29/045 , H01L29/2206 , H01L29/221 , H01L29/24 , H01L29/263 , H01L29/42356 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78693 , H01L29/78696
摘要： An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.

7. 发明授权

US5786269A II-VI group compound semiconductor device and method for manufacturing the same 失效
标题翻译： II-VI族化合物半导体器件及其制造方法
公开(公告)号：US5786269A
公开(公告)日：1998-07-28
申请号：US719263
申请日：1996-09-24
申请人： Masanori Murakami , Yasuo Koide , Nobuaki Teraguchi , Yoshitaka Tomomura
发明人： Masanori Murakami , Yasuo Koide , Nobuaki Teraguchi , Yoshitaka Tomomura
IPC分类号： H01L29/43 , H01L21/28 , H01L21/4763 , H01L29/221 , H01L29/45 , H01L33/28 , H01L33/30 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/30 , H01S5/327
CPC分类号： H01L33/40 , H01L21/4763 , H01L29/221 , H01L29/45 , H01S5/0421 , H01S5/327 , H01L33/28 , H01S2304/02 , H01S5/0425 , H01S5/3059
摘要： A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.
摘要翻译：具有p型ZnxMg1-xSySe1-y（0≤x≤1,0≤y≤1）半导体层的II-VI族化合物半导体器件，其上形成有电极层，至少金属氮化物层位于半导体层和电极层之间。

8. 发明授权

US4435224A Process for preparing homogeneous layers of composition Hg.sub.1-x Cd.sub.x 失效
标题翻译：制备均质层组成的方法Hg1-xCdxTe的方法
公开(公告)号：US4435224A
公开(公告)日：1984-03-06
申请号：US234753
申请日：1981-02-17
申请人： Alain Durand
发明人： Alain Durand
IPC分类号： C01B19/04 , C30B11/00 , C30B19/00 , C30B23/02 , C30B29/48 , H01L21/363 , H01L21/365 , H01L29/221 , H01L31/0296 , H01L31/18 , H01L21/205 , H01L21/324
CPC分类号： H01L31/1832 , C30B11/00 , C30B19/00 , C30B23/02 , C30B29/48 , C30B29/60 , H01L21/02411 , H01L21/0248 , H01L21/0251 , H01L21/02562 , H01L21/02667 , H01L29/221 , H01L31/02966
摘要： Process for obtaining a homogeneous layer of composition Hg.sub.1-x Cd.sub.x Te, comprising the steps of:subjecting a wafer formed by a layer of Hg.sub.1-x.sbsb.o Cd.sub.x.sbsb.o Te deposited by epitaxial growth on a CdTe substrate, x.sub.o being less than the desired value x, to a melting treatment,then rapidly cooling the wafer.
摘要翻译：用于获得组合物Hg1-xCdxTe的均匀层的方法，包括以下步骤：将由外延生长沉积的Hg1-xCdxoTe层形成的晶片在小于期望值x的CdTe衬底上经受熔融处理，然后快速冷却晶片。

9. 发明授权

US4128467A Method of ion etching Cd-Hg-Te semiconductors 失效
标题翻译：离子蚀刻方法Cd-Hg-Te半导体
公开(公告)号：US4128467A
公开(公告)日：1978-12-05
申请号：US881007
申请日：1978-02-24
申请人： Konrad Fischer
发明人： Konrad Fischer
IPC分类号： H01L21/423 , H01L29/221 , C23C15/00
CPC分类号： H01L29/221 , H01L21/423
摘要： A method of etching comprises etching a cadmium-mercury-telluride semiconductor layer by means of an ion beam.
摘要翻译：蚀刻方法包括通过离子束蚀刻镉 - 汞 - 碲化物半导体层。

10. 发明授权

US4003759A Ion implantation of gold in mercury cadmium telluride 失效
标题翻译：金离子注入汞碲化镉
公开(公告)号：US4003759A
公开(公告)日：1977-01-18
申请号：US662293
申请日：1976-03-01
申请人： Toivo Koehler
发明人： Toivo Koehler
IPC分类号： H01L21/425 , H01L29/221 , H01L21/265
CPC分类号： H01L21/425 , H01L29/221
摘要： PN junctions in mercury cadmium telluride are formed by implantation of gold ions and a subsequent low temperature--short duration heat treatment.
摘要翻译：通过植入金离子和随后的低温短时热处理形成汞镉碲的PN结。

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