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31. 发明申请

US20100304505A1 PROCESSING METHOD AND STORAGE MEDIUM 有权
标题翻译：处理方法和储存介质
公开(公告)号：US20100304505A1
公开(公告)日：2010-12-02
申请号：US12791082
申请日：2010-06-01
申请人： Wataru Shimizu , Kazuhiro Kubota , Daisuke Hayashi
发明人： Wataru Shimizu , Kazuhiro Kubota , Daisuke Hayashi
IPC分类号： H01L21/30
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/76826 , Y10S438/935
摘要： There is provided a processing method for performing a recovery process on a damaged layer formed on a surface of a low-k film of a target substrate by introducing a processing gas containing a methyl group into a processing chamber. The method includes: increasing an internal pressure of the processing chamber up to a first pressure lower than a processing pressure for the recovery process by introducing a dilution gas into the processing chamber maintained in a depressurized state; then stopping the introduction of the dilution gas, and increasing the internal pressure of the processing chamber up to a second pressure as the processing pressure for the recovery process by introducing the processing gas into a region where the target substrate exists within the processing chamber; and performing the recovery process on the target substrate while the processing pressure is maintained.
摘要翻译：提供了一种处理方法，用于通过将含有甲基的处理气体引入处理室来对目标衬底的低k膜的表面上形成的损伤层进行恢复处理。该方法包括：通过将稀释气体引入维持在减压状态的处理室中，将处理室的内部压力提高到低于回收处理的处理压力的第一压力; 然后停止引入稀释气体，并且通过将处理气体引入到处理室内存在目标衬底的区域中，将处理室的内部压力提高到第二压力作为回收处理的处理压力; 并且在维持处理压力的同时对目标基板进行恢复处理。

32. 发明申请

US20100243167A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100243167A1
公开(公告)日：2010-09-30
申请号：US12748702
申请日：2010-03-29
申请人： Daisuke Hayashi
发明人： Daisuke Hayashi
IPC分类号： H01L21/465
CPC分类号： H01J37/32568 , H01J37/32018 , H01J37/32458 , H01J37/32577 , H01J37/32908 , H01J2237/024 , H01J2237/1502 , H01J2237/327 , H01J2237/334 , H01L21/67069
摘要： A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber.
摘要翻译：一种基板处理装置，包括：圆筒形室，其构造成容纳基板; 可移动电极，其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。在基板处理装置中，向可动电极和对置电极之间的第一空间施加高频电力，向其中引入处理气体，并且可动电极不与圆筒形室的侧壁接触。至少一个低电介质构件设置在可动电极和位于圆柱形腔的一侧的端壁之间的第二空间中。

33. 发明申请

US20100163179A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20100163179A1
公开(公告)日：2010-07-01
申请号：US12086634
申请日：2006-12-12
申请人： Shigeki Tozawa , Yusuke Muraki , Tadashi Iino , Daisuke Hayashi
发明人： Shigeki Tozawa , Yusuke Muraki , Tadashi Iino , Daisuke Hayashi
IPC分类号： B08B13/00
CPC分类号： H01L21/02057 , H01L21/6719 , H01L21/67207 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/66636 , H01L29/7848
摘要： [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber.[Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.
摘要翻译： [问题]提供一种能够防止氟化氢与室的内表面粘附的基板处理装置。 [解决手段]在室内容纳和处理基板W的装置包括用于将氟化氢气体供应到室40中的氟化氢气体供给路径61，其中形成室40的内表面的一部分或全部的未经表面氧化处理的Al或Al合金。室40包括封闭室主体51的上开口的盖52，并且盖52的至少内表面由未进行防氧化处理的Al或Al合金形成。

34. 发明申请

US20100146741A1 Button as Well as Button Body and Fixture for Such a Button 有权
标题翻译：按钮以及按钮体和这种按钮的夹具
公开(公告)号：US20100146741A1
公开(公告)日：2010-06-17
申请号：US12635891
申请日：2009-12-11
申请人： Daisuke Hayashi
发明人： Daisuke Hayashi
IPC分类号： A44B1/28
CPC分类号： A44B1/34
摘要： The present invention relates to a button comprising a button body and a fixture for fixing said button body to a support from the opposite side to the button body with the support therebetween, said button body having an insert hole defined by a wall, for the fixture to be inserted therein, and at least one protrusion for fixing on said support.According to the invention, there is provided a gap between said protrusion and said wall defining said insert hole. (FIG. 1A)
摘要翻译：按钮本体技术领域本发明涉及一种钮扣，包括按钮体和固定装置，用于将按钮主体固定到与按钮主体相对的一侧的支撑体上，其中支撑件在它们之间，所述按钮主体具有由壁限定的插入孔，以及至少一个用于固定在所述支撑上的突出部。根据本发明，提供了所述突起和限定所述插入孔的所述壁之间的间隙。（图1A）

35. 发明授权

US07686918B2 Magnetron plasma processing apparatus 有权
标题翻译：磁控管等离子体处理装置
公开(公告)号：US07686918B2
公开(公告)日：2010-03-30
申请号：US11016997
申请日：2004-12-21
申请人： Hidenori Sato , Daisuke Hayashi
发明人： Hidenori Sato , Daisuke Hayashi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/3266 , H01J37/32623 , H01J37/32633 , H01J37/3405
摘要： A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.
摘要翻译：磁控管等离子体处理装置具有插入处理空间和排气口之间的挡板，以将等离子体限制在处理室中的处理空间中。挡板具有允许处理空间和排气口彼此连通的通孔。挡板沿着板所在的位置处的磁场的磁力线设置。

36. 发明申请

US20100039621A1 PROJECTOR 有权
标题翻译：投影机
公开(公告)号：US20100039621A1
公开(公告)日：2010-02-18
申请号：US12507191
申请日：2009-07-22
申请人： Daisuke Hayashi , Kanji Yoshida
发明人： Daisuke Hayashi , Kanji Yoshida
IPC分类号： G03B21/14
CPC分类号： G03B33/12 , G02B5/005 , G02B27/1046 , G02B27/283 , G03B21/14 , G03B21/16 , G03B21/2073 , G03B21/208 , H04N9/3167
摘要： A projector includes: a light source; a polarization conversion element array having an entrance surface on which an effective entrance area and an ineffective entrance area are disposed to form stripes; a modulation device adapted to modulate a linearly polarized light beam emitted from the polarization conversion element array in accordance with an image signal; a projection device adapted to project the modulated light beam; a first light shielding section, a part of the entrance surface being provided with the first light shielding section adapted to shield a part of the incident light beam to the effective entrance area; and a first opening section, the first opening section being another area of the entrance surface than the part provided with the first light shielding section, at least a part of the first opening section reaches an end of the entrance surface.
摘要翻译：投影仪包括：光源; 偏振转换元件阵列，具有入射面，有效入射面积和无效入射面积设置在入射面上，形成条纹; 调制装置，其适于根据图像信号调制从偏振转换元件阵列发射的线偏振光束; 适于投影调制光束的投影装置; 第一遮光部，所述入射面的一部分设置有所述第一遮光部，所述第一遮光部适于将所述入射光的一部分遮蔽到所述有效入射区域; 以及第一开口部，所述第一开口部是与设置有所述第一遮光部的部分相比所述入射面的另一区域，所述第一开口部的至少一部分到达所述入射面的端部。

37. 发明授权

US07622017B2 Processing apparatus and gas discharge suppressing member 有权
标题翻译：处理装置和气体放电抑制构件
公开(公告)号：US07622017B2
公开(公告)日：2009-11-24
申请号：US10856797
申请日：2004-06-01
申请人： Shinji Himori , Shosuke Endoh , Kazuya Nagaseki , Tomoya Kubota , Daisuke Hayashi
发明人： Shinji Himori , Shosuke Endoh , Kazuya Nagaseki , Tomoya Kubota , Daisuke Hayashi
IPC分类号： C23C16/509 , C23C16/52 , C23F1/00 , H01L21/306
CPC分类号： H01L21/6831 , H01J2237/2001 , H01L21/67069
摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.
摘要翻译：一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径，将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体设置在电极下方。通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。

38. 发明授权

US07481240B2 Partial pressure control system, flow rate control system and shower plate used for partial pressure control system 有权
标题翻译：部分压力控制系统，流量控制系统和用于分压控制系统的淋浴板
公开(公告)号：US07481240B2
公开(公告)日：2009-01-27
申请号：US10863205
申请日：2004-06-09
申请人： Hideki Nagaoka , Hiroshi Koizumi , Jun Ooyabu , Tsuyoshi Shimazu , Hiroki Endo , Keiki Ito , Daisuke Hayashi
发明人： Hideki Nagaoka , Hiroshi Koizumi , Jun Ooyabu , Tsuyoshi Shimazu , Hiroki Endo , Keiki Ito , Daisuke Hayashi
IPC分类号： G05D11/13 , G05D16/20
CPC分类号： H01L21/67253 , H01L21/67017 , Y10T137/2499 , Y10T137/7722 , Y10T137/7759 , Y10T137/7761 , Y10T137/8733
摘要： A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a controller 25 which proportionally controls the operation of the valves 2 based on detection result of the pressure sensors 3, thereby relatively controlling pressures P1 and P2 of the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.
摘要翻译：分压控制系统45包括从操作气体供给管44分支并且可变地控制操作气体的压力传感器3和分别连接到每个阀2的压力传感器3并且检测操作气体的压力的两个阀2，以及控制器25，其基于压力传感器3的检测结果按比例地控制阀2的操作，从而相对控制两个阀的压力P1和P2。利用这种结构，可以减少操作气体的浪费，并且提高相对于设定变化等的响应性。

39. 再颁专利

USRE39939E1 Processing system 失效
标题翻译：处理系统
公开(公告)号：USRE39939E1
公开(公告)日：2007-12-18
申请号：US11055788
申请日：1998-04-08
申请人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
发明人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
IPC分类号： H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/3244 , H01J37/32477 , Y10T29/49002 , Y10T29/49117 , Y10T29/532 , Y10T29/53204
摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.
摘要翻译：处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。每个绝缘构件的一部分安装在气体排放孔中，从面向基座的上部电极的表面突出。

40. 发明申请

US20070169891A1 Focus ring and plasma processing apparatus 失效
标题翻译：对焦环和等离子体处理装置
公开(公告)号：US20070169891A1
公开(公告)日：2007-07-26
申请号：US10933383
申请日：2004-09-03
申请人： Akira Koshiishi , Hideaki Tanaka , Nobuyuki Okayama , Masaaki Miyagawa , Shunsuke Mizukami , Wataru Shimizu , Jun Hirose , Toshikatsu Wakaki , Tomonori Miwa , Jun Ooyabu , Daisuke Hayashi
发明人： Akira Koshiishi , Hideaki Tanaka , Nobuyuki Okayama , Masaaki Miyagawa , Shunsuke Mizukami , Wataru Shimizu , Jun Hirose , Toshikatsu Wakaki , Tomonori Miwa , Jun Ooyabu , Daisuke Hayashi
IPC分类号： C23F1/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/68757
摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.
摘要翻译：提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

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