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31. 发明申请

US20050130435A1 Method of preventing damage to porous low-k materials during resist stripping 有权
标题翻译：防止剥离过程中破坏多孔低k材料的方法
公开(公告)号：US20050130435A1
公开(公告)日：2005-06-16
申请号：US10738280
申请日：2003-12-16
申请人： Rao Annapragada , Kenji Takeshita
发明人： Rao Annapragada , Kenji Takeshita
IPC分类号： H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.
摘要翻译：提供了在多孔低K电介质层中形成特征的方法。将多孔低K电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在多孔低K电介质层上。将特征蚀刻到多孔低K电介质层中。在蚀刻特征之后，在特征上沉积保护层。剥去图案化的光致抗蚀剂掩模，从而去除保护层的一部分，其中从保护层形成的保护壁保留在特征中。

32. 发明授权

US06531029B1 Vacuum plasma processor apparatus and method 有权
标题翻译：真空等离子体处理装置及方法
公开(公告)号：US06531029B1
公开(公告)日：2003-03-11
申请号：US09607326
申请日：2000-06-30
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
IPC分类号： H01L213065
CPC分类号： H01J37/321
摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic; fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.
摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过提供电磁而将腔室中的可电离气体激发到等离子体; 通过室顶部的电介质窗到等离子体的场。两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

33. 发明授权

US06514378B1 Method for improving uniformity and reducing etch rate variation of etching polysilicon 有权
标题翻译：改善蚀刻多晶硅的均匀性和降低蚀刻速率变化的方法
公开(公告)号：US06514378B1
公开(公告)日：2003-02-04
申请号：US09540549
申请日：2000-03-31
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin , Wenli Collison
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin , Wenli Collison
IPC分类号： H05H100
CPC分类号： H01J37/32642 , H01L21/32137
摘要： An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.
摘要翻译：一种用于在用含氟气体清洁和/或等离子体蚀刻室的调节之后以最小等离子体蚀刻速率变化连续处理一系列半导体衬底的装置和方法。该方法包括以下步骤：（a）将半导体衬底放置在等离子体蚀刻室中的衬底支撑件上，（b）在室中保持真空，（c）通过向腔室中提供蚀刻气体来蚀刻衬底的暴露表面并且激励蚀刻气体以在腔室中形成等离子体，（d）从腔室移除衬底; 并且（e）通过重复步骤（ad）连续地蚀刻腔室中的附加衬底，蚀刻步骤通过使围绕衬底的碳化硅边缘环上的H和Br的复合速率以足以抵消速率其中Br在基底上被消耗。该方法可以使用纯HBr或HBr与其他气体的组合进行。

34. 发明授权

US5856669A Laser beam scanning optical apparatus having means for generating moire fringes 失效
标题翻译：具有用于产生莫尔条纹的装置的激光束扫描光学装置
公开(公告)号：US5856669A
公开(公告)日：1999-01-05
申请号：US696066
申请日：1996-08-13
申请人： Yasushi Nagasaka , Kenji Takeshita , Hiroshi Hiraguchi , Jun Kohsaka , Nobuo Kanai , Keiji Ogoh
发明人： Yasushi Nagasaka , Kenji Takeshita , Hiroshi Hiraguchi , Jun Kohsaka , Nobuo Kanai , Keiji Ogoh
IPC分类号： B41J2/44 , B41J2/47 , G02B26/10 , G02B26/12 , G02B27/60
CPC分类号： B41J2/471 , G02B26/128 , G02B27/60
摘要： A laser beam scanning optical apparatus which has Moire fringes generating elements which is located near a position optically equivalent to a scanning surface and modulates a laser beam emitted from a laser source to generate Moire fringes. The Moire fringes generating elements comprises, for example, a first filter which has spatial grating and a second filter which has spatial grating which slants slightly with respect to the spatial grating of the first filter, the first filter and the second filter being arranged upstream and downstream respectively in an optical path. The laser beam scanning optical apparatus further has a light receiving element for receiving the Moire fringes generated by the Moire fringes generating elements. Focusing means for correcting a position of an image point of the laser beam is driven in accordance with an output of the light receiving element. For example, the light receiving element is a photoelectric element with a plurality of light receiving surfaces, each of which generates an electric signal in accordance with the laser beam incident thereto, and from a phase difference between the electric signals, the position of the image point is detected.
摘要翻译：一种激光束扫描光学装置，其具有位于光学上等同于扫描表面的位置附近的莫尔条纹产生元件，并且调制从激光源发射的激光束以产生莫尔条纹。莫尔条纹生成元件包括例如具有空间光栅的第一滤光器和具有相对于第一滤光器的空间光栅稍微倾斜的空间光栅的第二滤光器，第一滤光器和第二滤光器布置在上游，分别在光路中。激光束扫描光学装置还具有用于接收由莫尔条纹生成元件产生的莫尔条纹的光接收元件。根据光接收元件的输出来驱动用于校正激光束的图像点的位置的聚焦装置。例如，光接收元件是具有多个光接收表面的光电元件，每个光接收表面根据入射到其的激光束产生电信号，并且根据电信号之间的相位差，图像的位置点检测。

35. 发明授权

US5499045A Image forming apparatus with optical element support structure 失效
标题翻译：具有光学元件支撑结构的图像形成装置
公开(公告)号：US5499045A
公开(公告)日：1996-03-12
申请号：US125583
申请日：1993-09-23
申请人： Kenji Takeshita , Nobuo Kanai , Hitoshi Kageyama
发明人： Kenji Takeshita , Nobuo Kanai , Hitoshi Kageyama
IPC分类号： B41J2/44 , B41J2/47 , G02B26/10 , G02B26/12
CPC分类号： G02B26/125 , B41J2/471
摘要： A plurality of holding members individually hold some of a plurality of lenses in a scanning optical system. A base member holds and connects a plurality of the holding members at predetermined positional relations with rigidity higher than that of the holding member, and is attached to a structural member of an image forming apparatus.
摘要翻译：多个保持构件在扫描光学系统中分别保持多个透镜中的一些。基部构件以比保持构件的刚性高的预定位置关系固定并连接多个保持构件，并且附接到图像形成装置的结构构件。

36. 发明授权

US09395003B2 Process and device for reducing radioactive material of object containing radioactive material to safe level in living environment 有权
标题翻译：将放射性物质放射性物质减少到生活环境安全水平的工艺和装置
公开(公告)号：US09395003B2
公开(公告)日：2016-07-19
申请号：US14236884
申请日：2012-08-03
申请人： Shigeto Hayafuji , Takeshi Kamaya , Hiroshi Hayakawa , Yasuhiro Jinbo , Kaname Mogami , Kenji Takeshita , Masanori Aritomi , Kunio Yoshikawa , Saburo Kikuchi , Akio Ishido
发明人： Shigeto Hayafuji , Takeshi Kamaya , Hiroshi Hayakawa , Yasuhiro Jinbo , Kaname Mogami , Kenji Takeshita , Masanori Aritomi , Kunio Yoshikawa , Saburo Kikuchi , Akio Ishido
IPC分类号： A62D3/35 , F16K5/06 , G21F9/28 , G21F9/30
CPC分类号： F16K5/06 , G21F9/28 , G21F9/30
摘要： A process for reducing a radioactive material of an object containing a radioactive material to a safe level in a living environment includes releasing pressure including carrying out a heating process on an aqueous liquid that includes water, water-soluble liquid, or a mixture of water and water-soluble liquid, and the object in a state where temperature is less than or equal to a critical temperature of the aqueous liquid and pressure is greater than or equal to a saturated vapor pressure of the aqueous liquid when the object is immersed in the aqueous liquid to such a degree that the object is covered or to a greater degree and then abruptly releasing the pressure, and separating, after the releasing pressure, the mixture of the object and the aqueous liquid into liquid and solid.
摘要翻译：一种在生活环境中将含有放射性物质的物体的放射性物质还原到安全水平的方法包括释放压力，包括对包含水，水溶性液体或水与水的混合物的水性液体进行加热处理水溶性液体和物体在温度低于或等于水性液体的临界温度的状态下，并且当物体浸入水中时，压力大于或等于水性液体的饱和蒸气压液体达到使物体被覆盖或者更大程度的程度，然后突然释放压力，并且在释放压力之后将物体和水性液体的混合物分离成液体和固体。

37. 发明授权

US08911590B2 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：广义而言，本发明的实施例提供了一种改进的室清洁机构。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

38. 发明申请

US20140228612A1 PROCESS AND DEVICE FOR REDUCING RADIOACTIVE MATERIAL OF OBJECT CONTAINING RADIOACTIVE MATERIAL TO SAFE LEVEL IN LIVING ENVIRONMENT 有权
标题翻译：将放射性物质放射性物质放射生物用于生活环境安全水平的方法和装置
公开(公告)号：US20140228612A1
公开(公告)日：2014-08-14
申请号：US14236884
申请日：2012-08-03
申请人： Shigeto Hayafuji , Takeshi Kamaya , Hiroshi Hayakawa , Yasuhiro Jinbo , Kaname Mogami , Kenji Takeshita , Masanori Aritomi , Kunio Yoshikawa , Saburo Kikuchi , Akio Ishido
发明人： Shigeto Hayafuji , Takeshi Kamaya , Hiroshi Hayakawa , Yasuhiro Jinbo , Kaname Mogami , Kenji Takeshita , Masanori Aritomi , Kunio Yoshikawa , Saburo Kikuchi , Akio Ishido
IPC分类号： G21F9/30 , F16K5/06
CPC分类号： F16K5/06 , G21F9/28 , G21F9/30
摘要： Provided are a process and device for reducing radioactive material of an object containing the radioactive material to a safe level in a living environment.Included are a step of performing at least a step of carrying out a heating process on the object, into which radioactive material is absorbed and/or adsorbed from an environment or which absorbs and/or adsorbs radioactive material from an environment, in a state where temperature is less than or equal to the critical temperature of water and pressure is greater than or equal to the saturated vapor pressure of water, or a step of abruptly releasing the pressure; and a step of separating, after the above step, into liquid and solid.
摘要翻译：提供了一种用于将包含放射性物质的物体的放射性物质还原到生活环境中的安全水平的方法和装置。包括对在物体上进行放热物质的吸收和/或从环境中吸收和/或从环境中吸收和/或吸附放射性物质或从环境中吸收和/或吸附放射性物质的步骤的至少一个步骤，温度小于或等于水的临界温度，压力大于或等于水的饱和蒸汽压，或突然释放压力的步骤; 以及在上述步骤之后分离成液体和固体的步骤。

39. 发明授权

US08259763B2 Laser gain medium and laser oscillator using the same 有权
标题翻译：激光增益介质和激光振荡器使用相同
公开(公告)号：US08259763B2
公开(公告)日：2012-09-04
申请号：US13241740
申请日：2011-09-23
申请人： Kenji Takeshita , Shinya Ishii , Tomoko Saito , Junji Kawanaka , Noriaki Miyanaga , Kazuo Imazaki , Taku Saiki , Hiroaki Furuse
发明人： Kenji Takeshita , Shinya Ishii , Tomoko Saito , Junji Kawanaka , Noriaki Miyanaga , Kazuo Imazaki , Taku Saiki , Hiroaki Furuse
IPC分类号： H01S3/13
CPC分类号： H01S3/0604 , H01S3/025 , H01S3/0405 , H01S3/042 , H01S3/0612 , H01S3/0621 , H01S3/07 , H01S3/08 , H01S3/08072 , H01S3/08095 , H01S3/0813 , H01S3/09408 , H01S3/10061 , H01S3/1643 , H01S3/2316 , H01S3/2333
摘要： A laser gain medium includes an optical medium configured to transmit a laser beam and having an incident face, a first face, a second face opposing to the first face; and gain media configured to amplify the laser beam while reflecting the laser beam. At least one of the gain media is joined on a first face of the optical medium as a first face gain medium, and at least one of the remaining gain media is joined on a second face of the optical medium as a second face gain medium. The laser beam is incident into the optical medium, and is amplified by the first face gain medium and the second face gain medium while being alternately reflected by the first face gain medium and the second face gain medium.
摘要翻译：激光增益介质包括配置为透射激光束并具有入射面，第一面，与第一面相对的第二面的光学介质; 并且增益介质配置成放大激光束同时反射激光束。所述增益介质中的至少一个作为第一面增益介质连接在所述光介质的第一面上，并且所述剩余增益介质中的至少一个作为所述第二面增益介质连接在所述光介质的第二面上。激光束入射到光学介质中，并且被第一面增益介质和第二面增益介质放大，同时被第一面增益介质和第二面增益介质交替反射。

40. 发明授权

US07892445B1 Wafer electrical discharge control using argon free dechucking gas 有权
标题翻译：使用无氩脱胶气体进行晶圆放电控制
公开(公告)号：US07892445B1
公开(公告)日：2011-02-22
申请号：US11853968
申请日：2007-09-12
申请人： David Wei , Howard Dang , Masahiro Watanabe , Sean Kang , Kenji Takeshita , Mayumi Block , Stephen Sirard , Eric Hudson
发明人： David Wei , Howard Dang , Masahiro Watanabe , Sean Kang , Kenji Takeshita , Mayumi Block , Stephen Sirard , Eric Hudson
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.
摘要翻译：提供了通过在等离子体室中的静电电荷将具有低k电介质层的晶片脱扣保持在静电卡盘上的方法。静电钳位电压被去除。在等离子体室中提供基本上无氩的脱扣气体。从等离子体室中的脱扣气体形成脱扣等离子体。脱扣等离子体停止。

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