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21. 发明申请

US20140174339A1 METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：制造硅单晶的方法
公开(公告)号：US20140174339A1
公开(公告)日：2014-06-26
申请号：US14236977
申请日：2012-08-02
申请人： Akihiro Kimura , Kiyotaka Takano , Junya Tokue
发明人： Akihiro Kimura , Kiyotaka Takano , Junya Tokue
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/00 , C30B15/10 , C30B29/06
摘要： There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.
摘要翻译：提供一种制造单晶硅的方法，该方法包括：将容纳在坩埚中的多晶硅熔化以获得硅熔体的原料熔化步骤; 并使晶种与硅熔体接触并拉出晶种以生长硅单晶，其中在原料熔化步骤之后和拉制步骤之前，进行：将硅熔体离开的方圆化步骤以规定的气体流量和规定的炉压进行坩埚的预定转数，以施加磁场而产生方英石; 以及通过进行坩埚转数增加，气体流量增加和炉压力下降中的任何一个部分溶解方英石的溶解步骤，超过了对立图中的曲线图。

22. 发明申请

US20140102357A1 Method and Apparatus for Reducing Impurities in a Single Crystal Based on Ingot Length 有权
标题翻译：基于锭长度降低单晶杂质的方法和装置
公开(公告)号：US20140102357A1
公开(公告)日：2014-04-17
申请号：US13650194
申请日：2012-10-12
申请人： SIEMENS MEDICAL SOLUTIONS USA, INC.
发明人： Keith Ritter
IPC分类号： C30B15/22 , C30B15/30
CPC分类号： C30B29/12 , C30B15/14 , C30B15/20 , C30B35/00 , Y10T117/1004 , Y10T117/1072
摘要： A method for growing a single crystal in a chamber. The method includes heating raw material to form a melt for forming the single crystal. A crystal seed is then inserted into the melt and pulled from the melt to form a partial ingot, wherein the partial ingot radiates heat. An amount of gas is then introduced into the chamber which corresponds to a size of the partial ingot so as to provide a constant crystallization rate.
摘要翻译：在室中生长单晶的方法。该方法包括加热原料以形成用于形成单晶的熔体。然后将晶种插入熔体中并从熔体中拉出以形成部分晶锭，其中部分晶锭辐射热量。然后将一定量的气体引入室中，其对应于部分锭的尺寸，以提供恒定的结晶速率。

23. 发明授权

US08685162B2 Removing a sheet from the surface of a melt using gas jets 有权
标题翻译：使用气体喷射从熔体表面去除片材
公开(公告)号：US08685162B2
公开(公告)日：2014-04-01
申请号：US13037789
申请日：2011-03-01
申请人： Peter L. Kellerman , Gregory D. Thronson , Dawei Sun
发明人： Peter L. Kellerman , Gregory D. Thronson , Dawei Sun
IPC分类号： C30B15/22 , C30B9/00 , C30B15/00 , C30B15/06 , C30B15/24 , C30B15/34
CPC分类号： C30B35/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B15/002 , C30B15/06 , C30B15/22 , C30B15/24 , C30B15/34 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , Y10T117/1048 , Y10T117/1092
摘要： In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
摘要翻译：在一个实施例中，片材生产设备包括构造成容纳材料的熔体的容器。冷却板靠近熔体设置并且被配置成在熔体上形成材料片。第一气体喷射器构造成将气体引向容器的边缘。一片材料在熔体的表面上水平地平移，并且片材从熔体中移除。第一气体射流可以指向弯月面并且可以稳定该弯液面或增加弯液面内的局部压力。

24. 发明授权

US08172943B2 Single Crystal manufacturing method 有权
标题翻译：单晶制造方法
公开(公告)号：US08172943B2
公开(公告)日：2012-05-08
申请号：US12129719
申请日：2008-05-30
申请人： Masamichi Ohkubo
发明人： Masamichi Ohkubo
IPC分类号： C30B15/22
CPC分类号： C30B15/305 , C30B29/06
摘要： Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and controlling the crystal driving unit and a crucible driving unit under predetermined conditions so as to pull the seed crystal. During pulling, a horizontal magnetic field positioning device applies a magnetic field in the horizontal direction to the inside of the silicon melt, fixing the magnetic field axis at a constant position from the liquid surface of the melt. Positional adjustment of the vertical position of the horizontal magnetic field is performed in advance by a magnetic field position adjusting device, and the magnetic field axis of the applied field is fixed at a constant distance lower than the liquid surface of the melt by more than 50 mm and at the same level or higher than a depth L from the melt surface at the point of tail-in.
摘要翻译：通过驱动晶体驱动单元以将晶种浸入硅熔体中，可以稳定地将单晶锭无位错地且具有良好的晶体形状，并且在预定条件下控制晶体驱动单元和坩埚驱动单元，以便拉晶晶。在拉动期间，水平磁场定位装置在水平方向上向硅熔体的内部施加磁场，将磁场轴线固定在距离熔体的液面的恒定位置。水平磁场的垂直位置的位置调整由磁场位置调整装置预先进行，施加场的磁场轴固定在比熔体的液面低一定的距离以上50以上 mm，并且处于与尾部处的熔体表面相同的高度或高于深度L.

25. 发明授权

US08043427B2 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US08043427B2
公开(公告)日：2011-10-25
申请号：US12011713
申请日：2008-01-29
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

26. 发明申请

US20110056427A1 SINGLE-CRYSTAL MANUFACTURING APPARATUS AND SINGLE-CRYSTAL MANUFACTURING METHOD 有权
标题翻译：单晶制造装置和单晶制造方法
公开(公告)号：US20110056427A1
公开(公告)日：2011-03-10
申请号：US12991714
申请日：2009-05-18
申请人： Satoshi Soeta , Toshifumi Fujii
发明人： Satoshi Soeta , Toshifumi Fujii
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.
摘要翻译：一种单晶体制造装置，至少包括：构造成容纳坩埚的主室; 连续地设置在主室上方的拉动室，其中拉出和容纳生长的单晶的拉动室; 设置在所述拉动室中的气体入口; 从主室的天花板向下延伸的气体导向缸; 并且从所述气体导流筒的下端部向上延伸的绝热环，所述绝热环的直径增大，以便包围所述气体导流筒的外部，其中，至少一个窗口为设置在距气体导向筒的下端50〜200mm的范围内，窗口的开口面积为距下端50〜200mm区域的面积的50％以上的气体导向筒。

27. 发明申请

US20090311160A1 Silicon single crystal and method of producing the same 审中-公开
标题翻译：硅单晶及其制造方法
公开(公告)号：US20090311160A1
公开(公告)日：2009-12-17
申请号：US12457421
申请日：2009-06-10
申请人： Yasuhiro Saito , Nobumitsu Takase
发明人： Yasuhiro Saito , Nobumitsu Takase
IPC分类号： C01B33/02 , C30B15/22
CPC分类号： C30B15/22 , C01B33/02 , C30B29/06
摘要： The present invention provides a silicon single crystal comprising a seed crystal, a narrowed portion whose diameter decreases, and at its lower end, a neck portion, wherein in a front projection view, the contour of the narrowed portion is located inside the straight line connecting the contour of the lower end of the seed crystal to the contour of the upper end of the neck portion, and the contour of the neck portion is made to be a tangent at the lower end of the narrowed portion. At this time, the length L of the narrowed portion in a pulling direction and the difference d between the radius of the seed crystal and the radius of the narrowed portion relative to the diameter W of the seed crystal is appropriately adjusted and further the contour of the narrowed portion is desirably formed with any one of parabolas, circular arcs and elliptic arcs. Configuring the contour of the narrowed portion in this manner makes it possible to remove dislocations from the neck portion with a high success rate, shorten a pulling time of the silicon single crystal and improve the dislocation free ratio.
摘要翻译：本发明提供一种硅单晶，其包括晶种，其直径减小的变窄部分，其下端为颈部，其中，在前投影视图中，所述变窄部分的轮廓位于所述直线连接晶种的下端的轮廓与颈部的上端的轮廓相同，颈部的轮廓在狭窄部分的下端形成切线。此时，适当地调整拉伸方向上的变窄部分的长度L和晶种的半径与变窄部分的半径之间的差d相对于晶种的直径W，并且进一步调整狭窄部分理想地由抛物面，圆弧和椭圆弧中的任何一个形成。以这种方式配置变窄部分的轮廓使得可以以高成功率去除颈部的位错，缩短硅单晶的拉伸时间并提高无位错比。

28. 发明申请

US20090293804A1 Method of shoulder formation in growing silicon single crystals 审中-公开
标题翻译：生长硅单晶中肩峰形成的方法
公开(公告)号：US20090293804A1
公开(公告)日：2009-12-03
申请号：US12457067
申请日：2009-06-01
申请人： Hiroaki Taguchi , Hideki Hara , Ryoichi Kaito
发明人： Hiroaki Taguchi , Hideki Hara , Ryoichi Kaito
IPC分类号： C30B15/22
CPC分类号： C30B15/305 , C30B15/22 , C30B29/06 , C30B30/04
摘要： A method of shoulder formation in growing silicon single crystals by the CZ method which comprises causing the taper angle to vary in at least two stages, desirably three stages or four stages, can inhibit the occurrence of dislocations in the shoulder formation step and thereby improve the yield and increase the productivity. As the number of stages resulting from varying the taper angle is increased, possible disturbances to occur at crystal growth interfaces and incur dislocations can be reduced and, further, when the above shoulder formation method is applied under application of a transverse magnetic field having a predetermined intensity, the occurrence of dislocations can be inhibited and defect-free silicon single crystals suited for the manufacture of wafers can be grown with high production efficiency. Therefore, the method is best suited for the production of large-diameter silicon single crystals with a diameter of 450 mm which are to be applied to manufacturing semiconductor devices.
摘要翻译：包括使锥角在至少两个阶段，优选三个阶段或四个阶段中变化的CZ方法生长的单晶硅中的肩部形成方法可以抑制肩部形成步骤中位错的发生，从而改善产量并提高生产率。随着锥角变化的阶段数量的增加，在晶体生长界面发生可能的干扰并引起位错，此外，当应用上述肩部形成方法时，施加具有预定的强度，可以抑制位错的发生，并且可以以高生产效率生长适合制造晶片的无缺陷硅单晶。因此，该方法最适用于生产直径为450mm的大直径硅单晶，其应用于制造半导体器件。

29. 发明授权

US6165263A Method for growing single crystal 失效
标题翻译：生长单晶的方法
公开(公告)号：US6165263A
公开(公告)日：2000-12-26
申请号：US263586
申请日：1999-03-05
申请人： Takenori Sekijima , Takashi Fujii , Kikuo Wakino , Masakatsu Okada
发明人： Takenori Sekijima , Takashi Fujii , Kikuo Wakino , Masakatsu Okada
IPC分类号： H01F41/14 , C30B13/00 , C30B13/24 , C30B13/28 , C30B29/28 , C30B15/22
CPC分类号： C30B13/28 , C30B13/00 , C30B13/24 , C30B29/28
摘要： A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth of the single crystal is lower than about 10% by volume.
摘要翻译：通过使晶种接触通过熔融多晶材料形成的熔融区域，然后将熔融区域移离种子，生长单晶的方法，其中单晶生长期间大气中的氧浓度较低比10体积％。

30. 发明授权

US5954873A Manufacturing method for a silicon single crystal wafer 失效
标题翻译：硅单晶晶片的制造方法
公开(公告)号：US5954873A
公开(公告)日：1999-09-21
申请号：US990187
申请日：1997-12-12
申请人： Masataka Hourai , Eiji Kajita
发明人： Masataka Hourai , Eiji Kajita
IPC分类号： C30B15/22 , C30B15/00 , C30B15/20 , C30B29/06 , H01L21/322
CPC分类号： C30B29/06 , C30B15/203
摘要： A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.
摘要翻译：提供了制造无单晶硅缺陷的硅单晶晶片的方法。这些晶片由Czochralski法制造的硅单晶形成。拉伸速度V（mm / min）和温度梯度G（℃/ mm）的仔细控制允许形成不含OSF环的晶体和其他类型的缺陷。

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