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31. 发明申请

US20110068402A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管及其生产薄膜晶体管的方法
公开(公告)号：US20110068402A1
公开(公告)日：2011-03-24
申请号：US12881641
申请日：2010-09-14
申请人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L23/53238 , C23C14/0057 , C23C14/185 , H01L21/2855 , H01L21/76841 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.
摘要翻译：提供即使暴露于氢等离子体时也不会剥离的金属布线膜。金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

32. 发明申请

US20110048927A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20110048927A1
公开(公告)日：2011-03-03
申请号：US12991800
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3408 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： An inexpensive sputtering apparatus of simple construction is provided in which a film can be formed with good coating characteristics relative to each of micropores of high aspect ratio. The sputtering apparatus has: a target lying opposite to a substrate W which is disposed inside a vacuum chamber; a magnet assembly which generates a tunnel-shaped magnetic field in front of a sputtering surface of the target; a gas introduction means which introduces a sputtering gas into the vacuum chamber; and a sputtering power supply which charges negative potential to the target. There are provided magnetic field generating means to generate a vertical magnetic field of such a nature that vertical lines of magnetic force M pass through a sputtering surface and through an entire surface of the substrate at a predetermined distance from one another.
摘要翻译：提供一种简单结构的廉价的溅射装置，其中相对于每个高纵横比的微孔，可以形成具有良好涂层特性的膜。溅射装置具有：设置在真空室内的与基板W相对的靶; 磁体组件，其在目标的溅射表面的前方产生隧道状磁场; 气体引入装置，其将溅射气体引入真空室; 以及向目标物体负电荷的溅射电源。提供了用于产生垂直磁场的磁场产生装置，其特征在于磁力M的垂直线通过溅射表面并穿过基板的整个表面彼此预定的距离。

33. 发明授权

US08796142B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08796142B2
公开(公告)日：2014-08-05
申请号：US11885345
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
摘要翻译：通过同时引入由具有以下结构的配位配体的元素钽（Ta）的配位化合物组成的原料气体，形成富含钽原子的氮化钽膜：N =（R，R'）（其中，R和R'各自代表具有1至6个碳原子的烷基）和NH 3气体进入成膜室; 使原料气与NH 3气反应; 在基材上形成具有Ta-NH 3的还原化合物; 并将含氢原子的气体引入到室中以形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N对Cu膜具有足够高的粘附性，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得膜中，以进一步用钽来富集膜。

34. 发明授权

US08733734B2 Gate valve 有权
标题翻译：闸阀
公开(公告)号：US08733734B2
公开(公告)日：2014-05-27
申请号：US13393804
申请日：2010-09-03
申请人： Kyuzo Nakamura , Kouji Shibayama , Shinichi Wada , Seiya Sakoda
发明人： Kyuzo Nakamura , Kouji Shibayama , Shinichi Wada , Seiya Sakoda
IPC分类号： F16K25/00
CPC分类号： F16K3/10 , F16K1/2085 , F16K3/188
摘要： A gate valve includes: a valve box; a support body disposed inside a hollow portion; a valve plate including a fixed valving section, a movable valving section sliding in a direction in which a flow passage is extended, a first peripheral region; and a second peripheral region; a first biasing section disposed at the first peripheral region, allowing the movable valving section to move toward a first opening portion, allowing the movable valving section to come into contact with an inner surface, pressing the movable valving section onto the inner surface, and closing the flow passage; and a second biasing section disposed at the second peripheral region, allowing the movable valving section to move toward a second opening portion, and releasing the flow passage by separating the movable valving section from the inner surface.
摘要翻译：闸阀包括：阀箱; 设置在中空部内的支撑体; 阀板，包括固定阀部分，沿流动通道延伸的方向滑动的可动阀部分，第一周边区域; 和第二周边区域; 第一偏压部，设置在第一周边区域，允许可动阀部朝向第一开口部移动，允许可动阀部与内表面接触，将可动阀部压入内表面，闭合流路; 以及第二偏压部，其设置在所述第二周边区域，允许所述可动阀部朝向第二开口部移动，并且通过将所述可动阀部从所述内表面分离来释放所述流路。

35. 发明申请

US20120015473A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM, AND METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置，光电转换装置制造系统及使用光电转换装置制造系统的方法
公开(公告)号：US20120015473A1
公开(公告)日：2012-01-19
申请号：US13146624
申请日：2010-01-29
申请人： Hiroto Uchida , Tetsushi Fujinaga , Masafumi Wakai , Tadamasa Kobayashi , Yoshinobu Ue , Kyuzo Nakamura , Shin Asari , Kazuya Saito , Koichi Matsumoto , Yasuo Shimizu , Katsuhiko Mori
发明人： Hiroto Uchida , Tetsushi Fujinaga , Masafumi Wakai , Tadamasa Kobayashi , Yoshinobu Ue , Kyuzo Nakamura , Shin Asari , Kazuya Saito , Koichi Matsumoto , Yasuo Shimizu , Katsuhiko Mori
IPC分类号： H01L31/0352
CPC分类号： C23C16/54 , C23C16/24 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.
摘要翻译：光电转换装置的制造方法制造光电转换装置，其中第一光电转换单元和第二光电转换单元依次层叠在形成于基板上的透明导电膜上。该方法包括：在多个第一等离子体CVD反应室中形成第一p型半导体层，第一i型半导体层，第一n型半导体层和第二p型半导体层; 将第二p型半导体层暴露于空气气氛中; 在形成第二i型半导体层之前，将第二等离子体CVD反应室内的p型杂质气体供给; 在第二等离子体CVD反应室中在暴露于空气气氛的第二p型半导体层上形成第二i型半导体层; 以及在第二i型半导体层上形成第二n型半导体层。

36. 发明申请

US20110192047A1 FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD 有权
标题翻译：冷冻干燥设备和冷冻干燥方法
公开(公告)号：US20110192047A1
公开(公告)日：2011-08-11
申请号：US13003002
申请日：2009-07-08
申请人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takashi Hanamoto
发明人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takashi Hanamoto
IPC分类号： F26B5/06 , F26B5/04
CPC分类号： A23L3/44 , F26B5/065
摘要： [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles.[Solving Means] The freeze-drying apparatus 100 includes a freezing chamber 10 into which a raw material fluid F is injected. During the injection of the raw material fluid F, after the injection of the raw material fluid F, or for a time period covering the start to the termination of the injection of the raw material fluid F, a shelf 16 is vibrated in a horizontal direction due to an actuation of vibration generators 31. With this, the frozen particles deposited on the shelf 16 are evenly diffused on the shelf 16 in such a manner that a deposition thickness thereof becomes smaller or a single layer thereof is formed. With this, a freezing efficiency and the drying efficiency of individual particles are promoted.
摘要翻译：提供能够提高冷冻颗粒的干燥效率的冷冻干燥装置和冷冻干燥方法。 [解决方案]冷冻干燥装置100包括注入原料流体F的冷冻室10。在注入原料流体F的过程中，在注入原料流体F之后，或者在原料流体F的注入开始至结束的期间，搁架16在水平方向上振动由此，沉积在搁架16上的冻结颗粒以沉积厚度变小或形成单层的方式均匀地扩散到搁板16上。由此，促进了各个颗粒的冷冻效率和干燥效率。

37. 发明申请

US20110189817A1 MANUFACTURING METHOD FOR SOLAR CELL 有权
标题翻译：太阳能电池的制造方法
公开(公告)号：US20110189817A1
公开(公告)日：2011-08-04
申请号：US13124529
申请日：2009-10-15
申请人： Hirohisa Takahashi , Satoru Ishibashi , Kyuzo Nakamura
发明人： Hirohisa Takahashi , Satoru Ishibashi , Kyuzo Nakamura
IPC分类号： H01L31/18
CPC分类号： H01L31/02366 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask.
摘要翻译：一种太阳能电池的制造方法，其特征在于，包括在入射光侧提取电极的上部电极，所述上部电极包括透明导电膜，所述透明导电膜的基本结构元素为铟（In），锌（Zn）和锡（Sn），所述制造方法包括：步骤A，其使用湿式蚀刻方法在透明基板的正面上形成纹理，所述透明导电膜形成在所述透明基板上，其中，在所述工序如图A所示，当形成纹理时，在透明基板上形成金属薄膜，以金属薄膜为掩模进行各向异性蚀刻。

38. 发明申请

US20110132259A1 ELECTROSTATIC CHUCK AND VACUUM PROCESSING APPARATUS 有权
标题翻译：静电切割机和真空加工设备
公开(公告)号：US20110132259A1
公开(公告)日：2011-06-09
申请号：US13057786
申请日：2009-08-17
申请人： Tadayuki Satou , Tadashi Oka , Kyuzo Nakamura
发明人： Tadayuki Satou , Tadashi Oka , Kyuzo Nakamura
IPC分类号： B05C13/00 , H01L21/687
CPC分类号： H02N13/00 , H01L21/6833
摘要： An electrostatic chuck is provided which is arranged that, at the time of performing processing treatments of irradiating light to a to-be-processed substrate while holding the translucent to-be-processed substrate, the to-be-processed substrate can surely be held even in case the attraction force lowers due to photoelectric effect. An electrostatic chuck has a chuck plate made of a dielectric material, and a first electrode and a second electrode, both electrodes being disposed in the chuck plate. A voltage is applied between the first and the second electrodes to thereby attract the to-be-processed substrate S to the surface of the chuck plate. The electrostatic chuck has, on part of the surface of the chuck plate, a substrate holding section 64 which is made of an adhesive sheet and the like having an adhesive force with respect to the to-be-processed substrate.
摘要翻译：设置静电卡盘，其配置为：在保持半透明的被处理基板的同时对被处理基板进行照射光的处理处理时，能够可靠地保持被处理基板即使吸引力由于光电效应而降低。静电卡盘具有由介电材料制成的卡盘板，第一电极和第二电极，两个电极设置在卡盘板中。在第一和第二电极之间施加电压，从而将被处理基板S吸引到卡盘板的表面。静电吸盘在卡盘的表面的一部分上具有由相对于被处理基板具有粘合力的粘合片等制成的基板保持部64。

39. 发明申请

US20100193131A1 ASHING DEVICE 审中-公开
标题翻译： ASHING设备
公开(公告)号：US20100193131A1
公开(公告)日：2010-08-05
申请号：US12443912
申请日：2008-10-29
申请人： Masahisa Ueda , Takashi Kurimoto , Kyuzo Nakamura , Koukou Suu , Toshiya Yogo , Kazushige Komatsu , Nobusuke Tachibana
发明人： Masahisa Ueda , Takashi Kurimoto , Kyuzo Nakamura , Koukou Suu , Toshiya Yogo , Kazushige Komatsu , Nobusuke Tachibana
IPC分类号： C23F1/08
CPC分类号： H01L21/02068 , G03F7/427 , H01J37/32192 , H01J37/32467 , H01J37/32477 , H01L21/31138
摘要： An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.
摘要翻译：灰化装置可防止灰度随时间变化。灰化装置在包括处理室中的暴露金属的基板上灰化有机材料。灰化装置包括形成在处理室中并通过其提供给处理室的活性物质通过的路径。该路径由其上由活性物质从衬底散射的金属可收集的表面限定，其表面被形成以暴露同一种类的金属。

40. 发明申请

US20100112230A1 COATED FILM FORMING METHOD 有权
标题翻译：涂膜成型方法
公开(公告)号：US20100112230A1
公开(公告)日：2010-05-06
申请号：US12641721
申请日：2009-12-18
申请人： Takahiro Miyata , Masao Murata , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura , Atsushi Kira , Kou Fuwa , Ai Tanaka , Tooru Okuno , Susumu Sakio
发明人： Takahiro Miyata , Masao Murata , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura , Atsushi Kira , Kou Fuwa , Ai Tanaka , Tooru Okuno , Susumu Sakio
IPC分类号： B05D1/02
CPC分类号： B41J2/155
摘要： A coated film with no observable streak is formed. The landing positions of a first discharge liquid discharged through a first printing head and the landing positions of a second discharge liquid discharged through a second printing head are disposed in a mixed manner in an area on a substrate where the first printing head and the second printing head overlap. Which discharge liquids are to be landed is determined according to random numbers. Since a coated film which is formed with the first and second discharge liquids in a mixed manner is disposed between a coated film formed with the first discharge liquids and a coated film formed with the second discharge liquids, a boundary is obscured and no streak appears.
摘要翻译：形成无可观察条纹的涂膜。通过第一打印头排出的第一排出液体的着陆位置和通过第二打印头排出的第二排出液体的着陆位置以混合的方式设置在基板上的第一印刷头和第二印刷区域头重叠。哪些排放液体将根据随机数来确定。由于在与第一排出液体形成的涂膜和形成有第二排出液体的涂膜之间设置以混合形成有第一排出液体和第二排出液体的涂膜，因此边界被遮蔽并且不出现条纹。

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