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31. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

32. 发明申请

US20120318023A1 METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20120318023A1
公开(公告)日：2012-12-20
申请号：US13524203
申请日：2012-06-15
申请人： Akihisa SHIMOMURA
发明人： Akihisa SHIMOMURA
IPC分类号： C03B23/203
CPC分类号： C03C27/06
摘要： A method of manufacturing a sealed structure with excellent hermeticity and a method of manufacturing a light-emitting device sealed with the sealed structure. In the methods of manufacturing a sealed structure and a light-emitting device using a glass frit layer, a first step of forming a buffer layer for preventing a crack generated in a substrate and the glass frit layer by laser light irradiation, a second step of forming the glass frit layer to overlap with the buffer layer over the substrate, and a third step of welding the substrates by irradiating the glass frit layer or the buffer layer with laser light are performed, whereby a sealed structure with high hermeticity and a reliable light-emitting device sealed with the sealed structure can be manufactured. By applying the method of manufacturing a light-emitting device especially to an organic EL element, a highly reliable light-emitting device can be obtained.
摘要翻译：密封结构密封的密封结构的制造方法以及密封结构的发光装置的制造方法。在制造密封结构的方法和使用玻璃料层的发光装置中，形成用于防止在基板中产生的裂纹的缓冲层和通过激光照射的玻璃料层的第一步骤，第二步骤形成玻璃料层与衬底上的缓冲层重叠，并且进行通过用激光照射玻璃料层或缓冲层来焊接衬底的第三步骤，由此具有高密封性和可靠的光的密封结构可以制造用密封结构密封的装置。通过将发光元件的制造方法特别适用于有机EL元件，可以得到高可靠性的发光元件。

33. 发明申请

US20110115046A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体衬底的方法和半导体器件
公开(公告)号：US20110115046A1
公开(公告)日：2011-05-19
申请号：US13011179
申请日：2011-01-21
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Motoki NAKASHIMA
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Motoki NAKASHIMA
IPC分类号： H01L29/06
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.
摘要翻译：提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合，通过热处理将单晶半导体基板沿着脆化层分离，将单晶半导体层固定在基板上基质。接下来，在能量密度不同的条件下，用激光照射监视器基板的多个区域，并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布测光。激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层，由此制造半导体衬底。

34. 发明申请

US20110030901A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 审中-公开
标题翻译：制造半导体基板和半导体基板制造装置的方法
公开(公告)号：US20110030901A1
公开(公告)日：2011-02-10
申请号：US12903527
申请日：2010-10-13
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： B32B37/10
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的特定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

35. 发明申请

US20100330779A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE 有权
标题翻译：制造SOI衬底和SOI衬底的方法
公开(公告)号：US20100330779A1
公开(公告)日：2010-12-30
申请号：US12821545
申请日：2010-06-23
申请人： Naoki OKUNO , Akihisa SHIMOMURA , Hajime TOKUNAGA
发明人： Naoki OKUNO , Akihisa SHIMOMURA , Hajime TOKUNAGA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02686 , H01L21/84
摘要： A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate.
摘要翻译：用键合衬底照射加速离子以在接合衬底中形成脆化区域; 在接合基板或基底基板的表面上形成绝缘层; 接合衬底和基底基板彼此接合，绝缘层插入其间; 在接合基板和基底基板的一部分上形成接合基板和基板基板未被接合并被接合基板封闭的区域和基板; 通过热处理在脆化区域分离粘合基材; 并且在基底基板上形成半导体层。

36. 发明申请

US20100291754A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体基板及其制造方法以及制造半导体器件的方法
公开(公告)号：US20100291754A1
公开(公告)日：2010-11-18
申请号：US12844224
申请日：2010-07-27
申请人： Masaki KOYAMA , Fumito ISAKA , Akihisa SHIMOMURA , Junpei MOMO
发明人： Masaki KOYAMA , Fumito ISAKA , Akihisa SHIMOMURA , Junpei MOMO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

37. 发明申请

US20100275989A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100275989A1
公开(公告)日：2010-11-04
申请号：US12766389
申请日：2010-04-23
申请人： Teruyuki FUJII , Kohei OHSHIMA , Junya MARUYAMA , Akihisa SHIMOMURA
发明人： Teruyuki FUJII , Kohei OHSHIMA , Junya MARUYAMA , Akihisa SHIMOMURA
IPC分类号： H01L31/04 , H01L23/48 , H01L21/22 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/028 , H01L31/0296 , H01L31/068 , H01L31/075 , Y02E10/50
摘要： An object relates to an electrode of a semiconductor device or a method for manufacturing a semiconductor device, which includes a bonding step, and problems are: (1) high resistance of a semiconductor device due to the use of an Al electrode, (2) formation of an alloy by Al and Si, (3) high resistance of a film formed by a sputtering method, and (4) defective bonding in a bonding step which is caused if a bonding surface has a large unevenness. A semiconductor device includes a metal substrate or a substrate provided with a metal film, a copper (Cu) plating film over and bonded to the metal substrate or the metal film by employing a thermocompression bonding method, a barrier film over the Cu plating film, a single crystal silicon film over the barrier film, and an electrode layer over the single crystal silicon film.
摘要翻译：本发明涉及一种半导体器件的电极或半导体器件的制造方法，其包括接合工序，其问题是：（1）由于使用Al电极而导致的半导体器件的高电阻，（2）通过Al和Si形成合金，（3）通过溅射法形成的膜的高电阻，以及（4）如果接合表面具有大的不平坦度时引起的接合步骤中的不良接合。半导体装置包括金属基板或具有金属膜的金属基板，通过使用热压接法在金属基板或金属膜上结合的铜（Cu）电镀膜，在Cu镀膜上的阻挡膜，阻挡膜上的单晶硅膜，以及单晶硅膜上的电极层。

38. 发明申请

US20090170286A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20090170286A1
公开(公告)日：2009-07-02
申请号：US12333650
申请日：2008-12-12
申请人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
发明人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , B23K26/3576 , C30B33/04 , H01L21/02686 , H01L21/84 , H01L29/66772
摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.
摘要翻译：制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

39. 发明申请

US20080217563A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件和半导体制造设备的制造方法
公开(公告)号：US20080217563A1
公开(公告)日：2008-09-11
申请号：US12040934
申请日：2008-03-03
申请人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
发明人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
IPC分类号： H01L21/20 , H01L21/67
CPC分类号： H01L27/1266 , B23K26/0884 , B23K2101/006 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/67017 , H01L21/67225 , H01L27/1255 , H01L27/1285
摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.
摘要翻译：本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。在包括洗涤单元的半导体制造装置中，用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶通过激光结晶同时形成。

40. 发明申请

US20110318908A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件和半导体制造设备的制造方法
公开(公告)号：US20110318908A1
公开(公告)日：2011-12-29
申请号：US13227146
申请日：2011-09-07
申请人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
发明人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
IPC分类号： H01L21/268
CPC分类号： H01L27/1266 , B23K26/0884 , B23K2101/006 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/67017 , H01L21/67225 , H01L27/1255 , H01L27/1285
摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.
摘要翻译：本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。在包括洗涤单元的半导体制造装置中，用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶通过激光结晶同时形成。

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