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31. 发明授权

US08039404B2 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08039404B2
公开(公告)日：2011-10-18
申请号：US12788697
申请日：2010-05-27
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/469
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
摘要翻译：一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的施加指定次数，直到在基板表面上形成所需厚度的膜。

32. 发明申请

US20100087069A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20100087069A1
公开(公告)日：2010-04-08
申请号：US12571688
申请日：2009-10-01
申请人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
发明人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
IPC分类号： H01L21/316 , C23C16/46 , C23C16/513
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.
摘要翻译：可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。提供了制造半导体器件的方法。该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

33. 发明申请

US20100015811A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR FORMING FILM 有权
标题翻译：基板处理装置和半导体器件制造薄膜形成方法
公开(公告)号：US20100015811A1
公开(公告)日：2010-01-21
申请号：US12502387
申请日：2009-07-14
申请人： Taketoshi Sato , Kazuyuki Toyoda
发明人： Taketoshi Sato , Kazuyuki Toyoda
IPC分类号： H01L21/30 , B05C11/00
CPC分类号： H01L21/3185 , H01J37/32082 , H01J37/32449 , H01J37/32935 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/3141
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber, a gas supply system, a gas discharge system, an RF (radio frequency) unit, an electrode, and a control device. The control device controls the gas supply system, the gas discharge system, and the RF unit. While the control device controls the RF unit to apply predetermined RF power to the electrode for generating plasma, the control device controls the gas supply system to supply a process gas to the process chamber alternately at a first flowrate and at a second flowrate greater than the first flowrate.
摘要翻译：提供了一种基板处理装置。基板处理装置包括处理室，气体供给系统，气体放电系统，RF（射频）单元，电极和控制装置。控制装置控制供气系统，气体放电系统和RF单元。当控制装置控制RF单元以将预定的RF功率施加到用于产生等离子体的电极时，控制装置控制气体供应系统以交替地以第一流量和大于第二流量的第二流量向处理室提供处理气体第一流量。

34. 发明申请

US20080124945A1 Production Method for Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：半导体器件和衬底处理设备的生产方法
公开(公告)号：US20080124945A1
公开(公告)日：2008-05-29
申请号：US11666360
申请日：2006-02-15
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/469 , C23C16/52
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

35. 发明申请

US20060090849A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20060090849A1
公开(公告)日：2006-05-04
申请号：US11293257
申请日：2005-12-05
申请人： Kazuyuki Toyoda , Atsuhiko Suda , Issei Makiguchi , Tsutomu Tanaka , Sadayuki Suzuki , Shinichi Nomura , Mitsunori Takeshita
发明人： Kazuyuki Toyoda , Atsuhiko Suda , Issei Makiguchi , Tsutomu Tanaka , Sadayuki Suzuki , Shinichi Nomura , Mitsunori Takeshita
IPC分类号： C23F1/00
CPC分类号： H01L21/67178 , C23C16/54 , H01L21/67766 , H01L21/67781
摘要： A substrate processing apparatus comprises a substrate transfer section, a plurality of modules and a first substrate transfer robot provided in the substrate transfer section and capable of transferring substrates to the plurality of modules. The plurality of modules are piled up, separately from one another, in a vertical direction. Each of the plurality of modules are detachably mounted to the substrate transfer section and includes a substrate processing chamber, an intermediate chamber, a first gate valve disposed between the substrate processing chamber and the intermediate chamber, a second gate valve disposed between the intermediate chamber and the substrate transfer section, and a second substrate transfer robot disposed in the intermediate chamber. Preferably, the substrate processing chamber further comprises a second intermediate chamber having a substrate holder therein and disposed between the intermediate chamber and the substrate transfer section, and a third gate valve disposed between the second intermediate chamber and the substrate transfer section.
摘要翻译：基板处理装置包括基板转印部，多个模块和设置在基板转印部中并能够将基板传送到多个模块的第一基板传送机械手。多个模块在垂直方向彼此分开堆叠。多个模块中的每一个可拆卸地安装到基板传送部分，并且包括基板处理室，中间室，设置在基板处理室和中间室之间的第一闸阀，设置在中间室和第二闸阀之间的第二闸阀基板传送部分和设置在中间室中的第二基板传送机器人。优选地，衬底处理室还包括第二中间室，其中具有衬底保持器，并设置在中间室和衬底转移部之间，以及设置在第二中间室和衬底转移部之间的第三闸阀。

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