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    • 31. 发明授权
    • High impedance antifuse
    • 高阻抗反熔丝
    • US07098083B2
    • 2006-08-29
    • US10652534
    • 2003-08-29
    • John A. FifieldRussell J. HoughtonWilliam R. Tonti
    • John A. FifieldRussell J. HoughtonWilliam R. Tonti
    • H01L21/82
    • H01L23/5252H01L2924/0002H01L2924/3011Y10S438/957H01L2924/00
    • A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between the substrate and said electrode of said second device, said second insulator having a second value of said given characteristic that is different from said first value. The electrodes of the diode and the FET are coupled to one another, and a source of programming energy is coupled to the diode to cause it to permanently decrease in resistivity when programmed. The programmed state of the diode is indicated by a current in the FET, which is read by a sense latch. Thus a small resistance change in the diode translates to a large signal gain/change in the latch. This allows the diode to be programmed at lower voltages.
    • 一种可编程元件,其具有第一二极管,其具有电极和设置在所述基板和所述第一器件的所述电极之间的第一绝缘体,所述第一绝缘体具有给定特性的第一值,以及设置有电极和第二绝缘体的FET 在所述基板和所述第二装置的所述电极之间,所述第二绝缘体具有与所述第一值不同的所述给定特性的第二值。 二极管和FET的电极彼此耦合,并且编程能量源耦合到二极管,以使其在编程时永久地降低电阻率。 二极管的编程状态由FET中的电流表示,该电流由读出锁存器读取。 因此,二极管中的小电阻变化转换为锁存器中的大信号增益/变化。 这允许二极管在较低的电压下被编程。
    • 32. 发明授权
    • Temperature programmable timing delay system
    • US06631503B2
    • 2003-10-07
    • US09755860
    • 2001-01-05
    • Louis L. HsuRajiv V. JoshiJohn A. Fifield
    • Louis L. HsuRajiv V. JoshiJohn A. Fifield
    • G06F1750
    • G06F1/206H03K2005/00143Y02D10/16
    • The present invention provides a temperature programmable timing delay system utilizing circuitry for generating a band-gap reference and for sensing the on-chip temperature of an integrated circuit chip. The circuitry outputs the sensed temperature as a binary output which is received by a programmable table circuit of the timing delay system. The programmable table circuit outputs a binary output corresponding to the received binary output. The timing delay system further includes a temperature dependent timing delay circuit having inputs for receiving the binary output of the programmable table circuit and an output for outputting a timing delay signal for delaying a clock by a timing delay corresponding to the binary output of the programmable table circuit. The band-gap reference can be a temperature independent band-gap reference voltage having a constant-voltage value or a temperature dependent band-gap reference current having a constant-current value. A method is also provided for varying a characteristic of a timing delay signal in accordance with variations of the on-chip temperature of an integrated circuit chip. The method includes the steps of generating a reference parameter; sensing the on-chip temperature of the integrated circuit chip by utilizing at least the reference parameter; providing the sensed on-chip temperature as a binary reading; using the binary reading for providing a respective binary code indicating a timing delay; and varying the characteristic of the timing delay signal, such as the signal's rise time, in accordance with the binary code.
    • 33. 发明授权
    • Redundant antifuse segments for improved programming efficiency
    • 冗余反熔丝段,以提高编程效率
    • US06621324B2
    • 2003-09-16
    • US09683808
    • 2002-02-19
    • John A. FifieldWilliam R. Tonti
    • John A. FifieldWilliam R. Tonti
    • H01H3776
    • H01L23/5252G11C17/18H01L2924/0002H01L2924/00
    • An antifuse structure for improved programming efficiency is disclosed wherein the antifuse structure including a first node providing a first voltage, a plurality of antifuse elements, and a plurality of first switches. The plurality of antifuse elements are commonly connected to the first node. The plurality of first switches are sequentially activated during a program mode to individually apply the first voltage to each antifuse element. The antifuse structure may include a second node to which a second voltage is provided. Each of the plurality of first switches may be coupled between the second node and a corresponding one of the plurality of antifuse elements. The antifuse structure may also include a third node to which a fuse latch is connected. A plurality of second switches may be coupled between the third node and a corresponding one of the plurality antifuse elements. The plurality of second switches may be simultaneously activated during a read mode.
    • 公开了一种用于提高编程效率的反熔丝结构,其中反熔丝结构包括提供第一电压的第一节点,多个反熔丝元件和多个第一开关。 多个反熔丝元件通常连接到第一节点。 多个第一开关在编程模式期间被依次启动,以分别对每个反熔丝元件施加第一电压。 反熔丝结构可以包括提供第二电压的第二节点。 多个第一开关中的每一个可以耦合在第二节点和多个反熔丝元件中的对应的一个之间。 反熔丝结构还可以包括连接熔丝闩锁的第三节点。 多个第二开关可以耦合在第三节点和多个反熔丝元件中的对应的一个之间。 多个第二开关可以在读取模式期间同时被激活。
    • 34. 发明授权
    • Programmable delay element and synchronous DRAM using the same
    • 可编程延迟元件和同步DRAM
    • US06400202B1
    • 2002-06-04
    • US09988846
    • 2001-11-19
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • G06F104
    • G11C7/222G11C7/04G11C7/1072H03K5/133H03K2005/00065
    • A programmable delay element includes a current source field-effect transistor (FET), a switch device, a precharge device, and an inverter device. The current source FET gates a programmable, predetermined amount of current. The switch device, which is coupled to the current source PET, receives an input signal having a first and second voltage level. The precharge device precharges the node coupled to the drain of the current source FET when the input signal is at a second voltage level. The inverter device, which is also coupled to the drain of the current source FET, outputs a delayed signal when the input signal is at a first voltage level, the delay of the delayed signal defined by the programmable, predetermined amount of current. The inverter device generates an inverter switch point that is substantially independent of parametric sensitivities, such as temperature variations. Also, the relative placement of the current source FET to the switch device of the present invention allows the programmable delay element to quickly reach a linear and predictable state of operation.
    • 可编程延迟元件包括电流源场效应晶体管(FET),开关器件,预充电器件和逆变器器件。 电流源FET栅极可编程,预定量的电流。 耦合到电流源PET的开关装置接收具有第一和第二电压电平的输入信号。 当输入信号处于第二电压电平时,预充电装置对耦合到电流源FET的漏极的节点进行预充电。 还耦合到电流源FET的漏极的逆变器装置在输入信号处于第一电压电平时输出延迟信号,延迟信号由可编程预定量的电流定义。 逆变器装置产生基本上与参数灵敏度(例如温度变化)无关的逆变器开关点。 此外,电流源FET相对于本发明的开关器件的放置允许可编程延迟元件快速达到线性和可预测的操作状态。