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31. 发明授权

US4802952A Method for manufacturing semiconductor absolute pressure sensor units 失效
标题翻译：制造半导体绝对压力传感器单元的方法
公开(公告)号：US4802952A
公开(公告)日：1989-02-07
申请号：US158750
申请日：1988-02-22
申请人： Shigeyuki Kobori , Kazuji Yamada , Ryoichi Kobayashi , Atsushi Miyazaki , Seikou Suzuki
发明人： Shigeyuki Kobori , Kazuji Yamada , Ryoichi Kobayashi , Atsushi Miyazaki , Seikou Suzuki
IPC分类号： G01L7/00 , G01L9/00 , G01L9/04 , H01L27/20 , H01L29/84 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L27/20 , G01L9/0042 , H01L29/84 , Y10T29/49103
摘要： A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.

32. 发明授权

US4591780A Constant current source device having a ratio metricity between supply voltage and output current 失效
标题翻译：恒流源装置具有电源电压和输出电流之间的比率
公开(公告)号：US4591780A
公开(公告)日：1986-05-27
申请号：US559467
申请日：1983-12-08
申请人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
发明人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
IPC分类号： H03F3/343 , G05F3/26 , G05F3/30 , H03F3/34 , H03F3/347 , G05F3/20
CPC分类号： G05F3/30 , G05F3/265
摘要： A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.
摘要翻译：电流源装置控制流过负载的电流的变化率，使得电流的变化率等于电源电压波动的变化率。第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。第二晶体管具有连接到第一晶体管的基极的基极，连接到第三电阻器的发射极和连接到负载的集电极。通过负载，第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。通过流过第一电阻器的参考电流，第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降基本上等于流过负载的第二晶体管的集电极电流的晶体管被设定为预定值。第二晶体管的发射极面积比第一晶体管的发射极面积增大，以获得足够大的输出电流。

33. 发明授权

US07801070B2 Mobile communication system, mobile terminal transfer device, and mobile communication method 有权
标题翻译：移动通信系统，移动终端传输设备和移动通信方式
公开(公告)号：US07801070B2
公开(公告)日：2010-09-21
申请号：US10677386
申请日：2003-10-03
申请人： Koji Omae , Ryoichi Kobayashi , Hideaki Takahashi , Takehiro Ikeda , Masahiro Inoue , Ichiro Okajima , Narumi Umeda
发明人： Koji Omae , Ryoichi Kobayashi , Hideaki Takahashi , Takehiro Ikeda , Masahiro Inoue , Ichiro Okajima , Narumi Umeda
IPC分类号： H04B7/14 , H04L12/28 , H04L12/56
CPC分类号： H04W40/02 , H04W8/02 , H04W8/065 , H04W8/085 , H04W36/0011 , H04W48/16 , H04W80/00 , H04W80/04 , Y02D70/30
摘要： A mobile communication system comprises a plurality of transfer devices configured to transfer packets to a visited position of a mobile terminal, a plurality of connection management devices arranged in a network and configured to connect to the mobile terminal, and a mobile terminal including a detection unit configured to detect the transfer device, and a communication unit configured to connect to the connection management device, and transmit/receive packets to/from the transfer device detected by the detection unit via the connection management device.
摘要翻译：一种移动通信系统，包括被配置为将分组传送到移动终端的访问位置的多个传送设备，布置在网络中并被配置为连接到移动终端的多个连接管理设备，以及包括检测单元的移动终端被配置为检测所述传送设备，以及通信单元，被配置为连接到所述连接管理设备，以及经由所述连接管理设备向所述检测单元检测到的传送设备发送/接收分组。

34. 发明授权

US07291685B2 Process for producing low polymer of α-olefin 有权
标题翻译：生产α-烯烃低聚物的方法
公开(公告)号：US07291685B2
公开(公告)日：2007-11-06
申请号：US10489611
申请日：2002-09-19
申请人： Ryoichi Kobayashi , Shigeki Kura
发明人： Ryoichi Kobayashi , Shigeki Kura
IPC分类号： C08F2/00 , C07C2/04
CPC分类号： C08F10/00 , C07C2/30 , C07C2531/14 , C08F110/02 , Y10S585/901 , Y10S585/921 , Y10S585/922 , Y10S585/95 , C07C11/02 , C08F2/002 , C08F4/642 , C08F2/06 , C08F2500/02
摘要： There is disclosed a process for producing an α-olefin oligomer by subjecting an α-olefin to oligomerization reaction in the presence of a catalyst and an organic solvent which comprises the step of spraying a solvent containing the organic solvent in the form of a linear or bar-like pressure fluid toward a wall surface of a vapor phase portion of a reactor from a nozzle fitted within a space of the vapor phase portion of the reactor to conduct the oligomerization reaction while cleaning the wall surface of the vapor phase portion of the reactor. In the production process of the present invention, it is possible to effectively prevent deposition of polymers onto the wall surface of the vapor phase portion of the reactor and stably operate the reactor for a long period of time.
摘要翻译：公开了一种通过在催化剂和有机溶剂的存在下使α-烯烃进行低聚反应来生产α-烯烃低聚物的方法，该方法包括以下步骤：将含有有机溶剂的溶剂以线性或棒状压力流体朝向安装在反应器的气相部分的空间内的喷嘴的反应器的气相部分的壁表面进行，以便在清洁反应器的气相部分的壁表面的同时进行低聚反应。在本发明的制造方法中，能够有效地防止聚合物沉积在反应器的气相部分的壁面上并长时间稳定地操作反应器。

35. 发明申请

US20060006749A1 Controller for electric power steering and electric power steering system 有权
标题翻译：电动助力转向和电动助力转向系统控制器
公开(公告)号：US20060006749A1
公开(公告)日：2006-01-12
申请号：US11173002
申请日：2005-07-05
申请人： Shoji Sasaki , Ryoichi Kobayashi , Norio Moriyama , Hiroshi Ichige
发明人： Shoji Sasaki , Ryoichi Kobayashi , Norio Moriyama , Hiroshi Ichige
IPC分类号： H02K11/00
CPC分类号： H05K7/1432 , B62D5/0406 , H02K11/33
摘要： An electric power steering drive system provided with a motor with its torque pulsation reduced, and a controller characterized by excellent manufacturability. The stator core of a motor is composed of an annular back core and a plurality of teeth created separately from the back core and secured on the inner periphery of the back core. An 8-pole/9-slot, 10-pole/9-slot or 10-pole/12-slot relationship is found between the number of the magnets of a rotor (number of poles) and the number of slots. The diameter of the stator coil is 1.0 mm or more. A motor controller comprises a power module, a conductor module and a control module. The terminal of the power module and the bus bar of the conductor module are connected by welding, whereas the terminal of the power module and terminal of the control module are connected by soldering.
摘要翻译：具有减小扭矩脉动的电动机的电动助力转向驱动系统，以及制造性优异的控制器。电动机的定子铁芯由环形后芯和与后芯分开产生并固定在后芯的内周上的多个齿组成。在转子的磁体数（极数）和插槽数之间发现了8极/ 9槽，10极/ 9槽或10极/ 12槽的关系。定子线圈的直径为1.0mm以上。电机控制器包括电源模块，导体模块和控制模块。电源模块的端子和导体模块的母线通过焊接连接，而电源模块的端子和控制模块的端子通过焊接连接。

36. 发明授权

US6046584A Internal combustion engine rotating position detector using a differential signal from magnetic sensing portions 失效
标题翻译：内燃机旋转位置检测器使用来自磁感应部分的差分信号
公开(公告)号：US6046584A
公开(公告)日：2000-04-04
申请号：US939440
申请日：1997-09-29
申请人： Mitsutoshi Nakane , Ryoichi Kobayashi , Noriyoshi Urushiwara
发明人： Mitsutoshi Nakane , Ryoichi Kobayashi , Noriyoshi Urushiwara
IPC分类号： G01B7/30 , F02D45/00 , F02P7/067 , G01B7/00 , G01B7/14 , F02D45/20
CPC分类号： F02P7/0675
摘要： A rotating position detecting device is capable of detecting a rotating position with high accuracy even if there exists variation in the air gap, and thereby capable of widening a detectable range of the air gap. A position of an irregularity on the detected rotating body is converted into a rectangular wave-form electric signal, and a rotating position of the detected rotating body is detected based on a building-up signal or a falling signal of the rectangular wave-form. The rotating position detecting device has a magneto-electric converter element for outputting an electric signal corresponding to a magnetic intensity, a magnet for generating a magnetic field, and a detected rotating body made of a magnetic material having the irregularity.
摘要翻译：旋转位置检测装置即使存在气隙的变化也能够高精度地检测旋转位置，从而能够扩大气隙的可检测范围。检测到的旋转体上的不规则位置被转换为矩形波形电信号，并且基于矩形波形的建立信号或下降信号来检测检测到的旋转体的旋转位置。旋转位置检测装置具有用于输出与磁场强度相对应的电信号的磁电转换元件，用于产生磁场的磁体，以及由具有不规则性的磁性材料制成的检测的旋转体。

37. 发明授权

US5967128A Ignition apparatus for an internal combustion engine 失效
标题翻译：内燃机点火装置
公开(公告)号：US5967128A
公开(公告)日：1999-10-19
申请号：US83139
申请日：1998-05-22
申请人： Hiroshi Onuki , Takashi Ito , Katsuaki Fukatsu , Ryoichi Kobayashi , Noboru Sugiura
发明人： Hiroshi Onuki , Takashi Ito , Katsuaki Fukatsu , Ryoichi Kobayashi , Noboru Sugiura
IPC分类号： F02P3/055 , H01F38/12 , H03K17/16 , H03K17/56 , F02P3/05
CPC分类号： F02P3/0554
摘要： According to the invention, a primary winding of an ignition coil is coupled with an insulated-gate bipolar transistor (IGBT). The IGBT is controlled by a current restriction circuit, which includes a control transistor for performing the on-off operation of the IGBT such that the IGBT is made conductive upon occurrence of an ignition control signal, and nonconductive, when a primary current of the ignition coil reaches a certain value depending on a reference voltage determined by a bias circuit. The bias circuit has a condenser, which is charged by a base current of the control transistor to change the base potential of the transistor slowly, when the transistor is made nonconductive.
摘要翻译：根据本发明，点火线圈的初级绕组与绝缘栅双极晶体管（IGBT）耦合。 IGBT由电流限制电路控制，该电流限制电路包括用于执行IGBT的开关操作的控制晶体管，使得当点火控制信号发生时IGBT是导通的，并且在点火的初级电流时导通线圈根据由偏置电路确定的参考电压达到一定值。偏置电路具有电容器，当晶体管不导通时，电容器被控制晶体管的基极电流充电以缓慢地改变晶体管的基极电位。

38. 发明授权

US5664550A Ignition system of internal combustion engine 失效
标题翻译：内燃机点火系统
公开(公告)号：US5664550A
公开(公告)日：1997-09-09
申请号：US691329
申请日：1996-08-02
申请人： Takashi Ito , Katsuaki Fukatsu , Ryoichi Kobayashi , Noboru Sugiura
发明人： Takashi Ito , Katsuaki Fukatsu , Ryoichi Kobayashi , Noboru Sugiura
IPC分类号： F02P3/05 , F02P3/055 , H01F38/12 , F02P11/00
CPC分类号： F02P3/0552 , F02P3/051
摘要： An ignition circuit is formed in one chip comprising an insulated gate bipolar transistor for controlling the flow of a primary current, a current limiting circuit for limiting the current flowing into the transistor, and a thermal shut-off circuit capable of forcibly shutting off the primary current in case of trouble. In the ignition circuit, a power supply GND terminal and an ignition control signal positive terminal are divided.
摘要翻译：点火电路形成在一个芯片中，包括用于控制一次电流的绝缘栅双极晶体管，用于限制流入晶体管的电流的限流电路，以及能够强制关闭主电流的热关断电路遇到麻烦的时候。在点火电路中，分配电源GND端子和点火控制信号正极端子。

39. 发明授权

US5629114A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region 失效
标题翻译：相移掩模及其制造方法以及使用包含半透明区域的相移掩模的曝光方法
公开(公告)号：US5629114A
公开(公告)日：1997-05-13
申请号：US480371
申请日：1995-06-07
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/80 , G03F1/32 , G03F1/38 , G03F1/54
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

40. 发明授权

US5474864A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5474864A
公开(公告)日：1995-12-12
申请号：US155370
申请日：1993-11-22
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/80 , G03F1/32 , G03F1/38 , G03F1/54
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

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