专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US06866746B2 Clamshell and small volume chamber with fixed substrate support 有权
标题翻译：蛤壳式和小容积室具有固定衬底支撑
公开(公告)号：US06866746B2
公开(公告)日：2005-03-15
申请号：US10302774
申请日：2002-11-21
申请人： Lawrence C. Lei , Alfred W. Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Benjamin Glenn
发明人： Lawrence C. Lei , Alfred W. Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Benjamin Glenn
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45521 , C23C16/45574 , H01L21/6719
摘要： Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.
摘要翻译：本发明的实施例一般涉及具有固定衬底支撑件的蛤壳式和小容积室。处理室的一个实施例包括具有基板接收表面的固定基板支撑件，围绕基板接收表面的周边设置的泵送环和设置在固定基板支撑件上方的气体分配组件。泵送环形成泵送通道的至少一部分并且具有通过其形成的一个或多个孔。腔室还可以包括设置在泵送环的孔的径向内侧的气流扩散器。处理室的另一实施例包括包括固定衬底支撑件的第一组件和包括气体分配组件的第二组件。第一组件包括第一组件主体，其形状和尺寸使得第一组件主体的至少一部分在衬底支撑件的衬底接收表面下方。铰链组件联接第一组件和第二组件。第一组件和第二组件可以选择性地定位在打开位置和关闭位置之间。

32. 发明授权

US08626330B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08626330B2
公开(公告)日：2014-01-07
申请号：US13235855
申请日：2011-09-19
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

33. 发明授权

US07879151B2 Mask etch processing apparatus 有权
标题翻译：掩模蚀刻处理装置
公开(公告)号：US07879151B2
公开(公告)日：2011-02-01
申请号：US11530676
申请日：2006-09-11
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
IPC分类号： C23C16/00 , C23C16/458 , H01L21/306
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。

34. 发明授权

US07860597B2 Atomic layer deposition apparatus 有权
公开(公告)号：US07860597B2
公开(公告)日：2010-12-28
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

35. 发明授权

US07674715B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07674715B2
公开(公告)日：2010-03-09
申请号：US12335983
申请日：2008-12-16
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

36. 发明授权

US07465665B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07465665B2
公开(公告)日：2008-12-16
申请号：US11749016
申请日：2007-05-15
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

37. 发明申请

US20080227291A1 FORMATION OF COMPOSITE TUNGSTEN FILMS 有权
标题翻译：形成复合陶瓷薄膜
公开(公告)号：US20080227291A1
公开(公告)日：2008-09-18
申请号：US12128499
申请日：2008-05-28
申请人： KEN K. LAI , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： KEN K. LAI , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
摘要翻译：本发明的实施例提供了沉积钨材料的方法。在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。在一些实例中，钨成核层的厚度小于约，例如约15。在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。

38. 发明授权

US07211144B2 Pulsed nucleation deposition of tungsten layers 有权
标题翻译：钨层的脉冲成核沉积
公开(公告)号：US07211144B2
公开(公告)日：2007-05-01
申请号：US10194629
申请日：2002-07-12
申请人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
发明人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
IPC分类号： C30B25/16
CPC分类号： H01L21/28562 , C23C16/14 , C23C16/45523 , C23C16/45525 , C30B25/02 , C30B29/02
摘要： A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.
摘要翻译：使用顺序沉积工艺形成钨成核层的方法。钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。此后，从处理室除去从钨沉积产生的反应副产物。在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。这种沉积工艺形成具有良好阶梯覆盖的钨成核层。可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为形成。

39. 发明授权

US07101795B1 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 有权
$Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer$
标题翻译：使用顺序沉积技术沉积难熔金属层以形成成核层的方法和装置
公开(公告)号：US07101795B1
公开(公告)日：2006-09-05
申请号：US09678266
申请日：2000-10-03
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.
摘要翻译：在衬底上形成难熔金属层的方法和系统特征是使用顺序沉积技术成核基底，其中衬底连续地暴露于第一和第二反应气体，然后使用气相沉积形成层，以使成核层包含在第一和第二反应气体之一中的化合物的大量沉积。

40. 发明授权

US06849545B2 System and method to form a composite film stack utilizing sequential deposition techniques 有权
标题翻译：使用顺序沉积技术形成复合膜堆的系统和方法
公开(公告)号：US06849545B2
公开(公告)日：2005-02-01
申请号：US09885609
申请日：2001-06-20
申请人： Alfred W. Mak , Mei Chang , Jeong Soo Byun , Hua Chung , Ashok Sinha , Moris Kori
发明人： Alfred W. Mak , Mei Chang , Jeong Soo Byun , Hua Chung , Ashok Sinha , Moris Kori
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/28562
摘要： A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.
摘要翻译：一种在基板上形成用于铜触点的层叠阻挡层的系统和方法。衬底连续地暴露于第一和第二反应气体以形成粘附层。然后，粘附层连续地暴露于第三和第四反应气体，形成与粘合层相邻的阻挡层。随后在阻挡层附近沉积铜层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式