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31. 发明授权

US09217921B2 Resist underlayer film forming composition containing silicon having sulfide bond 有权
标题翻译：含有硫化物键的硅的抗蚀剂下层膜形成组合物
公开(公告)号：US09217921B2
公开(公告)日：2015-12-22
申请号：US13375517
申请日：2010-05-28
申请人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
发明人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
IPC分类号： H01L21/312 , G03F7/11 , G03F7/075 , G03F7/09
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/091 , Y10T428/31663
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.
摘要翻译：提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成组合物; 以及使用用于光刻的下层膜形成组合物的抗蚀剂图案的形成方法。一种用于光刻的抗蚀剂下层膜形成组合物，包括：含硅原子的化合物，含有含硫原子的基团的可水解的有机硅烷，其水解产物或其水解缩合产物，其中在整个含硅原子的化合物，硫原子与硅原子的比例小于5摩尔％。可水解的有机硅烷优选为式（1）的化合物：[R a Si（R 2）3-a] b R 3，其中R 3具有式（2）的部分结构：R4-S-R5。

32. 发明授权

US09093279B2 Thin film forming composition for lithography containing titanium and silicon 有权
标题翻译：用于含钛和硅的光刻的薄膜形成组合物
公开(公告)号：US09093279B2
公开(公告)日：2015-07-28
申请号：US14131945
申请日：2012-07-20
申请人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
发明人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
IPC分类号： G03F7/26 , H01L21/033 , G03F7/40 , H01L21/311 , G03F7/075 , G03F7/09
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/40 , H01L21/31111 , H01L21/31138
摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4-a) Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4-(a′+b) Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.
摘要翻译：用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。

33. 发明授权

US08828879B2 Silicon-containing composition having sulfonamide group for forming resist underlayer film 有权
标题翻译：含有形成抗蚀剂下层膜的磺酰胺基的含硅组合物
公开(公告)号：US08828879B2
公开(公告)日：2014-09-09
申请号：US13496768
申请日：2010-09-07
申请人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
发明人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
IPC分类号： C08G77/04 , C09D183/08 , C08G77/28
CPC分类号： C08G77/04 , C08G77/28 , C09D183/08 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %.
摘要翻译：提供了可用作硬掩模的用于形成抗蚀剂下层膜的平版印刷抗蚀剂下层膜形成组合物。含有具有磺酰胺基的硅烷化合物的平版印刷抗蚀剂下层膜形成用组合物，其中，具有磺酰胺基的硅烷化合物为分子内具有磺酰胺基的水解性有机硅烷，其水解物或其水解缩合物。所述组合物包括具有磺酰胺基团的硅烷化合物和不具有磺酰胺基团的硅烷化合物，其中具有磺酰胺基团的硅烷化合物总体上以小于1摩尔％，例如0.1至0.95摩尔％的比例存在于硅烷化合物中。

34. 发明申请

US20140083301A1 BEVERAGE EXTRACTION APPARATUS 审中-公开
标题翻译：饮料提取装置
公开(公告)号：US20140083301A1
公开(公告)日：2014-03-27
申请号：US13979888
申请日：2011-08-24
申请人： Yoshihiro Nakao , Yoshiaki Yokoo , Makoto Nakajima , Hiroaki Shimizu , Hiroki Furuta , Morio Mitsuhashi
发明人： Yoshihiro Nakao , Yoshiaki Yokoo , Makoto Nakajima , Hiroaki Shimizu , Hiroki Furuta , Morio Mitsuhashi
IPC分类号： A47J31/40
CPC分类号： A47J31/44 , A23F5/262 , A47J31/407 , B65D85/8043
摘要： A roasted plant extraction apparatus is provided which is capable of selectively reducing excessive bitterness in an extract liquid obtained by water extraction from a roasted plant raw material while preserving desirable flavor ingredients and body. A beverage extraction apparatus includes a granule containing part adapted to contain granules for extraction of a beverage, a pouring device for pouring an extraction solvent into the granule containing part from a first direction, and a collecting device for collecting an extract liquid extracted by means of the extraction solvent. The granule containing part comprises a detachable restraining member for placing the granules in a substantially sealed state. The beverage extraction apparatus further comprises a rotary mechanism for rotating the granule containing part.
摘要翻译：本发明提供了一种焙烤植物提取装置，其能够选择性地减少通过从焙烤植物原料中提取水而获得的提取液中的过度的苦味，同时保留理想的风味成分和身体。一种饮料提取装置，其特征在于，包括适于容纳用于提取饮料的颗粒的颗粒容纳部，从第一方向将提取溶剂注入到所述颗粒容纳部的倾倒装置，以及收集装置，提取溶剂。颗粒容纳部分包括用于将颗粒置于基本上密封状态的可分离的约束构件。饮料提取装置还包括用于使颗粒容纳部分旋转的旋转机构。

35. 发明授权

US08419074B2 Joint structure 有权
标题翻译：联合结构
公开(公告)号：US08419074B2
公开(公告)日：2013-04-16
申请号：US13297903
申请日：2011-11-16
申请人： Shinjiro Inomata , Makoto Nakajima
发明人： Shinjiro Inomata , Makoto Nakajima
IPC分类号： F16L13/02
CPC分类号： B23K33/004 , F16L23/026 , F16L23/14 , G21C7/10 , G21C13/032 , Y02E30/39
摘要： In a joint structure, a tube member having a polygonal cross-section can be joined to a flange surface by full penetration welding with good strength margin, without imparting unreasonable force to the weld portion. The joint structure comprises a polygonal cylindrical lower guide tube joined by butt welding to a surface of a middle flange having a through-hole of the same shape as the lower guide tube, wherein at the end of the lower guide tube, within the linear portions that constitute each of the sides of the lower guide tube, there exists a weld portion welded to the surface in at least one location and an unwelded portion located separately from the weld portion, and a level difference at least as large as a distance equivalent to the weld shrinkage of the weld portion is provided between the end positions of the weld portion of the unwelded portion.
摘要翻译：在接头结构中，具有多边形横截面的管构件可以通过全面穿透焊接而具有良好的强度裕度而接合到凸缘表面，而不会对焊接部分施加不合理的力。该接合结构包括一个多边形的圆柱形下导向管，其通过对接焊接到具有与下导管相同形状的通孔的中间凸缘的表面上，其中在下导向管的端部处于直线部分构成下引导管的每个侧面，在至少一个位置处存在焊接到表面的焊接部分和与焊接部分分开定位的未焊接部分，并且至少等于相当于焊接部的焊接收缩率设置在未焊接部的焊接部的端部位置之间。

36. 发明申请

US20120052457A1 THERMAL PROCESSING APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20120052457A1
公开(公告)日：2012-03-01
申请号：US13196330
申请日：2011-08-02
申请人： Takanori Saito , Makoto Nakajima
发明人： Takanori Saito , Makoto Nakajima
IPC分类号： F27B11/00
CPC分类号： H01L21/67109 , C23C16/46 , C30B25/08 , C30B25/10 , C30B29/06 , C30B33/02 , C30B35/002
摘要： There is provided a thermal processing apparatus in which the outer shell of a vacuum insulation layer-forming structure has an increased buckling strength. The thermal processing apparatus 1 includes a cylindrical reaction tube 3, a boat 5 for holding wafers W, a heater 2 provided around the reaction tube 3, and a vacuum insulation layer-forming structure 10 provided around the heater 2. The vacuum insulation layer-forming structure 10 includes an inner shell 11 and an outer shell 12 which forms a vacuum insulation layer 10a between the outer shell 12 and the inner shell 11. The outer shell 12 is comprised of a thin plate having an undulating cross-sectional shape formed by plastic forming.
摘要翻译：提供了一种热处理装置，其中真空绝热层形成结构的外壳具有增加的屈曲强度。热处理装置1包括圆柱形反应管3，用于保持晶片W的舟形件5，设置在反应管3周围的加热器2和设置在加热器2周围的真空绝热层形成结构10.真空绝热层 - 成形结构10包括内壳11和外壳12，外壳12和外壳12在外壳12和内壳11之间形成真空绝热层10a。外壳12由具有波浪形横截面形状的薄板构成，塑料成型。

37. 发明申请

US20110287369A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP 有权
标题翻译：含阴离子基团的含硅膜的电阻膜成膜组合物
公开(公告)号：US20110287369A1
公开(公告)日：2011-11-24
申请号：US13133751
申请日：2009-12-16
申请人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
发明人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
IPC分类号： H01L21/02 , C07F7/08 , B05D3/02 , G02B5/22
CPC分类号： H01L21/3086 , C08L83/04 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/11
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R1aR2bSi(R3)4−(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R4aSi(R5)4−a (2) and a compound of Formula (3): [R6cSi(R7)3−c]2Yb (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.
摘要翻译：提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。一种用于光刻的抗蚀剂下层膜形成组合物，其包含含有阴离子基团的硅烷化合物，其中含有阴离子基团的硅烷化合物是其中含有阴离子基团的有机基团与硅原子键合的可水解的有机硅烷，并且阴离子基团形成盐结构，其水解产物或其水解缩合产物。阴离子基团可以是羧酸阴离子，酚盐阴离子，磺酸阴离子或膦酸阴离子。可水解的有机硅烷可以是式（1）的化合物：R1aR2bSi（R3）4-（a + b）（1）。一种组合物，其包含式（1）的可水解有机硅烷和至少一种选自式（2）的化合物：R4aSi（R5）4-a（2）的化合物和式（3）：[R6cSi（R7）3-c] 2Yb（3）; 该混合物的水解产物; 或该混合物的水解缩合产物。

38. 发明申请

US20100304305A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP 有权
标题翻译：含有含氮含量的聚合物的耐下层膜形成组合物
公开(公告)号：US20100304305A1
公开(公告)日：2010-12-02
申请号：US12676687
申请日：2008-09-10
申请人： Makoto Nakajima , Wataru Shibayama , Yuta Kanno
发明人： Makoto Nakajima , Wataru Shibayama , Yuta Kanno
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091 , G03F7/0752
摘要： There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): where X1 is a group of Formula (2), Formula (3), Formula (4) or Formula (4-1): and a solvent. The polymer may contain, besides the partial structure of Formula (1), a partial structure of Formula (5): (R1)a(R3)bSi(O—)4−(a+b) Formula (5) and/or a partial structure of Formula (6): [(R4)cSi(O—)3−c]2Y Formula (6).
摘要翻译：提供了一种用于光刻的抗蚀剂下层膜，其不与光致抗蚀剂混合并且具有比光致抗蚀剂更高的干蚀刻速率，以及用于形成下层膜的抗蚀剂下层膜形成组合物。 1，一种含有式（1）部分结构的聚合物：其中X1是式（2），式（3），式（4）或式（4-1）的基团：和溶剂。除了式（1）的部分结构之外，聚合物可以包含式（5）的部分结构：（R1）a（R3）bSi（O-）4-（a + b）式（5）和/或式（6）的部分结构：[（R4）cSi（O-）3-c] 2Y式（6）。

39. 发明申请

US20100091929A1 STRUCTURE FOR SUPPRESSING FLOW VIBRATION OF INSTRUMENTATION GUIDE TUBE 有权
标题翻译：用于抑制仪表导管流动振动的结构
公开(公告)号：US20100091929A1
公开(公告)日：2010-04-15
申请号：US12527484
申请日：2009-02-22
申请人： Nobuki Uda , Shigeyuki Watanabe , Kazuo Hirota , Hideyuki Sakata , Hideyuki Morita , Makoto Nakajima , Chikara Kurimura , Toshio Ichikawa
发明人： Nobuki Uda , Shigeyuki Watanabe , Kazuo Hirota , Hideyuki Sakata , Hideyuki Morita , Makoto Nakajima , Chikara Kurimura , Toshio Ichikawa
IPC分类号： G21C17/10
CPC分类号： G21C17/10 , G21C3/322 , G21C17/08
摘要： An upper hole 37A and a lower hole 37B are provided at two positions, namely, upper and lower portions, of a side surface of a guide tube 27, and a thimble tube 22 is pressed against an inner circumferential surface of the guide tube 27, by a differential pressure between coolant inside and outside the upper hole 37A and the lower hole 37B. It is preferable that an upper pressure adjustment hole and a lower pressure adjustment hole are provided at two positions, namely, upper and lower portions, of a side surface of an upper core support column 21, and a coolant flowing into the guide tube from an upper end of the guide tube flows out to the outside from inside the guide tube through a gap between the thimble tube and the upper hole, and also flows out to the outside from inside the upper core support column through the upper pressure adjustment hole, and a coolant flowing into the guide tube from a lower end of the guide tube flows out to the outside from inside the guide tube through a gap between the thimble tube and the lower hole, and also flows out to the outside from inside the upper core support column through the lower pressure adjustment hole.
摘要翻译：在引导管27的侧面的两个位置，即上下部分设置有上孔37A和下孔37B，并且将套管22压靠在引导管27的内周面上，通过上部孔37A和下部孔37B的内部和外部的冷却剂之间的压力差。优选的是，上压力调节孔和下压力调节孔设置在上芯支撑柱21的侧表面的两个位置，即上部和下部，以及从上部芯支撑柱21的侧表面流入导管的冷却剂引导管的上端通过引导管和上孔之间的间隙从导管的内部流出到外部，并且还通过上压力调节孔从上芯支撑柱的内部流出到外部，并且从引导管的下端流入引导管的冷却剂通过引导管和下孔之间的间隙从引导管的内部流出到外部，并且还从上部芯支撑体内部流出到外部柱通过下压力调节孔。

40. 发明授权

US07432475B2 Vertical heat treatment device and method controlling the same 有权
标题翻译：立式热处理装置及其控制方法
公开(公告)号：US07432475B2
公开(公告)日：2008-10-07
申请号：US10584258
申请日：2004-12-22
申请人： Makoto Nakajima , Takanori Saito , Tsuyoshi Takizawa , Manabu Honma
发明人： Makoto Nakajima , Takanori Saito , Tsuyoshi Takizawa , Manabu Honma
IPC分类号： F27B5/14
CPC分类号： F27B17/0025 , F27B5/04 , F27B5/18
摘要： A vertical heat processing apparatus includes a process chamber (5) defining a process field (A1) configured to accommodate a plurality of target substrates (W) supported at intervals in a vertical direction. The apparatus further includes a heating furnace (8) surrounding the process chamber (5) and including an electric heater (15), and an electric blower (16) configured to send a cooling gas into the heating furnace (8). A control section (22) executes, in order to converge the process field (A1) to a target temperature, performing power feeding to the heater (15) to heat up the process field (A1) to a predetermined temperature immediately below the target temperature, and at a time point when the process field (A1) reaches the predetermined temperature, decreasing the power feeding to the heater (15), and supplying the cooling gas from the blower (16) to forcibly cool the process field (A1).
摘要翻译：垂直加热设备包括一个处理室（5），该处理室（5）限定一个处理场（A 1），该处理区域被配置为容纳在垂直方向间隔地支撑的多个目标衬底（W）。该装置还包括围绕处理室（5）并包括电加热器（15）的加热炉（8）和构造成将冷却气体送入加热炉（8）的电动鼓风机（16）。控制部（22）为了将处理场（A 1）收敛到目标温度，执行向加热器（15）供电以将处理场（A 1）加热至紧接在目标温度，并且当处理场（A 1）达到预定温度的时间点，减少对加热器（15）的供电，并且从鼓风机（16）供应冷却气体以强制冷却过程场（ A 1）。

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