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31. 发明申请

US20060006074A1 Method and composition for polishing a substrate 失效
标题翻译：抛光基材的方法和组合物
公开(公告)号：US20060006074A1
公开(公告)日：2006-01-12
申请号：US11196876
申请日：2005-08-04
申请人： Feng Liu , Tianbao Du , Alain Duboust , Yan Wang , Yongqi Hu , Stan Tsai , Liang-Yuh Chen , Wen-Chiang Tu , Wei-Yung Hsu
发明人： Feng Liu , Tianbao Du , Alain Duboust , Yan Wang , Yongqi Hu , Stan Tsai , Liang-Yuh Chen , Wen-Chiang Tu , Wei-Yung Hsu
IPC分类号： B23H5/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , H01L21/32125 , H01L21/6875 , H01L21/7684
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。在一个方面，提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义上的导电材料的方法，该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率除去，以及然后用至少一种化学机械抛光技术研磨衬底。

32. 发明授权

US07569134B2 Contacts for electrochemical processing 失效
标题翻译：电化学处理接点
公开(公告)号：US07569134B2
公开(公告)日：2009-08-04
申请号：US11424170
申请日：2006-06-14
申请人： Paul Butterfield , Liang-Yuh Chen , Yongqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai
发明人： Paul Butterfield , Liang-Yuh Chen , Yongqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai
IPC分类号： B23H5/06 , C25D17/00
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/046 , B24B37/24 , B24B53/017
摘要： Systems and methods for electrochemically processing a substrate. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.
摘要翻译：用于电化学处理衬底的系统和方法。接触元件限定在处理期间可定位成接触衬底的衬底接触表面。在一个实施例中，接触元件包括线元件。在另一个实施例中，接触元件是旋转构件。在一个实施例中，接触元件包括贵金属。

33. 发明授权

US07384534B2 Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP 失效
标题翻译：电解质具有良好的平坦化能力，高电镀速度和光滑表面光洁度
公开(公告)号：US07384534B2
公开(公告)日：2008-06-10
申请号：US11074274
申请日：2005-03-07
申请人： Lizhong Sun , Feng Q. Liu , Siew Neo , Stan Tsai , Liang-Yuh Chen
发明人： Lizhong Sun , Feng Q. Liu , Siew Neo , Stan Tsai , Liang-Yuh Chen
IPC分类号： C25F3/00 , C09K13/06
CPC分类号： B23H3/08 , B23H5/08 , B24B37/0056 , B24B37/044 , B24B37/046 , C09G1/04 , C25F3/02 , H01L21/32125 , H01L21/32134
摘要： Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, two or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, one or more pH adjusting agents, and one or more electrically resistive additives.
摘要翻译：提供了电解质组合物和使用电解质组合物平坦化基材表面的方法。一方面，电解质组合物包括一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种pH调节剂。另一方面，电解质组合物包括一种或多种螯合剂，两种或更多种腐蚀抑制剂和一种或多种pH调节剂。另一方面，电解质组合物包括一种或多种螯合剂，一种或多种腐蚀抑制剂，一种或多种pH调节剂和一种或多种电阻添加剂。

34. 发明申请

US20080017521A1 PROCESS CONTROL IN ELECTRO-CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光过程控制
公开(公告)号：US20080017521A1
公开(公告)日：2008-01-24
申请号：US11828937
申请日：2007-07-26
申请人： ANTOINE MANENS , Stan Tsai , Liang-Yuh Chen
发明人： ANTOINE MANENS , Stan Tsai , Liang-Yuh Chen
IPC分类号： B23H3/00
CPC分类号： B24B37/013 , B23H5/08 , B24B37/042 , B24B37/046 , B24B49/04 , H04N1/00
摘要： The present invention relates to method and apparatus for determining removal rate and polishing endpoint of electropolishing process. One embodiment provides a method for determining an amount of material removed from a substrate. The method comprises providing a counter electrode and a conductive polishing article disposed over the counter electrode, contacting the substrate with the conductive polishing article so that the substrate is electrically connected to the conductive polishing article, distributing an electrolyte to the substrate and the counter electrode, and polishing one or more conductive materials on the substrate by applying a bias between the conductive polishing article and the counter electrode. The method further comprises determining a total charge removed from the substrate, and correlating the total charge removed and a thickness of material removed from the substrate.
摘要翻译：本发明涉及用于确定电抛光工艺的去除速率和抛光终点的方法和装置。一个实施例提供了一种用于确定从基底去除的材料的量的方法。该方法包括提供对置电极和布置在对置电极上的导电抛光制品，使基底与导电抛光制品接触，使得基底电连接到导电抛光制品，将电解质分配到基底和对电极，并且通过在导电抛光制品和对电极之间施加偏压来抛光衬底上的一种或多种导电材料。该方法还包括确定从衬底去除的总电荷，以及将去除的总电荷与从衬底去除的材料的厚度相关联。

35. 发明授权

US07303662B2 Contacts for electrochemical processing 有权
标题翻译：电化学处理接点
公开(公告)号：US07303662B2
公开(公告)日：2007-12-04
申请号：US10210972
申请日：2002-08-02
申请人： Rashid Mavliev , Stan Tsai , Yongqi Hu , Paul Butterfield , Antoine Manens , Liang-Yuh Chen
发明人： Rashid Mavliev , Stan Tsai , Yongqi Hu , Paul Butterfield , Antoine Manens , Liang-Yuh Chen
IPC分类号： C25F3/16 , C25F3/30 , C25F7/00
CPC分类号： B23H5/08 , B24B37/046 , B24B37/20 , H01L21/32125
摘要： Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.
摘要翻译：电化学处理的系统和方法。接触元件限定在处理期间可定位成接触衬底的衬底接触表面。在一个实施例中，接触元件包括线元件。在另一个实施例中，接触元件是旋转构件。在一个实施例中，接触元件包括贵金属。

36. 发明申请

US20070066201A1 CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING 有权
标题翻译：电化学机械抛光导电抛光法
公开(公告)号：US20070066201A1
公开(公告)日：2007-03-22
申请号：US11556011
申请日：2006-11-02
申请人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai
发明人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai
IPC分类号： B23F21/03
CPC分类号： B82Y30/00 , B24B37/046 , B24B37/24 , B24B37/26 , B24D3/34
摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.
摘要翻译：提供了一种用于平坦化基板表面的制造和设备。在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底的至少部分导电表面的主体。可以在抛光制品中形成多个穿孔，以使材料流过其中。电极还通过多个穿孔的至少一部分暴露于抛光表面。制品还可以包括具有多个凹槽的抛光表面，其中多个凹槽的一部分与多个穿孔的一部分相交。

37. 发明授权

US07104869B2 Barrier removal at low polish pressure 失效
公开(公告)号：US07104869B2
公开(公告)日：2006-09-12
申请号：US10187857
申请日：2002-06-27
申请人： Stan Tsai , Rashid Mavliev , Lizhong Sun , Feng Q. Liu , Liang-Yuh Chen , Ratson Morad
发明人： Stan Tsai , Rashid Mavliev , Lizhong Sun , Feng Q. Liu , Liang-Yuh Chen , Ratson Morad
IPC分类号： B24B1/00 , H01L21/47
CPC分类号： B24B37/0056 , B24B37/044 , B24B49/006 , B24B49/16 , C09G1/02 , H01L21/3212
摘要： The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

38. 发明申请

US20060148381A1 Pad assembly for electrochemical mechanical processing 有权
标题翻译：焊接组件用于电化学机械加工
公开(公告)号：US20060148381A1
公开(公告)日：2006-07-06
申请号：US11369065
申请日：2006-03-06
申请人： Shou-Sung Chang , Stan Tsai , Donald Olgado , Liang-Yuh Chen , Alain Duboust , Ralph Wadensweiler
发明人： Shou-Sung Chang , Stan Tsai , Donald Olgado , Liang-Yuh Chen , Alain Duboust , Ralph Wadensweiler
IPC分类号： B24B51/00
CPC分类号： B24B37/22 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.
摘要翻译：提供了用于处理基板的垫组件的实施例。焊盘组件包括处理层，其具有适于处理衬底的工作表面，耦合到处理层的下层并设置在处理层下方的电极，以及具有设置在处理层的工作表面下方和下方的上表面的电极。电极的上表面至少部分地暴露于工作表面，以在电极的上表面和工作表面之间提供电解质通路。

39. 发明申请

US20050098446A1 Multi-layer polishing pad 有权
标题翻译：多层抛光垫
公开(公告)号：US20050098446A1
公开(公告)日：2005-05-12
申请号：US10956617
申请日：2004-10-01
申请人： Stan Tsai , Shou-Sung Chang , Liang-Yuh Chen
发明人： Stan Tsai , Shou-Sung Chang , Liang-Yuh Chen
IPC分类号： B23H5/08 , B24B37/04 , B24B37/20 , B24B37/22 , B24B37/24 , B24B37/26 , B24D13/14 , H01L21/304 , B23H3/00
CPC分类号： B23H5/08 , B24B37/046 , B24B37/22
摘要： A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness greater than the first thickness and a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects at least 2 mil under an applied pressure of 1 psi or less.
摘要翻译：抛光垫具有固定到抛光层的抛光层和背衬层。抛光层具有抛光表面，第一厚度，第一可压缩性和约40至80肖氏硬度之间的硬度。背衬层具有大于第一厚度的第二厚度和大于第一可压缩性的第二压缩率。第一厚度，第一可压缩性，第二厚度和第二压缩性使得抛光表面在1psi或更小的施加压力下偏转至少2密耳。

40. 发明授权

US06869498B1 Chemical mechanical polishing with shear force measurement 失效
标题翻译：化学机械抛光用剪切力测量
公开(公告)号：US06869498B1
公开(公告)日：2005-03-22
申请号：US10358780
申请日：2003-02-04
申请人： Stan Tsai , Rashid Mavliev , Liang-Yuh Chen
发明人： Stan Tsai , Rashid Mavliev , Liang-Yuh Chen
IPC分类号： B24B37/04 , B24B49/16 , H01L21/304
CPC分类号： B24B37/005 , B24B49/16
摘要： A chemical mechanical polishing system uses a shear force measurement system. Polishing parameters, such as the polishing pressure, can be adjusted in response to the measured shear force. For example, the pressure can be increased to avoid hydroplaning or decreased to avoid delamination or damage to a low-k dielectric film being polished. The shear force measurement system can include a sensor disk and one or more load cells.
摘要翻译：化学机械抛光系统使用剪切力测量系统。抛光参数，例如抛光压力，可以根据测得的剪切力进行调节。例如，可以增加压力以避免滑水或降低，以避免分层或损坏被抛光的低k电介质膜。剪切力测量系统可以包括传感器盘和一个或多个称重传感器。

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