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21. 发明授权

US08888911B2 Method of producing single crystal silicon 有权
标题翻译：单晶硅的制造方法
公开(公告)号：US08888911B2
公开(公告)日：2014-11-18
申请号：US12875607
申请日：2010-09-03
申请人： Masayuki Uto , Tuneaki Tomonaga , Toshimichi Kubota , Fukuo Ogawa , Yasuhito Narushima
发明人： Masayuki Uto , Tuneaki Tomonaga , Toshimichi Kubota , Fukuo Ogawa , Yasuhito Narushima
IPC分类号： C30B15/22 , C30B29/06 , C30B15/20 , C30B15/04 , C30B15/00 , C30B15/30
CPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/20 , C30B15/22 , C30B15/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
摘要翻译：本发明提供一种能够通过在晶体生长期间防止细胞生长而生产具有较低电阻率的单晶硅的技术，特别是在向熔融硅原料中添加相对大量的掺杂剂的情况下。具体地说，本发明提供了一种通过切克劳斯基法生产单晶硅的方法，包括当单晶硅被拉起时通过控制固 - 液界面的高度来制造具有较低电阻率的单晶硅。

22. 发明授权

US08673075B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08673075B2
公开(公告)日：2014-03-18
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

23. 发明授权

US08652254B2 Method for pulling silicon single crystal 有权
标题翻译：拉硅单晶的方法
公开(公告)号：US08652254B2
公开(公告)日：2014-02-18
申请号：US12450961
申请日：2008-04-14
申请人： Satoshi Soeta , Masahiro Mori
发明人： Satoshi Soeta , Masahiro Mori
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/22
摘要： The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer.
摘要翻译：本发明是一种拉硅单晶的方法，该硅单晶是通过使晶种与熔体接触并通过拉起来生长硅单晶的切克劳斯基法，包括以下步骤：使晶种与熔体接触; 在晶种下形成颈缩部分; 并且通过增加直径在颈缩部分下形成硅单晶，其中在形成颈缩部分期间的拉伸速率为2mm / min以下，并且具有增加的直径的硅单晶是具有硼掺杂的硅单晶，其具有肩部的电阻率为1.5mΩ·cm以下。因此，在通过CZ法制造的具有低电阻率的硼掺杂硅单晶锭加工成晶片的情况下，可以提供拉丝硅单晶的方法，而不会在晶片表面产生诸如划痕之类的缺陷。

24. 发明申请

US20130291788A1 METHOD FOR THE PREPARATION OF DOPED GARNET STRUCTURE SINGLE CRYSTALS WITH DIAMETERS OF UP TO 500 MM 有权
标题翻译：用于制备直径为500MM的直径结构的单晶的方法
公开(公告)号：US20130291788A1
公开(公告)日：2013-11-07
申请号：US13979751
申请日：2012-01-10
申请人： Jundrich Houzvicka , Karel Bartos
发明人： Jundrich Houzvicka , Karel Bartos
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/00 , C30B29/28
摘要： Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60° from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.
摘要翻译：掺杂有稀土氧化物和过渡元素的镥和铝酸钇单晶的制备在于制备氧化物混合物烧结物，其熔化并且匀化至少1小时。晶体的晶体生长速率和加宽度与晶体轴线至少60°的角度保持均匀，直到坩埚直径的至少80％的直径为至少100mm。该过程的完成通过将晶体从熔体中分离出来，同时晶体继续位于其中生长的区域内的坩埚内部，并且其中也发生晶体的最终回火。

25. 发明申请

US20120186512A1 PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT 有权
标题翻译：在晶体生长前沿测定热梯度的程序
公开(公告)号：US20120186512A1
公开(公告)日：2012-07-26
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22 , C30B15/30
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

26. 发明申请

US20120141808A1 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR 审中-公开
标题翻译：二维线缺陷控制硅芯，波形和外延波形及其制造工艺及其设备
公开(公告)号：US20120141808A1
公开(公告)日：2012-06-07
申请号：US13328158
申请日：2011-12-16
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C01B33/02 , B32B9/04 , B28D5/00 , C30B15/22
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
摘要翻译：本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。新的缺陷是当由施加强水平磁场的HMCZ（Horizontal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的水平磁场，防止螺丝错位传播到十字滑移。

27. 发明申请

US20110175202A1 Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm 有权
标题翻译：用于制造直径最小为450mm的由半导体芯片制成的半导体晶片的方法以及由直径为450mm的硅组成的半导体晶片
公开(公告)号：US20110175202A1
公开(公告)日：2011-07-21
申请号：US13005584
申请日：2011-01-13
申请人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
发明人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
IPC分类号： H01L29/36 , C30B15/22
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06 , Y10T428/21
摘要： Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.
摘要翻译：硅半导体晶片通过以下步骤制造：将具有锥形截面的单晶和与坩埚中的熔体直径≥450mm和长度≥800mm的相邻的圆柱形部分拉制，其中，从锥形截面向圆柱形部分的拉伸速度比拉伸圆筒部分的平均拉拔速度高至少1.8倍; 以至少20kW的冷却功率冷却生长中的单晶; 从坩埚的侧壁向单晶供给热量，其中在围绕单晶的隔热罩和熔体表面之间存在高度为≥70mm的间隙。

28. 发明申请

US20110126757A1 Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant 有权
标题翻译：用于将具有保持恒定直径的部分的由硅组成的单晶拉出的方法
公开(公告)号：US20110126757A1
公开(公告)日：2011-06-02
申请号：US12913964
申请日：2010-10-28
申请人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
发明人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
IPC分类号： C30B15/22 , C30B15/14
CPC分类号： C30B29/06 , C30B15/22 , C30B15/305 , C30B30/04
摘要： Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate vp having the units [mm/min]; and the diameter of the single crystal in the section having a diameter that remains constant is regulated to the predefined diameter by regulating the heating power of a first heating source which supplies heat to the single crystal and to a region of the melt that adjoins the single crystal and is arranged above the melt, such that diameter fluctuations are corrected with a period duration T that is not longer than (2·18 mm)/vp.
摘要翻译：由具有保持恒定直径的部分的硅构成的单晶通过其中以具有单位[mm / min]的预定拉伸速率vp拉动单晶的方法被拉伸; 并且具有保持恒定直径的截面中的单晶的直径通过调节向单晶提供热量的第一加热源和与单晶相邻的熔体区域的加热功率而调节到预定直径并且布置在熔体上方，使得直径波动以不长于（2.18mm）/ vp的周期T来校正。

29. 发明申请

US20100316551A1 Method For Pulling A Silicon Single Crystal 有权
标题翻译：拉硅单晶的方法
公开(公告)号：US20100316551A1
公开(公告)日：2010-12-16
申请号：US12724590
申请日：2010-03-16
申请人： Markus Baer
发明人： Markus Baer
IPC分类号： C01B33/02 , C30B15/22
CPC分类号： C30B29/06 , C30B15/22 , Y02P80/30
摘要： The invention relates to a method for pulling a silicon single crystal from a melt which is contained in a crucible, comprising immersion of a seed crystal into the melt; crystallization of the single crystal on the seed crystal by raising the seed crystal from the melt with a crystal pull speed; widening the diameter of the single crystal to a setpoint diameter in a conical section, comprising control of the crystal pull speed in such a way as to induce a curvature inversion of a growth front of the single crystal in the conical section.
摘要翻译：本发明涉及从包含在坩埚中的熔体中提取硅单晶的方法，包括将晶种浸入熔体中; 通过以晶体拉速从熔体中提取晶种，晶种上结晶单晶; 将单晶的直径扩大到锥形部分中的设定点直径，包括以使得在锥形部分中的单晶的生长前沿的曲率反转的方式控制晶体拉速。

30. 发明申请

US20090293802A1 Method of growing silicon single crystals 审中-公开
标题翻译：生长硅单晶的方法
公开(公告)号：US20090293802A1
公开(公告)日：2009-12-03
申请号：US12457065
申请日：2009-06-01
申请人： Hiroaki Taguchi , Hideki Hara , Ryoichi Kaito
发明人： Hiroaki Taguchi , Hideki Hara , Ryoichi Kaito
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/22 , C30B15/305 , C30B30/04
摘要： By giving a shoulder portion height of at least 100 mm in growing silicon single crystals having a diameter of 450 mm (weighing up to 1100 kg) by the CZ method, it becomes possible to inhibit the occurrence of dislocations in the shoulder formation step to thereby achieve a yield improvement and increase productivity. Furthermore, when this method is applied under application of a transverse magnetic field with a predetermined intensity, the occurrence of dislocations can be further inhibited and, accordingly, defect-free silicon single crystals suited for wafer manufacture can be grown with high production efficiency. Thus, the method is best suited for the production of large-diameter silicon single crystals having a diameter of 450 mm, which are applied in the manufacture of semiconductor devices.
摘要翻译：通过在CZ方法中生长出直径为450mm（重达1100kg）的单晶硅的肩部高度至少为100mm，可以抑制肩部形成步骤中的位错的发生，由此实现产量提高并提高生产率。此外，当施加具有预定强度的横向磁场的这种方法时，可以进一步抑制位错的发生，因此，可以以高生产效率生长适用于晶片制造的无缺陷硅单晶。因此，该方法最适用于生产直径为450mm的大直径硅单晶，其应用于半导体器件的制造中。

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