专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090170286A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20090170286A1
公开(公告)日：2009-07-02
申请号：US12333650
申请日：2008-12-12
申请人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
发明人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , B23K26/3576 , C30B33/04 , H01L21/02686 , H01L21/84 , H01L29/66772
摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.
摘要翻译：制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

2. 发明申请

US20090179160A1 SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体基板制造设备
公开(公告)号：US20090179160A1
公开(公告)日：2009-07-16
申请号：US12344938
申请日：2008-12-29
申请人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
发明人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
IPC分类号： A61N5/00
CPC分类号： H01L21/76254 , H01L21/84 , H01L29/458 , H01L29/66772 , H01L29/78621
摘要： A semiconductor substrate is manufactured with use of a semiconductor substrate manufacturing apparatus including: a cleaning portion in which a bonding surface of a base substrate, and a bonding surface of a single crystal semiconductor substrate are cleaned, wherein the single crystal semiconductor substrate includes an embrittlement region provided in a region at a predetermined depth from its surface; an electromagnetic wave irradiation portion in which the base substrate and the single crystal semiconductor substrate are attached to each other, the single crystal semiconductor substrate is irradiated with an electromagnetic wave, and the single crystal semiconductor substrate is separated using the embrittlement region as a separation plane, so that a single crystal semiconductor layer separated from the single crystal semiconductor substrate is fixed to the base substrate; and a heat treatment portion in which the single crystal semiconductor layer fixed to the base substrate is subjected to heat treatment.
摘要翻译：使用半导体衬底制造设备制造半导体衬底，该半导体衬底制造设备包括：清洁基底衬底的接合表面和单晶半导体衬底的接合表面的清洁部分，其中单晶半导体衬底包括脆化层区域设置在距其表面预定深度的区域中; 基底基板和单晶半导体基板彼此连接的电磁波照射部，用电磁波照射单晶半导体基板，使用脆化区域作为分离面分离单晶半导体基板使得与单晶半导体衬底分离的单晶半导体层固定到基底衬底; 以及其中固定到基底基板的单晶半导体层进行热处理的热处理部分。

3. 发明申请

US20090233108A1 VACUUM FILM FORMATION METHOD FOR INORGANIC LAYER, BARRIER LAMINATE, DEVICE, AND OPTICAL COMPONENT 有权
标题翻译：无机层真空膜形成方法，障壁层压板，器件和光学元件
公开(公告)号：US20090233108A1
公开(公告)日：2009-09-17
申请号：US12404761
申请日：2009-03-16
申请人： Naoki TSUKAMOTO
发明人： Naoki TSUKAMOTO
IPC分类号： B32B9/00 , B05D3/00 , C23C16/22 , C23C14/34
CPC分类号： C23C14/566 , C23C14/0652 , C23C14/081 , H01L51/5237 , H01L51/5256 , Y10T428/31678
摘要： A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100 a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.
摘要翻译：一种用于在载体上形成至少一个无机层的真空成膜方法，其包括将其上形成有无机层的待涂覆表面的面积作为（单位：cm2）的载体输送到具有在大气压下至多100a（单位：cm3）的容量，将第一真空槽脱气成真空，将载体从第一真空槽输送到第二真空槽，同时保持真空状态，并形成在第二真空槽中的载体上的至少一个无机层。

4. 发明申请

US20090159429A1 REACTIVE SPUTTERING APPARATUS AND REACTIVE SPUTTERING METHOD 有权
标题翻译：反应溅射装置和反应溅射方法
公开(公告)号：US20090159429A1
公开(公告)日：2009-06-25
申请号：US12332808
申请日：2008-12-11
申请人： Naoki TSUKAMOTO
发明人： Naoki TSUKAMOTO
IPC分类号： C23C14/35
CPC分类号： C23C14/562 , C23C14/0036 , C23C14/044 , C23C14/081 , C23C14/345 , C23C14/351 , H01J37/3277 , H01J37/3405
摘要： Disclosed is a A reactive sputtering apparatus for a bias sputtering method of applying a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a reactive sputtering method; which comprises a supporting substrate conveyor unit and a cathode that includes a target provided to face the supporting substrate conveyor unit, and wherein a supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a metal compound on the supporting substrate, magnets are provided adjacent to the supporting substrate conveyor unit on the side thereof opposite to the supporting substrate in such that the magnetic field is closed and the continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon, on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the second magnetic pole surrounding the first magnetic pole and, in film formation on the supporting substrate, the supporting substrate is conveyed on the same plane as that of the tunnel part and in the direction nearly perpendicular to the tunnel part.
摘要翻译：公开了一种用于偏置溅射方法的反应溅射装置，其中，根据反应溅射法，在支撑基板上形成金属化合物膜时，向支撑基板施加偏置电压; 其包括支撑基板输送单元和阴极，所述阴极包括设置成面向所述支撑基板输送单元的目标，并且其中支撑基板在所述支撑基板输送单元和所述目标之间输送以在所述支撑基板上形成金属化合物，在支撑基板输送单元的与支撑基板相对的一侧设置磁体，使得磁场闭合，并且平行或几乎平行的拱形磁力线的连续通道部分形成椭圆形或多边形，所述磁体各自具有S极或N极的第一磁极和与所述第一磁极相对的第二磁极，所述第二磁极围绕所述第一磁极，并且在所述支撑基板上的膜形成中，支撑基板在与隧道部分的平面相同的平面上并且在几乎持续的方向上被传送密封到隧道部分。

5. 发明申请

US20090233101A1 BARRIER LAMINATE AND METHOD FOR PRODUCING SAME, DEVICE AND OPTICAL COMPONENT 审中-公开
标题翻译：阻挡层压板及其制造方法，装置和光学部件
公开(公告)号：US20090233101A1
公开(公告)日：2009-09-17
申请号：US12404694
申请日：2009-03-16
申请人： Naoki TSUKAMOTO
发明人： Naoki TSUKAMOTO
IPC分类号： B32B27/06 , B32B27/00 , C23C14/34
CPC分类号： C08J7/045 , H01L51/5256 , Y10T428/31533 , Y10T428/31855
摘要： In a method for producing a barrier laminate having an organic layer and an inorganic layer on a support, the organic layer is formed by sputtering. The barrier laminate produced by the method has an excellent barrier property.
摘要翻译：在支撑体上具有有机层和无机层的阻挡层叠体的制造方法中，通过溅射形成有机层。通过该方法制备的阻隔层压板具有优异的阻隔性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式