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1. 发明申请

US20110192047A1 FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD 有权
标题翻译：冷冻干燥设备和冷冻干燥方法
公开(公告)号：US20110192047A1
公开(公告)日：2011-08-11
申请号：US13003002
申请日：2009-07-08
申请人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takashi Hanamoto
发明人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takashi Hanamoto
IPC分类号： F26B5/06 , F26B5/04
CPC分类号： A23L3/44 , F26B5/065
摘要： [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles.[Solving Means] The freeze-drying apparatus 100 includes a freezing chamber 10 into which a raw material fluid F is injected. During the injection of the raw material fluid F, after the injection of the raw material fluid F, or for a time period covering the start to the termination of the injection of the raw material fluid F, a shelf 16 is vibrated in a horizontal direction due to an actuation of vibration generators 31. With this, the frozen particles deposited on the shelf 16 are evenly diffused on the shelf 16 in such a manner that a deposition thickness thereof becomes smaller or a single layer thereof is formed. With this, a freezing efficiency and the drying efficiency of individual particles are promoted.
摘要翻译：提供能够提高冷冻颗粒的干燥效率的冷冻干燥装置和冷冻干燥方法。 [解决方案]冷冻干燥装置100包括注入原料流体F的冷冻室10。在注入原料流体F的过程中，在注入原料流体F之后，或者在原料流体F的注入开始至结束的期间，搁架16在水平方向上振动由此，沉积在搁架16上的冻结颗粒以沉积厚度变小或形成单层的方式均匀地扩散到搁板16上。由此，促进了各个颗粒的冷冻效率和干燥效率。

2. 发明授权

US08978268B2 Freeze-drying apparatus and freeze-drying method 有权
标题翻译：冷冻干燥装置和冷冻干燥法
公开(公告)号：US08978268B2
公开(公告)日：2015-03-17
申请号：US13003002
申请日：2009-07-08
申请人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takashi Hanamoto
发明人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takashi Hanamoto
IPC分类号： F26B5/06 , F26B9/00 , A23L3/44
CPC分类号： A23L3/44 , F26B5/065
摘要： [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles.[Solving Means] The freeze-drying apparatus 100 includes a freezing chamber 10 into which a raw material fluid F is injected. During the injection of the raw material fluid F, after the injection of the raw material fluid F, or for a time period covering the start to the termination of the injection of the raw material fluid F, a shelf 16 is vibrated in a horizontal direction due to an actuation of vibration generators 31. With this, the frozen particles deposited on the shelf 16 are evenly diffused on the shelf 16 in such a manner that a deposition thickness thereof becomes smaller or a single layer thereof is formed. With this, a freezing efficiency and the drying efficiency of individual particles are promoted.
摘要翻译：提供能够提高冷冻颗粒的干燥效率的冷冻干燥装置和冷冻干燥方法。 [解决方案]冷冻干燥装置100包括注入原料流体F的冷冻室10。在注入原料流体F的过程中，在注入原料流体F之后，或者在原料流体F的注入开始至结束的期间，搁架16在水平方向上振动由此，沉积在搁架16上的冻结颗粒以沉积厚度变小或形成单层的方式均匀地扩散到搁板16上。由此，促进了各个颗粒的冷冻效率和干燥效率。

3. 发明授权

US08341854B2 Vacuum freeze-drying apparatus and method for vacuum freeze drying 有权
标题翻译：真空冷冻干燥装置及真空冷冻干燥方法
公开(公告)号：US08341854B2
公开(公告)日：2013-01-01
申请号：US12635046
申请日：2009-12-10
申请人： Seiji Ogata , Kyuzo Nakamura , Katsuhiko Itou , Takashi Hanamoto , Masaki Itou
发明人： Seiji Ogata , Kyuzo Nakamura , Katsuhiko Itou , Takashi Hanamoto , Masaki Itou
IPC分类号： F26B5/06 , F26B13/30
CPC分类号： F26B5/065
摘要： A vacuum freeze-drying apparatus capable of rapid drying is provided. A cold trap for drying, which is arranged inside a drying chamber, is set to a low temperature of −70 degrees Celsius or below, and heat is supplied to frozen particles on a conveyor belt to a degree such that the frozen particles do not melt. The amount of the liquid component evaporating from the frozen particles increases, and the amount of the liquid component entering the frozen particles decreases so that the time for drying the frozen particles is shortened.
摘要翻译：提供能够快速干燥的真空冷冻干燥装置。设置在干燥室内的用于干燥的冷阱设定在-70摄氏度或更低的低温，并且将热量输送到输送带上的冷冻颗粒，使得冷冻颗粒不熔化。从冷冻颗粒蒸发的液体成分的量增加，进入冷冻颗粒的液体成分的量减少，从而缩短了冷冻颗粒的干燥时间。

4. 发明申请

US20100107437A1 VACUUM FREEZE-DRYING APPARATUS AND METHOD FOR VACUUM FREEZE DRYING 有权
标题翻译：真空冷冻干燥装置和真空冷冻干燥方法
公开(公告)号：US20100107437A1
公开(公告)日：2010-05-06
申请号：US12635046
申请日：2009-12-10
申请人： Seiji Ogata , Kyuzo Nakamura , Katsuhiko Itou , Takashi Hanamoto , Masaki Itou
发明人： Seiji Ogata , Kyuzo Nakamura , Katsuhiko Itou , Takashi Hanamoto , Masaki Itou
IPC分类号： F26B5/06 , F26B13/30
CPC分类号： F26B5/065
摘要： A vacuum freeze-drying apparatus capable of rapid drying is provided. A cold trap for drying, which is arranged inside a drying chamber, is set to a low temperature of −70 degrees Celsius or below, and heat is supplied to frozen particles on a conveyor belt to a degree such that the frozen particles do not melt. The amount of the liquid component evaporating from the frozen particles increases, and the amount of the liquid component entering the frozen particles decreases so that the time for drying the frozen particles is shortened.
摘要翻译：提供能够快速干燥的真空冷冻干燥装置。设置在干燥室内的用于干燥的冷阱设定在-70摄氏度或更低的低温，并且将热量输送到输送带上的冷冻颗粒，使得冷冻颗粒不熔化。从冷冻颗粒蒸发的液体成分的量增加，进入冷冻颗粒的液体成分的量减少，从而缩短了冷冻颗粒的干燥时间。

5. 发明申请

US20110113644A1 FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD 审中-公开
标题翻译：冷冻干燥设备和冷冻干燥方法
公开(公告)号：US20110113644A1
公开(公告)日：2011-05-19
申请号：US13002994
申请日：2009-07-08
申请人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takao Kinoshita
发明人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takao Kinoshita
IPC分类号： F26B5/06 , F26B5/04
CPC分类号： A23L3/44 , F26B5/065
摘要： [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a collection rate of a raw material without a need for providing a member such as a baffle plate or the like.[Solving Means] The freeze-drying apparatus 100 includes: a container 4 to store a raw material fluid F; a freezing chamber 10 being a vacuum chamber; a vacuum pump 1 to exhaust the freezing chamber 10; and an injection mechanism 25 to inject the raw material fluid F stored in the container 4 into the freezing chamber 10. The cold trap 20 is arranged within the freezing chamber 10, and hence a phenomenon that the raw material is discharged to the outside of the vacuum chamber together with a vapor as in the past can be prevented. With this, the collection rate of the raw material can be increased. Further, it becomes unnecessary to provide the baffle plate or the like for preventing the phenomenon in vicinity of an exhaust port of the vacuum chamber.
摘要翻译：本发明提供能够提高原料收集率而不需要设置挡板等构件的冷冻干燥装置和冷冻干燥方法。 [解决方案]冷冻干燥装置100包括：储存原料流体F的容器4; 冷冻室10是真空室; 用于排出冷冻室10的真空泵1; 以及将存储在容器4中的原料流体F注入到冷冻室10中的注入机构25.冷阱20配置在冷冻室10内，因此将原料排出到可以防止真空室与过去的蒸气一起。由此，可以提高原料的收集率。此外，不需要设置用于防止真空室的排气口附近的现象的挡板等。

6. 发明申请

US20110113643A1 FREEZE-DRYING APPARATUS 审中-公开
标题翻译：冷冻干燥装置
公开(公告)号：US20110113643A1
公开(公告)日：2011-05-19
申请号：US13003005
申请日：2009-07-08
申请人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takao Kinoshita
发明人： Masaki Itou , Kyuzo Nakamura , Takeo Kato , Katsuhiko Itou , Takao Kinoshita
IPC分类号： F26B13/30
CPC分类号： A23L3/44 , F26B5/065 , F26B21/004
摘要： [Object] To provide a freeze-drying apparatus capable of achieving an increase of a processing capacity without causing a variation of a particle diameter.[Solving Means] A freeze-drying apparatus 100 according to an embodiment of the present invention includes: a freezing chamber 10 forming a vacuum chamber; and an injector 25. The injector 25 includes a tube member 29 provided to the vacuum chamber, and a nozzle 9 including a plurality of injection holes 92 open to an inside of the tube member 29. The injector 25 injects a raw material fluid F, which is fed to the tube member 29, from the nozzle 9 into the vacuum chamber. The respective injection holes 92 are each formed so as to be open to the inside of the tube member 29, and hence the raw material fluid F is injected through the respective injection holes 92 at the same injection pressure. With this, it is possible to achieve the increase of the processing capacity without causing the variation of the particle diameter.
摘要翻译：本发明提供能够在不引起粒径变化的情况下实现加工能力的提高的冷冻干燥装置。 [解决方案]根据本发明的实施方式的冷冻干燥装置100包括：形成真空室的冷冻室10; 和喷射器25.喷射器25包括设置在真空室中的管件29和一个喷嘴9，喷嘴9包括通向管件29内部的多个喷射孔92.喷射器25喷射原料流体F，其从喷嘴9被供给到管构件29进入真空室。各喷射孔92分别形成为向管状部件29的内侧开口，因此原料流体F以相同的喷射压力通过各喷射孔92喷射。由此，可以在不引起粒径变化的情况下实现加工能力的提高。

7. 发明授权

US08652970B2 Vacuum processing method and vacuum processing apparatus 有权
标题翻译：真空加工方法和真空处理装置
公开(公告)号：US08652970B2
公开(公告)日：2014-02-18
申请号：US13133514
申请日：2010-03-24
申请人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
发明人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68
CPC分类号： H01L21/31116 , H01L21/02046 , H01L21/02063 , H01L21/67069
摘要： A processing gas is introduced to remove an oxide film on the surface of a silicon substrate 5. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NH3 gas, N2 gas and NF3 gas are introduced, allowing NHxFy to act on the oxidized surface of the silicon substrate 5, thereby forming (NH4)2SiF6. The resulting (NH4)2SiF6 is sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate 5.
摘要翻译：引入处理气体以除去硅衬底5的表面上的氧化物膜.F自由基被允许作用在硅衬底的表面上以蚀刻硅层。然后，引入NH 3气体，N 2气体和NF 3气体，使NH x F y作用于硅衬底5的氧化表面，由此形成（NH 4）2 SiF 6。将所得的（NH 4）2 SiF 6升华以除去硅衬底5的表面上的副产物（SiOF，SiOH）。

8. 发明授权

US08158198B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08158198B2
公开(公告)日：2012-04-17
申请号：US11885399
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N =（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

9. 发明申请

US20110068402A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管及其生产薄膜晶体管的方法
公开(公告)号：US20110068402A1
公开(公告)日：2011-03-24
申请号：US12881641
申请日：2010-09-14
申请人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L23/53238 , C23C14/0057 , C23C14/185 , H01L21/2855 , H01L21/76841 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.
摘要翻译：提供即使暴露于氢等离子体时也不会剥离的金属布线膜。金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

10. 发明申请

US20110048927A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20110048927A1
公开(公告)日：2011-03-03
申请号：US12991800
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3408 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： An inexpensive sputtering apparatus of simple construction is provided in which a film can be formed with good coating characteristics relative to each of micropores of high aspect ratio. The sputtering apparatus has: a target lying opposite to a substrate W which is disposed inside a vacuum chamber; a magnet assembly which generates a tunnel-shaped magnetic field in front of a sputtering surface of the target; a gas introduction means which introduces a sputtering gas into the vacuum chamber; and a sputtering power supply which charges negative potential to the target. There are provided magnetic field generating means to generate a vertical magnetic field of such a nature that vertical lines of magnetic force M pass through a sputtering surface and through an entire surface of the substrate at a predetermined distance from one another.
摘要翻译：提供一种简单结构的廉价的溅射装置，其中相对于每个高纵横比的微孔，可以形成具有良好涂层特性的膜。溅射装置具有：设置在真空室内的与基板W相对的靶; 磁体组件，其在目标的溅射表面的前方产生隧道状磁场; 气体引入装置，其将溅射气体引入真空室; 以及向目标物体负电荷的溅射电源。提供了用于产生垂直磁场的磁场产生装置，其特征在于磁力M的垂直线通过溅射表面并穿过基板的整个表面彼此预定的距离。

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