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31. 发明申请

US20130029490A1 HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING 失效
公开(公告)号：US20130029490A1
公开(公告)日：2013-01-31
申请号：US13190378
申请日：2011-07-25
申请人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/312
CPC分类号： H01L21/02 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

32. 发明授权

US07202011B2 Photosensitive polymer including fluorine and resist composition containing the same 有权
标题翻译：包含氟的光敏聚合物和含有它的抗蚀剂组合物
公开(公告)号：US07202011B2
公开(公告)日：2007-04-10
申请号：US10423945
申请日：2003-04-28
申请人： Kwang-Sub Yoon , Sang-Gyun Woo , Ki-Yong Song , Sang-jun Choi
发明人： Kwang-Sub Yoon , Sang-Gyun Woo , Ki-Yong Song , Sang-jun Choi
IPC分类号： G03C1/73 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30 , C08F16/24
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/108 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C3–C20 alkyl carbonyl, a fluorine-substituted or unsubstituted C3–C20 cycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.
摘要翻译：公开了一种光敏聚合物，其包含具有下式的五氟甲基乙烯基醚衍生物单体：

33. 发明授权

US07172974B2 Methods for forming fine pattern of semiconductor device 有权
标题翻译：用于形成半导体器件精细图案的方法
公开(公告)号：US07172974B2
公开(公告)日：2007-02-06
申请号：US10462448
申请日：2003-06-16
申请人： Sang-jun Choi , Young-mi Lee , Woo-sung Han
发明人： Sang-jun Choi , Young-mi Lee , Woo-sung Han
IPC分类号： H01L21/302
CPC分类号： G03F7/40 , H01L21/0275 , H01L21/0276
摘要： Provided is a method for forming a fine pattern of a semiconductor device by controlling the amount of flow of a resist pattern, including forming a resist pattern having a predetermined pattern distance on a material layer to be etched, forming a flow control barrier layer on the resist pattern to control the amount of flow during a subsequent resist flow process and to make the profile of the flowed pattern be vertical, optionally forming the flow control barrier layer by coating a material including a water-soluble high-molecular material and a crosslinking agent on the resist pattern, mixing and baking the coated material layer, and processing the resultant structure using deionized water, carrying out the flow resist process to form a hyperfine pattern and etching the lower material layer, and thereby forming fine patterns having the shape of contact holes or lines and spaces to have a critical dimension of about 100 nm or less, even with use of a KrF resist.
摘要翻译：提供了一种通过控制抗蚀剂图案的流动量来形成半导体器件的精细图案的方法，包括在待蚀刻的材料层上形成具有预定图案距离的抗蚀剂图案，在其上形成流动控制阻挡层抗蚀剂图案以控制随后的抗蚀剂流动过程期间的流量并使流动图案的轮廓垂直，任选地通过涂覆包括水溶性高分子材料和交联剂的材料形成流动控制阻挡层在抗蚀剂图案上，混合和烘烤涂覆材料层，并使用去离子水处理所得到的结构，进行流动阻挡工艺以形成超精细图案并蚀刻下部材料层，从而形成具有接触形状的精细图案空穴或线和空间具有约100nm或更小的临界尺寸，即使使用KrF抗蚀剂。

34. 发明申请

US20060246666A1 Method of fabricating flash memory with u-shape floating gate 审中-公开
标题翻译：用u形浮栅制造闪速存储器的方法
公开(公告)号：US20060246666A1
公开(公告)日：2006-11-02
申请号：US11410837
申请日：2006-04-26
申请人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
发明人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要翻译：提供一种制造具有U形浮动栅极的闪速存储器的方法。该方法包括形成由间隙隔开并在间隙中形成隧道氧化物层的相邻隔离层。在隧道氧化物层上形成导电层至不填充间隙的厚度之后，在导电层上形成抛光牺牲层。除去隔离层上的牺牲层和导电层，从而在间隙中形成自对准的U形浮动栅极，同时在浮栅的内部部分内形成牺牲层图案。然后将选定的隔离层凹入以露出浮动栅极的侧壁。然后从浮动栅极去除牺牲层图案以暴露浮动栅极的上表面。

35. 发明授权

US06966952B2 Apparatus of depositing thin film with high uniformity 失效
公开(公告)号：US06966952B2
公开(公告)日：2005-11-22
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

36. 发明授权

US06893793B2 Photosensitive polymer and chemically amplified photoresist composition containing the same 失效
标题翻译：光敏聚合物和含有其的化学放大光致抗蚀剂组合物
公开(公告)号：US06893793B2
公开(公告)日：2005-05-17
申请号：US10383770
申请日：2003-03-10
申请人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
发明人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
IPC分类号： C08F220/18 , C08F222/06 , C08F232/04 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/115 , Y10S430/122
摘要： The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.
摘要翻译：感光性高分子包含作为取代基具有C 1〜C 12脂肪族醇的降冰片烯的第一单体和作为马来酸酐的第二单体。含有光敏聚合物的化学放大光致抗蚀剂组合物具有改进的抗蚀刻性和对下层材料的粘附性，并且显示出对显影液的润湿性。

37. 发明授权

US06596459B1 Photosensitive polymer and resist composition containing the same 失效
标题翻译：含有它们的光敏聚合物和抗蚀剂组合物
公开(公告)号：US06596459B1
公开(公告)日：2003-07-22
申请号：US09716269
申请日：2000-11-21
申请人： Hyun-woo Kim , Ki-young Kwon , Si-hyeung Lee , Dong-won Jung , Sook Lee , Kwang-sub Yoon , Sang-jun Choi , Sang-gyun Woo
发明人： Hyun-woo Kim , Ki-young Kwon , Si-hyeung Lee , Dong-won Jung , Sook Lee , Kwang-sub Yoon , Sang-jun Choi , Sang-gyun Woo
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0397
摘要： There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.
摘要翻译：提供光敏聚合物和含有它的光致抗蚀剂复合物。光敏聚合物由下式表示：其中R1是酸不稳定的叔烷基酯基，R2是氢原子，甲基，乙基，羧基，γ-丁内酯-2-基酯，γ-丁内酯-3-基酯，泛酸内酯-2-基酯，甲羟戊酸内酯，3-四氢呋喃基酯，2,3-亚丙基碳酸酯-1-基酯，3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃，a /（ a + b + c）为0.1〜0.7，b /（a + b + c）为0.1〜0.8，c /（a + b + c）为0.0〜0.8，n为0〜 2。

38. 发明授权

US06593441B2 Photosensitive polymer and chemically amplified photoresist composition containing the same 失效
公开(公告)号：US06593441B2
公开(公告)日：2003-07-15
申请号：US10218637
申请日：2002-08-15
申请人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
发明人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
IPC分类号： C08F3600
CPC分类号： G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/115 , Y10S430/122
摘要： The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.

39. 发明授权

US06416927B1 Chemically amplified resist compositions 有权
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06416927B1
公开(公告)日：2002-07-09
申请号：US09675500
申请日：2000-09-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

40. 发明授权

US06284438B1 Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same 失效
标题翻译：用于制造限定小开口的光致抗蚀剂图案的方法和使用其制造半导体器件的方法
公开(公告)号：US06284438B1
公开(公告)日：2001-09-04
申请号：US09420555
申请日：1999-10-19
申请人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
发明人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
IPC分类号： G03F726
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/039
摘要： A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.
摘要翻译：提供了限定具有小尺寸的开口的光致抗蚀剂图案的制造方法以及使用其的半导体装置的制造方法。可以使用光致抗蚀剂组合物形成限定开口的光致抗蚀剂图案，该光致抗蚀剂组合物包括含有聚合物A的聚合物混合物I，其中酸不稳定的二烷基丙二酸酯基团悬挂于聚合物主链，聚合物B，在低于聚合物B本身的玻璃化转变温度的温度下热分解为聚合物主链，或含有聚合物B的聚合物混合物II和包含（甲基）丙烯酸酯作为单体的聚合物C作为主要成分。然后可以通过光致抗蚀剂图案的热流动来减小开口的尺寸。可以形成限定具有小尺寸的开口的光致抗蚀剂图案，因为光致抗蚀剂组合物包含聚合物混合物，其具有诸如高对比度的有利特征，并且其中组合物在热流动时的流速可以容易地被控制。

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