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31. 发明授权

US4690704A Derivatives of tetrahydrobenzothiazole and herbicidal compositions containing the same as an active ingredient 失效
标题翻译：四氢苯并噻唑的衍生物和含有其作为活性成分的除草组合物
公开(公告)号：US4690704A
公开(公告)日：1987-09-01
申请号：US820278
申请日：1986-01-17
申请人： Katsumichi Aoki , Takafumi Shida , Hideo Arabori , Satoru Kumazawa , Susumu Shimizue , Takeo Watanave , Yohichi Kanda , Keigo Satake , Shiro Yamazaki , Hiroyasu Shinkawa , Tsuneaki Chida
发明人： Katsumichi Aoki , Takafumi Shida , Hideo Arabori , Satoru Kumazawa , Susumu Shimizue , Takeo Watanave , Yohichi Kanda , Keigo Satake , Shiro Yamazaki , Hiroyasu Shinkawa , Tsuneaki Chida
IPC分类号： A01N43/78 , A01N43/82 , C07D233/00 , C07D271/00 , C07D277/00 , C07D417/04 , A01N47/38
CPC分类号： C07D417/04 , A01N43/78 , A01N43/82
摘要： Disclosed herein are a derivative of tetrahydrobenzothiazole represented by the formula (I): ##STR1## wherein R represents a methyl group or ethyl group; R.sup.1 represents a hydrogen atom, a hydroxyl group, methoxy group or O.dbd.=together with R.sup.2 ; R.sup.2 represents a hydrogen atom or O.dbd.=together with R.sup.1 ; and X represents a methylene group, hydroxymethylene group, carbonyl group or --O-- with the proviso that R is not a methyl group when (1) R.sup.1 represents a hydroxyl group or methoxy group and X represents a methylene group or hydroxymethylene group or (2) R.sup.2 represents .dbd.O together with R.sup.1 and X represents a carbonyl group, and a herbicidal composition containing the same as an active ingredient.

32. 发明授权

US4577029A Derivative of tetrahydrobenzothiazole and herbicidal composition containing the same as active ingredient 失效
公开(公告)号：US4577029A
公开(公告)日：1986-03-18
申请号：US491049
申请日：1983-05-03
申请人： Katsumichi Aoki , Takafumi Shida , Yoichi Kanda , Keigo Satake , Hiroyasu Shinkawa , Shiro Yamazaki
发明人： Katsumichi Aoki , Takafumi Shida , Yoichi Kanda , Keigo Satake , Hiroyasu Shinkawa , Shiro Yamazaki
IPC分类号： A01N43/78 , A01N47/06 , C07D277/82 , C07D417/04 , C07D417/14
CPC分类号： C07D417/04 , A01N43/78 , A01N47/06 , C07D277/82 , C07D417/14
摘要： Disclosed herein are the derivatives of tetrahydrobenzothiazole represented by the general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom, a straight-chain alkyl group having 1 to 6 carbon atoms or branched-chain alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms or a phenyl group and R.sup.2 represents a chemical group selected from the group consisting of: ##STR2## wherein R.sup.3 represents a hydrogen atom, a methyl group or an acetyl group and R.sup.4 represents a hydrogen atom, a hydroxyl group, methoxy group or acetoxy group and herbicidal compositions containing at least one of the derivatives of tetrahydrobenzothiazole as an active ingredient.

33. 发明授权

US4551168A Herbicidal 2-(1,3,5-1H-triazin-2-one)-tetrahydrobenzothiazole derivatives, and compositions therefor 失效
标题翻译：除草剂2-（1,3,5-1H-三嗪-2-酮） - 四氢苯并噻唑衍生物及其组合物
公开(公告)号：US4551168A
公开(公告)日：1985-11-05
申请号：US596928
申请日：1984-04-05
申请人： Katsumichi Aoki , Takafumi Shida , Satoru Kumazawa , Susumu Shimizu , Yohichi Kanda , Keigo Satake , Shiro Yamazaki , Hiroyasu Shinkawa , Tsuneaki Chida , Hideo Arabori , Takeo Watanabe
发明人： Katsumichi Aoki , Takafumi Shida , Satoru Kumazawa , Susumu Shimizu , Yohichi Kanda , Keigo Satake , Shiro Yamazaki , Hiroyasu Shinkawa , Tsuneaki Chida , Hideo Arabori , Takeo Watanabe
IPC分类号： A01N43/78 , C07D417/04 , A01N43/64
CPC分类号： C07D417/04 , A01N43/78
摘要： Disclosed herein are a derivative of tetrahydrobenzothiazole represented by the formula (I): ##STR1## wherein R.sup.1 and R.sup.2 represent respectively a straight chain alkyl group having 1 to 6 carbon atoms or a branched chain alkyl group having 1 to 6 carbon atoms, and a herbicidal composition containing the same as an active ingredient.
摘要翻译：本文公开了由式（I）表示的四氢苯并噻唑的衍生物：其中R 1和R 2分别代表具有1至6个碳原子的直链烷基或具有1至6个碳原子的支链烷基，以及含有该活性成分的除草组合物。

34. 发明授权

US4166129A Agricultural and horticultural N-benzoyl-N'-trichloroethylidene hydrazine fungicides 失效
标题翻译：农业和园艺N-苯甲酰基-N'-三氯乙烯盐酸加氢杀真菌剂
公开(公告)号：US4166129A
公开(公告)日：1979-08-28
申请号：US845398
申请日：1977-10-25
申请人： Katsumichi Aoki , Susumu Shimizu , Keigo Satake , Shiro Yamazaki , Nobuo Hatakeyama
发明人： Katsumichi Aoki , Susumu Shimizu , Keigo Satake , Shiro Yamazaki , Nobuo Hatakeyama
IPC分类号： A01N37/28 , A01N37/40 , A01N37/48 , C07C109/18 , A01N9/20
CPC分类号： C07C251/72 , A01N37/28
摘要： This invention provides novel fungicidal compositions comprising a carrier and a fungicidally effective amount of a compound having the general formula ##STR1## WHEREIN EACH OF R and R' stands for a member of the group consisting of H, halogen, CH.sub.3, OCH.sub.3, OH and NO.sub.2.These novel compositions have been found to have a superior fungicidal effect on various plant diseases in the field of agriculture and horticulture.

35. 发明授权

US09028611B2 Method for producing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US09028611B2
公开(公告)日：2015-05-12
申请号：US12926995
申请日：2010-12-22
申请人： Shiro Yamazaki
发明人： Shiro Yamazaki
IPC分类号： C30B19/10 , C30B19/04 , C30B29/40 , C30B9/10 , C30B19/02 , C30B9/06
CPC分类号： C30B29/403 , C30B9/06 , C30B9/10 , C30B19/02 , C30B19/04 , C30B29/406
摘要： A method for producing a Group III nitride semiconductor includes reacting a molten mixture containing at least a Group III element and an alkali metal with a gas containing at least nitrogen, to thereby grow a Group III nitride semiconductor crystal on the seed crystal. The method includes forming a template substrate including a sapphire substrate and a first Group III nitride semiconductor layer as the seed crystal which is formed by vapor phase growth and which includes a c-plane as a main plane is employed, and the template substrate is placed and maintained in the molten mixture under conditions where crystal growth of the Group III nitride semiconductor is inhibited, to thereby partially melt back a plurality of separated parts of the first Group III nitride semiconductor layer to such a depth that the sapphire substrate is partially exposed.
摘要翻译：制备III族氮化物半导体的方法包括使至少含有III族元素和碱金属的熔融混合物与至少含有氮的气体反应，从而在晶种上生长III族氮化物半导体晶体。该方法包括形成包含蓝宝石衬底和第一III族氮化物半导体层的模板衬底，作为通过气相生长形成并且包括c面作为主平面的晶种，并且将模板衬底放置并且在III族氮化物半导体的晶体生长被抑制的条件下保持在熔融混合物中，从而部分地将第一III族氮化物半导体层的多个分离部分熔融回到蓝宝石衬底部分暴露的深度。

36. 发明授权

US08123856B2 Method and apparatus for producing group III nitride based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法和装置
公开(公告)号：US08123856B2
公开(公告)日：2012-02-28
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。提供本发明的装置用于制造III族氮化物基化合物半导体。该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于将从外部容器外部至少含有氮气的气体进料到反应器中。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

37. 发明申请

US20100301358A1 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor 有权
标题翻译：半导体基板，电子器件，光学器件及其制造方法
公开(公告)号：US20100301358A1
公开(公告)日：2010-12-02
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L29/20 , C30B9/12 , H01L29/772 , H01L33/30 , H01L31/0304 , H01L21/20
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

38. 发明申请

US20090294909A1 N-type group III nitride-based compound semiconductor and production method therefor 有权
标题翻译： N型III族氮化物系化合物半导体及其制造方法
公开(公告)号：US20090294909A1
公开(公告)日：2009-12-03
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
摘要翻译：本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。在该方法中，将碳和锗溶解在熔体中，并将锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

39. 发明申请

US20090197118A1 Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体，晶片和III族氮化物系化合物半导体器件的制造方法
公开(公告)号：US20090197118A1
公开(公告)日：2009-08-06
申请号：US12320642
申请日：2009-01-30
申请人： Seiji NAGAI , Shiro YAMAZAKI , Takayuki SATO , Yasuhide YAKUSHI , Koji OKUNO , Koichi GOSHONOO
发明人： Seiji NAGAI , Shiro YAMAZAKI , Takayuki SATO , Yasuhide YAKUSHI , Koji OKUNO , Koichi GOSHONOO
IPC分类号： C30B25/04 , B32B19/04
CPC分类号： H01L21/0254 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/02639
摘要： Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction Lsapph-AM of the sapphire substrate; and the m-axis of the layer, which is inclined by 30° from the a-axis thereof, is perpendicular to the main surface (inclined by 30° from the exposed R-plane surfaces) of the sapphire substrate.
摘要翻译：提供一种具有M面主面的III族氮化物系化合物半导体的制造方法。该方法采用蓝色蓝宝石衬底，该蓝宝石衬底具有主表面，其相对于R平面围绕由R平面和与其垂直的A平面形成的交线Lsapph-AM倾斜30°。暴露蓝宝石衬底的R平面表面，并且在衬底的主表面上形成二氧化硅掩模。 AlN缓冲层形成在暴露的R平面上。在AlN缓冲层上形成GaN层。在GaN生长的初始阶段，蓝宝石衬底的顶表面通过横向生长完全被GaN层覆盖。生长GaN层使得该层的a轴垂直于蓝宝石衬底的暴露的R平面表面; 层的c轴平行于蓝宝石衬底的轴方向Lsapph-AM; 并且从其a轴倾斜30°的层的m轴垂直于蓝宝石衬底的主表面（从露出的R平面倾斜30°）。

40. 发明授权

US07459023B2 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US07459023B2
公开(公告)日：2008-12-02
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B25/12
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

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