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31. 发明授权

US07183614B2 Semiconductor device and method of manufacture thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07183614B2
公开(公告)日：2007-02-27
申请号：US11137513
申请日：2005-05-26
申请人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
发明人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.
摘要翻译：提供了一种方法，通过该方法可以容易地形成轻掺杂漏极（LDD）区域，并且在具有覆盖有氧化物覆盖层的栅电极的薄膜晶体管中的源/漏区域中以良好的产率形成。通过以栅极电极作为掩模，以自对准的方式将杂质引入岛状硅膜中形成轻掺杂漏极（LDD）区域。首先，通过使用旋转 - 倾斜离子注入在岛状硅膜中形成低浓度杂质区，以相对于衬底从倾斜方向进行离子掺杂。此时也在栅电极下方形成低浓度杂质区。之后，将高浓度的杂质通常引入衬底，从而形成高浓度杂质区域。在上述过程中，低浓度杂质区域保留在栅电极下方并构成轻掺杂漏区。

32. 发明申请

US20070037069A1 EXPOSURE MASK 有权
标题翻译：曝光面膜
公开(公告)号：US20070037069A1
公开(公告)日：2007-02-15
申请号：US11462824
申请日：2006-08-07
申请人： Hideto Ohnuma
发明人： Hideto Ohnuma
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： H01L27/1288 , G03F1/28 , G03F1/32 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78621 , H01L29/78624 , Y10T428/24802
摘要： An exposure mask provided with a semi-transparent film, capable of forming a resist in which a convex portion is not formed in an end portion and the end portion has gentle shape. In an exposure mask having a first region and a second region having different phase and transmittance with respect to exposure light, the phase difference Δθ with respect to exposure light which transmits though the first region and the second region and the transmittance n of the second region with respect to exposure light are defined so as to satisfy following formula 1. Δθ≦arccos (−√n/2) [Formula 1]Accordingly, a resist having regions with different thicknesses and having gentle shape in an edge can be formed. By performing a process such as etching with this resist, regions having different thicknesses can be formed in a self-aligned manner.
摘要翻译：一种具有半透明膜的曝光掩模，能够形成在端部不形成凸部并且端部具有平缓形状的抗蚀剂。在具有相对于曝光光具有不同相位和透射率的第一区域和第二区域的曝光掩模中，相对于通过第一区域和第二区域透射的曝光光的相位差Deltatheta和第二区域的透射率n 定义为曝光光以满足下面的公式1. <？in-line-formula description =“In-line Formulas”end =“lead”？> Deltatheta <= arccos（-√n/ 2）[式 1] <？in-line-formula description =“In-line Formulas”end =“tail”？>因此，可以形成具有不同厚度且具有边缘温和形状的区域的抗蚀剂。通过利用该抗蚀剂进行蚀刻等处理，能够以自对准的方式形成具有不同厚度的区域。

33. 发明申请

US20070032049A1 Process for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070032049A1
公开(公告)日：2007-02-08
申请号：US11580938
申请日：2006-10-16
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
IPC分类号： H01L21/20
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678
摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.
摘要翻译：在绝缘表面上形成第一非晶半导体膜。加入促进结晶的催化剂元素。此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。在第一结晶半导体膜上形成阻挡层和第二半导体层。第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20，浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

34. 发明申请

US20060275710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060275710A1
公开(公告)日：2006-12-07
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： G03F7/26
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

35. 发明授权

US07115453B2 Semiconductor device and manufacturing method of the same 有权
公开(公告)号：US07115453B2
公开(公告)日：2006-10-03
申请号：US10056055
申请日：2002-01-28
申请人： Osamu Nakamura , Masayuki Kajiwara , Shunpei Yamazaki , Hideto Ohnuma
发明人： Osamu Nakamura , Masayuki Kajiwara , Shunpei Yamazaki , Hideto Ohnuma
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/78675 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/32 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78663
摘要： Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a semiconductor film having an amorphous structure, gettering is completed by forming a region or a semiconductor film, to which a rare gas element is added, and by having the catalytic element move to the formed region or semiconductor film.

36. 发明授权

US07098084B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US07098084B2
公开(公告)日：2006-08-29
申请号：US09800627
申请日：2001-03-07
申请人： Koichiro Tanaka , Hideto Ohnuma , Chiho Kokubo
发明人： Koichiro Tanaka , Hideto Ohnuma , Chiho Kokubo
IPC分类号： H01L21/84
CPC分类号： H01L21/02422 , G02F1/13454 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78645 , Y10S438/907
摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

37. 发明授权

US07091110B2 Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer 失效
标题翻译：使用防扩散层进行吸气制造半导体器件的方法
公开(公告)号：US07091110B2
公开(公告)日：2006-08-15
申请号：US10458622
申请日：2003-06-11
申请人： Hideto Ohnuma
发明人： Hideto Ohnuma
IPC分类号： H01L21/322
CPC分类号： H01L29/4908 , H01L21/3226 , H01L27/12 , H01L27/1277 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A technique, where a semiconductor film having a crystal structure is obtained using a metal element that helps crystallization of the semiconductor film, then that metal element remained in the film is effectively removed, as a result variation among elements is reduced, is provided. In a process for forming a gettering site, a semiconductor film containing a rare-gas element is formed, then an anti-diffusion film for preventing diffusion of the rare-gas element is formed, thereby the metal element in another semiconductor film is effectively removed, particularly in a gettering that is a heating treatment at a high temperature of 600° C. or more.
摘要翻译：使用有助于半导体膜结晶的金属元素获得具有晶体结构的半导体膜的技术，因此有效地去除了残留在膜中的金属元素，结果，元件之间的变化被降低。在形成吸气部位的方法中，形成含有稀有气体元素的半导体膜，形成防止稀土元素扩散的防扩散膜，有效地除去另一半导体膜中的金属元素特别是在600℃以上的高温下的加热处理的吸气。

38. 发明授权

US07056775B2 Semiconductor device and process for fabricating the same 失效
公开(公告)号：US07056775B2
公开(公告)日：2006-06-06
申请号：US11172908
申请日：2005-07-05
申请人： Hongyong Zhang , Hideto Ohnuma , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideto Ohnuma , Yasuhiko Takemura
IPC分类号： H01L21/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/3221 , H01L27/1277 , H01L29/66757 , Y10S148/004 , Y10S148/016 , Y10S148/06
摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

39. 发明申请

US20060014335A1 Method of manufacturing a semiconductor device 有权
公开(公告)号：US20060014335A1
公开(公告)日：2006-01-19
申请号：US11224047
申请日：2005-09-13
申请人： Hideto Ohnuma , Ichiro Uehara
发明人： Hideto Ohnuma , Ichiro Uehara
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L21/28114 , H01L21/32136 , H01L21/32139 , H01L27/1214 , H01L29/42384 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L2029/7863 , Y10S438/949
摘要： Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

40. 发明申请

US20050245053A1 Semiconductor device and process for fabricating the same 失效
公开(公告)号：US20050245053A1
公开(公告)日：2005-11-03
申请号：US11172908
申请日：2005-07-05
申请人： Hongyong Zhang , Hideto Ohnuma , Yasuhico Takemura
发明人： Hongyong Zhang , Hideto Ohnuma , Yasuhico Takemura
IPC分类号： H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/3221 , H01L27/1277 , H01L29/66757 , Y10S148/004 , Y10S148/016 , Y10S148/06
摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed. After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

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