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31. 发明授权

US09062585B2 Large-capacity metal catalyst carrier and catalytic converter using same 有权
标题翻译：大容量金属催化剂载体和催化转化器使用相同
公开(公告)号：US09062585B2
公开(公告)日：2015-06-23
申请号：US13639583
申请日：2011-04-05
申请人： Myoung Soo Kim , Sun Hwan Ko , Tae Hyun Hur , Tong Bok Kim , Sung Chul Yang
发明人： Myoung Soo Kim , Sun Hwan Ko , Tae Hyun Hur , Tong Bok Kim , Sung Chul Yang
IPC分类号： B01D50/00 , F01N3/28 , B01D53/94 , B01J23/34 , B01J23/42 , B01J23/44 , B01J23/50 , B01J23/72 , B01J23/75 , B01J23/755 , B01J37/02 , B01J35/04
CPC分类号： F01N3/2814 , B01D53/94 , B01J23/34 , B01J23/42 , B01J23/44 , B01J23/50 , B01J23/72 , B01J23/75 , B01J23/755 , B01J35/04 , B01J37/0225 , F01N3/281 , F01N3/2842 , F01N3/2875 , F01N2330/02 , F01N2450/24 , F01N2450/30 , F01N2510/08 , F01N2530/02 , F01N2590/02 , Y10T428/24157
摘要： Provided is a large-capacity metal catalyst support and a catalytic converter using the same, in which a number of unit catalyst support blocks are changed in a form of being effectively assembled so as to be applied to a catalytic converter that is required for processing a large amount of exhaust gas such as large vessels or plants employing a number of large-scale internal combustion engines, or large food processing devices, to thus easily assemble the unit catalyst support blocks into a large-scale assembled structure. The catalyst support includes: a number of unit catalyst support blocks in which cell formation bodies formed of a number of hollow cells that are aligned in a longitudinal direction are accommodated and stacked in a polygonal supporter wherein a catalyst is coated on the surfaces of the hollow cells; and a number of assembly members each for fixing a pair of adjacent supports that mutually contact between the stacked unit catalyst support blocks.
摘要翻译：提供了一种大容量金属催化剂载体和使用该载体的催化转化器，其中多个单元催化剂载体块被改变成有效组装的形式，以便施加到加工所需的催化转化器大量的废气，大量的大型内燃机的大型船舶或者是大型的内燃机的大型的食品加工装置等，因此容易将单元催化剂载体块组装成大规模的组装结构。催化剂载体包括：多个单位催化剂载体块，其中容纳并沿纵向排列的多个中空细胞形成的细胞形成体并堆积在多边形支持体中，其中催化剂涂覆在中空的表面上细胞; 以及多个组装构件，每个组件用于固定在层叠的单元催化剂支撑块之间相互接触的一对相邻的支撑件。

32. 发明授权

US08409516B2 Monolith, catalyst convertor for purifying exhaust gas using the same and method for manufacturing the catalyst convertor 有权
标题翻译： Monolith，用于使用该催化剂净化废气的催化剂转化器和用于制造催化剂转化器的方法
公开(公告)号：US08409516B2
公开(公告)日：2013-04-02
申请号：US12678409
申请日：2008-09-17
申请人： Myoung Soo Kim , Jae Yeong Lee , Hyun Chul Lim , Sang Dong Jeong , Yong Sul Song , Sung Chul Yang
发明人： Myoung Soo Kim , Jae Yeong Lee , Hyun Chul Lim , Sang Dong Jeong , Yong Sul Song , Sung Chul Yang
IPC分类号： B01D50/00
CPC分类号： B09B3/00 , B01D53/9454 , B01D2255/1021 , B01D2255/1023 , B01D2255/1025 , B01D2257/90 , F01N3/2026 , F01N13/0097 , F01N13/017 , F01N2240/20 , F01N2260/06 , F01N2330/32 , F01N2330/34 , F01N2330/38 , Y02T10/22 , Y02T10/26
摘要： Provided is a catalyst converter for purifying exhaust gas and a method for manufacturing the catalyst converter, in which a heater is disposed between inner/outer monoliths, to thereby heighten a heat transfer efficiency and induce a uniform catalytic reaction, and to thereby enhance a processing performance, and minimize an electric power consumption and miniaturize a device. The catalyst converter includes: a heater having a winding portion which is wound so as to have a space therein and a pair of electric power terminals; inner and outer monoliths which are inserted in the inner and outer circumferential portions of the heater winding portion wherein each of the inner and outer monoliths includes a number of hollow cells on the surfaces of which catalysts have been coated and which are formed in the lengthy direction; and a housing in which a support assembly is assembled.
摘要翻译：本发明提供一种净化废气的催化剂转化体及其制造方法，其中在内/外整料之间设置加热器，从而提高传热效率并引起均匀的催化反应，从而提高加工性性能，并最大限度地减少电力消耗并使设备小型化。催化剂转换器包括：具有被卷绕成具有空间的绕组部分和一对电力端子的加热器; 内部和外部整体，其插入加热器绕组部分的内周和外圆周部分，其中每个内部和外部整料在其表面上包括多个中空细胞，其中已经涂覆了催化剂，并且沿长度方向形成 ; 以及其中组装有支撑组件的壳体。

33. 发明申请

US20130028808A1 LARGE-CAPACITY METAL CATALYST CARRIER AND CATALYTIC CONVERTER USING SAME 有权
标题翻译：大容量金属催化剂载体和催化转化器
公开(公告)号：US20130028808A1
公开(公告)日：2013-01-31
申请号：US13639583
申请日：2011-04-05
申请人： Myoung Soo Kim , Sun Hwan Ko , Tae Hyun Hur , Tong Bok Kim , Sung Chul Yang
发明人： Myoung Soo Kim , Sun Hwan Ko , Tae Hyun Hur , Tong Bok Kim , Sung Chul Yang
IPC分类号： B32B3/12 , F01N3/28 , B01J23/889 , B01J23/86 , B01J23/89
CPC分类号： F01N3/2814 , B01D53/94 , B01J23/34 , B01J23/42 , B01J23/44 , B01J23/50 , B01J23/72 , B01J23/75 , B01J23/755 , B01J35/04 , B01J37/0225 , F01N3/281 , F01N3/2842 , F01N3/2875 , F01N2330/02 , F01N2450/24 , F01N2450/30 , F01N2510/08 , F01N2530/02 , F01N2590/02 , Y10T428/24157
摘要： Provided is a large-capacity metal catalyst support and a catalytic converter using the same, in which a number of unit catalyst support blocks are changed in a form of being effectively assembled so as to be applied to a catalytic converter that is required for processing a large amount of exhaust gas such as large vessels or plants employing a number of large-scale internal combustion engines, or large food processing devices, to thus easily assemble the unit catalyst support blocks into a large-scale assembled structure. The catalyst support includes: a number of unit catalyst support blocks in which cell formation bodies formed of a number of hollow cells that are aligned in a longitudinal direction are accommodated and stacked in a polygonal supporter wherein a catalyst is coated on the surfaces of the hollow cells; and a number of assembly members each for fixing a pair of adjacent supports that mutually contact between the stacked unit catalyst support blocks.
摘要翻译：提供了一种大容量金属催化剂载体和使用该载体的催化转化器，其中多个单元催化剂载体块被改变成有效组装的形式，以便施加到加工所需的催化转化器大量的废气，大量的大型内燃机的大型船舶或者是大型的内燃机的大型的食品加工装置等，因此容易将单元催化剂载体块组装成大规模的组装结构。催化剂载体包括：多个单位催化剂载体块，其中容纳并沿纵向排列的多个中空细胞形成的细胞形成体并堆积在多边形支持体中，其中催化剂涂覆在中空的表面上细胞; 以及多个组装构件，每个组件用于固定在层叠的单元催化剂支撑块之间相互接触的一对相邻的支撑件。

34. 发明授权

US08143677B2 Transistor, a transistor arrangement and method thereof 有权
标题翻译：晶体管，晶体管结构及其方法
公开(公告)号：US08143677B2
公开(公告)日：2012-03-27
申请号：US12659107
申请日：2010-02-25
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7833 , H01L29/41758 , H01L29/66575
摘要： A transistor, transistor arrangement and method thereof are provided. The example method may include determining whether a gate width of the transistor has been adjusted; and adjusting a distance between a higher-concentration impurity-doped region of the transistor and a device isolation layer of the transistor based on the adjusted gate width if the determining step determines the gate width of the transistor is adjusted. The example transistor may include a first device isolation layer defining a first active region, a first gate line having a first gate width and crossing over the first active region, a first lower-concentration impurity-doped region formed in the first active region at first and second sides of the first gate line and a first higher-concentration impurity-doped region formed in the lower-concentration impurity-doped region and not in contact with the gate line and the device-isolation layer.
摘要翻译：提供一种晶体管，晶体管结构及其方法。示例性方法可以包括确定晶体管的栅极宽度是否已被调整; 以及如果所述确定步骤确定所述晶体管的栅极宽度，则基于所述调整的栅极宽度来调整所述晶体管的高浓度杂质掺杂区域和所述晶体管的器件隔离层之间的距离。示例性晶体管可以包括限定第一有源区的第一器件隔离层，具有第一栅极宽度并与第一有源区交叉的第一栅极线，首先在第一有源区中形成的第一低浓度杂质掺杂区和第一栅极线的第二面和形成在低浓度杂质掺杂区域中的第一较高浓度杂质掺杂区，并且不与栅极线和器件隔离层接触。

35. 发明申请

US20090263948A1 METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：金属氧化物半导体场效应晶体管（MOSFET）及其制造方法
公开(公告)号：US20090263948A1
公开(公告)日：2009-10-22
申请号：US12498000
申请日：2009-07-06
申请人： Myoung-Soo KIM
发明人： Myoung-Soo KIM
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/823462 , H01L21/823456
摘要： A Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is provided. The MOSFET includes a semiconductor substrate, a device isolating region disposed on a predetermined portion of the semiconductor substrate to define an active region, a source region and a drain region spaced apart from each other about a channel region within the active region, and a gate electrode formed on the active region between the source region and the drain region. Furthermore, the MOSFET also includes a gate insulating layer formed between the active region and the gate electrode. The gate insulating layer includes a central gate insulating layer disposed under central portion of the gate electrode, an edge gate insulating layer disposed under an edge portion of the gate electrode to have a bottom surface level with a bottom of the central gate insulating layer and an upper surface protruding to be higher than an upper surface of the central gate insulating layer.
摘要翻译：提供金属氧化物半导体场效应晶体管（MOSFET）。 MOSFET包括半导体衬底，设置在半导体衬底的预定部分上以限定有源区的器件隔离区，围绕有源区内的沟道区彼此隔开的源区和漏区，以及栅极在源极区域和漏极区域之间的有源区域上形成电极。此外，MOSFET还包括在有源区和栅电极之间形成的栅极绝缘层。所述栅极绝缘层包括设置在所述栅极电极的中心部分的中心栅极绝缘层，设置在所述栅极电极的边缘部分下方的边缘栅极绝缘层，以具有与所述中心栅极绝缘层的底部相对的底面电平，上表面突出高于中心栅极绝缘层的上表面。

36. 发明申请

US20080164469A1 Semiconductor device with measurement pattern in scribe region 审中-公开
标题翻译：具有划线区域测量图案的半导体器件
公开(公告)号：US20080164469A1
公开(公告)日：2008-07-10
申请号：US12005180
申请日：2007-12-26
申请人： Myoung-soo Kim , Yong-chan Kim
发明人： Myoung-soo Kim , Yong-chan Kim
IPC分类号： H01L23/58
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L22/34 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes pads disposed in a chip region of a semiconductor substrate and line patterns disposed in a scribe region of the semiconductor substrate and extending toward the pads. The line patterns each have a line-width that is less than a predetermined distance between adjacent pads. Thus, respective interconnection lines connected to the pads are not short-circuited to each-other through the line patterns in the remaining scribe region after the chip region is sawed into a semiconductor chip.
摘要翻译：半导体器件包括设置在半导体衬底的芯片区域中的焊盘和设置在半导体衬底的划线区域中且朝向焊盘延伸的线图案。线图案各自具有小于相邻垫之间的预定距离的线宽。因此，在芯片区域被锯成半导体芯片之后，连接到焊盘的各个互连线在剩余划线区域中的线图案之间不会彼此短路。

37. 发明申请

US20060278920A1 Metal oxide semiconductor field-effect transistor (MOSFET) and method of fabricating the same 审中-公开
标题翻译：金属氧化物半导体场效应晶体管（MOSFET）及其制造方法
公开(公告)号：US20060278920A1
公开(公告)日：2006-12-14
申请号：US11443385
申请日：2006-05-30
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L21/8234
CPC分类号： H01L21/823462 , H01L21/823456
摘要： A Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is provided. The MOSFET includes a semiconductor substrate, a device isolating region disposed on a predetermined portion of the semiconductor substrate to define an active region, a source region and a drain region spaced apart from each other about a channel region within the active region, and a gate electrode formed on the active region between the source region and the drain region. Furthermore, the MOSFET also includes a gate insulating layer formed between the active region and the gate electrode. The gate insulating layer includes a central gate insulating layer disposed under central portion of the gate electrode, an edge gate insulating layer disposed under an edge portion of the gate electrode to have a bottom surface level with a bottom of the central gate insulating layer and an upper surface protruding to be higher than an upper surface of the central gate insulating layer.
摘要翻译：提供金属氧化物半导体场效应晶体管（MOSFET）。 MOSFET包括半导体衬底，设置在半导体衬底的预定部分上以限定有源区域的器件隔离区域，围绕有源区域内的沟道区域彼此间隔开的源极区域和漏极区域，以及栅极在源极区域和漏极区域之间的有源区域上形成电极。此外，MOSFET还包括在有源区和栅电极之间形成的栅极绝缘层。所述栅极绝缘层包括设置在所述栅极电极的中心部分的中心栅极绝缘层，设置在所述栅极电极的边缘部分下方的边缘栅极绝缘层，以具有与所述中心栅极绝缘层的底部的底面水平面，上表面突出高于中心栅极绝缘层的上表面。

38. 发明申请

US20060254513A1 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
标题翻译：催化剂增强化学气相沉积装置及其沉积方法
公开(公告)号：US20060254513A1
公开(公告)日：2006-11-16
申请号：US11405552
申请日：2006-04-18
申请人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
发明人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/44 , C23C16/46
摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.
摘要翻译：催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。

39. 发明申请

US20060234435A1 Semiconductor device having one-time programmable ROM and method of fabricating the same 失效
公开(公告)号：US20060234435A1
公开(公告)日：2006-10-19
申请号：US11448200
申请日：2006-06-07
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L21/8238
CPC分类号： H01L27/11526 , H01L27/11531 , H01L29/66825
摘要： A semiconductor device with a one-time programmable (OTP) ROM disposed over a semiconductor substrate including a memory cell area and a peripheral circuit area includes a MOS transistor and an OTP ROM capacitor. The MOS transistor has a floating gate electrode and is disposed at the memory cell area. The OTP ROM capacitor has a lower electrode, an upper intermetal dielectric, and an upper electrode which are stacked in the order named. The OTP ROM capacitor is disposed on the MOS transistor, and the floating gate electrode and the lower electrode are connected by a floating gate plug to constitute an electrically insulated conductive structure. The upper intermetal dielectric is made of at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride and may be disposed on an entire surface of the semiconductor substrate. A capacitor formed together with the OTP ROM is disposed at the peripheral circuit region.

40. 发明申请

US20050194648A1 Semiconductor device including a transistor having low threshold voltage and high breakdown voltage 有权
标题翻译：半导体器件包括具有低阈值电压和高击穿电压的晶体管
公开(公告)号：US20050194648A1
公开(公告)日：2005-09-08
申请号：US11066492
申请日：2005-02-28
申请人： Myoung-soo Kim
发明人： Myoung-soo Kim
IPC分类号： H01L21/283 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/78
CPC分类号： H01L21/823418 , H01L21/823462 , H01L27/088
摘要： A semiconductor device, including a transistor having low threshold voltage and high breakdown voltage, includes a first gate electrode, a second gate electrode, and a third gate electrode arranged on a predetermined first, second, and third region of a semiconductor substrate, respectively, a first gate insulating layer, a second gate insulating layer, and a third gate insulating layer, which are interposed between the first, second and third gate electrode and the semiconductor substrate, respectively, and first, second, and third junction regions arranged in the first, second, and third region of the semiconductor substrate, respectively, on both sides of the first, second and third gate electrode, respectively, wherein a thickness of the first gate insulating layer is greater than a thickness of either of the second or third gate insulating layers, and wherein a structure of the first junction region and a structure of the third junction region are the same.
摘要翻译：包括具有低阈值电压和高击穿电压的晶体管的半导体器件分别包括布置在半导体衬底的预定第一，第二和第三区域上的第一栅电极，第二栅电极和第三栅电极，第一栅极绝缘层，第二栅极绝缘层和第三栅极绝缘层，分别介于第一，第二和第三栅电极与半导体衬底之间，第一，第二和第三结区域布置在分别在第一，第二和第三栅极的两侧分别具有半导体衬底的第一，第二和第三区域，其中第一栅极绝缘层的厚度大于第二栅极绝缘层的厚度栅极绝缘层，并且其中第一结区域的结构和第三结区域的结构相同。

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