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31. 发明申请

US20150028416A1 SEMICONDUCTOR COMPONENT WITH DYNAMIC BEHAVIOR 有权
公开(公告)号：US20150028416A1
公开(公告)日：2015-01-29
申请号：US14514491
申请日：2014-10-15
申请人： Infineon Technologies AG
发明人： Markus Zundel , Franz Hirler
IPC分类号： H01L29/40 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1045 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66734 , H01L29/7397 , H01L29/7809 , H01L29/7813 , H01L29/7827 , H01L29/861
摘要： One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.

32. 发明授权

US08901647B2 Semiconductor device including first and second semiconductor elements 有权
标题翻译：包括第一和第二半导体元件的半导体器件
公开(公告)号：US08901647B2
公开(公告)日：2014-12-02
申请号：US13673389
申请日：2012-11-09
申请人： Infineon Technologies AG
发明人： Franz Hirler , Ulrich Glaser , Christian Lenzhofer
IPC分类号： H01L29/66 , H01L27/02
CPC分类号： H01L27/0248 , H01L27/0255
摘要： A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient α1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient α2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×α1
摘要翻译：半导体器件包括在第一端子和第二端子之间包括第一pn结的第一半导体元件。半导体器件还包括在第三端子和第四端子之间包括第二pn结的半导体元件。半导体元件还包括半导体本体，其包括第一半导体元件和第一半导体元件，该第一半导体元件被整体地集成。第一和第三端子电耦合到第一器件端子。第二和第四端子电耦合到第二器件端子。第一pn结的击穿电压Vbr1的温度系数α1和第二pn结的击穿电压Vbr2的温度系数α2具有相同的代数，并且在T = 300K时满足0.6×α1<α2<1.1×α1 ，其中Vbr2

33. 发明申请

US20140332885A1 Trench Transistor Having a Doped Semiconductor Region 有权
标题翻译：具有掺杂半导体区域的沟槽晶体管
公开(公告)号：US20140332885A1
公开(公告)日：2014-11-13
申请号：US14446741
申请日：2014-07-30
申请人： Infineon Technologies AG
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaeffer
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
摘要翻译：横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

34. 发明申请

US20190334000A1 Transistor Component 审中-公开
公开(公告)号：US20190334000A1
公开(公告)日：2019-10-31
申请号：US16393051
申请日：2019-04-24
申请人： Infineon Technologies AG
发明人： Markus Zundel , Karl-Heinz Bach , Peter Brandl , Franz Hirler , Andrew Christopher Graeme Wood
IPC分类号： H01L29/40 , H01L29/06 , H01L29/10 , H01L29/08 , H01L29/423 , H01L29/36 , H01L29/78
摘要： A transistor component includes at least one transistor cell having: a drift region, a source region, a body region and a drain region in a semiconductor body, the body region being arranged between the source and drift regions, and the drift region being arranged between the body and drain regions; a gate electrode arranged adjacent to the body region and dielectrically isolated from the body region by a gate dielectric; and a field electrode arranged adjacent to the drift region and dielectrically isolated from the drift region by a field electrode dielectric. The field electrode dielectric has a thickness that increases in a direction toward the drain region. The drift region has, in a mesa region adjacent to the field electrode, a doping concentration that increases in the direction toward the drain region.

35. 发明授权

US10325996B2 Method for producing a doped semiconductor layer 有权
公开(公告)号：US10325996B2
公开(公告)日：2019-06-18
申请号：US15724604
申请日：2017-10-04
申请人： Infineon Technologies AG
发明人： Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
IPC分类号： H01L21/22 , H01L29/66 , H01L29/36 , H01L29/739 , H01L29/74 , H01L21/265 , H01L29/78 , H01L29/861 , H01L29/872 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/40 , H01L29/06 , H01L29/165
摘要： A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.

36. 发明申请

US20170358650A1 Semiconductor Device Comprising a Transistor Including a First Field Plate and a Second Field Plate 审中-公开
公开(公告)号：US20170358650A1
公开(公告)日：2017-12-14
申请号：US15614651
申请日：2017-06-06
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Franz Hirler , Till Schloesser
IPC分类号： H01L29/40 , H01L29/10 , H01L29/739 , H01L29/78
CPC分类号： H01L29/404 , H01L29/0696 , H01L29/0878 , H01L29/10 , H01L29/1083 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66696 , H01L29/66704 , H01L29/7393 , H01L29/7816 , H01L29/7825
摘要： A semiconductor device includes a transistor in a semiconductor substrate. The transistor includes a drift zone of a first conductivity type adjacent to a drain region, and a first field plate and a second field plate adjacent to the drift zone. The second field plate is arranged between the first field plate and the drain region. The second field plate is electrically connected to a contact portion arranged in the drift zone. The transistor further includes an intermediate portion of the first conductivity type at a lower doping concentration than the drift zone. A distance between the intermediate portion and the drain region is smaller than the distance between the contact portion and the drain region.

37. 发明授权

US09812563B2 Transistor with field electrodes and improved avalanche breakdown behavior 有权
公开(公告)号：US09812563B2
公开(公告)日：2017-11-07
申请号：US15182244
申请日：2016-06-14
申请人： Infineon Technologies AG
发明人： Ralf Siemieniec , Markus Zundel , Karl-Heinz Bach , Franz Hirler , Christian Kampen , Werner Schustereder
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/66 , H01L29/10 , H01L21/265 , H01L21/324
CPC分类号： H01L29/7813 , H01L21/265 , H01L21/2652 , H01L21/324 , H01L29/063 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/408 , H01L29/66734
摘要： A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.

38. 发明授权

US09711621B2 Trench transistor having a doped semiconductor region 有权
公开(公告)号：US09711621B2
公开(公告)日：2017-07-18
申请号：US14446741
申请日：2014-07-30
申请人： Infineon Technologies AG
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaeffer
IPC分类号： H01L29/10 , H01L29/66 , H01L29/423 , H01L29/78 , H01L21/265 , H01L29/06 , H01L29/417
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.

39. 发明授权

US09620637B2 Semiconductor device comprising a gate electrode connected to a source terminal 有权
公开(公告)号：US09620637B2
公开(公告)日：2017-04-11
申请号：US13902151
申请日：2013-05-24
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Till Schloesser , Franz Hirler
IPC分类号： H01L29/76 , H01L29/78 , H01L29/94 , H01L31/113 , H01L27/115 , H01L21/28 , H01L23/48 , H01L29/88 , H01L29/66 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/66204 , H01L29/66734 , H01L29/7391
摘要： A semiconductor device formed in a semiconductor substrate includes a source region, a drain region, a gate electrode, and a body region disposed between the source region and the drain region. The gate electrode is disposed adjacent at least two sides of the body region, and the source region and the gate electrode are coupled to a source terminal. A width of the body region between the two sides of the body region is selected so that the body region is configured to be fully depleted.

40. 发明授权

US09583578B2 Semiconductor device including an edge area and method of manufacturing a semiconductor device 有权
标题翻译：包括边缘区域的半导体器件和制造半导体器件的方法
公开(公告)号：US09583578B2
公开(公告)日：2017-02-28
申请号：US13754957
申请日：2013-01-31
申请人： Infineon Technologies AG
发明人： Hans-Joachim Schulze , Anton Mauder , Franz Hirler
IPC分类号： H01L21/12 , H01L29/66 , H01L29/36 , H01L21/04 , H01L29/739 , H01L29/861 , H01L29/08 , H01L29/78 , H01L29/40 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/10
CPC分类号： H01L29/36 , H01L21/04 , H01L29/0615 , H01L29/0623 , H01L29/0634 , H01L29/0834 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66128 , H01L29/66136 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/8611
摘要： A semiconductor portion of a semiconductor device includes a semiconductor layer with a drift zone of a first conductivity type and at least one impurity zone of a second, opposite conductivity type. The impurity zone adjoins a first surface of the semiconductor portion in an element area. A connection layer directly adjoins the semiconductor layer opposite to the first surface. At a distance to the first surface an overcompensation zone is formed in an edge area that surrounds the element area. The overcompensation zone and the connection layer have opposite conductivity types. In a direction vertical to the first surface, a portion of the drift zone is arranged between the first surface and the overcompensation zone. In case of locally high current densities, the overcompensation zone injects charge carriers into the semiconductor layer that locally counter a further increase of electric field strength and reduce the risk of avalanche breakdown.
摘要翻译：半导体器件的半导体部分包括具有第一导电类型的漂移区和具有第二相反导电类型的至少一个杂质区的半导体层。杂质区在元件区域中邻接半导体部分的第一表面。连接层直接邻接与第一表面相对的半导体层。在距离第一表面的距离处，在围绕元件区域的边缘区域中形成过度补偿区域。过补偿区和连接层具有相反的导电类型。在垂直于第一表面的方向上，漂移区的一部分布置在第一表面和过补偿区之间。在局部高电流密度的情况下，过补偿区将电荷载流子注入到半导体层中，其局部地抵消电场强度的进一步增加并降低雪崩击穿的风险。

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