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31. 发明授权

US07803521B2 Photoresist compositions and process for multiple exposures with multiple layer photoresist systems 失效
标题翻译：光刻胶组合物和多层光刻胶系统的多次曝光工艺
公开(公告)号：US07803521B2
公开(公告)日：2010-09-28
申请号：US11942062
申请日：2007-11-19
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/30
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译：光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

32. 发明申请

US20090286180A1 FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 有权
标题翻译：用于光刻应用的熔融芳构结构和方法
公开(公告)号：US20090286180A1
公开(公告)日：2009-11-19
申请号：US12508652
申请日：2009-07-24
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

33. 发明授权

US07566527B2 Fused aromatic structures and methods for photolithographic applications 失效
标题翻译：熔融芳族结构和光刻应用的方法
公开(公告)号：US07566527B2
公开(公告)日：2009-07-28
申请号：US11769089
申请日：2007-06-27
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

34. 发明申请

US20090176174A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS 有权
标题翻译：多次曝光光刻方法和光电复合材料
公开(公告)号：US20090176174A1
公开(公告)日：2009-07-09
申请号：US11970761
申请日：2008-01-08
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：方法和组成。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

35. 发明申请

US20090155718A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
公开(公告)号：US20090155718A1
公开(公告)日：2009-06-18
申请号：US11955451
申请日：2007-12-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

36. 发明授权

US08617791B2 Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same 有权
公开(公告)号：US08617791B2
公开(公告)日：2013-12-31
申请号：US13614561
申请日：2012-09-13
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/028 , G03F7/26 , C07C309/06 , C07C309/26
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

37. 发明申请

US20130017490A1 FLUORINE-FREE FUSED RING HETEROAROMATIC PHOTOACID GENERATORS AND RESIST COMPOSITIONS CONTAINING THE SAME 有权
公开(公告)号：US20130017490A1
公开(公告)日：2013-01-17
申请号：US13617623
申请日：2012-09-14
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： C07D333/62 , G03F7/20 , C07D277/76 , G03F7/027
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

38. 发明申请

US20080026315A1 FLUORINATED HALF ESTER OF MALEIC ANHYDRIDE POLYMERS FOR DRY 193 NM TOP ANTIREFLECTIVE COATING APPLICATION 失效
标题翻译：用于干燥193 NM顶级抗反射涂层应用的马来酸酐聚合物的氟化半酯
公开(公告)号：US20080026315A1
公开(公告)日：2008-01-31
申请号：US11425529
申请日：2006-06-21
申请人： Wu-Song S. Huang , Wenjie Li , Pushkara R. Varanasi
发明人： Wu-Song S. Huang , Wenjie Li , Pushkara R. Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/0046 , G03F7/0752 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了适合用作193nm光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液中，并且在193nm具有低折射率。本发明的组合物包含具有主链和氟化半酯部分的水溶性基团可溶性聚合物。氟化半酯部分是从骨架侧挂。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

39. 发明授权

US07235342B2 Negative photoresist composition including non-crosslinking chemistry 有权
标题翻译：负光致抗蚀剂组合物包括非交联化学
公开(公告)号：US07235342B2
公开(公告)日：2007-06-26
申请号：US10766058
申请日：2004-01-28
申请人： Wenjie Li , Pushkara R. Varanasi
发明人： Wenjie Li , Pushkara R. Varanasi
IPC分类号： G03F7/038 , G03F7/30
CPC分类号： G03F7/0382 , G03F7/0046 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/128
摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a hydroxy-containing additive; and a resist polymer derived from at least one first monomer. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The hydroxy-containing additive has the structure of Q—OH, where Q may include one or more cyclic structures. Q—OH may have a primary alcohol structure. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.
摘要翻译：负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。组合物包括：辐射敏感酸发生剂; 含羟基的添加剂; 和衍生自至少一种第一单体的抗蚀剂聚合物。抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。含羟基的添加剂具有Q-OH的结构，其中Q可以包括一个或多个环状结构。 Q-OH可以具有伯醇结构。酸产生器适于在暴露于辐射时产生酸。抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。

40. 发明授权

US08871429B2 Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same 有权
公开(公告)号：US08871429B2
公开(公告)日：2014-10-28
申请号：US13617781
申请日：2012-09-14
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028 , G03F7/26 , C07C309/25 , C07C309/26 , C07D277/62 , G03F7/029 , C07D209/04 , G03F7/039 , G03F7/038 , C07D261/20 , C07D307/82
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

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