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31. 发明授权

US06537133B1 Method for in-situ endpoint detection for chemical mechanical polishing operations 有权
标题翻译：化学机械抛光操作的原位终点检测方法
公开(公告)号：US06537133B1
公开(公告)日：2003-03-25
申请号：US09672549
申请日：2000-09-28
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： B24B4900
CPC分类号： B24B47/12 , B24B37/013 , B24B37/205 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683
摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
摘要翻译：使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

32. 发明授权

US06516816B1 Spin-rinse-dryer 失效
公开(公告)号：US06516816B1
公开(公告)日：2003-02-11
申请号：US09544660
申请日：2000-04-06
申请人： Anwar Husain , Brian J. Brown , David G. Andeen , Svetlana Sherman , John M. White , Michael Sugarman , Makoto Inagawa , Manoocher Birang
发明人： Anwar Husain , Brian J. Brown , David G. Andeen , Svetlana Sherman , John M. White , Michael Sugarman , Makoto Inagawa , Manoocher Birang
IPC分类号： B08B302
CPC分类号： H01L21/67028 , Y10S134/902
摘要： An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction. A sensor adapted to facilitate desired flywheel position, an openable gripper having a remote actuator, a radiused gripper and a source of inert drying gas are also provided in individual embodiments.

33. 发明授权

US06511367B2 Carrier head with local pressure control for a chemical mechanical polishing apparatus 有权
公开(公告)号：US06511367B2
公开(公告)日：2003-01-28
申请号：US10059519
申请日：2002-01-28
申请人： Steven M. Zuniga , Hung Chih Chen , Manoocher Birang , Kapila Wijekoon , Sen-Hou Ko
发明人： Steven M. Zuniga , Hung Chih Chen , Manoocher Birang , Kapila Wijekoon , Sen-Hou Ko
IPC分类号： B24B500
CPC分类号： B24B37/30 , B24B37/32 , B24B49/16
摘要： A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the same purpose.

34. 发明授权

US06474712B1 Gripper for supporting substrate in a vertical orientation 失效
标题翻译：夹持器用于垂直方向支撑基板
公开(公告)号：US06474712B1
公开(公告)日：2002-11-05
申请号：US09559889
申请日：2000-04-26
申请人： Boris I. Govzman , Manoocher Birang , Michael Sugarman , Anwar Husain
发明人： Boris I. Govzman , Manoocher Birang , Michael Sugarman , Anwar Husain
IPC分类号： B66C100
CPC分类号： H01L21/68707 , Y10S414/141
摘要： A gripper assembly is provided which supports a substrate in a vertical orientation. The gripper assembly's end effectors contact only the edge of the substrate. In a first aspect the end effectors each comprise a first pair of opposed surfaces and an second pair of opposed surfaces, all of which simultaneously contact the substrate, holding the substrate in a clamp-type manner. In a second aspect the end effectors each comprise a lower pair of opposed surfaces which simultaneously contact the substrate, and an upper pair of opposed surfaces, larger than the thickness of the substrate, which limit the substrate from horizontal tilting. In the second aspect the end effectors can close at a first elevation where they do not contact the substrate, and can then elevate to gently contact and support the substrate in a pocket-like manner. In a third aspect one of the end effectors has two pairs of opposed surfaces which simultaneously contact the substrate, and the other end effector has two pairs of opposed surfaces which limit the substrate from horizontal tilting. In any aspect no moving parts are required to limit the substrate's vertical and horizontal movement. In a further aspect, fingers to which the end effectors are coupled, are bent so that the gripper is not positioned above the substrate.
摘要翻译：提供了一种夹持器组件，其以垂直取向支撑衬底。夹持器组件的端部执行器仅接触基板的边缘。在第一方面，端部执行器各自包括第一对相对表面和第二对相对表面，所述第二对相对表面同时接触基板，以夹紧方式保持基板。在第二方面，端部执行器各自包括同时接触基板的下一对相对表面，以及大于基板厚度的上对对相对表面，其将基板限制为水平倾斜。在第二方面，末端效应器可以在它们不接触衬底的第一高度处关闭，然后可以以袋状方式轻轻地接触和支撑衬底。在第三方面中，一个端部执行器具有两对同时接触基板的相对表面，而另一端部执行器具有两对相对的表面，这些对面限制了基板的水平倾斜。在任何方面，无需移动部件来限制基板的垂直和水平运动。在另一方面，端部执行器耦合到的手指被弯曲，使得夹持器不位于衬底上方。

35. 发明授权

US06383058B1 Adaptive endpoint detection for chemical mechanical polishing 有权
标题翻译：化学机械抛光的自适应端点检测
公开(公告)号：US06383058B1
公开(公告)日：2002-05-07
申请号：US09493859
申请日：2000-01-28
申请人： Manoocher Birang , Boguslaw Swedek
发明人： Manoocher Birang , Boguslaw Swedek
IPC分类号： B24B722
CPC分类号： B24B37/205 , B24B37/013 , G05B19/4163
摘要： An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad. A light beam is directed by an optical endpoint detection system to impinge the surface of the substrate. A signal from the optical endpoint detection system is monitored, and if a first endpoint criterion is not detected within a first time window, polishing is stopped at a default polishing time. If the first endpoint criterion is detected within the first time window, the signal is monitored for the second endpoint criterion, and polishing stops if the second endpoint criterion is detected.
摘要翻译：一种装置以及一种方法使基板的表面与抛光垫接触。光束由光学终点检测系统引导以撞击衬底的表面。监测来自光学终点检测系统的信号，并且如果在第一时间窗口内未检测到第一端点标准，则在默认抛光时间停止抛光。如果在第一时间窗口内检测到第一终点标准，则监视第二终点标准的信号，如果检测到第二终点标准，则抛光停止。

36. 发明授权

US6146259A Carrier head with local pressure control for a chemical mechanical polishing apparatus 失效
标题翻译：用于化学机械抛光装置的具有局部压力控制的承载头
公开(公告)号：US6146259A
公开(公告)日：2000-11-14
申请号：US907810
申请日：1997-08-08
申请人： Steven M. Zuniga , Hung Chih Chen , Manoocher Birang , Kapila Wijekoon , Sen-Hou Ko
发明人： Steven M. Zuniga , Hung Chih Chen , Manoocher Birang , Kapila Wijekoon , Sen-Hou Ko
IPC分类号： B24B37/30 , B24B37/32 , B24B49/16 , H01L21/304 , B24B47/02
CPC分类号： B24B37/30 , B24B37/32 , B24B49/16
摘要： A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the purpose.
摘要翻译：用于化学机械抛光装置的载体头包括柔性膜，其下表面提供基板接收表面。承载头可以包括与柔性膜的上表面接触的突起，以将增加的负载施加到基底的潜在的被抛光的区域。流体射流可用于此目的。

37. 发明授权

US5646814A Multi-electrode electrostatic chuck 失效
标题翻译：多电极静电卡盘
公开(公告)号：US5646814A
公开(公告)日：1997-07-08
申请号：US276010
申请日：1994-07-15
申请人： Shamouil Shamouilian , Samuel Broydo , Manoocher Birang
发明人： Shamouil Shamouilian , Samuel Broydo , Manoocher Birang
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6875 , H01L21/6831 , H01L21/6833
摘要： A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44). A substrate (42) is placed on the top surface (30) of the chuck (20). When the first electrode (22) of the chuck (20) is electrically biased with respect to the support (44), a first electrostatic force holds the chuck (20) onto the support (44). When the second electrode (24) of the chuck (20) is electrically biased with respect to the substrate (42) placed on the chuck (20), a second electrostatic force holds the substrate (42) to the chuck (20).
摘要翻译：描述了用于在处理期间保持硅晶片等基板（42）的多电极静电卡盘（20）。静电卡盘（20）包括（i）第一电极（22），（ii）第二电极（24）和（iii）具有下部分（26a）的绝缘体（26），中间部分（26b）和上部（26c）。绝缘体（26）的下部（26a）位于第一电极（22）的下面，并且具有适于将卡盘（20）放置在处理室（41）中的支撑件（44）上的底表面（28）。绝缘体（26）的中间部分（26b）位于第一和第二电极（22），（24）之间。绝缘体（26）的上部（26c）在第二电极（24）上，并且具有适于保持基板（42）的顶表面（30）。第一和第二电极（22,24）可以具有单极或双极结构。在操作中，卡盘（20）被放置在处理室（41）中的支撑件（44）上，使得卡盘（20）的底表面（28）搁置在支撑件（44）上。基板（42）被放置在卡盘（20）的顶表面（30）上。当卡盘（20）的第一电极（22）相对于支撑件（44）被电偏置时，第一静电力将卡盘（20）保持在支撑件（44）上。当卡盘（20）的第二电极（24）相对于放置在卡盘（20）上的基板（42）电气偏置时，第二静电力将基板（42）保持在卡盘（20）上。

38. 发明授权

US5151584A Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
标题翻译：用于半导体晶片蚀刻系统中端点检测的方法和装置
公开(公告)号：US5151584A
公开(公告)日：1992-09-29
申请号：US777770
申请日：1991-10-15
申请人： Peter Ebbing , Manoocher Birang
发明人： Peter Ebbing , Manoocher Birang
IPC分类号： B24B37/013 , B24D7/12 , G01B11/06 , G03F7/20 , H01L21/00 , H01L21/66
CPC分类号： B24B37/013 , B24D7/12 , G01B11/0683 , G03F7/70358 , H01L21/67253 , H01L22/26
摘要： A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: 1) scanning a semiconductor wafer with a narrowly focused laser beam; 2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; 3) parking the beam at the preferred spot; and 4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly responsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.
摘要翻译：一种用于半导体晶片蚀刻系统中端点检测的方法，其特征在于以下步骤：1）用窄聚焦的激光束扫描半导体晶片; 2）分析光束的反射部分以确定晶片的优选平坦区域上的优选停车点; 3）将梁停在优先位置; 以及4）分析光束的反射部分以确定何时优选的平坦区域被蚀刻通过。激光束的光点小于优选平坦区域的宽度，以消除在平坦区域的过渡边界处产生的噪声。优选地，晶片沿着相同的光束路径扫描多次，以允许比较几次扫描以确定优选的停车位。该装置包括一个波束形成组件; 扫描组件，其使激光束跨过晶片扫描; 检测组件，其响应于从所述晶片反射的所述激光束的一部分; 以及控制器，其操作激光器和扫描组件，并且响应于检测组件的输出。当检测组件的输出指示特征蚀刻曲线的停止时，控制器产生可以自动关闭蚀刻系统的端点检测信号。

39. 发明授权

US5097430A Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber 失效
标题翻译：基于处理室内的发射浓度显示过程终点信号的方法和装置
公开(公告)号：US5097430A
公开(公告)日：1992-03-17
申请号：US464836
申请日：1990-01-16
申请人： Manoocher Birang
发明人： Manoocher Birang
IPC分类号： G06F17/00 , H01J37/32
CPC分类号： H01J37/3266 , H01J37/32935 , H01J37/32972
摘要： A method facilitates the display of a filtered signal which represents the variation of light intensity in a processing chamber over time. The filtered signal filters out the effects of a magnetic field which causes plasma within the processing chamber to rotate. The magnetic field is generated by a signal with a period T. Light intensity within the process chamber is detected to produce a voltage signal with a voltage amplitude which varies based on the light intensity within the process chamber. The voltage amplitude of the voltage signal is digitally sampled at a sampling interval to obtain sample values. Running averages of a preselected number of sample values are calculated. The period T is set equal to the preselected number of sample values times the sampling interval times an integer. For each newly displayed running average, a rectangular box may be superimposed over a graph of the running averages in order to graphically display changes in slope. The computer is programmed to look for an anticipated sequence of slopes.
摘要翻译：一种方法有助于显示表示处理室中光强随时间变化的滤波信号。经滤波的信号滤除导致处理室内的等离子体旋转的磁场的影响。磁场由具有周期T的信号产生。处理室内的光强度被检测以产生电压幅度，其电压幅度基于处理室内的光强度而变化。以采样间隔对电压信号的电压振幅进行数字采样，以获得采样值。计算预选数量样本值的运行平均值。周期T被设置为等于采样间隔的预选数量乘以整数。对于每个新显示的跑步平均值，矩形框可以叠加在跑步平均线的图表上，以图形地显示斜率的变化。计算机被编程以寻找预期的斜坡序列。

40. 发明授权

US4953982A Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
标题翻译：用于半导体晶片蚀刻系统中端点检测的方法和装置
公开(公告)号：US4953982A
公开(公告)日：1990-09-04
申请号：US221979
申请日：1988-07-20
申请人： Peter Ebbing , Manoocher Birang
发明人： Peter Ebbing , Manoocher Birang
IPC分类号： G01B9/02 , B24B37/013 , B24D7/12 , G01B11/02 , G01B11/06 , G01M11/02 , G02B7/32 , G03F7/20 , G03F7/207 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/66
CPC分类号： B24B37/013 , B24D7/12 , G01B11/026 , G01B11/0683 , G02B7/32 , G03F7/70358 , H01L21/67069 , H01L21/67242 , H01L21/67253 , H01L22/26
摘要： A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: (1) scanning a semiconductor wafer with a narrowly focussed laser beam; (2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; (3) parking the beam at the preferred spot; and (4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly reponsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

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