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31. 发明申请

US20070105523A1 Low noise amplifier 审中-公开
标题翻译：低噪声放大器
公开(公告)号：US20070105523A1
公开(公告)日：2007-05-10
申请号：US10560703
申请日：2004-06-11
申请人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
发明人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
IPC分类号： H04B1/10 , H04B1/28 , H04B1/16
CPC分类号： H01L21/82385 , H01L21/823807 , H01L27/092 , H01L29/785 , H03F1/26 , H03F2200/372 , H03G1/0029 , H03G1/007
摘要： A low noise amplifier is assumed to comprise an MIS transistor and to amplify an input signal keeping noise at a low level, and the MIS transistor comprises a semiconductor substrate for comprising a first crystal plane as a principal plane, a semiconductor structure, formed as a part of the semiconductor substrate, for comprising a pair of sidewall planes defined by the second crystal plane different from the first crystal plane and a top plane defined by the third crystal plane different from the second crystal plane, a gate insulator of uniform thickness covering the principal plane, the sidewall planes and the top plane, a gate electrode for continuously covering the principal plane, the sidewall planes and the top plane on top of the gate insulator, and a single conductivity type diffusion area formed in the region to either side of the gate electrode in the semiconductor substrate and the semiconductor structure and continuously extending along the principal plane, the sidewall planes and the top plane. Such a configuration allows significant reduction of the 1/f noise and the signal distortion applied to an output signal by the low noise amplifier and therefore a circuit for compensating for the reduction of the amplitude is no longer of necessity, allowing reduction in size.
摘要翻译：假设低噪声放大器包括MIS晶体管并且将保持噪声保持在低电平的输入信号放大，并且MIS晶体管包括用于包括第一晶面作为主平面的半导体衬底，形成为所述半导体衬底的一部分包括由不同于所述第一晶体面的所述第二晶体面限定的一对侧壁平面和由与所述第二晶体面不同的所述第三晶体面限定的顶面，覆盖所述半导体衬底的均匀厚度的栅极绝缘体主平面，侧壁平面和顶面，用于连续覆盖主平面，侧壁平面和栅极绝缘体顶部的顶面的栅极，以及在该区域中形成的单一导电型扩散区域半导体衬底中的栅电极和半导体结构，并且沿着主平面连续延伸，侧壁p 车道和顶层飞机。这样的配置允许显着降低由低噪声放大器施加到输出信号的1 / f噪声和信号失真，因此不再需要用于补偿幅度减小的电路，从而允许尺寸减小。

32. 发明申请

US20060180840A1 Switched capacitor circuit and semiconductor integrated circuit thereof 审中-公开
标题翻译：开关电容电路及其半导体集成电路
公开(公告)号：US20060180840A1
公开(公告)日：2006-08-17
申请号：US10560397
申请日：2004-06-11
申请人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
发明人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L29/66787 , H01L21/823807 , H01L21/82385 , H01L27/092
摘要： A rectangular parallelepiped projecting portion (21) having a height of HB and a width of WB is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion (21), thereby generating a MOS transistor. By connecting in parallel a p-channel MOS transistor and an n-channel MOS transistor produced as described above, a switch of a switched capacitor circuit is configured, thereby reducing a leak current and a DC offset of the switched capacitor circuit.
摘要翻译：在硅衬底上形成具有H B高度和W B B的宽度的长方体的突出部分（21），并且栅极氧化膜形成在突出部分（21）的顶表面和侧表面的一部分，从而产生MOS晶体管。通过并联连接如上所述制造的p沟道MOS晶体管和n沟道MOS晶体管，构造开关电容器电路的开关，从而减小开关电容器电路的漏电流和DC偏移。

33. 发明授权

US07012311B2 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 失效
标题翻译：在Si晶体的（111）表面上形成的半导体器件及其制造方法
公开(公告)号：US07012311B2
公开(公告)日：2006-03-14
申请号：US09866576
申请日：2001-05-29
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
摘要翻译：半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜含Ar或Kr的薄膜。

34. 发明授权

US06831685B1 Solid-state image pickup element 失效
标题翻译：固态摄像元件
公开(公告)号：US06831685B1
公开(公告)日：2004-12-14
申请号：US09316947
申请日：1999-05-24
申请人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N964
CPC分类号： H04N5/3698 , H04N5/3595 , H04N5/376 , H04N5/378
摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.
摘要翻译：本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。

35. 发明授权

US06669825B2 Method of forming a dielectric film 失效
公开(公告)号：US06669825B2
公开(公告)日：2003-12-30
申请号：US09867767
申请日：2001-05-31
申请人： Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： C23C1434
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

36. 发明授权

US06633334B1 Solid-state image pickup device with optimum layout of building components around a photoelectric conversion portion 失效
标题翻译：具有在光电转换部分周围的建筑部件的最佳布局的固态图像拾取装置
公开(公告)号：US06633334B1
公开(公告)日：2003-10-14
申请号：US09215195
申请日：1998-12-18
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Isami Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Isami Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
IPC分类号： H04N5335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： To optimize the layout of a pixel portion, there is provided a solid-state image pickup device including a photoelectric conversion portion, a charge transfer portion for transferring signal charges generated in the photoelectric conversion portion, and an amplifier portion for amplifying a signal corresponding to the signal charges transferred from the charge transfer portion and outputting the signal, wherein a plurality of photoelectric conversion portions, a plurality of charge transfer portions, and a plurality of amplifier portions are arranged in the row or/and column directions, and the charge transfer portion and the amplifier portion which are closest to each other are connected.
摘要翻译：为了优化像素部分的布局，提供了一种固态图像拾取装置，包括光电转换部分，用于传送在光电转换部分中产生的信号电荷的电荷转移部分，以及用于放大对应于从电荷转移部分传送的信号电荷并输出信号，其中多个光电转换部分，多个电荷转移部分和多个放大器部分被排列在行或/和列方向上，并且电荷转移部分和最靠近彼此的放大器部分相连。

37. 发明授权

US06605850B1 Solid-state image pickup device using layers having different refractive indices 有权
$Solid-state image pickup device using layers having different refractive indices$
标题翻译：使用具有不同折射率的层的固态图像拾取装置
公开(公告)号：US06605850B1
公开(公告)日：2003-08-12
申请号：US09706860
申请日：2000-11-07
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L2714
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14643 , H01L27/14692 , H01L27/14698
摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要翻译：为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率光电转换元件与第二层间层不同。

38. 发明授权

US06587603B1 Sensor unit capable of outputting image signals by blocks and processing circuit which processes image signals by blocks 有权
标题翻译：能够通过块输出图像信号的传感器单元和通过块处理图像信号的处理电路
公开(公告)号：US06587603B1
公开(公告)日：2003-07-01
申请号：US09347262
申请日：1999-07-06
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： G06K700
CPC分类号： G06T1/0007
摘要： Control to read signals from a sensor unit having a plurality of pixels by pixel blocks of a predetermined size, and the read signals are applied an operation to acquire distinctive information by pixel blocks of the predetermined size. The calculated distinctive information is applied to signal processes, such as signal compression, performed by a block.
摘要翻译：控制从具有预定尺寸的多个像素块的传感器单元读取信号，并且读取信号被施加以通过预定尺寸的像素块获取不同信息的操作。计算的特征信息被应用于由块执行的信号处理，例如信号压缩。

39. 发明授权

US06551948B2 Flash memory device and a fabrication process thereof, method of forming a dielectric film 有权
公开(公告)号：US06551948B2
公开(公告)日：2003-04-22
申请号：US09867699
申请日：2001-05-31
申请人： Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： H01L2131
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

40. 发明授权

US06188094B1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US06188094B1
公开(公告)日：2001-02-13
申请号：US09270008
申请日：1999-03-16
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27148
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14643 , H01L27/14692 , H01L27/14698
摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要翻译：为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率光电转换元件与第二层间层不同。

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