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31. 发明申请

US20160078955A1 NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20160078955A1
公开(公告)日：2016-03-17
申请号：US14946848
申请日：2015-11-20
申请人： Changhyun Lee , Jungdal Choi , Byeong-ln Choe
发明人： Changhyun Lee , Jungdal Choi , Byeong-ln Choe
IPC分类号： G11C16/26 , G11C16/34 , G11C16/10
CPC分类号： G11C16/26 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3418 , G11C16/3436 , G11C16/3454 , G11C16/3459 , G11C29/00
摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
摘要翻译：非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线以及当执行编程操作时，对未选字线的取消选择读取电压。电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上当执行读操作时，字线和与选择字线相邻的下字线。

32. 发明授权

US08570805B2 Nonvolatile memory device, programming method thereof and memory system including the same 有权
公开(公告)号：US08570805B2
公开(公告)日：2013-10-29
申请号：US13029518
申请日：2011-02-17
申请人： Changhyun Lee , Jinman Han , Doogon Kim , Sunghoi Hur , Jongin Yun
发明人： Changhyun Lee , Jinman Han , Doogon Kim , Sunghoi Hur , Jongin Yun
IPC分类号： G11C16/04
CPC分类号： G11C16/107 , G11C16/0483 , G11C16/10 , G11C2213/71 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： Provided is a programming method of a nonvolatile memory device. The nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular to the substrate. The programming method applies a first voltage to a selected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be programmed, applies a second voltage to an unselected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be program-prohibited, applies a third voltage to a selected string selection line connected to at least two memory strings in same row, applies a fourth voltage to an unselected string selection line connected to at least two memory strings in same row, and applies a program operation voltage to a plurality of word lines, each word line connected to each corresponding memory cell in the memory string, wherein the first to third voltages are positive voltages.

33. 发明申请

US20130145886A1 TRANSMISSION SYSTEM FOR SHIFT BY WIRE 有权
标题翻译：传输线路传输系统
公开(公告)号：US20130145886A1
公开(公告)日：2013-06-13
申请号：US13488803
申请日：2012-06-05
申请人： Sungil Lee , Hangil Park , Changhyun Lee
发明人： Sungil Lee , Hangil Park , Changhyun Lee
IPC分类号： F16H59/02
CPC分类号： F16H61/22 , F16H2061/223 , Y10T74/2003 , Y10T74/20085 , Y10T74/20098 , Y10T74/20104 , Y10T74/2011
摘要： The automatic transmission system includes a shift lever for changing stages by a user, a shift-lock device for fixing or releasing the shift lever, and a control unit including a shift control logic changing the stages of the transmission in accordance with the stage changed by the shift lever and a shift-lock control logic controlling the shift-lock device by stages for an initial time and a maintenance time after the initial time from when the stages may be changed such that the shift lever may be fixed, in order to shift-lock the shifted shift lever when the stages may be changed by the shift control logic.
摘要翻译：自动变速器系统包括用于使用者换档的变速杆，用于固定或释放换档杆的换档锁定装置，以及控制单元，其包括根据由所述变速箱改变的档位改变变速级的变速控制逻辑变速杆和换档锁定控制逻辑分段控制换档锁定装置，以便在初始时间和起动时间之后的维修时间从阶段可以改变以使得变速杆可以被固定，以便移动当换挡控制逻辑可以改变级时，锁定换挡杆。

34. 发明申请

US20120137800A1 PARKING RELEASE ACTUATOR 审中-公开
标题翻译：停车场执行机构
公开(公告)号：US20120137800A1
公开(公告)日：2012-06-07
申请号：US13285326
申请日：2011-10-31
申请人： Hangil Park , Changhyun Lee , Jungki Kim , Yongkuk Kim
发明人： Hangil Park , Changhyun Lee , Jungki Kim , Yongkuk Kim
IPC分类号： F16H19/08
CPC分类号： F16H63/3466 , F16H19/0622 , Y10T74/18792 , Y10T74/18832
摘要： In a parking release actuator, a related motion between a motor and a cable uses a number of worm gears and worm wheel gears using rotation motions in different directions, and the cable is pulled or released by a cable guide converting a rotation motion into an angular motion. Therefore, a number of worm gears and worm wheel gears and the cable guide are made compact and intensive. As a result, it is possible to reduce the entire size of a housing and significantly reduce the operation of the operator required for manual locking or manual release, thereby further improving convenience.
摘要翻译：在停车释放致动器中，电动机和电缆之间的相关运动使用多个蜗轮和蜗轮，其使用沿不同方向的旋转运动，并且电缆由电缆引导件拉动或释放，将电动机转动为旋转运动运动。因此，多个蜗轮和蜗轮齿轮以及电缆导轨紧凑而紧凑。结果，可以减小外壳的整体尺寸，并且显着地减少了手动锁定或手动释放所需的操作者的操作，从而进一步提高了便利性。

35. 发明申请

US20120120732A1 NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20120120732A1
公开(公告)日：2012-05-17
申请号：US13355834
申请日：2012-01-23
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
IPC分类号： G11C16/10 , G11C16/26
CPC分类号： G11C16/26 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3418 , G11C16/3436 , G11C16/3454 , G11C16/3459 , G11C29/00
摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
摘要翻译：非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线以及当执行编程操作时，对未选字线的取消选择读取电压。电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上当执行读操作时，字线和与选择字线相邻的下字线。

36. 发明授权

US08107295B2 Nonvolatile memory device and read method thereof 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US08107295B2
公开(公告)日：2012-01-31
申请号：US12607518
申请日：2009-10-28
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choi
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choi
IPC分类号： G11C11/34 , G11C16/06 , G11C5/14
CPC分类号： G11C8/08 , G11C11/5642 , G11C16/3418 , G11C29/00
摘要： An object of the present inventive concept is providing a nonvolatile memory device having improved reliability by compensating a threshold voltage of a flash memory cell.A nonvolatile memory device according to the present inventive concept includes a memory cell array connected to a plurality of word lines; and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to an unselect word line among the plurality of word lines when a read operation is performed. The voltage generator generates the unselect read voltage having a different level according to whether the unselect word line is adjacent to the select word line or not.A nonvolatile memory device according to the present inventive concept compensates a threshold voltage increased or decreased due to various causes. According to the present inventive concept, reliability of a nonvolatile memory device is improved.
摘要翻译：本发明构思的目的是通过补偿闪存单元的阈值电压来提供具有改善的可靠性的非易失性存储器件。根据本发明构思的非易失性存储器件包括连接到多个字线的存储单元阵列; 以及电压发生器，用于当执行读取操作时，将选择读取电压提供给选择字线和取消选择读取电压到多个字线中的未选择字线。电压发生器根据取消选择字线是否与选择字线相邻而产生具有不同电平的取消读取电压。根据本发明构思的非易失性存储器件补偿由于各种原因而增加或减少的阈值电压。根据本发明构思，提高了非易失性存储装置的可靠性。

37. 发明申请

US20110199829A1 Nonvolatile Memory Device, Programming Method Thereof And Memory System Including The Same 有权
标题翻译：非易失性存储器件，其编程方法和包括其的存储器系统
公开(公告)号：US20110199829A1
公开(公告)日：2011-08-18
申请号：US13029518
申请日：2011-02-17
申请人： Changhyun Lee , Jinman Han , Doogon Kim , Sunghoi Hur , Jongin Yun
发明人： Changhyun Lee , Jinman Han , Doogon Kim , Sunghoi Hur , Jongin Yun
IPC分类号： G11C16/04 , G11C16/10
CPC分类号： G11C16/107 , G11C16/0483 , G11C16/10 , G11C2213/71 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： Provided is a programming method of a nonvolatile memory device. The nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular to the substrate. The programming method applies a first voltage to a selected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be programmed, applies a second voltage to an unselected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be program-prohibited, applies a third voltage to a selected string selection line connected to at least two memory strings in same row, applies a fourth voltage to an unselected string selection line connected to at least two memory strings in same row, and applies a program operation voltage to a plurality of word lines, each word line connected to each corresponding memory cell in the memory string, wherein the first to third voltages are positive voltages.
摘要翻译：提供了一种非易失性存储器件的编程方法。非易失性存储器件包括基板和沿垂直于基板的方向堆叠的多个存储单元。编程方法将第一电压施加到连接到包括要编程的多个存储器单元的存储单元的同一列中的至少两个存储器串的选定位线，将第二电压施加到连接至少两个的未选定位线包含要被编程禁止的多个存储单元的存储单元的同一列中的存储器串向同一行中连接到至少两个存储器串的所选择的串选择线施加第三电压，将第四电压施加到未选择的串选择线连接到同一行中的至少两个存储器串，并且将编程操作电压施加到多个字线，每个字线连接到存储器串中的每个对应的存储单元，其中第一至第三电压是正电压。

38. 发明申请

US20160180937A1 NONVOLATILE MEMORY DEVICE AND DRIVING METHOD THEREOF 审中-公开
公开(公告)号：US20160180937A1
公开(公告)日：2016-06-23
申请号：US15055058
申请日：2016-02-26
申请人： Changhyun Lee
发明人： Changhyun Lee
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3459
摘要： According to example embodiments, a nonvolatile memory device includes a plurality of strings having a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the serially-connected selection transistors. A control logic is configured to perform a program operation for setting a threshold voltage of at least one of the serially-connected selection transistors.

39. 发明授权

US08929145B2 Nonvolatile memory device, programming method thereof and memory system including the same 有权
标题翻译：非易失性存储器件，其编程方法和包括其的存储器系统
公开(公告)号：US08929145B2
公开(公告)日：2015-01-06
申请号：US14043256
申请日：2013-10-01
申请人： Changhyun Lee , Jinman Han , Doogon Kim , Sunghoi Hur , Jongin Yun
发明人： Changhyun Lee , Jinman Han , Doogon Kim , Sunghoi Hur , Jongin Yun
IPC分类号： G11C16/04 , H01L27/115 , G11C16/10 , H01L29/792
CPC分类号： G11C16/107 , G11C16/0483 , G11C16/10 , G11C2213/71 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： Provided is a programming method of a nonvolatile memory device. The nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular to the substrate. The programming method applies a first voltage to a selected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be programmed, applies a second voltage to an unselected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be program-prohibited, applies a third voltage to a selected string selection line connected to at least two memory strings in same row, applies a fourth voltage to an unselected string selection line connected to at least two memory strings in same row, and applies a program operation voltage to a plurality of word lines, each word line connected to each corresponding memory cell in the memory string, wherein the first to third voltages are positive voltages.
摘要翻译：提供了一种非易失性存储器件的编程方法。非易失性存储器件包括基板和沿垂直于基板的方向堆叠的多个存储单元。编程方法将第一电压施加到连接到包括要编程的多个存储器单元的存储单元的同一列中的至少两个存储器串的选定位线，将第二电压施加到连接至少两个的未选定位线包含要被编程禁止的多个存储单元的存储单元的同一列中的存储器串向同一行中连接到至少两个存储器串的所选择的串选择线施加第三电压，将第四电压施加到未选择的串选择线连接到同一行中的至少两个存储器串，并且将编程操作电压施加到多个字线，每个字线连接到存储器串中的每个对应的存储单元，其中第一至第三电压是正电压。

40. 发明授权

US08919218B2 Transmission system for shift by wire 有权
标题翻译：用于换线的传动系统
公开(公告)号：US08919218B2
公开(公告)日：2014-12-30
申请号：US13488803
申请日：2012-06-05
申请人： Sungil Lee , Hangil Park , Changhyun Lee
发明人： Sungil Lee , Hangil Park , Changhyun Lee
IPC分类号： F16H59/02
CPC分类号： F16H61/22 , F16H2061/223 , Y10T74/2003 , Y10T74/20085 , Y10T74/20098 , Y10T74/20104 , Y10T74/2011
摘要： The automatic transmission system includes a shift lever for changing stages by a user, a shift-lock device for fixing or releasing the shift lever, and a control unit including a shift control logic changing the stages of the transmission in accordance with the stage changed by the shift lever and a shift-lock control logic controlling the shift-lock device by stages for an initial time and a maintenance time after the initial time from when the stages may be changed such that the shift lever may be fixed, in order to shift-lock the shifted shift lever when the stages may be changed by the shift control logic.
摘要翻译：自动变速器系统包括用于使用者换档的变速杆，用于固定或释放换档杆的换档锁定装置，以及控制单元，其包括根据由所述变速箱改变的档位改变变速级的变速控制逻辑变速杆和换档锁定控制逻辑分段控制换档锁定装置，以便在初始时间和起动时间之后的维修时间从阶段可以改变以使得变速杆可以被固定，以便移动当换挡控制逻辑可以改变级时，锁定换挡杆。

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