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31. 发明授权

US6107562A Semiconductor thin film, method for manufacturing the same, and solar cell using the same 有权
标题翻译：半导体薄膜及其制造方法以及使用其的太阳能电池
公开(公告)号：US6107562A
公开(公告)日：2000-08-22
申请号：US271782
申请日：1999-03-18
申请人： Yasuhiro Hashimoto , Takayuki Negami , Shigeo Hayashi , Takahiro Wada
发明人： Yasuhiro Hashimoto , Takayuki Negami , Shigeo Hayashi , Takahiro Wada
IPC分类号： H01L31/0264 , H01L31/0328 , H01L31/0392 , H01L31/04 , H01L31/042 , H01L31/0749 , H01L31/18 , H01L31/06
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/0328 , Y02E10/541 , Y10T428/12528
摘要： A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.
摘要翻译：半导体薄膜包括由Ib，IIIb，VIb和II族组成的至少一种元素的n型化合物半导体层。使用这种半导体薄膜的太阳能电池包括基板和后电极，p型化合物半导体层，n型化合物半导体层，n型半导体层，窗口层和透明导电膜，形成按顺序在基板上。包含Ib，IIIb，VIb和II族中的至少一种元素的n型化合物半导体层具有高载流子密度。

32. 发明授权

US5918111A Method and apparatus for manufacturing chalcopyrite semiconductor thin films 失效
公开(公告)号：US5918111A
公开(公告)日：1999-06-29
申请号：US613497
申请日：1996-03-11
申请人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
发明人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
IPC分类号： C23C14/06 , C23C14/54 , C30B23/02 , H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , C23C14/0623 , C23C14/541 , C30B23/002 , C30B23/02 , C30B29/46 , Y02E10/541
摘要： The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.

33. 发明授权

US5617523A Waveform display apparatus for easily realizing high-definition waveform observation 失效
标题翻译：波形显示装置，用于轻松实现高清晰度波形观察
公开(公告)号：US5617523A
公开(公告)日：1997-04-01
申请号：US385556
申请日：1995-02-08
申请人： Yoshifumi Imazu , Takahiro Wada
发明人： Yoshifumi Imazu , Takahiro Wada
IPC分类号： G01R13/34 , G01R23/16 , G01R23/163 , G01R23/173 , G01R27/32 , G06T3/00
CPC分类号： G01R13/345 , G01R23/16 , G01R23/163 , G01R23/173 , G01R27/32
摘要： A measurement unit U100 measures an input signal to be measured by sweeping frequencies in a measurement range having a predetermined frequency band so as to obtain waveform data to be developed on the frequency axis such as spectrum data in, e.g., a spectrum analyzer. The waveform data obtained by the measurement of the measurement unit U100 is displayed by a display device 500 via a display data processor U20 included in a control unit U200 to be described later to be developed on the frequency axis of the display device, i.e., in correspondence with the measurement frequencies. The control unit U200 includes a measurement controller U30 for controlling the measurement unit U100 so as to display waveform data obtained by enlarging or reducing waveform data, before a measurement frequency condition is changed, at a predetermined magnification to have a predetermined point on the frequency axis as the center on the basis of a change in measurement frequency condition set by a condition setting unit U900, and an enlargement display/stable display processor U40 for controlling the display data processor U20. The enlargement display/stable display processor U40 realizes high-definition waveform observation as the gist of this invention, and substantially has a function of controlling the display device U500 as the control unit U200.
摘要翻译：测量单元U100通过在具有预定频带的测量范围内的频率扫描来测量要测量的输入信号，以获得在频率轴上显影的波形数据，例如频谱分析仪中的频谱数据。通过测量单元U100的测量获得的波形数据由显示装置500经由包括在稍后描述的控制单元U200中的显示数据处理器U20显示在显示装置的频率轴上，即在与测量频率的对应关系。控制单元U200包括用于控制测量单元U100的测量控制器U30，以便在测量频率条件改变之前以预定的倍率显示通过放大或缩小波形数据而获得的波形数据，以在频率轴上具有预定点作为基于由条件设置单元U900设置的测量频率条件的改变的中心，以及用于控制显示数据处理器U20的放大显示/稳定显示处理器U40。放大显示/稳定显示处理器U40实现高清晰度波形观察作为本发明的要点，并且基本上具有控制显示装置U500作为控制单元U200的功能。

34. 发明授权

US5468724A High temperature oxide superconductor 失效
标题翻译：高温氧化物超导体
公开(公告)号：US5468724A
公开(公告)日：1995-11-21
申请号：US68587
申请日：1993-05-27
申请人： Takahiro Wada , Shin-ichi Koriyama , Takeshi Sakurai , Nobuo Suzuki , Takayuki Miyatake , Hisao Yamauchi , Naoki Koshizuka , Shoji Tanaka
发明人： Takahiro Wada , Shin-ichi Koriyama , Takeshi Sakurai , Nobuo Suzuki , Takayuki Miyatake , Hisao Yamauchi , Naoki Koshizuka , Shoji Tanaka
IPC分类号： C01G3/00 , C04B35/45 , H01L39/12 , H01B12/00
CPC分类号： C01G3/006 , C04B35/4504 , H01L39/126 , C01P2002/72 , C01P2002/77 , C01P2002/88 , C01P2004/80 , C01P2006/14 , Y10S505/779 , Y10S505/78
摘要： Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.
摘要翻译：本文公开了RBa2Cu4O8型的高温氧化物超导体，其中Ba部分被Sr或Ca取代，或者R和Ba分别被Ca和Sr部分替代，如R（Ba1-ySry）2Cu4O8的化学组成式所示或R（Ba1-zCaz）2 Cu4O8或（R1-xCax）（Ba1-ySry）2Cu4O8。它们在高温下表现出超导性。特别地，最后一个在比前两个更高的温度下表现出超导性。所有这些都可以用少量的Ba作为有害物质，前两种具有改善的烧结性。通过在惰性气体和氧气组成的气氛中，在850〜-1100℃的原料混合物进行热静水压处理的方法制造时，得到最好的结果。该过程允许更广泛地选择Ba原料。

35. 发明授权

US5389572A Process of making chalcopyrite structure semiconductor film 失效
标题翻译：制造黄铜矿结构半导体膜的工艺
公开(公告)号：US5389572A
公开(公告)日：1995-02-14
申请号：US195948
申请日：1994-02-14
申请人： Takayuki Negami , Mikihiko Nishitani , Shigemi Kohiki , Takahiro Wada
发明人： Takayuki Negami , Mikihiko Nishitani , Shigemi Kohiki , Takahiro Wada
IPC分类号： H01L21/363 , H01L31/032 , H01L31/04 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01L21/22
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521 , Y10S148/153 , Y10S438/93
摘要： A I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled.
摘要翻译：提供了含有VII族元素作为掺杂剂的I-III-VI2黄铜矿半导体膜，以及制造这种黄铜矿膜的方法。本发明的黄铜矿膜具有化学计量组成，并且控制诸如p-n导电型，载流子浓度等的电特性。

36. 发明授权

US4672178A Reduced pressure heat storage element and electric heater using the same 失效
标题翻译：减压蓄热元件和使用其的电加热器
公开(公告)号：US4672178A
公开(公告)日：1987-06-09
申请号：US746195
申请日：1985-06-18
申请人： Takahiro Wada , Yoneno Hiroshi
发明人： Takahiro Wada , Yoneno Hiroshi
IPC分类号： C09K5/00 , C09K5/08 , F28D20/02 , F24J3/00
CPC分类号： F28D20/02 , Y02E60/145
摘要： The present invention relates to a heat storage element having a latent heat storage material sealed in the container under a reduced pressure. This heat storage element permits effective reduction of air in the heat storage element, and therefore, heat is smoothly transferred from outside to the latent heat storage material through the wall of the container. Accordingly, a heat storage element which has a very high heat storage characteristic is realized. Furthermore, this heat storage element, having almost no air sealed in, has a large heat storage density. When this heat storage element is used in combination with an electric heater element, heat will be uniformly transferred from the electric heater element to the latent heat storage material, involving a very small risk of part of the electric heater element being overheated.
摘要翻译：本发明涉及具有在减压下密封在容器中的潜热蓄热材料的储热元件。该蓄热元件允许有效地减少蓄热元件中的空气，因此，热量通过容器的壁从外部平滑地转移到潜热蓄热材料。因此，实现了具有非常高的蓄热特性的蓄热元件。此外，几乎没有空气密封的这种蓄热元件具有大的蓄热密度。当这种蓄热元件与电加热器元件组合使用时，热量将从电加热器元件均匀地传递到潜热储存材料，涉及电加热器元件的一部分过热的风险很小。

37. 发明授权

US07888178B2 Method to produce reflector with an outer peripheral edge portion of an upper surface uncovered by a reflection film and to produce a lightemitting device using the same reflector 有权
标题翻译：制造反射器的方法，其具有未被反射膜覆盖的上表面的外周边缘部分并且产生使用相同反射器的发光器件
公开(公告)号：US07888178B2
公开(公告)日：2011-02-15
申请号：US12014568
申请日：2008-01-15
申请人： Takahiro Wada , Satoru Kikuchi
发明人： Takahiro Wada , Satoru Kikuchi
IPC分类号： H01L21/48
CPC分类号： H01L33/60 , G02B5/08 , H01L2224/48091 , H01L2924/00014
摘要： An LED includes a circuit board (1), a light emitter (3) mounted on the circuit board (1), and a reflector (4) mounted on the circuit board (1), the light emitter (3) including an LED element mounted on the circuit board (1) and a light-transmitting resin (2) to seal the LED element. The reflector (4) is configured to surround the light emitter (3) and includes an opening (5) which passes through an upper surface and a lower surface is provided at a central position to allow insertion of the light emitter (3), and an inclined inner surface in the opening (6) configured to be upwardly broadened. A reflection film (7) is provided on the inclined inner surface (6) of the opening in the reflector. A outer peripheral edge is a non-reflection film constituted area (8) and, simultaneously, a terminal position identification mark (10) adjacent to the non-reflection film constituted area (8) are provided. The reflector (4) is cut along a dicing line on the non-reflection film constituted area (8) where the reflection film is not provided, thus preventing the reflection film (7) from being peeled off.
摘要翻译： LED包括电路板（1），安装在电路板（1）上的发光体（3）和安装在电路板（1）上的反射器（4），所述发光体（3）包括LED元件安装在电路板（1）和透光树脂（2）上以密封LED元件。反射器（4）被配置为围绕光发射器（3）并且包括通过上表面的开口（5），并且下表面设置在中心位置以允许光发射器（3）的插入，以及所述开口（6）中的倾斜内表面构造成向上变宽。反射膜（7）设置在反射器的开口的倾斜内表面（6）上。外周缘是非反射膜构成区域（8），并且同时提供与非反射膜构成区域（8）相邻的端子位置识别标记（10）。沿着不设置反射膜的非反射膜构成区域（8）上的切割线切割反射体（4），防止反射膜（7）剥离。

38. 发明授权

US06897495B2 Field effect transistor and manufacturing method therefor 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US06897495B2
公开(公告)日：2005-05-24
申请号：US10270708
申请日：2002-10-11
申请人： Seikoh Yoshida , Takahiro Wada , Hironari Takehara
发明人： Seikoh Yoshida , Takahiro Wada , Hironari Takehara
IPC分类号： H01L21/285 , H01L29/20 , H01L29/80 , H01L31/0328 , H01L31/0336
CPC分类号： H01L21/28575 , H01L29/2003 , H01L29/802
摘要： GaN-based FET has a sapphire substrate of about 50 nm thick on which an n-type GaN electron transit layer and an Al0.2Gao0.8N electron supply layer are formed, together with n+-type GaN contact regions sandwiching the electron transit and supply layers therebetween. On the entire faces of these layer and regions is formed a polyimide interlayer insulating film of about 3000 nm thick that is formed with contact holes in which source, drain and gate electrodes are formed, each of which is comprised of a TaSi/Au layer and about 5000 nm in thickness. The source and drain electrodes are ohmic-connected to the n+-type GaN contact regions and the gate electrode is in contact with an SiO2 gate insulating film.
摘要翻译： GaN基FET具有大约50nm厚的蓝宝石衬底，其上形成有n型GaN电子传输层和Al 0.2 N高斯0.8 N电子供应层，以及夹在其间的电子传输和供给层的n + + + GaN接触区域。在这些层和区域的整个表面上形成约3000nm厚的聚酰亚胺层间绝缘膜，其形成有形成源极，漏极和栅电极的接触孔，每个都由TaSi / Au层和约5000nm厚度。源电极和漏极电极欧姆连接到n + + + GaN接触区域，并且栅极电极与SiO 2栅极绝缘膜接触。

39. 发明授权

US06397121B1 Process and apparatus for detecting loop stitch of tubular knitted fabric, and apparatus for linking tubular knitted fabric 有权
标题翻译：用于检测管状针织物的环针迹的方法和装置，以及用于连接管状针织物的装置
公开(公告)号：US06397121B1
公开(公告)日：2002-05-28
申请号：US09229869
申请日：1999-01-13
申请人： Sadao Kawamura , Akira Ishii , Takahiro Wada , Takuya Fukitsuke , Yushi Takeuchi
发明人： Sadao Kawamura , Akira Ishii , Takahiro Wada , Takuya Fukitsuke , Yushi Takeuchi
IPC分类号： D04B3510
CPC分类号： D05B7/00
摘要： There are provided a process and an apparatus for detecting loop stitches of a tubular knitted fabric and an apparatus for linking the tubular knitted fabric, which can automatically detect each of loop stitches formed in the tubular knitted fabric. According to the process for detecting the loop stitches, the tubular knitted fabric is extended by inserting a penetration element through the interior of the fabric having the loop stitches, and a multi-gradation image including an image of the loop stitches of the tubular knitted fabric extended by the penetration element is picked up. The locations of the loop stitches are detected by processing the multi-gradation image. The apparatus for detecting the loop stitches includes the penetration element, an image pickup device for picking up the multi-gradation image, and a loop stitch detecting section for detecting the locations of the loop stitches by processing the multi-gradation image.
摘要翻译：提供了一种用于检测管状针织物的环针迹的方法和装置，以及用于连接筒状针织物的装置，其可以自动检测形成在筒状针织物中的每个环形针迹。根据用于检测环针迹的处理，通过将穿透元件插入穿过具有环形针迹的织物的内部来延伸管状针织物，以及包括管状针织物的环形针迹的图像的多层次图像延伸穿透元素被拾起。通过处理多灰度图像来检测循环针迹的位置。用于检测环形针迹的装置包括穿透元件，用于拾取多层次图像的图像拾取装置，以及环形针迹检测部分，用于通过处理多灰度图像来检测环形针迹的位置。

40. 发明授权

US6162296A Method and apparatus for manufacturing chalcopyrite semiconductor thin films 有权
标题翻译：制造黄铜矿半导体薄膜的方法和装置
公开(公告)号：US6162296A
公开(公告)日：2000-12-19
申请号：US252388
申请日：1999-02-18
申请人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
发明人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
IPC分类号： C23C14/06 , C23C14/54 , C30B23/02 , H01L31/032 , C23C14/26
CPC分类号： H01L31/0322 , C23C14/0623 , C23C14/541 , C30B23/002 , C30B23/02 , C30B29/46 , Y02E10/541
摘要： The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.
摘要翻译：本发明的I-III-VI2型黄铜矿半导体薄膜的制造方法和装置通过在形成薄膜期间监测薄膜的成分，容易地控制薄膜组合并提高薄膜的再现性。该装置包括位于其中沉积有Cu（In，Ga）Se2膜的真空室和Mo涂覆的玻璃基板中的基板保持器和加热器。通过使用加热元件通过释放一定量的热来加热衬底来监测衬底温度的变化，测量加热衬底的温度的机理。通过使用用于加热元件的电源将基板保持在一定温度并监视供应到加热元件的功率的变化的机构来监测供电的变化。衬底温度或功率的变化可以与膜组成相关。

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