会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 33. 发明授权
    • Method for driving a semiconductor light source device for transmitting a signal
    • 驱动用于发送信号的半导体光源装置的方法
    • US06526075B2
    • 2003-02-25
    • US09105049
    • 1998-06-26
    • Natsuhiko Mizutani
    • Natsuhiko Mizutani
    • H01S310
    • H01S5/0625H01S5/06236H01S5/06258
    • In a driving method or apparatus for driving a semiconductor laser as a light source for optical transmission, oscillation light of the semiconductor laser can be switched between two different polarization modes by modulating a current injected into a portion of a waveguide of the laser. The laser has characteristics that light in both modes is emitted within a polarization-mode switching range of the current and that intensities of the light in both modes respectively vary in accordance with an amount of the current within the polarization-mode switching range. The current injected into the portion of the waveguide is urged to a bias point current in the switching range, and a modulation signal current is superimposed on the bias point current such that the emitted light in at least one of the modes is intensity-modulated in accordance of an amount of the modulation signal current.
    • 在用于驱动半导体激光器作为用于光学传输的光源的驱动方法或装置中,可以通过调制注入到激光器的波导的一部分中的电流来在两种不同的偏振模式之间切换半导体激光器的振荡光。 激光器具有两种模式的光在电流的偏振模式切换范围内发射的特性,并且两种模式中的光强度分别根据偏振模式切换范围内的电流量而变化。 注入到该波导部分的电流被推到切换范围内的偏置点电流,并且调制信号电流叠加在偏置点电流上,使得至少一个模式中的发射光被强度调制 根据调制信号电流的量。
    • 34. 发明授权
    • Near field exposure mask, method of forming resist pattern using the mask, and method of producing device
    • 近场曝光掩模,使用掩模形成抗蚀剂图案的方法,以及制造装置的方法
    • US07968256B2
    • 2011-06-28
    • US12376426
    • 2007-10-05
    • Toshiki ItoNatsuhiko MizutaniAkira Terao
    • Toshiki ItoNatsuhiko MizutaniAkira Terao
    • G03F1/00G03F7/00
    • G03F7/2014B82Y10/00G03F1/50G03F7/70325
    • Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2 formed above the transparent mask matrix l0 and containing silicon; a reflective layer l1 formed between the transparent mask matrix l0 and the light shielding layer l2; and an opening pattern provided in the reflective layer l1 and the light shielding layer l2 and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0 and the reflective layer l1 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
    • 提供一种可以抑制曝光期间掩模的发热的近场曝光掩模,并且还可以抑制每个镜头的抗蚀剂图案的尺寸变化,以及使用其的抗蚀剂图案形成方法。 近场曝光掩模包括透明掩模矩阵10; 形成在透明掩模矩阵10上方并含有硅的遮光层12; 形成在透明掩模矩阵10和遮光层12之间的反射层l1; 以及设置在反射层11和遮光层12中并且尺寸小于曝光波长λ(nm)的开口图案,其中透明掩模矩阵10和反射层11之间的界面处的反射率高于 在透明掩模矩阵和形成在透明掩模矩阵上的遮光层之间的界面处的反射率,并且包含在透明掩模矩阵和遮光层之间没有反射层的近场曝光掩模的硅。
    • 38. 发明授权
    • Information recording and reproducing apparatus, information recording medium and information recording apparatus
    • 信息记录和再现装置,信息记录介质和信息记录装置
    • US07606117B2
    • 2009-10-20
    • US11387686
    • 2006-03-24
    • Natsuhiko MizutaniTomohiro Yamada
    • Natsuhiko MizutaniTomohiro Yamada
    • G11B11/00
    • G11B11/10536G11B5/6011G11B7/00454G11B7/122G11B7/1387G11B11/10543G11B11/10554G11B11/1058G11B2005/0021
    • An information recording and reproducing apparatus including a recording medium that includes at least a substrate, a reflection layer disposed on the substrate, and a recording layer disposed so as to interpose the reflection layer between the substrate and the recording layer, and a near-field optical head, disposed close to the recording medium, for irradiating the recording medium with near-field light to effect recording and reproduction of information. The near-field optical head includes a light-blocking metal film which includes a dielectric base material provided with a small opening and which is disposed opposite to the reflection layer disposed on the substrate, so that the light-blocking metal film and the reflection layer constitute an optical resonator to increase intensity of the near-field light. The optical resonator satisfies the following resonance condition: 4πL/λ+φ1+φ2=2mπ, wherein L represents an optical path between a bottom surface, of the near-field optical head, at which the light-blocking metal film is disposed; λ represents a wavelength in a vacuum of a light source used in the near-field optical head; φ1 represents a phase shift due to reflection by the light-blocking metal film; φ2 represents a phase shift due to reflection by the reflection layer; and m represents a positive integer.
    • 一种信息记录和再现装置,包括至少包括基板,设置在基板上的反射层和设置成将反射层插入在基板和记录层之间的记录层的记录介质和近场 光学头,靠近记录介质设置,用于用近场光照射记录介质以进行信息的记录和再现。 近场光学头包括遮光金属膜,该遮光金属膜包括设置有小开口的电介质基材,并且与设置在基板上的反射层相对地设置,使得遮光金属膜和反射层 构成光谐振器以增加近场光的强度。 光谐振器满足以下谐振条件:4piL /λ+ phi1 + phi2 = 2mpi,其中L表示在设置有遮光金属膜的近场光学头的底表面之间的光路; λ表示在近场光学头中使用的光源的真空中的波长; phi1表示由于遮光金属膜的反射而产生的相移; phi2表示由反射层的反射引起的相移; m表示正整数。
    • 39. 发明申请
    • SENSOR APPARATUS
    • 传感器装置
    • US20090021742A1
    • 2009-01-22
    • US12174776
    • 2008-07-17
    • Kentaro FurusawaNatsuhiko MizutaniRyo Kuroda
    • Kentaro FurusawaNatsuhiko MizutaniRyo Kuroda
    • G01N21/55
    • G01N21/553
    • A plasmon sensor apparatus using a metallic fine periodic structure designed to reduce the dependences of the resonance wavelength and sensitivity on the incident angle. The plasmon sensor apparatus has a sensing element including a metallic member having periodic slit openings and metallic portions, and a substrate on which the metallic member is held, a light source which emits light so that the light is incident on the sensing element, and a photodetector which detects light obtained from the light source. If the period of the slit openings is Λ; the width of the metallic portions is d; and the thickness of the metallic member is h, the aspect ratio h/(Λ−d) of the slit openings is 3 or higher and the opening width (Λ−d) is equal to or smaller than the wavelength of light applied from the light source to the sensing element.
    • 一种使用金属微细周期结构的等离子体激元传感器装置,其设计用于降低谐振波长和灵敏度对入射角的依赖性。 等离子体激元传感器装置具有感测元件,其包括具有周期性狭缝开口的金属部件和金属部分,以及保持金属部件的基板,发射光以使得光入射到感测元件上的光源,以及 检测从光源获得的光的光电检测器。 如果狭缝开口的周期是λ; 金属部分的宽度为d; 并且金属构件的厚度为h,狭缝开口的长宽比h /(λ-d)为3以上,开口宽度(λ-d)为从 光源传感元件。
    • 40. 发明申请
    • RESIST PATTERN FORMING METHOD
    • 电阻图案形成方法
    • US20080199817A1
    • 2008-08-21
    • US12102152
    • 2008-04-14
    • Natsuhiko MizutaniYasuhisa Inao
    • Natsuhiko MizutaniYasuhisa Inao
    • G03F7/00
    • G03F7/7035B82Y10/00G03F1/36G03F1/50G03F7/2014G03F7/70325
    • A resist pattern forming method includes preparing a photomask for generating near-field light having an intensity distribution. The photomask has a light-transmissible base member, and a light-blocking film. The film has a micro-aperture adapted to expose an object to near-field light seeping out from the micro-aperture. The photomask has a periodic structure and a shift of a phase. The shift exists between recesses or projections adjacent to the micro-aperture. A difference in the intensity distribution of the near-field light in the area of the aperture is reduced. The photomask is arranged close to a photoresist film on a substrate. Light from a light source irradiates the photoresist film by way of the photomask to form a latent image based on the micro-aperture, and the photoresist film is developed to form a resist pattern on the substrate based on the latent image.
    • 抗蚀剂图案形成方法包括制备用于产生具有强度分布的近场光的光掩模。 光掩模具有透光性基材和遮光膜。 该膜具有适于将物体暴露于从微孔渗出的近场光的微孔。 光掩模具有周期性结构和相位偏移。 在与微孔相邻的凹部或突起之间存在偏移。 孔径区域中的近场光的强度分布的差异减小。 光掩模布置在基板上的光致抗蚀剂膜附近。 来自光源的光通过光掩模照射光致抗蚀剂膜,以基于微孔形成潜像,并且基于潜像在光致抗蚀剂图案上显影以在基板上形成抗蚀剂图案。