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31. 发明授权

US10854497B2 Apparatus and method of selective turning over a row of substrates in an array of substrates in a processing system 有权
公开(公告)号：US10854497B2
公开(公告)日：2020-12-01
申请号：US15905742
申请日：2018-02-26
申请人： Lawrence Chung-Lai Lei
发明人： Lawrence Chung-Lai Lei
IPC分类号： B65G47/248 , H01L21/687 , H01L21/677
摘要： A device for manipulating at least a first row of wafers and a second row of wafers, includes: a first holder configured to hold the first row of wafers, the first holder having a first rod and a second rod, the first rod and the second rod of the first holder defining a space therebetween for accommodating the first row of wafers, wherein a distance between the first rod and the second rod of the first holder is variable; and a second holder configured to hold the second row of wafers, the second holder having a first rod and a second rod, the first rod and the second rod of the second holder defining a space therebetween for accommodating the second row of wafers, wherein a distance between the first rod and the second rod of the second holder is variable.

32. 发明授权

US08367565B2 Methods and systems of transferring, docking and processing substrates 有权
标题翻译：转移，对接和处理基材的方法和系统
公开(公告)号：US08367565B2
公开(公告)日：2013-02-05
申请号：US12973736
申请日：2010-12-20
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/00
CPC分类号： B05D3/04 , C23C16/44 , H01L21/673 , H01L21/677
摘要： In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.
摘要翻译：根据本文描述的一些实施例，提供了用于转移衬底的方法。该方法包括将一个或多个基底装载到一个或多个移动室的相应移动室中。移动室可在与两个或更多个处理模块相邻定位的第一轨上移动。每个移动室被构造成维持指定的气体状态。相应的移动室沿着第一轨道移动。相应的移动室被对接到两个或更多个处理模块的相应处理模块。一个或多个基板中的至少一个从相应的移动室传送到相应的处理模块。

33. 发明授权

US08110511B2 Methods and systems of transferring a substrate to minimize heat loss 有权
标题翻译：转移衬底以最小化热损失的方法和系统
公开(公告)号：US08110511B2
公开(公告)日：2012-02-07
申请号：US12319223
申请日：2009-01-03
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Simon Zhu , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Simon Zhu , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/00
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67173 , H01L21/67196 , H01L21/67207 , H01L21/67706 , H01L21/67748 , H01L21/67754 , Y10S414/135
摘要： A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：提供了一种在过程模块或加载锁定站之间传送一个或多个基板同时最小化热损失的方法。在一些实施例中，该方法包括以下步骤：识别存在于初始处理位置P1的衬底S1的目的地位置D1; 如果目的地位置D1被基板S2占用，则将基板S1保持在初始处理位置P1; 并且如果目的地位置D1可用，则将基板S1传送到目的地位置D1。根据另外的实施例，该方法在用于处理基板的系统上进行，该系统包括两个或更多个处理模块，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

34. 发明申请

US20120006265A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20120006265A1
公开(公告)日：2012-01-12
申请号：US13235855
申请日：2011-09-19
申请人： BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

35. 发明申请

US20110217469A1 Methods and Systems of Transferring, Docking and Processing Substrates 有权
标题翻译：转移，对接和处理基板的方法和系统
公开(公告)号：US20110217469A1
公开(公告)日：2011-09-08
申请号：US12973736
申请日：2010-12-20
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/673 , B05D3/04 , C23C16/44
CPC分类号： B05D3/04 , C23C16/44 , H01L21/673 , H01L21/677
摘要： In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.
摘要翻译：根据本文描述的一些实施例，提供了用于转移衬底的方法。该方法包括将一个或多个基底装载到一个或多个移动室的相应移动室中。移动室可在与两个或更多个处理模块相邻定位的第一轨上移动。每个移动室被构造成维持指定的气体状态。相应的移动室沿着第一轨道移动。相应的移动室被对接到两个或更多个处理模块的相应处理模块。一个或多个基板中的至少一个从相应的移动室传送到相应的处理模块。

36. 发明授权

US07897525B2 Methods and systems of transferring, docking and processing substrates 有权
标题翻译：转移，对接和处理基材的方法和系统
公开(公告)号：US07897525B2
公开(公告)日：2011-03-01
申请号：US12319231
申请日：2008-12-31
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/00
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

37. 发明申请

US20100162954A1 Integrated facility and process chamber for substrate processing 审中-公开
标题翻译：用于基板加工的集成设备和处理室
公开(公告)号：US20100162954A1
公开(公告)日：2010-07-01
申请号：US12319224
申请日：2008-12-31
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Ronald L. Rose
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Ronald L. Rose
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , C23C14/568 , H01L21/67161 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67736 , H01L21/67742 , H01L21/67748 , H01L21/67754
摘要： In accordance with some embodiments described herein, a process module facility is provided, comprising: at least one process chamber carried in frame, a subfloor adjacent the process module, a stationary pump and electrical box positioned atop the subfloor; and gas control lines and vacuum exhaust lines housed within the subfloor and coupled the process chamber. The process module facility may be integrated with a larger system for processing substrates which includes two or more process module facilities, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：根据本文所述的一些实施例，提供了一种处理模块设施，包括：至少一个框架承载的处理室，邻近处理模块的底层地板，定位在底层地板顶部的固定泵和电箱; 以及气体控制管线和真空排气管线，其容纳在底层地板内并且连接处理室。过程模块设备可以与更大的系统集成，用于处理基板，其包括两个或更多个处理模块设施，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

38. 发明申请

US20090156004A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20090156004A1
公开(公告)日：2009-06-18
申请号：US12335983
申请日：2008-12-16
申请人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/285 , H01L21/443
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

39. 发明授权

US06430468B1 Method and apparatus for accurate placement of semiconductor wafers onto respective platforms within a single reaction chamber 失效
标题翻译：将半导体晶片精确放置在单个反应室内的相应平台上的方法和装置
公开(公告)号：US06430468B1
公开(公告)日：2002-08-06
申请号：US09716039
申请日：2000-11-17
申请人： Avi Tepman , Lawrence Chung-Lai Lei
发明人： Avi Tepman , Lawrence Chung-Lai Lei
IPC分类号： G06F700
CPC分类号： H01L21/67748 , H01L21/67751 , Y10S414/136
摘要： Method and apparatus are provided for accurately placing first and second semiconductor wafers onto a first and a second platforms, respectively, in a single processing chamber despite changes in the exact positions of the platforms caused by variations in temperature within the chamber. A computer controls a mechanism having a pair of wafer-supporting blades to insert the wafers into the chamber. The computer determines from position sensors when the first wafer is centered over the first platform, then actuates lift pins associated with the first platform to lift the first wafer off of its respective blade. Then the computer in the same way in response to other position sensors moves the second wafer into alignment with the second platform, and raises by lift pins the second wafer off of its respective blade. Thereafter the computer removes the blades from the chamber, and lowers the wafers in precise positions onto their respective platforms.
摘要翻译：提供了方法和装置，用于在第一和第二平台分别在单个处理室中精确地放置第一和第二半导体晶片，尽管由室内的温度变化导致的平台的精确位置的变化。计算机控制具有一对晶片支撑刀片以将晶片插入腔室的机构。当第一晶片在第一平台上居中时，计算机从位置传感器确定，然后致动与第一平台相关联的提升销，以将第一晶片从其相应的叶片提升。然后以相同方式响应于其它位置传感器的计算机将第二晶片移动到与第二平台对准，并且通过提升销使第二晶片从其相应的刀片升高。此后，计算机从腔室中移除刀片，并将晶片在精确位置下降到各自的平台上。

40. 发明授权

US6063441A Processing chamber and method for confining plasma 失效
标题翻译：处理室和限制等离子体的方法
公开(公告)号：US6063441A
公开(公告)日：2000-05-16
申请号：US982727
申请日：1997-12-02
申请人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
发明人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/4585 , C23C16/5096 , H01J37/32477 , H01J37/32522 , H01J37/32834 , H01J2237/0206
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. The processing chamber includes a chamber lid assembly having an isolator ring member that has a sloping surface for confirming the plasma within a processing zone of the processing chamber while the wafer is being processed therein. A method for forming a CVD layer on a wafer comprising elevating the pedestal until an upper pedestal surface of the pedestal extends above a lower edge of the isolator ring member.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选地也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。处理室包括具有隔离器环构件的腔室盖组件，该隔离器环构件具有倾斜表面，用于在晶片处理期间确认处理室的处理区域内的等离子体。一种用于在晶片上形成CVD层的方法，包括升高基座，直到基座的上基座表面延伸到隔离器环构件的下边缘的上方。

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