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31. 发明申请

US20070184618A1 PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：用于生产半导体集成电路器件和半导体集成电路器件的工艺
公开(公告)号：US20070184618A1
公开(公告)日：2007-08-09
申请号：US11735757
申请日：2007-04-16
申请人： Yoshikazu Tanabe , Naoki Yamamoto , Shinichiro Mitani , Yuko Hanaoka
发明人： Yoshikazu Tanabe , Naoki Yamamoto , Shinichiro Mitani , Yuko Hanaoka
IPC分类号： H01L21/336
CPC分类号： H01L21/28247 , H01L21/28044 , H01L21/28061 , H01L21/32105 , H01L21/67098 , H01L21/67115 , H01L21/823842 , H01L21/823857 , H01L27/1214 , H01L29/4941 , H01L29/4983
摘要： In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode can be prevented, a mixed gas containing a hydrogen gas and steam synthesized from an oxygen gas and a hydrogen gas is supplied to a major surface of a semiconductor wafer A1, and a heat treatment for improving a profile of a gate insulating film that has been cut by etching under an edge part of the gate electrode is conducted under a low thermal load condition in that the refractor metal film is substantially not oxidized, and boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode is not diffused to the semiconductor substrate through the gate oxide film.
摘要翻译：为了提供一种在采用多金属栅极结构和双栅极结构的CMOS LSI中使用的轻氧化工艺技术，使得构成栅电极的一部分的难熔金属膜的氧化和包含在p中的硼的扩散可以防止构成栅电极的一部分的多晶硅膜，将含有氢气和从氧气和氢气合成的蒸汽的混合气体供给到半导体晶片A1的主表面，在低热负荷条件下，通过在栅电极的边缘部分进行蚀刻而切割的栅极绝缘膜的轮廓的处理是在折射金属膜基本上不被氧化的同时，构成栅电极的一部分的多晶硅型硅膜不会通过栅极氧化膜扩散到半导体衬底。

32. 发明授权

US07221056B2 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07221056B2
公开(公告)日：2007-05-22
申请号：US10871282
申请日：2004-06-21
申请人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
发明人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
IPC分类号： H01L23/495
CPC分类号： H01L21/02063 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L21/8221 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing process for a semiconductor integrated circuit device prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The metal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.
摘要翻译：半导体集成电路器件的制造工艺防止金属布线和硼掺杂的硅插件在其上形成的MOS晶体管的热处理中发生反应，并降低接触电阻上升的可能性。金属硼化物形成在金属布线上的位于层间绝缘膜的开口底部的露出的金属表面上。为了促进这种金属硼化物的形成，用氨水溶液除去残留在金属表面上的金属氧化物。金属表面用高能紫外线照射，以除去残留在开口中的有机物，并有助于氨水溶液除去金属氧化物。

33. 发明申请

US20070056366A1 Flow sensor 有权
标题翻译：流量传感器
公开(公告)号：US20070056366A1
公开(公告)日：2007-03-15
申请号：US11330969
申请日：2006-01-13
申请人： Noriyuki Sakuma , Naoki Yamamoto , Kenichi Takeda , Hiroshi Fukuda
发明人： Noriyuki Sakuma , Naoki Yamamoto , Kenichi Takeda , Hiroshi Fukuda
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/699 , G01P5/10
摘要： The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an α-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.
摘要翻译：本发明提供一种能够通过在绝缘膜上在半导体衬底上形成具有较高TCR的金属膜来实现高灵敏度的流量传感器的技术。作为热流体流量传感器的测量装置包括热元件，电阻温度检测器（上游侧电阻温度检测器和下游侧电阻温度检测器）以及空气的电阻温度检测器，全部由第一金属膜。第一金属膜由具有低于Ta锭的电阻率的三倍的α-Ta膜形成，并且通过溅射沉积在含有金属的非晶膜上而获得。

34. 发明授权

US07145055B2 Method of producing a mouse suitable for the engraftment, differentiation and proliferation of heterologous cells, mouse produced by this method and use of the mouse 有权
标题翻译：适用于异源细胞的移植，分化和增殖的小鼠的方法，通过该方法产生的小鼠和使用小鼠
公开(公告)号：US07145055B2
公开(公告)日：2006-12-05
申请号：US10221549
申请日：2001-10-25
申请人： Mamoru Ito , Kimio Kobayashi , Tatsutoshi Nakahata , Koichiro Tsuji , Sonoko Habu , Yoshio Koyanagi , Naoki Yamamoto , Kazuo Sugamura , Kiyoshi Ando , Tatsuji Nomura
发明人： Mamoru Ito , Kimio Kobayashi , Tatsutoshi Nakahata , Koichiro Tsuji , Sonoko Habu , Yoshio Koyanagi , Naoki Yamamoto , Kazuo Sugamura , Kiyoshi Ando , Tatsuji Nomura
IPC分类号： G01N33/00 , C12N15/01 , A01K67/02 , A01K67/027
CPC分类号： C07K16/18 , A01K67/027 , A01K67/0271 , A01K2267/03 , A01K2267/0331 , A01K2267/0337 , A61K39/00
摘要： The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor γ-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.
摘要翻译：本发明提供了适合于异源细胞的移植，分化和增殖的免疫缺陷小鼠（NOG小鼠），以及这种小鼠的制备方法。该小鼠通过用NOD / Shi小鼠回交C.B-17- scid小鼠并通过回交的小鼠进一步回交白细胞介素2受体γ链基因敲除小鼠而获得。它可用于产生人抗体并建立干细胞测定系统，肿瘤模型和病毒感染模型。

35. 发明授权

US07122469B2 Fabrication process of a semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造工艺
公开(公告)号：US07122469B2
公开(公告)日：2006-10-17
申请号：US11196293
申请日：2005-08-04
申请人： Yoshikazu Tanabe , Isamu Asano , Makoto Yoshida , Naoki Yamamoto , Masayoshi Saito , Nobuyoshi Natsuaki
发明人： Yoshikazu Tanabe , Isamu Asano , Makoto Yoshida , Naoki Yamamoto , Masayoshi Saito , Nobuyoshi Natsuaki
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/28247 , H01L21/28061 , H01L21/28176 , H01L21/32105 , H01L21/823437 , H01L21/823468 , H01L21/823828 , H01L21/823857 , H01L27/1052 , H01L27/10873 , H01L27/10894 , H01L29/4941
摘要： With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer 1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer 1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer 1A, whereby the profile of the side-wall end portions of the gate electrode is improved
摘要翻译：为了防止栅极图案化后的光氧化处理时的金属膜的氧化，同时能够控制氧化膜形成的再现性和栅侧壁端的氧化膜厚度的均匀性在使用多金属的栅极处理步骤中，通过对已在其上形成有栅极氧化膜的半导体晶片1A上淀积的具有多金属结构的栅电极材料进行构图来形成栅电极，向被加热到预定温度或附近的半导体晶片1A的主表面供给含有低浓度的水的氢气，由氢和氧通过催化作用形成的水，以选择性地氧化半导体晶片1A的主表面，从而提高了栅电极的侧壁端部的轮廓

36. 发明申请

US20060088324A1 Fixing device 有权
标题翻译：固定装置
公开(公告)号：US20060088324A1
公开(公告)日：2006-04-27
申请号：US11017660
申请日：2004-12-22
申请人： Yoshihisa Fujimoto , Masami Miyazaki , Yutaka Otsuka , Koji Takahashi , Naoki Yamamoto
发明人： Yoshihisa Fujimoto , Masami Miyazaki , Yutaka Otsuka , Koji Takahashi , Naoki Yamamoto
IPC分类号： G03G15/20
CPC分类号： G03G15/2053 , G03G15/2039
摘要： A fixing device has a fixing belt, a trembler coil for heating the fixing belt with magnetic flux, a ferrite core around which the trembler coil is wound, and a heater for heating the ferrite core. The ferrite core has a Curie temperature which is between a fixing temperature of the fixing belt and a smoking start temperature of the fixing belt. The heating of the ferrite core with the heater allows the temperature of the ferrite core to reach the Curie temperature before the temperature of the fixing belt reaches a smoking start temperature. Thereby, an excessive rise in temperature of the fixing belt is suppressed, which prevents the fixing belt from smoking and igniting.
摘要翻译：定影装置具有定影带，用于加热具有磁通量的定影带的颤音线圈，缠绕有颤音线圈的铁氧体磁芯和用于加热铁氧体磁心的加热器。铁氧体磁芯具有在定影带的定影温度和定影带的吸烟开始温度之间的居里温度。利用加热器对铁氧体磁芯的加热允许铁氧体磁芯的温度在定影带的温度达到吸烟开始温度之前达到居里温度。因此，定影带的温度过度上升被抑制，防止定影带吸烟和点燃。

37. 发明申请

US20050257237A1 Digital television broadcast signal receiver 失效
标题翻译：数字电视广播信号接收机
公开(公告)号：US20050257237A1
公开(公告)日：2005-11-17
申请号：US11116396
申请日：2005-04-28
申请人： Naoki Yamamoto
发明人： Naoki Yamamoto
IPC分类号： H04B7/08 , H04B7/10 , H04N5/44 , H04N5/50
CPC分类号： H04N5/50 , H04B7/088 , H04N5/4401 , H04N21/4263 , H04N21/42638 , H04N21/4384 , H04N21/44209
摘要： In a digital TV broadcast signal receiver connected to a multi-directional antenna called smart antenna, when a TV broadcast signal of an optional channel becomes unreceivable for any reason, it makes possible to restart displaying an image on a screen of a monitor display device, quickly. The digital TV broadcast signal receiver previously sets a plurality of optimum signal receiving direction with respect to each receivable channel with an order of priority, and switches an effective signal receiving direction of a multi-directional antenna connected thereto to one of the optimum signal receiving directions of a channel chosen by a user corresponding to the order of priority, when the TV broadcast signal of the channel is unreceivable.
摘要翻译：在连接到称为智能天线的多向天线的数字电视广播信号接收机中，当可选信道的TV广播信号由于任何原因变得不可接收时，可以重新在监视器显示设备的屏幕上显示图像，很快。数字电视广播信号接收机预先以优先级顺序设置关于每个可接收信道的多个最佳信号接收方向，并且将连接到其的多向天线的有效信号接收方向切换到最佳信号接收方向之一当频道的TV广播信号不可接收时，由与用户对应的优先级顺序选择的频道。

38. 发明申请

US20050164441A1 Semiconductor device and process for producing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050164441A1
公开(公告)日：2005-07-28
申请号：US11087612
申请日：2005-03-24
申请人： Kazuhiro Ohnishi , Naoki Yamamoto
发明人： Kazuhiro Ohnishi , Naoki Yamamoto
IPC分类号： H01L21/28 , H01L21/762 , H01L21/8238 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
CPC分类号： H01L29/4941 , H01L21/28052 , H01L21/76229 , H01L21/823835 , H01L21/823842
摘要： Process for producing a semiconductor device includes forming an insulation layer on a semiconductor substrate surface and depositing a silicon layer on the insulation layer, a reaction barrier layer such as a metal nitride layer on the first metallic layer and a second metallic layer on the barrier layer, processing a stacked structure of the silicon layer, first metallic layer, barrier layer and second metallic layer to form a gate electrode, using the gate electrode as a mask and doping an impurity into the surface of the semiconductor substrate to form active regions of the device, heat reacting the first metallic layer with the silicon layer to form a metal silicide layer between the reaction barrier layer and the silicon layer. The heat reaction process effected may be performed prior to or after the formation of the gate electrode. The metal silicide film may be a deposited film.
摘要翻译：制造半导体器件的方法包括在半导体衬底表面上形成绝缘层并在绝缘层上沉积硅层，在第一金属层上形成诸如金属氮化物层的反应势垒层和阻挡层上的第二金属层处理硅层，第一金属层，阻挡层和第二金属层的堆叠结构以形成栅电极，使用栅电极作为掩模，并将杂质掺杂到半导体衬底的表面中以形成有源区使第一金属层与硅层热反应，以在反应阻挡层和硅层之间形成金属硅化物层。所产生的热反应过程可以在形成栅电极之前或之后进行。金属硅化物膜可以是沉积膜。

39. 发明授权

US06895393B1 Electronic book distributing system by use of purchase certificate and devices therefor 有权
标题翻译：电子书分发系统使用购买凭证及其设备
公开(公告)号：US06895393B1
公开(公告)日：2005-05-17
申请号：US09410056
申请日：1999-10-01
申请人： Toru Numata , Tadashi Kuwabara , Hiroshi Shimizu , Misuzu Mochizuki , Yukinobu Tada , Naoki Yamamoto , Yutaka Igarashi , Shinichiro Fukushima , Mayumi Ueyama , Rituko Kanazawa , Maki Furui , Katsuki Ikuta
发明人： Toru Numata , Tadashi Kuwabara , Hiroshi Shimizu , Misuzu Mochizuki , Yukinobu Tada , Naoki Yamamoto , Yutaka Igarashi , Shinichiro Fukushima , Mayumi Ueyama , Rituko Kanazawa , Maki Furui , Katsuki Ikuta
IPC分类号： B65G61/00 , G06F15/00 , G06F21/00 , G06F21/10 , G06F21/33 , G06F21/34 , G06F21/62 , G06Q10/00 , G06Q30/02 , G06Q30/06 , G06Q50/00 , G09C1/00 , G06F17/60
CPC分类号： G06Q30/06 , G06Q20/1235
摘要： For changing services to readers who desires to obtain electronic books exactly or minutely, an electronic book management system 1 distributes at least electronic purchase certificates relating to books which are stocked at a bookstores owing a bookstore terminal device 2, in advance, to that bookstore terminal device 2. When buying the book(s), a reader obtains in an IC card 4 owned by her/him a purchase certificate(s) of that book(s) which she/he bought, from the bookstore terminal 2. When ordering to obtain the electronic book(s), the reader transmits the purchase certificate(s) from a reader terminal device 3 to the electronic book management system 1 through a communication network 5. The electronic book management system 1 changes over it's service when supplying the electronic book(s) to that reader depending upon the existence of the purchase certificate(s).
摘要翻译：为了向希望以正确或精确的方式获得电子书籍的读者提供服务，电子书籍管理系统1至少将与存储在书店终端设备2的书店的书籍有关的电子购买证书预先分发给该书店终端设备2。在购买书籍时，读者从书店终端2获得由他/他所拥有的IC卡4所购买的那本书的购买凭证。当订购获取电子书时，读取器通过通信网络5将购买证书从读取终端设备3发送到电子书管理系统1。电子书管理系统1根据购买凭证的存在，在向读者提供电子书时更改其服务。

40. 发明申请

US20050073051A1 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20050073051A1
公开(公告)日：2005-04-07
申请号：US10871282
申请日：2004-06-21
申请人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
发明人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
IPC分类号： H01L21/768 , H01L21/02 , H01L21/28 , H01L21/336 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L27/00 , H01L27/06 , H01L27/08 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02063 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L21/8221 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing process for a semiconductor integrated circuit device which prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The meal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.
摘要翻译：一种用于半导体集成电路器件的制造方法，其防止金属布线和硼掺杂硅插塞之间在其上形成的MOS晶体管的热处理中发生反应，并降低接触电阻上升的可能性。金属硼化物形成在金属布线上的位于层间绝缘膜的开口底部的露出的金属表面上。为了促进这种金属硼化物的形成，用氨水溶液除去残留在金属表面上的金属氧化物。用高能量紫外线照射餐面，以除去残留在开口中的有机物质，并利用氨水溶液去除金属氧化物。

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