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1. 发明申请

US20130175590A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM, AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，半导体系统和半导体器件的制造方法
公开(公告)号：US20130175590A1
公开(公告)日：2013-07-11
申请号：US13614918
申请日：2012-09-13
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/76224 , H01L23/60 , H01L27/0629 , H01L27/0676 , H01L27/0805 , H01L29/861 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: an element isolation region formed in a substrate that defines an active region, a conductive layer formed on the active region, a first insulating film formed between the active region and the conductive layer and having a first thickness, and a second insulating film formed between the active region and the conductive layer and spans at least part of a boundary between the active region and the element isolation region and having a second thickness which is greater than the first thickness.
摘要翻译：半导体器件包括：形成在限定有源区的衬底中的元件隔离区，在有源区上形成的导电层，形成在有源区和导电层之间并具有第一厚度的第一绝缘膜，第二绝缘膜形成在有源区和导电层之间的绝缘膜，并跨越有源区和元件隔离区之间的边界的至少一部分，并且具有大于第一厚度的第二厚度。

2. 发明授权

US08123553B2 Conductor base and finger module of air circuit breaker 有权
标题翻译：空气断路器导体底座和指模组件
公开(公告)号：US08123553B2
公开(公告)日：2012-02-28
申请号：US12651954
申请日：2010-01-04
申请人： Gae Goo Lyu , Ki Cheol Na , Myoung Soo Kim , Hyun Jae Kim
发明人： Gae Goo Lyu , Ki Cheol Na , Myoung Soo Kim , Hyun Jae Kim
IPC分类号： H01R13/73
CPC分类号： H01H1/42 , H01H1/5833 , H01H71/082 , H02B11/04
摘要： A conductor base coupled to a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor. The present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.
摘要翻译：连接到空气断路器的手指模块的导体基座。由于导体基座的连接器具有形成在其端部的一侧并与手指模块的接触器齿配合的弯曲表面，因此指形模块的接触器具有与连接器的弯曲表面相对应的另一曲面并且接触器通过板簧在垂直方向上被弹性支撑，以允许接触器的两个端部相对于接触器的纵向中心进行垂直弹性运动。本发明可以防止由于导体基座的连接器与指状模块的接触器之间的机械冲击而导致的损坏，这可能在断路器端子插入指状模块中时发生，从而延长导体基座的寿命，手指模块。

3. 发明授权

US07833579B2 Method for in-situ polycrystalline thin film growth 有权
标题翻译：原位多晶薄膜生长方法
公开(公告)号：US07833579B2
公开(公告)日：2010-11-16
申请号：US11433176
申请日：2006-05-12
申请人： Han Ki Kim , Myoung Soo Kim , Myung Soo Huh , Seok Heon Jeong , Hee Cheol Kang
发明人： Han Ki Kim , Myoung Soo Kim , Myung Soo Huh , Seok Heon Jeong , Hee Cheol Kang
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/44
摘要： A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.
摘要翻译：提供了一种原位多晶薄膜生长的方法。使用催化剂增强化学气相沉积（CECVD）装置来生长多晶硅薄膜。不需要随后的退火或脱氢过程。该方法包括排空室以形成真空室，然后净化真空室并引入催化剂。然后将基板放置在真空室中，并将反应气体注入室中。反应气体与室中的催化剂反应，以在衬底上生长多晶薄膜。本发明的方法减少了处理时间和生产成本，并且由于消除了大型退火设备而可用于制造更大的装置。

4. 发明申请

US20100105255A1 CONDUCTOR BASE AND FINGER MODULE OF AIR CIRCUIT BREAKER 有权
标题翻译：空气断路器的导体基座和手指模块
公开(公告)号：US20100105255A1
公开(公告)日：2010-04-29
申请号：US12651954
申请日：2010-01-04
申请人： Gae Goo Lyu , Ki Cheol Na , Myoung Soo Kim , Hyun Jae Kim
发明人： Gae Goo Lyu , Ki Cheol Na , Myoung Soo Kim , Hyun Jae Kim
IPC分类号： H01R4/48
CPC分类号： H01H1/42 , H01H1/5833 , H01H71/082 , H02B11/04
摘要： A conductor base coupled to a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor. The present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.
摘要翻译：连接到空气断路器的手指模块的导体基座。由于导体基座的连接器具有形成在其端部的一侧并与手指模块的接触器齿配合的弯曲表面，因此指形模块的接触器具有与连接器的弯曲表面相对应的另一曲面并且接触器通过板簧在垂直方向上被弹性支撑，以允许接触器的两个端部相对于接触器的纵向中心进行垂直弹性运动。本发明可以防止由于导体基座的连接器与指状模块的接触器之间的机械冲击而导致的损坏，这可能在断路器端子插入指状模块中时发生，从而延长导体基座的寿命，手指模块。

5. 发明授权

US07582837B2 Withdraw-in and withdraw-out apparatus for air circuit breaker 有权
标题翻译：空气断路器的抽出和取出装置
公开(公告)号：US07582837B2
公开(公告)日：2009-09-01
申请号：US11873049
申请日：2007-10-16
申请人： Gae Goo Lyu , Kl Cheol Na , Myoung Soo Kim , Hyun Jae Kim , Jae Kwan Seo
发明人： Gae Goo Lyu , Kl Cheol Na , Myoung Soo Kim , Hyun Jae Kim , Jae Kwan Seo
IPC分类号： H01H9/20
CPC分类号： H02B11/127 , H02B11/10
摘要： An air circuit breaker is provided wherein a rotational force is accurately discontinued at a movement completion time of assuming a connected position, a test position or a disconnected position by a breaker body in the process of withdrawing in and withdrawing out the breaker body from a cradle whereas a driving connection is performed if necessary, the breaker including a coupling device capable of being moved to a position where a withdraw-in and withdraw-out driving force generated by a manipulating handle is transmitted to a withdraw in and withdraw out apparatus and to a position where the withdraw-in and withdraw-out driving force is stopped of transmission.
摘要翻译：提供了一种空气断路器，其中在通过断路器主体在从支架中取出和取出断路器本体的过程中，在假定连接位置，测试位置或断开位置的移动完成时间处精确地停止旋转力而如果需要，则执行驱动连接，该断路器包括能够被移动到由操纵手柄产生的提取和撤出驱动力的位置被传递到撤回和退出装置的联接装置，并且退出驱动力停止传输的位置。

6. 发明申请

US20090111283A1 METHOD FOR FORMING INTERLAYER INSULATING FILM OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于形成半导体器件的层间绝缘膜的方法
公开(公告)号：US20090111283A1
公开(公告)日：2009-04-30
申请号：US12041402
申请日：2008-03-03
申请人： Myoung Soo Kim , Kew Chan Shim
发明人： Myoung Soo Kim , Kew Chan Shim
IPC分类号： H01L21/469
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/31058 , H01L21/316 , H01L21/76837
摘要： A method for forming an interlayer insulating film of a semiconductor device comprises forming an active pattern over a substrate, forming a spin-on dielectric film over the substrate including the active pattern, and irradiating an electron beam over the spin on dielectric film to form an interlayer insulating film.
摘要翻译：一种用于形成半导体器件的层间绝缘膜的方法，包括在衬底上形成有源图案，在包括有源图案的衬底上形成旋涂电介质膜，并在电介质膜上的自旋上照射电子束，形成层间绝缘膜。

7. 发明申请

US20080113551A1 CONDUCTOR BASE AND FINGER MODULE OF AIR CIRCUIT BREAKER 审中-公开
标题翻译：空气断路器的导体基座和手指模块
公开(公告)号：US20080113551A1
公开(公告)日：2008-05-15
申请号：US11872959
申请日：2007-10-16
申请人： Gae Goo Lyu , Ki Cheol Na , Myoung Soo Kim , Hyun Jae Kim
发明人： Gae Goo Lyu , Ki Cheol Na , Myoung Soo Kim , Hyun Jae Kim
IPC分类号： H01R13/73
CPC分类号： H01H1/5833 , H01H1/42 , H02B11/04
摘要： Disclosed therein are a conductor base and a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor, the present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.
摘要翻译：其中公开了一种空气断路器的导体基座和指状模块。由于导体基座的连接器具有形成在其端部的一侧并与手指模块的接触器齿配合的弯曲表面，因此指形模块的接触器具有与连接器的弯曲表面相对应的另一曲面并且接触器通过板簧在垂直方向上被弹性支撑，以允许接触器的两个端部相对于接触器的纵向中心进行垂直弹性运动，本发明可以防止由于接触器之间的机械冲击而造成的损坏导体基座的连接器和手指模块的接触器，其可以在断路器端子插入手指模块中时发生，从而延长导体基座和手指模块的寿命。

8. 发明授权

US07217985B2 Semiconductor device including a transistor having low threshold voltage and high breakdown voltage 有权
标题翻译：半导体器件包括具有低阈值电压和高击穿电压的晶体管
公开(公告)号：US07217985B2
公开(公告)日：2007-05-15
申请号：US11066492
申请日：2005-02-28
申请人： Myoung-soo Kim
发明人： Myoung-soo Kim
IPC分类号： H01L29/00
CPC分类号： H01L21/823418 , H01L21/823462 , H01L27/088
摘要： A semiconductor device, including a transistor having low threshold voltage and high breakdown voltage, includes a first gate electrode, a second gate electrode, and a third gate electrode arranged on a predetermined first, second, and third region of a semiconductor substrate, respectively, a first gate insulating layer, a second gate insulating layer, and a third gate insulating layer, which are interposed between the first, second and third gate electrode and the semiconductor substrate, respectively, and first, second, and third junction regions arranged in the first, second, and third region of the semiconductor substrate, respectively, on both sides of the first, second and third gate electrode, respectively, wherein a thickness of the first gate insulating layer is greater than a thickness of either of the second or third gate insulating layers, and wherein a structure of the first junction region and a structure of the third junction region are the same.
摘要翻译：包括具有低阈值电压和高击穿电压的晶体管的半导体器件分别包括布置在半导体衬底的预定第一，第二和第三区域上的第一栅电极，第二栅电极和第三栅电极，第一栅极绝缘层，第二栅极绝缘层和第三栅极绝缘层，分别介于第一，第二和第三栅电极与半导体衬底之间，第一，第二和第三结区域布置在分别在第一，第二和第三栅极的两侧分别具有半导体衬底的第一，第二和第三区域，其中第一栅极绝缘层的厚度大于第二栅极绝缘层的厚度栅极绝缘层，并且其中第一结区域的结构和第三结区域的结构相同。

9. 发明申请

US20060278951A1 Metal oxide semiconductor (MOS) field effect transistor having trench isolation region and method of fabricating the same 审中-公开
公开(公告)号：US20060278951A1
公开(公告)日：2006-12-14
申请号：US11416736
申请日：2006-05-03
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L29/78
摘要： A leakage current occurring on a boundary of a trench isolation region and an active region can be prevented in a Metal Oxide Semiconductor (MOS) Field Effect transistor, and a fabricating method thereof is provided. The transistor includes the trench isolation region disposed in a predetermined portion of a semiconductor substrate to define the active region. A source region and a drain region are spaced apart from each other within the active region with a channel region disposed between the source region and the drain region. A gate electrode crosses over the channel region between the source region and the drain region, and a gate insulating layer is disposed between the gate electrode and the channel region. An edge insulating layer thicker than the gate insulating layer is disposed on a lower surface of the gate electrode around the boundary of the trench isolation region and the active region.

10. 发明申请

US20060228827A1 Method of fabricating organic light emitting device 有权
公开(公告)号：US20060228827A1
公开(公告)日：2006-10-12
申请号：US11400474
申请日：2006-04-06
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/5096 , H01L51/5253
摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

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